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Nonreciprocal directional dichroism at telecom wavelengths
Authors:
K. Park,
M. O. Yokosuk,
M. Goryca,
J. J. Yang,
S. A. Crooker,
S. -W. Cheong,
K. Haule,
D. Vanderbilt,
H. -S. Kim,
J. L. Musfeldt
Abstract:
Magnetoelectrics with ultra-low symmetry and spin-orbit coupling are well known to display a number of remarkable properties including nonreciprocal directional dichroism. As a polar and chiral magnet, Ni$_3$TeO$_6$ is predicted to host this effect in three fundamentally different configurations, although only two have been experimentally verified. Inspired by the opportunity to unravel the struct…
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Magnetoelectrics with ultra-low symmetry and spin-orbit coupling are well known to display a number of remarkable properties including nonreciprocal directional dichroism. As a polar and chiral magnet, Ni$_3$TeO$_6$ is predicted to host this effect in three fundamentally different configurations, although only two have been experimentally verified. Inspired by the opportunity to unravel the structure-property relations of such a unique light-matter interaction, we combined magneto-optical spectroscopy and first-principles calculations to reveal nonreciprocity in the toroidal geometry and compared our findings with the chiral configurations. We find that formation of Ni toroidal moments is responsible for the largest effects near 1.1 eV - a tendency that is captured by our microscopic model and computational implementation. At the same time, we demonstrate deterministic control of nonreciprocal directional dichroism in Ni$_3$TeO$_6$ across the entire telecom wavelength range. This discovery will accelerate the development of photonics applications that take advantage of unusual symmetry characteristics.
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Submitted 4 March, 2022;
originally announced March 2022.
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2022 Roadmap on Neuromorphic Computing and Engineering
Authors:
Dennis V. Christensen,
Regina Dittmann,
Bernabé Linares-Barranco,
Abu Sebastian,
Manuel Le Gallo,
Andrea Redaelli,
Stefan Slesazeck,
Thomas Mikolajick,
Sabina Spiga,
Stephan Menzel,
Ilia Valov,
Gianluca Milano,
Carlo Ricciardi,
Shi-Jun Liang,
Feng Miao,
Mario Lanza,
Tyler J. Quill,
Scott T. Keene,
Alberto Salleo,
Julie Grollier,
Danijela Marković,
Alice Mizrahi,
Peng Yao,
J. Joshua Yang,
Giacomo Indiveri
, et al. (34 additional authors not shown)
Abstract:
Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas…
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Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices.
The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community.
https://doi.org/10.1088/2634-4386/ac4a83
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Submitted 13 January, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
Authors:
Chen-Yu Wang,
Shi-Jun Liang,
Shuang Wang,
Pengfei Wang,
Zhuan Li,
Zhongrui Wang,
Anyuan Gao,
Chen Pan,
Chuan Liu,
Jian Liu,
Huafeng Yang,
Xiaowei Liu,
Wenhao Song,
Cong Wang,
Xiaomu Wang,
Kunji Chen,
Zhenlin Wang,
Kenji Watanabe,
Takashi Taniguchi,
J. Joshua Yang,
Feng Miao
Abstract:
Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heteros…
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Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor.
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Submitted 25 March, 2020; v1 submitted 4 March, 2020;
originally announced March 2020.
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Magnetic imaging of antiferromagnetic domain walls
Authors:
Paul M. Sass,
Wenbo Ge,
Jiaqiang Yan,
D. Obeysekera,
J. J Yang,
Weida Wu
Abstract:
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$…
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The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
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Submitted 14 October, 2019;
originally announced October 2019.
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Nanoscale compositional evolution in complex oxide based resistive memories
Authors:
Taimur Ahmed,
Sumeet Walia,
Edwin L. H. Mayes,
Rajesh Ramanathan,
Paul Guagliardo,
Vipul Bansal,
Madhu Bhaskaran,
J. Joshua Yang,
Sharath Sriram
Abstract:
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional ch…
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Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].
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Submitted 30 June, 2018;
originally announced July 2018.
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Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension
Authors:
Shuang Pi,
Can Li,
Hao Jiang,
Weiwei Xia,
Huolin Xin,
J. Joshua Yang,
Qiangfei Xia
Abstract:
Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer d…
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Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer density up to 4.5 terabits per inch square, an order of magnitude denser than the state- of-the-art 64-layer triple level cell NAND flash technology. The memristors in the crossbars are 2 $\times$ 2 nm$^2$ in size, capable of switching with tens of nano ampere electric current. The densely packed memristor crossbars of extremely small working devices provides a power-efficient solution for high density information storage and processing.
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Submitted 27 May, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Robust memristors based on layered two-dimensional materials
Authors:
Miao Wang,
Songhua Cai,
Chen Pan,
Chenyu Wang,
Xiaojuan Lian,
Ye Zhuo,
Kang Xu,
Tianjun Cao,
Xiaoqing Pan,
Baigeng Wang,
Shijun Liang,
J. Joshua Yang,
Peng Wang,
Feng Miao
Abstract:
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report…
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Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene electrodes and their atomically sharp interfaces, are responsible for the observed thermal stability at elevated temperatures. A well-defined conduction channel and a switching mechanism based on the migration of oxygen ions were also revealed. In addition, the fully layered 2D materials offer a good mechanical flexibility for flexible electronic applications, manifested by our experimental demonstration of a good endurance against over 1000 bending cycles. Our results showcase a general and encouraging pathway toward engineering desired device properties by using 2D van der Waals heterostructures.
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Submitted 1 January, 2018;
originally announced January 2018.
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Successive magnetic field-induced transitions and colossal magnetoelectric effect in Ni$_{3}$TeO$_{6}$
Authors:
Jae Wook Kim,
S. Artyukhin,
E. D. Mun,
M. Jaime,
N. Harrison,
A. Hansen,
J. J. Yang,
Y. S. Oh,
D. Vanderbilt,
V. S. Zapf,
S. -W. Cheong
Abstract:
We report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni$_3$TeO$_6$ that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization change of 0.3 $μ$C/cm$^2$, a value that is 4 times larger than for the spin-flop transition at 9 T in the same material, and also comparable to the largest magnetic…
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We report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni$_3$TeO$_6$ that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization change of 0.3 $μ$C/cm$^2$, a value that is 4 times larger than for the spin-flop transition at 9 T in the same material, and also comparable to the largest magnetically-induced polarization changes observed to date. Via density-functional calculations we construct a full microscopic model that describes the data. We model the spin structures in all fields and clarify the physics behind the 52 T transition. The high-field transition involves a competition between multiple different exchange interactions which drives the polarization change through the exchange-striction mechanism. The resultant spin structure is rather counter-intuitive and complex, thus providing new insights on design principles for materials with strong magnetoelectric coupling.
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Submitted 15 September, 2015;
originally announced September 2015.
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Dimerization-Induced Fermi-Surface Reconstruction in IrTe2
Authors:
Man Jin Eom,
Kyoo Kim,
Y. J. Jo,
J. J. Yang,
E. S. Choi,
B. I. Min,
J. -H. Park,
S. -W. Cheong,
Jun Sung Kim
Abstract:
We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induc…
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We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induced by dimerization in both cases. A phase transition to the 1/8 phase with higher dimer density reveals that local instabilities associated with intra- and interdimer couplings are the main driving force for complex dimer formations in IrTe2.
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Submitted 16 December, 2014;
originally announced December 2014.
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Hierarchical stripe phases in IrTe2 driven by competition between Ir dimerization and Te bonding
Authors:
Jixia Dai,
Kristjan Haule,
J. J. Yang,
Y. S. Oh,
S-W. Cheong,
Weida Wu
Abstract:
Layered 5d transition metal dichalcogenide (TMD) IrTe2 is distinguished from the traditional TMDs (such as NbSe2) by the existence of multiple CDW-like stripe phases and superconductivity at low temperatures. Despite of intensive studies, there is still no consensus on the physical origin of the stripe phases or even the ground state modulation for this 5d material. Here, we present atomic-scale e…
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Layered 5d transition metal dichalcogenide (TMD) IrTe2 is distinguished from the traditional TMDs (such as NbSe2) by the existence of multiple CDW-like stripe phases and superconductivity at low temperatures. Despite of intensive studies, there is still no consensus on the physical origin of the stripe phases or even the ground state modulation for this 5d material. Here, we present atomic-scale evidence from scanning tunneling microscopy and spectroscopy (STM/STS), that the ground state of IrTe2 is a q=1/6 stripe phase, identical to that of the Se-doped compound. Furthermore, our data suggest that the multiple transitions and stripe phases are driven by the intralayer Ir-Ir dimerization that competes against the interlayer Te-Te bonding. The competition results in a unified phase diagram with a series of hierarchical modulated stripe phases, strikingly similar to the renowned "devil's staircase" phenomena.
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Submitted 8 December, 2014;
originally announced December 2014.
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Hysteretic melting transition of a soliton lattice in a commensurate charge modulation
Authors:
Pin-Jui Hsu,
Tobias Mauerer,
Matthias Vogt,
J. J. Yang,
Yoon Seok Oh,
S-W. Cheong,
Matthias Bode,
Weida Wu
Abstract:
We report on the observation of the hysteretic transition of a commensurate charge modulation in IrTe$_2$ from transport and scanning tunneling microscopy (STM) studies. Below the transition ($T_{\rm C} \approx 275$ K on cooling) a $q = 1/5$ charge modulation was observed, which is consistent with previous studies. Additional modulations [$q_n = (3n+2)^{-1}$] appear below a second transition at…
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We report on the observation of the hysteretic transition of a commensurate charge modulation in IrTe$_2$ from transport and scanning tunneling microscopy (STM) studies. Below the transition ($T_{\rm C} \approx 275$ K on cooling) a $q = 1/5$ charge modulation was observed, which is consistent with previous studies. Additional modulations [$q_n = (3n+2)^{-1}$] appear below a second transition at $T_{\rm S}\approx 180$ K on cooling. The coexistence of various modulations persist up to $T_{\rm C}$ on warming. The atomic structures of charge modulations and the temperature dependent STM studies suggest that 1/5 modulation is a periodic soliton lattice which partially melts below $T_{\rm S}$ on cooling. Our results provide compelling evidence that the ground state of IrTe$_2$ is a commensurate 1/6 charge modulation, which originates from periodic dimerization of Te atoms visualized by atomically resolved STM images.
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Submitted 12 November, 2013;
originally announced November 2013.
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Dimerization-Induced Cross-Layer Quasi-Two-Dimensionality in Metallic Iridate IrTe2
Authors:
G. L. Pascut,
K. Haule,
M. J. Gutmann,
S. A. Barnett,
A. Bombardi,
S. Artyukhin,
D. Vanderbilt,
J. J. Yang,
S. -W. Cheong,
V. Kiryukhin
Abstract:
The crystal structure of layered metal IrTe2 is determined using single-crystal x-ray diffraction. At T=220 K, it exhibits Ir and Te dimers forming a valence-bond crystal. Electronic structure calculations reveal an intriguing quasi-two-dimensional electronic state, with planes of reduced density of states cutting diagonally through the Ir and Te layers. These planes are formed by the Ir and Te di…
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The crystal structure of layered metal IrTe2 is determined using single-crystal x-ray diffraction. At T=220 K, it exhibits Ir and Te dimers forming a valence-bond crystal. Electronic structure calculations reveal an intriguing quasi-two-dimensional electronic state, with planes of reduced density of states cutting diagonally through the Ir and Te layers. These planes are formed by the Ir and Te dimers, which exhibit a signature of covalent bonding character development. Evidence for significant charge disproportionation among the dimerized and non-dimerized Ir (charge order) is also presented.
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Submitted 13 September, 2013;
originally announced September 2013.
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MnSb2O6: A polar magnet with a chiral crystal structure
Authors:
R. D. Johnson,
K. Cao,
L. C. Chapon,
F. Fabrizi,
N. Perks,
P. Manuel,
J. J. Yang,
Y. S. Oh,
S-W. Cheong,
P. G. Radaelli
Abstract:
Structural and magnetic chiralities are found to coexist in a small group of materials in which they produce intriguing phenomenologies such as the recently discovered skyrmion phases. Here, we describe a previously unknown manifestation of this interplay in MnSb2O6, a trigonal oxide with a chiral crystal structure. Unlike all other known cases, the MnSb2O6 magnetic structure is based on co-rotati…
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Structural and magnetic chiralities are found to coexist in a small group of materials in which they produce intriguing phenomenologies such as the recently discovered skyrmion phases. Here, we describe a previously unknown manifestation of this interplay in MnSb2O6, a trigonal oxide with a chiral crystal structure. Unlike all other known cases, the MnSb2O6 magnetic structure is based on co-rotating cycloids rather than helices. The coupling to the structural chirality is provided by a magnetic axial vector, related to the so-called vector chirality. We show that this unique arrangement is the magnetic ground state of the symmetric-exchange Hamiltonian, based on ab-initio theoretical calculations of the Heisenberg exchange interactions, and is stabilised by out-of-plane anisotropy. MnSb2O6 is predicted to be multiferroic with a unique ferroelectric switching mechanism.
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Submitted 17 June, 2013;
originally announced June 2013.
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Anionic depolymerization transition in IrTe2
Authors:
Yoon Seok Oh,
J. J. Yang,
Y. Horibe,
S. -W. Cheong
Abstract:
Selenium (Se) substitution drastically increases the transition temperature of iridium ditelluride (IrTe$_{2}$) to a diamagnetic superstructure from 278 K to 560 K. Transmission electron microscopy experiments revealed that this enhancement is accompanied by the evolution of non-sinusoidal structure modulations from $q = 1/5(10\bar{1})$- to $q = 1/6(10\bar{1})$-types. These comprehensive results a…
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Selenium (Se) substitution drastically increases the transition temperature of iridium ditelluride (IrTe$_{2}$) to a diamagnetic superstructure from 278 K to 560 K. Transmission electron microscopy experiments revealed that this enhancement is accompanied by the evolution of non-sinusoidal structure modulations from $q = 1/5(10\bar{1})$- to $q = 1/6(10\bar{1})$-types. These comprehensive results are consistent with the concept of the destabilization of polymeric Te-Te bonds at the transition, the temperature of which is increased by chemical and hydrostatic pressure and by the substitution of Te with the more electronegative Se. This temperature-induced depolymerization transition in IrTe$_{2}$ is unique in crystalline inorganic solids.
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Submitted 19 March, 2013;
originally announced March 2013.
