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Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy
Authors:
Guodong Ren,
Shantanu Singh,
Gwan Yeong Jung,
Wooseon Choi,
Huandong Chen,
Boyang Zhao,
Kevin Ye,
Andrew R. Lupini,
Miaofang Chi,
Jordan A. Hachtel,
Young-Min Kim,
Jayakanth Ravichandran,
Rohan Mishra
Abstract:
Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cl…
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Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cloud oriented along the c-axis, hence, resulting in the colossolal optical anisotropy. Here, further enhancement of the colossal optical anisotropy to 2.5 in Sr1.143TiS3 is reported through control over the periodicity of the atomic-scale modulations. The role of structural modulations in tuning the optical properties in a series of SrxTiS3 compounds has been investigated using DFT calculations. The structural modulations arise from various stacking sequences of face-sharing TiS6 octahedra and twist-distorted trigonal prisms, and are found to be thermodynamically stable for x larger than 1 but smaller than 1.5. As x increases, an indirect-to-direct band gap transition is predicted for x equal to and larger than 1.143 along with an increased occupancy of Ti-dz2 states. Together, these two factors result in a theoretically predicted maximum birefriengence of 2.5 for Sr1.143TiS3. Single crystals of Sr1.143TiS3 were grown using a molten-salt flux method. Atomic-scale observations using scanning transmission electron microscopy confirm the feasibility of synthesizing SrxTiS3 with varied modulation periodicities. Overall, these findings demonstrate compositonal tunability of optical properties in SrxTiS3 compounds, and potentially in other hexagonal perovskites having structural modulations.
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Submitted 14 May, 2025;
originally announced May 2025.
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Crossed pseudopotential$-$functional calculations made simple: An extended Kohn-Sham framework
Authors:
Kuiyu Ye,
Jiale Shen,
Haitao Liu,
Yuanchang Li
Abstract:
Modern density-functional-theory (DFT) calculations rely heavily on pseudopotentials, yet their impact on accuracy is barely addressed. In this work, we derive from the Kohn-Sham equation that the use of pseudopotentials invariably introduces a ``dropping" error, which leads to a deviation from the Hohenberg-Kohn theorem. Crossed pseudopotential-functional calculations provide a pragmatic way to b…
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Modern density-functional-theory (DFT) calculations rely heavily on pseudopotentials, yet their impact on accuracy is barely addressed. In this work, we derive from the Kohn-Sham equation that the use of pseudopotentials invariably introduces a ``dropping" error, which leads to a deviation from the Hohenberg-Kohn theorem. Crossed pseudopotential-functional calculations provide a pragmatic way to balance accuracy and efficiency, enabling the right results for the right reasons. This paradigm goes beyond the (generalized) Kohn-Sham framework, which we name the extended Kohn-Sham framework. We support our assertion with a bandgap study on 54 monovalent-Cu semiconductors. The crossed calculations, compared to consistent ones, not only remove all 11 erroneous metal predictions, but also drastically reduce the mean relative error from 80\% to 20\%. The accuracy even exceeds that of the hybrid functionals and GW due to the role of pseudopotentials in modelling the external potentials of Cu-valence electrons that cannot be compensated by exchange-correlation.
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Submitted 12 May, 2025;
originally announced May 2025.
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VacHopPy: A Python package for vacancy hopping analysis based on ab initio molecular dynamics simulations
Authors:
Taeyoung Jeong,
Kun Hee Ye,
Seungjae Yoon,
Dohyun Kim,
Yunjae Kim,
Jung-Hae Choi
Abstract:
Multiscale modeling, which integrates material properties from ab initio calculations into device-scale models, is a promising approach for optimizing semiconductor devices. However, a key challenge remains: while ab initio methods yield diffusion parameters specific to individual migration paths, device models require a single set of effective parameters that capture overall diffusion. To bridge…
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Multiscale modeling, which integrates material properties from ab initio calculations into device-scale models, is a promising approach for optimizing semiconductor devices. However, a key challenge remains: while ab initio methods yield diffusion parameters specific to individual migration paths, device models require a single set of effective parameters that capture overall diffusion. To bridge this gap, we present VacHopPy an open-source Python package for vacancy hopping analysis based on ab initio molecular dynamics (AIMD). VacHopPy extracts an effective set of parameters for vacancy hopping: hopping distance, hopping barrier, number of effective paths, correlation factor, and jump attempt frequency, by statistically integrating thermodynamic, kinetic, and geometric contributions across all hopping paths. It also offers tools for tracking vacancy trajectories and for detecting phase transitions in AIMD simulations. The applicability of VacHopPy is demonstrated in three materials: face-centered cubic Al, rutile TiO2, and monoclinic HfO2. The effective parameters accurately reflect temperature-dependent diffusion behavior and show good agreement with previous experimental observations. Expressed in a simplified form suitable for device models, these parameters remain valid across a broad temperature range spanning several hundred Kelvins. Furthermore, our findings highlight the critical role of anisotropic thermal vibrations in overall diffusion, a factor frequently overlooked in other frameworks but inherently considered in VacHopPy. Overall, VacHopPy provides a robust framework for bridging atomistic and device-scale models, enabling more reliable multiscale simulations.
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Submitted 30 March, 2025;
originally announced March 2025.
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Pressure induced superconducting dome in LaNiGa2
Authors:
Yanan Zhang,
Dajun Su,
Zhaoyang Shan,
Yunshu Shi,
Rui Li,
Jinyu Wu,
Zihan Yang,
Kaixin Ye,
Fei Zhang,
Yanchun Li,
Xiaodong Li,
Chao Cao,
Valentin Taufour,
Lin Jiao,
Michael Smidman,
Huiqiu Yuan
Abstract:
LaNiGa2 is a time-reversal symmetry breaking superconductor with symmetry protected band crossings, making it an ideal platform for investigating the interplay between unconventional superconductivity and electronic structure topology. Here we present a transport study of LaNiGa2 under pressure. The application of pressure to LaNiGa2 induces a significant enhancement of the superconducting transit…
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LaNiGa2 is a time-reversal symmetry breaking superconductor with symmetry protected band crossings, making it an ideal platform for investigating the interplay between unconventional superconductivity and electronic structure topology. Here we present a transport study of LaNiGa2 under pressure. The application of pressure to LaNiGa2 induces a significant enhancement of the superconducting transition temperature Tc at a pressure of 7 GPa. In contrast, powder X-ray diffraction (XRD) results show no evidence of structural phase transitions up to 26.3 GPa. Moreover, the ratio of band diffusivity shows a sudden increase at around 7 GPa, suggesting possible pressure-induced changes in the electronic structure that are closely linked to the evolution of superconductivity.
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Submitted 14 December, 2024;
originally announced December 2024.
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Atomic Structure of Self-Buffered BaZr(S,Se)$_3$ Epitaxial Thin Film Interfaces
Authors:
Michael Xu,
Kevin Ye,
Ida Sadeghi,
Rafael Jaramillo,
James M. LeBeau
Abstract:
Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular beam epitaxy and post-growth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achiev…
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Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular beam epitaxy and post-growth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achieved from self-assembly of an interface ``buffer'' layer, which accommodates the large film/substrate lattice mismatch of nearly 40\% for the alloy film studied here. The self-assembled buffer layer, occurring for both the as-grown sulfide and post-selenization alloy films, is shown to have rock-salt-like atomic stacking akin to a Ruddlesden-Popper phase. Above this buffer, the film quickly transitions to the perovskite structure. Overall, these results provide insights into oxide-chalcogenide heteroepitaxial film growth, illustrating a process that yields relaxed, crystalline, epitaxial chalcogenide perovskite films that support ongoing studies of optoelectronic and device properties.
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Submitted 30 July, 2024;
originally announced July 2024.
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A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange
Authors:
Kevin Ye,
Ida Sadeghi,
Michael Xu,
Jack Van Sambeek,
Tao Cai,
Jessica Dong,
Rishabh Kothari,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu…
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We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.
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Submitted 13 March, 2024;
originally announced March 2024.
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Vibrational properties differ between halide and chalcogenide perovskite semiconductors, and it matters for optoelectronic performance
Authors:
K. Ye,
M. Menahem,
T. Salzillo,
F. Knoop,
B. Zhao,
S. Niu,
O. Hellman,
J. Ravichandran,
R. Jaramillo,
O. Yaffe
Abstract:
We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-r…
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We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-radiative recombination, but the non-radiative recombination rate in BZS is between two and four orders of magnitude faster than in CPB. Raman spectroscopy reveals that the effects of phonon anharmonicity are far more pronounced in CPB than in BZS. Further, although both materials feature a large dielectric response due to low-energy polar optical phonons, the phonons in CPB are substantially lower in energy than in BZS. Our results suggest that electron-phonon coupling in BZS is more effective at non-radiative recombination than in CPB, and that BZS may also have a substantially higher concentration of non-radiative recombination centers than CPB. The low defect concentration in CPB may be related to the ease of lattice reconfiguration, typified by anharmonic bonding. It remains to be seen to what extent these differences are inherent to the chalcogenide and halide perovskites and to what extent they can be affected by materials processing; comparing BZS single-crystals and thin films provides reason for optimism.
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Submitted 14 April, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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High-temperature superconductivity with zero-resistance and strange metal behavior in La$_{3}$Ni$_{2}$O$_{7-δ}$
Authors:
Yanan Zhang,
Dajun Su,
Yanen Huang,
Zhaoyang Shan,
Hualei Sun,
Mengwu Huo,
Kaixin Ye,
Jiawen Zhang,
Zihan Yang,
Yongkang Xu,
Yi Su,
Rui Li,
Michael Smidman,
Meng Wang,
Lin Jiao,
Huiqiu Yuan
Abstract:
Recently signatures of superconductivity were observed close to 80 K in \LN\ under pressure. This discovery positions \LN\ as the first bulk nickelate with high-temperature superconductivity, but the lack of zero resistance presents a significant drawback for validating the findings. Here we report pressure measurements up to over 30 GPa using a liquid pressure medium and show that single crystals…
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Recently signatures of superconductivity were observed close to 80 K in \LN\ under pressure. This discovery positions \LN\ as the first bulk nickelate with high-temperature superconductivity, but the lack of zero resistance presents a significant drawback for validating the findings. Here we report pressure measurements up to over 30 GPa using a liquid pressure medium and show that single crystals of \LNO\ do exhibit zero resistance. We find that \LNO\ remains metallic under applied pressures, suggesting the absence of a metal-insulator transition proximate to the superconductivity. Analysis of the normal state $T$-linear resistance suggests an intricate link between this strange metal behaviour and superconductivity, whereby at high pressures both the linear resistance coefficient and superconducting transition are slowly suppressed by pressure, while at intermediate pressures both the superconductivity and strange metal behaviour appear disrupted, possibly due to a nearby structural instability. The association between strange metal behaviour and high-temperature superconductivity is very much in line with diverse classes of unconventional superconductors, including the cuprates and Fe-based superconductors. Understanding the superconductivity of \LNO\ evidently requires further revealing the interplay of strange metal behaviour, superconductivity, as well as possible competing electronic or structural phases.
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Submitted 18 April, 2024; v1 submitted 27 July, 2023;
originally announced July 2023.
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A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy
Authors:
Ida Sadeghi,
Jack Van Sambeek,
Tigran Simonian,
Michael Xu,
Kevin Ye,
Valeria Nicolosi,
James M. LeBeau,
R. Jaramillo
Abstract:
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular bea…
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Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.
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Submitted 29 December, 2022; v1 submitted 19 November, 2022;
originally announced November 2022.
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Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy
Authors:
Ida Sadeghi,
Kevin Ye,
Michael Xu,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing g…
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We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.
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Submitted 21 May, 2021;
originally announced May 2021.
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InterPhon: Ab initio Interface Phonon Calculations within a 3D Electronic Structure Framework
Authors:
In Won Yeu,
Gyuseung Han,
Kun Hee Ye,
Cheol Seong Hwang,
Jung-Hae Choi
Abstract:
This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon…
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This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon makes it possible to apply all of the phonon-based predictions that have been available for bulk systems, to interfacial systems. The first example, in which this package was applied to InAs surfaces, demonstrates a systematic structure search for unexplored surface reconstructions, navigated by the imaginary mode of surface phonons. It eventually explains the anisotropic surface vibrations of the polar crystal. The second example, involving oxygen adsorption on Cu, reveals adsorption-induced vibrational change and its contribution to energetic stability. The third example, on a Si/GaAs interface, shows distinct vibrational patterns depending on interfacial structures. It leads to a prediction regarding the structural transition of interfaces and unveils the processing conditions for spontaneous growth of GaAs nanowires on Si. High-level automation in InterPhon will be of great help in elucidating interfacial atomic dynamics and in implementing an automated computational workflow for diverse interfacial systems.
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Submitted 21 April, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Topological Photonic Crystal of Large Valley Chern Numbers
Authors:
Xiang Xi,
Kang-Ping Ye,
Rui-Xin Wu
Abstract:
The recent realizations of topological valley phase in photonic crystal, an analog of gapped valleytronic materials in electronic system, are limited to the valley Chern number of one. In this letter, we present a new type of valley phase that can have large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized…
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The recent realizations of topological valley phase in photonic crystal, an analog of gapped valleytronic materials in electronic system, are limited to the valley Chern number of one. In this letter, we present a new type of valley phase that can have large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized by changing the configuration of the unit cell. We demonstrate that these new topological phases can guide the wave propagation robustly along the domain wall of sharp bent. Our results are promising for the exploration of new topological phenomena in photonic systems.
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Submitted 1 April, 2020;
originally announced April 2020.
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Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$
Authors:
Shanyuan Niu,
Boyang Zhao,
Kevin Ye,
Elisabeth Bianco,
Jieyang Zhou,
Michael E. McConney,
Charles Settens,
Ralf Haiges,
R. Jaramillo,
Jayakanth Ravichandran
Abstract:
Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space g…
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Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.
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Submitted 12 September, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Thermal Stability Study of Transition Metal Perovskite Sulfides
Authors:
Shanyuan Niu,
JoAnna Milam-Guerrero,
Yucheng Zhou,
Kevin Ye,
Boyang Zhao,
Brent C. Melot,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lat…
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Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, α-SrZrS$_3$, β-SrZrS$_3$, BaZrS$_3$, Ba$_2$ZrS$_4$, and Ba$_3$Zr$_2$S$_7$. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden-Popper phases. Differential scanning calorimeter and thermo-gravimetric analysis measurements were performed up to 1200°C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 600°C.
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Submitted 9 July, 2018;
originally announced July 2018.
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Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides
Authors:
Shanyuan Niu,
Huaixun Huyan,
Yang Liu,
Matthew Yeung,
Kevin Ye,
Louis Blankemeier,
Thomas Orvis,
Debarghya Sarkar,
David J. Singh,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which…
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Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.
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Submitted 25 April, 2018;
originally announced April 2018.
