Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals
Authors:
Z. J. Yue,
X. L. Wang,
S. S. Yan
Abstract:
Three-dimensional (3D) Dirac semimetals are new quantum materials and can be viewed as 3D analogues of graphene. Many fascinating electronic properties have been proposed and realized in 3D Dirac semimetals, which demonstrates their potential applications in next generation quantum devices. Bismuth-antimony Bi1-xSbx can be tuned from a topological insulator to a band insulator through a quantum cr…
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Three-dimensional (3D) Dirac semimetals are new quantum materials and can be viewed as 3D analogues of graphene. Many fascinating electronic properties have been proposed and realized in 3D Dirac semimetals, which demonstrates their potential applications in next generation quantum devices. Bismuth-antimony Bi1-xSbx can be tuned from a topological insulator to a band insulator through a quantum critical point at x ~ 4%, where 3D Dirac fermions appear. Here, we report on a magnetotransport study of Bi1-xSbx at such a quantum critical point. An unusual magnetic-field induced semimetal-semiconductor phase transition was observed in the Bi0.96Sb0.04 single crystals. In a magnetic field of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of up to 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K. The observed magnetoresistances keep linear down to approximate zero-field when the temperature is below 200 K. Our experimental results are not only interesting for the fundamental physics of 3D Dirac semimetals, but also for potential applications of 3D Dirac semimetals in magnetoelectronic devices.
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Submitted 7 September, 2015;
originally announced September 2015.
Anomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature
Authors:
R. M. Qiao,
S. S. Yan,
T. S. Xu,
M. W. Zhao,
Y. X. Chen,
G. L. Liu,
W. L. Yang,
R. K. Zheng,
L. M. Mei
Abstract:
Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unu…
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Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.
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Submitted 22 June, 2014;
originally announced June 2014.
