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Microscopic Theory of Superconducting Phase Diagram in Infinite-Layer Nickelates
Authors:
T. Y. Xie,
Z. Liu,
Chao Cao,
Z. F. Wang,
J. L. Yang,
W. Zhu
Abstract:
Since the discovery of superconductivity in infinite-layer nickelates RNiO$_2$ (R=La, Pr, Nd), great research efforts have been paid to unveil its underlying superconducting mechanism. However, the physical origin of the intriguing hole-doped superconductivity phase diagram, characterized by a superconductivity dome sandwiched between two weak insulators, is still unclear. Here, we present a micro…
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Since the discovery of superconductivity in infinite-layer nickelates RNiO$_2$ (R=La, Pr, Nd), great research efforts have been paid to unveil its underlying superconducting mechanism. However, the physical origin of the intriguing hole-doped superconductivity phase diagram, characterized by a superconductivity dome sandwiched between two weak insulators, is still unclear. Here, we present a microscopic theory for electronic structure of nickelates from a fundamental model-based perspective. We found that the appearance of weak insulator phase in lightly and heavily hole-doped regime is dominated by Mottness and Hundness, respectively, exhibiting a unique orbital-selective doping originated from the competition of Hund interaction and crystal field splitting. Moreover, the superconducting phase can also be created in the "mixed" transition regime between Mott-insulator and Hund-induced insulator, exactly reproducing the experimentally observed superconducting phase diagram. Our findings not only demonstrate the orbital-dependent strong-correlation physics in Ni 3$d$ states, but also provide a unified understanding of superconducting phase diagram in hole-doped infinite-layer nickelates, which are distinct from the well-established paradigms in cuprates and iron pnictides.
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Submitted 2 December, 2021;
originally announced December 2021.
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Vacancy Induced Splitting of Dirac Nodal Point in Graphene
Authors:
W. Zhu,
W. Li,
Q. W. Shi,
X. R. Wang,
X. P. Wang,
J. L. Yang,
J. G. Hou
Abstract:
We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting energy between the two nodal points is proportional to the square root of vacancy concentration. In addition, an extra dispersionless impurity band of zero energy d…
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We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting energy between the two nodal points is proportional to the square root of vacancy concentration. In addition, an extra dispersionless impurity band of zero energy due to particle-hole symmetry is found. Our theory offers an excellent explanation to the recent experiments.
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Submitted 15 September, 2011;
originally announced September 2011.
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Accurate evaluation of the Green's function of disordered graphenes
Authors:
W. Zhu,
Q. W. Shi,
X. R. Wang,
X. P. Wang,
J. L. Yang,
Jie Chen,
J. G. Hou
Abstract:
An accurate simulation of Green's function and self-energy function of non-interacting electrons in disordered graphenes are performed. Fundamental physical quantities such as the elastic relaxation time τe, the phase velocity vp, and the group velocity vg are evaluated. New features around the Dirac point are revealed, showing hints that multi-scattering induced hybridization of Bloch states play…
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An accurate simulation of Green's function and self-energy function of non-interacting electrons in disordered graphenes are performed. Fundamental physical quantities such as the elastic relaxation time τe, the phase velocity vp, and the group velocity vg are evaluated. New features around the Dirac point are revealed, showing hints that multi-scattering induced hybridization of Bloch states plays an important role in the vicinity of the Dirac point.
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Submitted 20 May, 2010;
originally announced May 2010.
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Superconductivity in iron telluride thin films under tensile stress
Authors:
Y. Han,
W. Y. Li,
L. X. Cao,
X. Y. Wang,
B. Xu,
B. R. Zhao,
Y. Q. Guo,
J. L. Yang
Abstract:
By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, an non-superconducting parent compound of the iron pnictides and chalcogenides, with transition temperature higher than that of its superconducting isostructural counterpart FeSe. For these tensile stressed films, the superconductivity is accompanied by the softening of the first-order magnetic…
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By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, an non-superconducting parent compound of the iron pnictides and chalcogenides, with transition temperature higher than that of its superconducting isostructural counterpart FeSe. For these tensile stressed films, the superconductivity is accompanied by the softening of the first-order magnetic and structural phase transition; and also, the in-plane extension and out-of-plane contraction are universal in all FeTe films independent of sign of lattice mismatch, either positive or negative. Moreover, the correlations were found exist between the transition temperatures and the tetrahedra bond angles in these thin films.
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Submitted 27 November, 2009;
originally announced November 2009.