Showing 1–40 of 40 results for author: Yankowitz, M

Giant elastoresistance in magic-angle twisted bilayer graphene

Authors: Xuetao Ma, Zhaoyu Liu, Jiaqi Cai, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Jiun-Haw Chu, Matthew Yankowitz

Abstract: Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (… ▽ More Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moiré material. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Comments: 21 pages, 16 figures

The 2D Materials Roadmap

Authors: Wencai Ren, Peter Bøggild, Joan Redwing, Kostya Novoselov, Luzhao Sun, Yue Qi, Kaicheng Jia, Zhongfan Liu, Oliver Burton, Jack Alexander-Webber, Stephan Hofmann, Yang Cao, Yu Long, Quan-Hong Yang, Dan Li, Soo Ho Choi, Ki Kang Kim, Young Hee Lee, Mian Li, Qing Huang, Yury Gogotsi, Nicholas Clark, Amy Carl, Roman Gorbachev, Thomas Olsen , et al. (48 additional authors not shown)

Abstract: Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and developme… ▽ More Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials. △ Less

Submitted 28 April, 2025; v1 submitted 28 March, 2025; originally announced March 2025.

Comments: 97 pages, to be published in 2D Materials

Low-lying Electronic Structure of Rare-Earth Based Topological Nodal Line Semimetal Candidate DySbTe

Authors: Nathan Valadez, Iftakhar Bin Elius, Dante James, Peter Radanovich, Tetiana Romanova, Sami Elgalal, Grzegorz Chajewski, Florie Mesple, Ellis Thompson, Keng Tou Chu, Matthew Yankowitz, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced spin-orbit coupling (SOC) effects. DySbTe, as a heavier lanthanide-based member of the LnSbTe family, stands out with its SOC and larger on site interactions on it… ▽ More Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced spin-orbit coupling (SOC) effects. DySbTe, as a heavier lanthanide-based member of the LnSbTe family, stands out with its SOC and larger on site interactions on its 4f electrons, which arise due to the heavier Dy element. Here, we present a comprehensive study on the low-temperature bulk physical properties and the electronic structure of DySbTe using magnetic susceptibility, heat capacity, and electrical resistivity measurements, along with high-resolution angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and spectroscopy (STM/S), and density functional theory calculations. Our thermodynamic measurements revealed an antiferromagnetic ordering below TN = 7.45 K and a subsequent magnetic phase transition at TN1 = 7.15 K. Our transport studies indicate a semimetallic behavior with unusual feature in the ordered state. Our ARPES measurements revealed a diamond-shaped Fermi pocket centered at the G point, with band features that evolve distinctly across various binding energies. STM/S results indicate a minimum in the density of states at around 100 meV below the Fermi level, and ARPES measurements reveal a significant gap present around the X point, differentiating DySbTe from other LnSbTe compounds. These findings enhance our understanding of the SOC effects on the electronic structure and topological properties in the LnSbTe family, highlighting DySbTe as a promising candidate for exploring the interplay between topology and magnetism. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Comments: 9 pages, 5 figures

Single-gate tracking behavior in flat-band multilayer graphene devices

Authors: Kryštof Kolář, Dacen Waters, Joshua Folk, Matthew Yankowitz, Cyprian Lewandowski

Abstract: A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is commonly assumed that $D$ causes the layer-by-layer potential to drop linearly across the structure. Here, we show that this assumption fails for a broad class of crys… ▽ More A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is commonly assumed that $D$ causes the layer-by-layer potential to drop linearly across the structure. Here, we show that this assumption fails for a broad class of crystalline and moiré vdW structures based on Bernal- or rhombohedral-stacked multilayer graphene. We find that the electronic properties at the Fermi level are largely dictated by special layer-polarized states arising at Bernal-stacked crystal faces, which typically coexist in the same band with layer-delocalized states. We uncover a novel mechanism by which the layer-delocalized states completely screen the layer-polarized states from the bias applied to the remote gate. This screening mechanism leads to an unusual scenario where voltages on either gate dope the band as expected, yet the band dispersion and associated electronic properties remain primarily (and sometimes exclusively) governed by the gate closer to the layer-polarized states. Our results reveal a novel electronic mechanism underlying the atypical single-gate-controlled transport characteristics observed across many flat-band graphitic structures, and provide key theoretical insights essential for accurately modeling these systems. △ Less

Submitted 13 March, 2025; originally announced March 2025.

Comments: 8 pages, 4 figures + supplemental materials; comments welcome

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Authors: Dacen Waters, Derek Waleffe, Ellis Thompson, Esmeralda Arreguin-Martinez, Jordan Fonseca, Thomas Poirier, James H. Edgar, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, David Cobden, Matthew Yankowitz

Abstract: Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gat… ▽ More Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moiré effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered. △ Less

Submitted 3 October, 2024; originally announced October 2024.

Comments: 7 pages, 4 figures, 12 supplementary information figures, 1 supplementary information table

Interplay of electronic crystals with integer and fractional Chern insulators in moiré pentalayer graphene

Authors: Dacen Waters, Anna Okounkova, Ruiheng Su, Boran Zhou, Jiang Yao, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Ya-Hui Zhang, Joshua Folk, Matthew Yankowitz

Abstract: The rapid development of moiré quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moiré lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexa… ▽ More The rapid development of moiré quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moiré lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moiré unit cell, we see a correlated insulator with a Chern number that can be tuned between $C=0$ and $+1$ by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, $ν$. Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moiré lattice. Upon applying a modest magnetic field, a narrow region forms around $ν=2/3$ in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional $ν$. In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moiré unit cell. Our results establish moiré RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 8 pages, 4 figures, extended data, 10 extended data figures, 13 supplementary information figures

Journal ref: Physical Review X 15, 011045 (2025)

Strongly interacting Hofstadter states in magic-angle twisted bilayer graphene

Authors: Minhao He, Xiaoyu Wang, Jiaqi Cai, Jonah Herzog-Arbeitman, Takashi Taniguchi, Kenji Watanabe, Ady Stern, B. Andrei Bernevig, Matthew Yankowitz, Oskar Vafek, Xiaodong Xu

Abstract: Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG de… ▽ More Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG device, notably including symmetry-broken Chern insulator (SBCI) states and fractional quantum Hall (FQH) states. The observed SBCI states form a cascade with their Chern numbers mimicking the main sequence correlated Chern insulators. The FQH states in MATBG form in Jain sequence; however, they disappear at high magnetic field, distinct from conventional FQH states which strengthen with increasing magnetic field. We reveal a unique magnetic field-driven phase transition from composite fermion phases to a dissipative Fermi liquid. Our theoretical analysis of the magnetic subbands hosting FQH states predicts non uniform quantum geometric properties far from the lowest Landau level. This points towards a more natural interpretation of these FQH states as in-field fractional Chern insulators of the magnetic subbands. △ Less

Submitted 2 August, 2024; originally announced August 2024.

Topological electronic crystals in twisted bilayer-trilayer graphene

Authors: Ruiheng Su, Dacen Waters, Boran Zhou, Kenji Watanabe, Takashi Taniguchi, Ya-Hui Zhang, Matthew Yankowitz, Joshua Folk

Abstract: In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form a form of topological electron crystal known as an anomalous Hall crystal. Here… ▽ More In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form a form of topological electron crystal known as an anomalous Hall crystal. Here, we report the observation of a generalized version of the anomalous Hall crystal in twisted bilayer-trilayer graphene, whose formation is driven by the moire potential. The crystal forms at a band filling factor of one electron per four moiré unit cells ($ν=1/4$) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between $+1$ and $-1$ by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from $ν=1/3$, $1/2$, $2/3$, and $3/2$. The quantum geometry of the folded bands is likely very different from that of the original parent band, enabling possible future discoveries of correlation-driven topological phenomena △ Less

Submitted 13 September, 2024; v1 submitted 25 June, 2024; originally announced June 2024.

Journal ref: Nature 637, 1084 (2025)

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

Authors: Ellis Thompson, Keng Tou Chu, Florie Mesple, Xiao-Wei Zhang, Chaowei Hu, Yuzhou Zhao, Heonjoon Park, Jiaqi Cai, Eric Anderson, Kenji Watanabe, Takashi Taniguchi, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav… ▽ More In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, Extended Data, 9 figures, Supplementary Information, 8 pages, 5 figures

Topological flat bands in a family of multilayer graphene moiré lattices

Authors: Dacen Waters, Ruiheng Su, Ellis Thompson, Anna Okounkova, Esmeralda Arreguin-Martinez, Minhao He, Katherine Hinds, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Ya-Hui Zhang, Joshua Folk, Matthew Yankowitz

Abstract: Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second fami… ▽ More Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second family of twisted graphene multilayers made up of twisted sheets of $M$- and $N$-layer Bernal-stacked graphene flakes. Calculations indicate that applying an electric displacement field isolates a flat and topological moiré conduction band that is primarily localized to a single graphene sheet below the moiré interface. Phenomenologically, the result is a striking similarity in the hierarchies of symmetry-broken phases across this family of twisted graphene multilayers. Our results show that this family of structures offers promising new opportunities for the discovery of exotic new correlated and topological phenomena, enabled by using the layer number to fine tune the flat moiré band and its screening environment. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, extended data, 10 extended data figures, 19 supplementary information figures

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Authors: Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzhou Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Jihui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun-Haw Chu

Abstract: Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optic… ▽ More Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques. △ Less

Submitted 23 May, 2024; v1 submitted 1 April, 2024; originally announced April 2024.

Comments: 9 pages, 6 figures, to appear in Journal of Applied Physics

Journal ref: J. Appl. Phys. 135, 204306 (2024)

Electronic interactions in Dirac fluids visualized by nano-terahertz spacetime interference of electron-photon quasiparticles

Authors: Suheng Xu, Yutao Li, Rocco A. Vitalone, Ran Jing, Aaron J. Sternbach, Shuai Zhang, Julian Ingham, Milan Delor, James. W. McIver, Matthew Yankowitz, Raquel Queiroz, Andrew J. Millis, Michael M. Fogler, Cory R. Dean, Abhay N. Pasupathy, James Hone, Mengkun Liu, D. N. Basov

Abstract: Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here we show that polaritonic interference patterns are particularly well suited to unveil the interactions in… ▽ More Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here we show that polaritonic interference patterns are particularly well suited to unveil the interactions in Dirac fluids by tracking polaritonic interference in time at temporal scales commensurate with the electronic scattering. Spacetime SPP interference patterns recorded in tera-hertz (THz) frequency range provided unobstructed readouts of the group velocity and lifetime of polariton that can be directly mapped onto the electronic spectral weight and the relaxation rate. Our data uncovered prominent departures of the electron dynamics from the predictions of the conventional Fermi-liquid theory. The deviations are particularly strong when the densities of electrons and holes are approximately equal. The proposed spacetime imaging methodology can be broadly applied to probe the electrodynamics of quantum materials. △ Less

Submitted 10 July, 2024; v1 submitted 19 November, 2023; originally announced November 2023.

Dynamically tunable moiré Rydberg excitons in a monolayer semiconductor on twisted bilayer graphene

Authors: Minhao He, Jiaqi Cai, Huiyuan Zheng, Eric Seewald, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, Matthew Yankowitz, Abhay Pasupathy, Wang Yao, Xiaodong Xu

Abstract: Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to t… ▽ More Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to twisted bilayer graphene (TBG) near the magic-angle. Due to its flat electronic bands, charge distribution is highly localized and forms a triangular lattice in TBG. Tuning the local charge density via electrostatic gating, TBG thus provides a spatially varying and dynamically tunable dielectric superlattice for modulating monolayer exciton wavefunctions. By performing optical reflection spectroscopy, we observe emergent moiré exciton Rydberg branches in monolayer WSe2 with increased energy splitting upon doping TBG. The twist-angle dependence reveals that the observation is due to a hybridization between bright and dark Rydberg states enabled by the moiré potential. Further, at the magic-angle near 1.1°, the moiré Rydberg excitons form a sawtooth pattern with doping owing to the formation of strongly correlated states in the TBG. Our study provides a new platform for engineering moiré excitons as well as optical accessibility to the electronic states with small correlation gaps in TBG. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Mixed-dimensional moiré systems of graphitic thin films with a twisted interface

Authors: Dacen Waters, Ellis Thompson, Esmeralda Arreguin-Martinez, Manato Fujimoto, Yafei Ren, Kenji Watanabe, Takashi Taniguchi, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the pro… ▽ More Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Layered semimetals such as graphite offer a unique platform to challenge this paradigm, owing to distinctive properties arising from their nearly-compensated electron and hole bulk doping. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and small magnetic fields, transport is mediated by a combination of gate-tunable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states owing to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene-graphite as the first in a new class of mixed-dimensional moiré materials. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Comments: 18 pages, 14 figures, 5 supplementary videos in ancillary files

Gate-tunable proximity effects in graphene on layered magnetic insulators

Authors: Chun-Chih Tseng, Tiancheng Song, Qianni Jiang, Zhong Lin, Chong Wang, Jaehyun Suh, Kenji Watanabe, Takashi Taniguchi, Michael A. McGuire, Di Xiao, Jiun-Haw Chu, David H. Cobden, Xiaodong Xu, Matthew Yankowitz

Abstract: The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving… ▽ More The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI$_3$, CrBr$_3$, and CrCl$_3$). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical transport features. These include highly extended quantum Hall plateaus, abrupt reversals in the Landau level filling sequence, and hysteresis over at least days-long time scales. In the case of CrI$_3$, we are able to completely suppress the charge transfer and all attendant atypical transport effects by gating. The charge transfer can additionally be altered in a first-order phase transition upon switching the magnetic states of the nearest CrI$_3$ layers. Our results provide a roadmap for exploiting the magnetic proximity effect in graphene, and motivate further experiments with other magnetic insulators. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 24 pages, 22 figures

Anomalous Hall effect at half filling in twisted bilayer graphene

Authors: Chun-Chih Tseng, Xuetao Ma, Zhaoyu Liu, Kenji Watanabe, Takashi Taniguchi, Jiun-Haw Chu, Matthew Yankowitz

Abstract: Magic-angle twisted bilayer graphene (tBLG) has been studied extensively owing to its wealth of symmetry-broken phases, correlated Chern insulators, orbital magnetism, and superconductivity. In particular, the anomalous Hall effect (AHE) has been observed at odd integer filling factors ($ν=1$ and $3$) in a small number of tBLG devices, indicating the emergence of a zero-field orbital magnetic stat… ▽ More Magic-angle twisted bilayer graphene (tBLG) has been studied extensively owing to its wealth of symmetry-broken phases, correlated Chern insulators, orbital magnetism, and superconductivity. In particular, the anomalous Hall effect (AHE) has been observed at odd integer filling factors ($ν=1$ and $3$) in a small number of tBLG devices, indicating the emergence of a zero-field orbital magnetic state with spontaneously broken time-reversal symmetry. However, the AHE is typically not anticipated at half filling ($ν=2$) owing to competing intervalley coherent states, as well as spin-polarized and valley Hall states that are favored by an intervalley Hund's coupling. Here, we present measurements of two tBLG devices with twist angles slightly away from the magic angle (0.96$^{\circ}$ and 1.20$^{\circ}$), in which we report the surprising observation of the AHE at $ν=+2$ and $-2$, respectively. These findings imply that a valley-polarized phase can become the ground state at half filling in tBLG rotated slightly away from the magic angle. Our results reveal the emergence of an unexpected ground state in the intermediately-coupled regime ($U/W \sim 1$, where $U$ is the strength of Coulomb repulsion and $W$ is the bandwidth), in between the strongly-correlated insulator and weakly-correlated metal, highlighting the need to develop a more complete understanding of tBLG away from the strongly-coupled limit. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 13 pages, 10 figures

Journal ref: Nat. Phys. 18, 1038-1042 (2022)

Symmetry-broken Chern insulators in twisted double bilayer graphene

Authors: Minhao He, Jiaqi Cai, Ya-Hui Zhang, Yang Liu, Yuhao Li, Takashi Taniguchi, Kenji Watanabe, David H. Cobden, Matthew Yankowitz, Xiaodong Xu

Abstract: Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, b… ▽ More Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, based on measurements on over a dozen tDBG devices encompassing the two distinct stacking configurations in which the constituent Bernal bilayer graphene sheets are rotated either slightly away from 0° or 60°. We find a hierarchy of symmetry-broken states that emerge sequentially as the twist angle approaches an apparent optimal value of $θ\approx$ 1.34°. Among them, we discover a sequence of symmetry-broken Chern insulator (SBCI) states that arise only within a narrow range of twist angles ($\approx$ 1.33° to 1.39°). We observe an associated anomalous Hall effect at zero field in all samples supporting SBCI states, indicating spontaneous time-reversal symmetry breaking and possible moiré unit cell enlargement at zero magnetic field. △ Less

Submitted 7 September, 2023; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: 42 pages

Journal ref: Nano Letters (2023)

Unusual magnetotransport in twisted bilayer graphene

Authors: Joe Finney, Aaron L. Sharpe, Eli J. Fox, Connie L. Hsueh, Daniel E. Parker, Matthew Yankowitz, Shaowen Chen, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Ashvin Vishwanath, Marc Kastner, David Goldhaber-Gordon

Abstract: We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For… ▽ More We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For a large range of densities around half filling of the moiré bands, magnetoresistance is large and quadratic. Over these same densities, the magnetoresistance minima corresponding to gaps between Landau levels split and bend as a function of density and field. We reproduce the same splitting and bending behavior in a simple tight-binding model of Hofstadter's butterfly on a square lattice with anisotropic hopping terms. These features appear to be a generic class of experimental manifestations of Hofstadter's butterfly and may provide insight into the emergent states of twisted bilayer graphene. △ Less

Submitted 11 June, 2021; v1 submitted 5 May, 2021; originally announced May 2021.

Comments: 8 pages, 4 figures; updated supplemental material; added additional device measurements and updated toy model

Unraveling intrinsic flexoelectricity in twisted double bilayer graphene

Authors: Yuhao Li, Xiao Wang, Deqi Tang, Xi Wang, K. Watanabe, T. Taniguchi, Daniel R. Gamelin, David H. Cobden, Matthew Yankowitz, Xiaodong Xu, Jiangyu Li

Abstract: Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polariza… ▽ More Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polarizations was reported in twisted bilayer graphene (tBG), though theoretically predicted value is $180^{\circ}$. Here we developed a methodology to extract intrinsic moiré flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, we found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained three-fold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with our theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. Our work provides a general strategy for unraveling intrinsic flexoelectricity in van der Waals moiré superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials. △ Less

Submitted 27 June, 2021; v1 submitted 6 April, 2021; originally announced April 2021.

Competing correlated states and abundant orbital magnetism in twisted monolayer-bilayer graphene

Authors: Minhao He, Ya-Hui Zhang, Yuhao Li, Zaiyao Fei, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Matthew Yankowitz

Abstract: Flat band moiré superlattices have recently emerged as unique platforms for investigating the interplay between strong electronic correlations, nontrivial band topology, and multiple isospin 'flavor' symmetries. Twisted monolayer-bilayer graphene (tMBG) is an especially rich system owing to its low crystal symmetry and the tunability of its bandwidth and topology with an external electric field. H… ▽ More Flat band moiré superlattices have recently emerged as unique platforms for investigating the interplay between strong electronic correlations, nontrivial band topology, and multiple isospin 'flavor' symmetries. Twisted monolayer-bilayer graphene (tMBG) is an especially rich system owing to its low crystal symmetry and the tunability of its bandwidth and topology with an external electric field. Here, we find that orbital magnetism is abundant within the correlated phase diagram of tMBG, giving rise to the anomalous Hall effect (AHE) in correlated metallic states nearby most odd integer fillings of the flat conduction band, as well as correlated Chern insulator states stabilized in an external magnetic field. The behavior of the states at zero field appears to be inconsistent with simple spin and valley polarization for the specific range of twist angles we investigate, and instead may plausibly result from an intervalley coherent (IVC) state with an order parameter that breaks time reversal symmetry. The application of a magnetic field further tunes the competition between correlated states, in some cases driving first-order topological phase transitions. Our results underscore the rich interplay between closely competing correlated ground states in tMBG, with possible implications for probing exotic IVC ordering. △ Less

Submitted 11 January, 2021; originally announced January 2021.

Comments: 22 Pages, 13 Figures

Abrupt switching of the anomalous Hall effect by field-rotation in nonmagnetic ZrTe5

Authors: Joshua Mutch, Xuetao Ma, Chong Wang, Paul Malinowski, Joss Ayres-Sims, Qianni Jiang, Zhaoyu Liu, Di Xiao, Matthew Yankowitz, Jiun-Haw Chu

Abstract: The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the… ▽ More The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down to an extremely low field of 0.03 T. By varying the carrier density of ZrTe5 over three orders of magnitude, we show that this singular behavior is due to the anomalous Hall effect generated by the ultra-dilute massive Dirac carriers in the quantum limit of Pauli paramagnetism when the Zeeman energy exceeds the Fermi energy. Our results elucidate the origin of the anomalous Hall effect in ZrTe5, arising owing to the spin-polarized massive Dirac electrons rather than the separation of Weyl nodes. △ Less

Submitted 12 January, 2021; v1 submitted 7 January, 2021; originally announced January 2021.

Comments: 19 pages, 13 figures

Electrically tunable correlated and topological states in twisted monolayer-bilayer graphene

Authors: Shaowen Chen, Minhao He, Ya-Hui Zhang, Valerie Hsieh, Zaiyao Fei, K. Watanabe, T. Taniguchi, David H. Cobden, Xiaodong Xu, Cory R. Dean, Matthew Yankowitz

Abstract: Twisted van der Waals heterostructures with flat electronic bands have recently emerged as a platform for realizing correlated and topological states with an extraordinary degree of control and tunability. In graphene-based moiré heterostructures, the correlated phase diagram and band topology depend strongly on the number of graphene layers, their relative stacking arrangement, and details of the… ▽ More Twisted van der Waals heterostructures with flat electronic bands have recently emerged as a platform for realizing correlated and topological states with an extraordinary degree of control and tunability. In graphene-based moiré heterostructures, the correlated phase diagram and band topology depend strongly on the number of graphene layers, their relative stacking arrangement, and details of the external environment from the encapsulating crystals. Here, we report that the system of twisted monolayer-bilayer graphene (tMBG) hosts a variety of correlated metallic and insulating states, as well as topological magnetic states. Because of its low symmetry, the phase diagram of tMBG approximates that of twisted bilayer graphene when an applied perpendicular electric field points from the bilayer towards the monolayer graphene, or twisted double bilayer graphene when the field is reversed. In the former case, we observe correlated states which undergo an orbitally driven insulating transition above a critical perpendicular magnetic field. In the latter case, we observe the emergence of electrically tunable ferromagnetism at one-quarter filling of the conduction band, with a large associated anomalous Hall effect. Uniquely, the magnetization direction can be switched purely with electrostatic doping at zero magnetic field. Our results establish tMBG as a highly tunable platform for investigating a wide array of tunable correlated and topological states. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Comments: 21 Pages, 20 Figures

Report number: Nature Physics, 10.1038/s41567-020-01062-6 (2020)

Tunable correlation-driven symmetry breaking in twisted double bilayer graphene

Authors: Minhao He, Yuhao Li, Jiaqi Cai, Yang Liu, K. Watanabe, T. Taniguchi, Xiaodong Xu, Matthew Yankowitz

Abstract: A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive… ▽ More A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 15 Pages, 15 Figures

Report number: Nature Physics, 10.1038/s41567-020-1030-6 (2020)

Switching 2D Magnetic States via Pressure Tuning of Layer Stacking

Authors: Tiancheng Song, Zaiyao Fei, Matthew Yankowitz, Zhong Lin, Qianni Jiang, Kyle Hwangbo, Qi Zhang, Bosong Sun, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, David Graf, Ting Cao, Jiun-Haw Chu, David H. Cobden, Cory R. Dean, Di Xiao, Xiaodong Xu

Abstract: The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hy… ▽ More The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hydrostatic pressure to decrease the interlayer spacing. In the recently discovered 2D magnets, theory suggests that the interlayer exchange coupling strongly depends on layer separation, while the stacking arrangement can even change the sign of the magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the 2D magnet CrI3. We probe the magnetic states using tunneling and scanning magnetic circular dichroism microscopy measurements. We find that the interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI3, pressure induces a transition from layered antiferromagnetic to ferromagnetic phases. In trilayer CrI3, pressure can create coexisting domains of three phases, one ferromagnetic and two distinct antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Tunable crystal symmetry in graphene-boron nitride heterostructures with coexisting moiré superlattices

Authors: Nathan R. Finney, Matthew Yankowitz, Lithurshanaa Muraleetharan, K. Watanabe, T. Taniguchi, Cory R. Dean, James Hone

Abstract: In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moiré superlattices. These moiré patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating… ▽ More In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moiré superlattices. These moiré patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating states, and moiré excitons. Here, we investigate monolayer graphene encapsulated between two crystals of boron nitride (BN), where the rotational alignment between all three components can be varied. We find that band gaps in the graphene arising from perfect rotational alignment with both BN layers can be modified substantially depending on whether the relative orientation of the two BN layers is 0 or 60 degrees, suggesting a tunable transition between the absence or presence of inversion symmetry in the heterostructure. Small deviations ($<1^{\circ}$) from perfect alignment of all three layers leads to coexisting long-wavelength moiré potentials, resulting in a highly reconstructed graphene band structure featuring multiple secondary Dirac points. Our results demonstrate that the interplay between multiple moiré patterns can be utilized to controllably modify the electronic properties of the composite heterostructure. △ Less

Submitted 26 March, 2019; originally announced March 2019.

Comments: 14 Pages, 12 Figures

Journal ref: Nature Nanotechnology 10.1038/s41565-019-0547-2 (2019)

Phonon scattering dominated electron transport in twisted bilayer graphene

Authors: H. Polshyn, M. Yankowitz, S. Chen, Y. Zhang, K. Watanabe, T. Taniguchi, C. R. Dean, A. F. Young

Abstract: Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $θ\approx1.1^\circ$. At low temperature a variety of phases are observed that appear to be driven by electron interactions including insulating states, superconductivity, and magnetism. Electrical transport in… ▽ More Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $θ\approx1.1^\circ$. At low temperature a variety of phases are observed that appear to be driven by electron interactions including insulating states, superconductivity, and magnetism. Electrical transport in the high temperature regime has received less attention but is also highly anomalous, exhibiting gigantic resistance enhancement and non-monotonic temperature dependence. Here we report on the evolution of the scattering mechanisms in tBLG over a wide range of temperature and for twist angle varying from 0.75$^\circ$ - 2$^\circ$. We find that the resistivity, $ρ$, exhibits three distinct phenomenological regimes as a function of temperature, $T$. At low $T$ the response is dominated by correlation and disorder physics; at high $T$ by thermal activation to higher moiré subbands; and at intermediate temperatures $ρ$ varies linearly with $T$. The $T$-linear response is much larger than in monolayer graphenefor all measured twist angles, and increases by more than three orders of magnitude for $θ$ near the flat-band condition. Our results point to the dominant role of electron-phonon scattering in twisted layer systems, with possible implications for the origin of the observed superconductivity. △ Less

Submitted 2 February, 2019; originally announced February 2019.

Magic Angle Spectroscopy

Authors: Alexander Kerelsky, Leo McGilly, Dante M. Kennes, Lede Xian, Matthew Yankowitz, Shaowen Chen, K. Watanabe, T. Taniguchi, James Hone, Cory Dean, Angel Rubio, Abhay N. Pasupathy

Abstract: The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moiré superlattice potentials arising from an interlayer twist between crystals. Moiré-tuning of the band structure has led to the recent discovery of superconductivity and correlated insulating phases in twisted bilayer graphene (TBLG) near the so-called "magic angle" of… ▽ More The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moiré superlattice potentials arising from an interlayer twist between crystals. Moiré-tuning of the band structure has led to the recent discovery of superconductivity and correlated insulating phases in twisted bilayer graphene (TBLG) near the so-called "magic angle" of $\sim$1.1°, with a phase diagram reminiscent of high T$_c$ superconductors. However, lack of detailed understanding of the electronic spectrum and the atomic-scale influence of the Moiré pattern has so far precluded a coherent theoretical understanding of the correlated states. Here, we directly map the atomic-scale structural and electronic properties of TBLG near the magic angle using scanning tunneling microscopy and spectroscopy (STM/STS). We observe two distinct van Hove singularities (vHs) in the LDOS which decrease in separation monotonically through 1.1° with the bandwidth (t) of each vHs minimized near the magic angle. When doped near half Moiré band filling, the conduction vHs shifts to the Fermi level and an additional correlation-induced gap splits the vHs with a maximum size of 7.5 meV. We also find that three-fold (C$_3$) rotational symmetry of the LDOS is broken in doped TBLG with a maximum symmetry breaking observed for states near the Fermi level, suggestive of nematic electronic interactions. The main features of our doping and angle dependent spectroscopy are captured by a tight-binding model with on-site (U) and nearest neighbor Coulomb interactions. We find that the ratio U/t is of order unity, indicating that electron correlations are significant in magic angle TBLG. Rather than a simple maximization of the DOS, superconductivity arises in TBLG at angles where the ratio U/t is largest, suggesting a pairing mechanism based on electron-electron interactions. △ Less

Submitted 26 December, 2018; v1 submitted 20 December, 2018; originally announced December 2018.

Comments: Main: 8 pages, 5 figures; Supporting Information: 6 pages, 5 figures

Journal ref: Nature 572, 95-100 (2019)

Tuning superconductivity in twisted bilayer graphene

Authors: Matthew Yankowitz, Shaowen Chen, Hryhoriy Polshyn, K. Watanabe, T. Taniguchi, David Graf, Andrea F. Young, Cory R. Dean

Abstract: Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer… ▽ More Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer coupling can also be modified to precisely tune these phases. We establish the capability to induce superconductivity at a twist angle larger than 1.1$^{\circ}$ $-$ in which correlated phases are otherwise absent $-$ by varying the interlayer spacing with hydrostatic pressure. Realizing devices with low disorder additionally reveals new details about the superconducting phase diagram and its relationship to the nearby insulator. Our results demonstrate twisted bilayer graphene to be a uniquely tunable platform for exploring novel correlated states. △ Less

Submitted 24 August, 2018; v1 submitted 23 August, 2018; originally announced August 2018.

Comments: 21 Pages, 14 Figures. (v2) Abstract updated

Journal ref: Science 10.1126/science.aav1910 (2019)

Dynamic band structure tuning of graphene moiré superlattices with pressure

Authors: Matthew Yankowitz, Jeil Jung, Evan Laksono, Nicolas Leconte, Bheema L. Chittari, K. Watanabe, T. Taniguchi, Shaffique Adam, David Graf, Cory R. Dean

Abstract: Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the closely-matched lattices yield a moiré superlattice that modifies the graphene electron dispersion and opens gaps both at the primary Dirac point (DP) and the… ▽ More Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the closely-matched lattices yield a moiré superlattice that modifies the graphene electron dispersion and opens gaps both at the primary Dirac point (DP) and the moiré-induced secondary Dirac point (SDP) in the valence band. While significant effort has focused on controlling the superlattice period via the rotational stacking order, the role played by the magnitude of the interlayer coupling has received comparatively little attention. Here, we modify the interaction between graphene and boron nitride by tuning their separation with hydrostatic pressure. We observe a dramatic enhancement of the DP gap with increasing pressure, but little change in the SDP gap. Our surprising results identify the critical role played by atomic-scale structural deformations of the graphene lattice and reveal new opportunities for band structure engineering in van der Waals heterostructures. △ Less

Submitted 19 September, 2017; v1 submitted 27 July, 2017; originally announced July 2017.

Comments: 26 Pages, 16 Figures. (v2) Main text and figures are updated

Journal ref: Nature 557, 404-408 (2018)

Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe$_2$

Authors: Martin V. Gustafsson, Matthew Yankowitz, Carlos Forsythe, Daniel Rhodes, Kenji Watanabe, Takashi Taniguchi, James Hone, Xiaoyang Zhu, Cory R. Dean

Abstract: Monolayers (MLs) of transition metal dichalcogenides (TMDs) exhibit unusual electrical behavior under magnetic fields due to their intrinsic spin-orbit coupling and lack of inversion symmetry. While recent experiments have also identified the critical role of carrier interactions within these materials, a complete mapping of the ambipolar Landau level (LL) sequence has remained elusive. Here, we u… ▽ More Monolayers (MLs) of transition metal dichalcogenides (TMDs) exhibit unusual electrical behavior under magnetic fields due to their intrinsic spin-orbit coupling and lack of inversion symmetry. While recent experiments have also identified the critical role of carrier interactions within these materials, a complete mapping of the ambipolar Landau level (LL) sequence has remained elusive. Here, we use single-electron transistors to perform LL spectroscopy in ML WSe$_2$, for the first time providing a comprehensive picture of the electronic structure of a ML TMD for both electrons and holes. We find that the LLs differ notably between the two bands, and follow a unique sequence in the valence band (VB) that is dominated by strong Zeeman effects. The Zeeman splitting in the VB is several times higher than the cyclotron energy, far exceeding the predictions of a single-particle model, and moreover tunes significantly with doping. This implies exceptionally strong many-body interactions, and suggests that ML WSe$_2$ can serve as a host for new correlated-electron phenomena. △ Less

Submitted 5 October, 2017; v1 submitted 25 July, 2017; originally announced July 2017.

Comments: 22 pages, 11 figures

Journal ref: Nature Materials 17 (2018) 411-415

Pressure-induced commensurate stacking of graphene on boron nitride

Authors: Matthew Yankowitz, K. Watanabe, T. Taniguchi, Pablo San-Jose, Brian J. LeRoy

Abstract: Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over… ▽ More Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunneling microscopy tip. For the special case of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking underneath the tip. Our results motivate future studies tailoring the electronic properties of van der Waals heterostructures by controlling the interlayer separation of the entire device using hydrostatic pressure. △ Less

Submitted 25 January, 2017; v1 submitted 10 March, 2016; originally announced March 2016.

Comments: 17 pages, 4 figures and supplementary information. Updated to published version

Journal ref: Nat. Commun. 7, 13168 (2016)

Local Spectroscopic Characterization of Spin and Layer Polarization in WSe$_2$

Authors: Matthew Yankowitz, Devin McKenzie, Brian J. LeRoy

Abstract: We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier… ▽ More We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS (FT-STS), we map the energy versus momentum dispersion relations for monolayer and bilayer WSe$_2$. Further, by tracking allowed and forbidden scattering channels as a function of energy we infer the spin texture of both the conduction and valence bands. We observe a large spin-splitting of the valence band due to strong spin-orbit coupling, and additionally observe spin-valley-layer coupling in the conduction band of bilayer WSe$_2$. △ Less

Submitted 29 July, 2015; v1 submitted 1 May, 2015; originally announced May 2015.

Comments: 5 pages, 4 figures

Evolution of the electronic band structure of twisted bilayer graphene upon doping

Authors: Shengqiang Huang, Matthew Yankowitz, Kanokporn Chattrakun, Arvinder Sandhu, Brian J. LeRoy

Abstract: The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge… ▽ More The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy of separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping. △ Less

Submitted 8 August, 2017; v1 submitted 30 April, 2015; originally announced April 2015.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 7, 7611 (2017)

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Authors: Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim, Jiamin Xue, Devin McKenzie, Shengqiang Huang, Marina Paggen, Mazhar N. Ali, Robert J. Cava, Emanuel Tutuc, Brian J. LeRoy

Abstract: The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insul… ▽ More The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices. △ Less

Submitted 24 November, 2014; originally announced November 2014.

Comments: 18 pages, 7 figures

Journal ref: Nano Lett. 15, 1925-1929 (2015)

Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering

Authors: Matthew Yankowitz, Joel I-Jan Wang, Suchun Li, A. Glen Birdwell, Yu-An Chen, Kenji Watanabe, Takashi Taniguchi, Su Ying Quek, Pablo Jarillo-Herrero, Brian J. LeRoy

Abstract: A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle… ▽ More A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as $γ_0 = 3.1$ eV, $γ_1 = 0.39$ eV, and $γ_4 = 0.22$ eV. △ Less

Submitted 3 June, 2014; originally announced June 2014.

Comments: 12 pages, 4 figures

Journal ref: APL Materials 2, 092503 (2014)

Electric Field Control of Soliton Motion and Stacking in Trilayer Graphene

Authors: Matthew Yankowitz, Joel I-Jan Wang, A. Glen Birdwell, Yu-An Chen, K. Watanabe, T. Taniguchi, Philippe Jacquod, Pablo San-Jose, Pablo Jarillo-Herrero, Brian J. LeRoy

Abstract: The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electron… ▽ More The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favored as the electric field increases. This ability to control the stacking order in graphene opens the way to novel devices which combine structural and electrical properties. △ Less

Submitted 29 January, 2014; originally announced January 2014.

Journal ref: Nature Materials 13, 786-789 (2014)

Graphene on Hexagonal Boron Nitride

Authors: Matthew Yankowitz, Jiamin Xue, Brian J. LeRoy

Abstract: The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication… ▽ More The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements. △ Less

Submitted 6 May, 2014; v1 submitted 20 January, 2014; originally announced January 2014.

Comments: Review article, 39 pages, 22 figures

Journal ref: J. Phys.: Condens. Matter 26 303201 (2014)

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

Authors: Matthew Yankowitz, Fenglin Wang, Chun Ning Lau, Brian J. LeRoy

Abstract: The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a wi… ▽ More The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices. △ Less

Submitted 8 April, 2013; v1 submitted 11 January, 2013; originally announced January 2013.

Journal ref: Phys. Rev. B 87, 165102 (2013)

Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride

Authors: Matthew Yankowitz, Jiamin Xue, Daniel Cormode, Javier D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, Philippe Jacquod, Brian J. LeRoy

Abstract: The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points… ▽ More The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points appear in the electronic structure of the material. Graphene on hexagonal boron nitride (hBN) exhibits a rotation dependent Moiré pattern. In this letter, we show experimentally and theoretically that this Moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. The local density of states near these Dirac cones exhibits hexagonal modulations indicating an anisotropic Fermi velocity. △ Less

Submitted 13 February, 2012; originally announced February 2012.

Comments: 16 pages, 6 figures

Journal ref: Nature Physics 8, 382-386 (2012)

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Authors: F. Amet, J. R. Williams, A. G. F. Garcia, M. Yankowitz, K. Watanabe, T. Taniguchi, D. Goldhaber-Gordon

Abstract: We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract prop- erties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measur… ▽ More We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract prop- erties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually-contrasting previous results of scanning tunneling microscopy in graphene. △ Less

Submitted 12 August, 2011; originally announced August 2011.