-
Advecting Scaffolds: Controlling The Remodelling Of Actomyosin With Anillin
Authors:
Denni Currin-Ross,
Sami C. Al-Izzi,
Ivar Noordstra,
Alpha S. Yap,
Richard G. Morris
Abstract:
We propose and analyse an active hydrodynamic theory that characterises the effects of the scaffold protein anillin. Anillin is found at major sites of cortical activity, such as adherens junctions and the cytokinetic furrow, where the canonical regulator of actomyosin remodelling is the small GTPase, RhoA. RhoA acts via intermediary 'effectors' to increase both the rates of activation of myosin m…
▽ More
We propose and analyse an active hydrodynamic theory that characterises the effects of the scaffold protein anillin. Anillin is found at major sites of cortical activity, such as adherens junctions and the cytokinetic furrow, where the canonical regulator of actomyosin remodelling is the small GTPase, RhoA. RhoA acts via intermediary 'effectors' to increase both the rates of activation of myosin motors and the polymerisation of actin filaments. Anillin has been shown to scaffold this action of RhoA - improving critical rates in the signalling pathway without altering the essential biochemistry - but its contribution to the wider spatio-temporal organisation of the cortical cytoskeleton remains poorly understood. Here, we combine analytics and numerics to show how anillin can non-trivially regulate the cytoskeleton at hydrodynamic scales. At short times, anillin can amplify or dampen existing contractile instabilities, as well as alter the parameter ranges over which they occur. At long times, it can change both the size and speed of steady-state travelling pulses. The primary mechanism that underpins these behaviours is established to be the advection of anillin by myosin II motors, with the specifics relying on the values of two coupling parameters. These codify anillin's effect on local signalling kinetics and can be traced back to its interaction with the acidic phospholipid phosphatidylinositol 4,5-bisphosphate (PIP2), thereby establishing a putative connection between actomyosin remodelling and membrane composition.
△ Less
Submitted 12 February, 2024;
originally announced February 2024.
-
Stability and Character of Zero Field Skyrmionic States in Hybrid Magnetic Multilayer Nanodots
Authors:
Alexander Kang-Jun Toh,
McCoy W. Lim,
T. S. Suraj,
Xiaoye Chen,
Hang Khume Tan,
Royston Lim,
Xuan Min Cheng,
Nelson Lim,
Sherry Yap,
Durgesh Kumar,
S. N. Piramanayagam,
Pin Ho,
Anjan Soumyanarayanan
Abstract:
Ambient magnetic skyrmions stabilized in multilayer nanostructures are of immense interest due to their relevance to magnetic tunnel junction (MTJ) devices for memory and unconventional computing applications. However, existing skyrmionic nanostructures built using conventional metallic or oxide multilayer nanodots are unable to concurrently fulfill the requirements of nanoscale skyrmion stability…
▽ More
Ambient magnetic skyrmions stabilized in multilayer nanostructures are of immense interest due to their relevance to magnetic tunnel junction (MTJ) devices for memory and unconventional computing applications. However, existing skyrmionic nanostructures built using conventional metallic or oxide multilayer nanodots are unable to concurrently fulfill the requirements of nanoscale skyrmion stability and feasibility of all-electrical readout and manipulation. Here, we develop a few-repeat hybrid multilayer platform consisting of metallic [Pt/CoB/Ir]3 and oxide [Pt/CoB/MgO] components that are coupled to evolve together as a single, composite stack. Zero-field (ZF) skyrmions with sizes as small as 50 nm are stabilized in the hybrid multilayer nanodots, which are smoothly modulated by up to 2.5x by varying CoB thickness and dot sizes. Meanwhile, skyrmion multiplets are also stabilized by small bias fields. Crucially, we observe higher order 'target' skyrmions with varying magnetization rotations in moderately-sized, low anisotropy nanodots. These results provide a viable route to realize long-sought skyrmionic MTJ devices and new possibilities for multi-state skyrmionic device concepts.
△ Less
Submitted 10 December, 2023;
originally announced December 2023.
-
All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction
Authors:
Shaohai Chen,
Pin Ho,
James Lourembam,
Alexander K. J. Toh,
Jifei Huang,
Xiaoye Chen,
Hang Khume Tan,
Sherry K. L. Yap,
Royston J. J. Lim,
Hui Ru Tan,
T. S. Suraj,
Yeow Teck Toh,
Idayu Lim,
Jing Zhou,
Hong Jing Chung,
Sze Ter Lim,
Anjan Soumyanarayanan
Abstract:
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) host…
▽ More
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multi-modal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal - 20-70% relative to uniform states - corresponds directly to skyrmion size. Further, the MTJ exploits complementary mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three nonvolatile electrical states. Crucially, it can write and delete skyrmions using current densities 1,000 times lower than state-of-the-art. These results provide a platform to incorporate readout and manipulation of skyrmionic bits across myriad device architectures, and a springboard to harness chiral spin textures for multi-bit memory and unconventional computing.
△ Less
Submitted 15 February, 2023;
originally announced February 2023.
-
Ghost factors in Gauss-sum factorization with transmon qubits
Authors:
Lin Htoo Zaw,
Yuanzheng Paul Tan,
Long Hoang Nguyen,
Rangga P. Budoyo,
Kun Hee Park,
Zhi Yang Koh,
Alessandro Landra,
Christoph Hufnagel,
Yung Szen Yap,
Teck Seng Koh,
Rainer Dumke
Abstract:
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previousl…
▽ More
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previously laid out in the literature. The presence of Type II ghost factors and the coherence time of the qubit set an upper limit for the total experiment time, and hence the largest factorizable number with this scheme. Discernability is a figure of merit introduced to characterize this behavior. We introduce preprocessing as a strategy to increase the discernability of a system, and demonstrate the technique with a transmon qubit. This can bring the total experiment time of the system closer to its decoherence limit, and increase the largest factorizable number.
△ Less
Submitted 8 December, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
-
Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions
Authors:
V. B. Naik,
H. Meng,
J. X. Xiao,
R. S. Liu,
A. Kumar,
K. Y. Zeng,
P. Luo,
S. Yap
Abstract:
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an…
▽ More
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintronic devices, by using dynamical magnetoelectric and piezoresponse force microscopy measurement techniques. We show that the applied electric-field induces strain in a few atomic layers of dielectric MgO which is transferred to magnetostrictive CoFeB layer, resulting in a magnetoelectric effect of magnitude up to 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated strain-mediated magnetoelectric effect with an electric field in magnetic tunnel junctions is a significant step towards exploring magnetoelectrically controlled spintronic devices for low-power and high density magnetic data storage applications.
△ Less
Submitted 15 November, 2013;
originally announced November 2013.
