Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations
Authors:
Sridhar Sadasivam,
Ning Ye,
James Charles,
Kai Miao,
Joseph P. Feser,
Tillmann Kubis,
Timothy S. Fisher
Abstract:
In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is t…
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In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.
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Submitted 12 January, 2017; v1 submitted 10 September, 2016;
originally announced September 2016.
Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces
Authors:
Ning Ye,
Joseph P Feser,
Sridhar Sadasivam,
Timothy S. Fisher,
Tianshi Wang,
Chaoying Ni,
Anderson Janotti
Abstract:
Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most si…
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Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no difference in the thermal interface conductance of epitaxial and non-epitaxial silicide/silicon interfaces. The effect of substrate carrier concentration is also investigated over a wide range of p- and n-type doping, and is found to be independent of carrier concentration, regardless of whether the interface is epitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, a comparison of temperature dependant experimental data is made with two detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. At temperatures above 100K, the AGF approach greatly underpredicts the CoSi$_2$ data, while the DMM prediction matches the data well. The full-dispersion DMM is also found to closely predict the experimentally observed temperature-dependent interface conductance for epitaxial NiSi/Si and non-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Si interfaces, full dispersion DMM significantly overpredicts the experimental data.
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Submitted 26 January, 2017; v1 submitted 6 September, 2016;
originally announced September 2016.
