Showing 1–7 of 7 results for author: Yamasaki, T

Contrasting pressure evolutions of $f$ electron hybridized states in CeRhIn$_5$ and YbNi$_3$Ga$_9$: an optical conductivity study

Authors: H. Okamura, A. Takigawa, T. Yamasaki, E. D. Bauer, S. Ohara, Y. Ikemoto, T. Moriwaki

Abstract: Optical conductivity [$σ(ω)$] of CeRhIn$_5$ and YbNi$_3$Ga$_9$ have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn$_5$, at ambient pressure the main feature in $σ(ω)$ is a Drude peak due to free carriers. With increasing pressure, however, a characteristic mid-infrared (mIR) peak rapidly develops in $σ(ω)$, and its peak energy and width increase with… ▽ More Optical conductivity [$σ(ω)$] of CeRhIn$_5$ and YbNi$_3$Ga$_9$ have been measured at external pressures to 10 GPa and at low temperatures to 6 K. Regarding CeRhIn$_5$, at ambient pressure the main feature in $σ(ω)$ is a Drude peak due to free carriers. With increasing pressure, however, a characteristic mid-infrared (mIR) peak rapidly develops in $σ(ω)$, and its peak energy and width increase with pressure. These features are consistent with an increased conduction ($c$)-$f$ electron hybridization at high pressure, and show that the pressure has tuned the electronic state of CeRhIn$_5$ from very weakly to strongly hybridized ones. As for YbNi$_3$Ga$_9$, in contrast, a marked mIR peak is observed already at ambient pressure, indicating a strong $c$-$f$ hybridization. At high pressures, however, the mIR peak shifts to lower energy and becomes diminished, and seems merged with the Drude component at 10 GPa. Namely, CeRhIn$_5$ and YbNi$_3$Ga$_9$ exhibit some opposite tendencies in the pressure evolutions of $σ(ω)$ and electronic structures. These results are discussed in terms of the pressure evolutions of $c$-$f$ hybridized electronic states in Ce and Yb compounds, in particular in terms of the electron-hole symmetry often considered between Ce and Yb compounds. △ Less

Submitted 15 October, 2019; v1 submitted 9 August, 2019; originally announced August 2019.

Comments: 20 pages, 6 figures, accepted to Physical Review B

Journal ref: Phys. Rev. B 100, 195112 (2019)

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Authors: So Takamoto, Takahiro Yamasaki, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi

Abstract: Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mec… ▽ More Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mechanism of the thermal oxidation of SiC remains to be solved. In this paper, a new Si-C-O interatomic potential was developed to reproduce the kinetics of the thermal oxidation of SiC. Using this newly developed potential, large-scale SiC oxidation simulations at various temperature were performed. The results showed that the activation energy of the Si-face is much larger than that of the C-face. In the case of the Si-face, a flat and aligned interface structure including Si${}^{1+}$ was created. Based on the estimated activation energies of the intermediate oxide states, it is proposed that the stability of the flat interface structure is the origin of the high activation energy of the oxidation of the Si-face. In contrast, in the case of the C-face, it is found that the Si atom at the interface are easily pulled up by the O atoms. This process generates the disordered interface and decreases the activation energy of the oxidation. It is also proposed that many excess C atoms are created in the case of the C-face. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Comments: Accepted for Journal of Applied Physics

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

Authors: So Takamoto, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi

Abstract: Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition… ▽ More Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition simulation enables us to observe the continuous growth process of the multi-ring carbon structure. The annealing simulation reveals the atomistic process by which the multi-ring carbon structure is transformed to flat graphene involving only 6-membered rings. Also, it is found that the surface atoms of the silicon carbide substrate enhance the homogeneous graphene formation. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: Accepted for Physical Review B

Journal ref: Phys.Rev.B97:125411(2018)

Ultrafast optical control of magnetization in EuO thin films

Authors: T. Makino, F. Liu, T. Yamasaki, Y. Kozuka, K. Ueno, A. Tsukazaki, T. Fukumura, Y. Kong, M. Kawasaki

Abstract: All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e.,… ▽ More All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e., enhancement of the magnetization and an inverse Faraday effect. From the magnetic field dependences of the frequency and the Gilbert damping parameter, the intrinsic Gilbert damping coefficient is evaluated to be α \approx 3\times10^-3. △ Less

Submitted 28 July, 2012; originally announced July 2012.

Comments: 5 pages, 3 figures, accepted for publication in Phys. Rev. B

Room Temperature Ferromagnetic Semiconductor Rutile Ti1-xCoxO2-δEpitaxial Thin Films Grown by Sputtering Method

Authors: Takashi Yamasaki, Tomoteru Fukumura, Masaki Nakano, Kazunori Ueno, Masashi Kawasaki

Abstract: Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent wit… ▽ More Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent with the high spin state Co2+ in this compound recently established by spectroscopic methods. Consequently, its originally large magneto-optical response is further enhanced. △ Less

Submitted 1 November, 2008; originally announced November 2008.

Comments: 15 pages, 4 figures

Journal ref: Appl. Phys. Express 1 (2008) 111302

A scaling relation of anomalous Hall effect in ferromagnetic semiconductors and metals

Authors: Tomoteru Fukumura, Hidemi Toyosaki, Kazunori Ueno, Masaki Nakano, Takashi Yamasaki, Masashi Kawasaki

Abstract: A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional… ▽ More A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional to sigma_xx_^1.6, that is coincident with a recent theory. This relation is valid over five decades of sigma_xx_ irrespective of metallic or hopping conduction. △ Less

Submitted 20 June, 2007; originally announced June 2007.

Comments: 10 pages, 1 table, 1 figure. To be published in Jpn. J. Appl. Phys. 46, issue 26 (2007)

Report number: cond-mat/07062924

Journal ref: Jpn. J. Appl. Phys. 46, L642 (2007)

Unmasking the nodal quasiparticle dynamics in cuprate superconductors using low-energy photoemission

Authors: T. Yamasaki, K. Yamazaki, A. Ino, M. Arita, H. Namatame, M. Taniguchi, A. Fujimori, Z. -X. Shen, M. Ishikado, S. Uchida

Abstract: Nodal quasiparticles of Bi2Sr2CaCu2O8 have been studied by angle-resolved photoemission spectroscopy with high momentum and energy resolution. Low-energy tunable photons have enabled us to resolve a small nodal bilayer splitting, unmasking the intrinsic single-particle scattering rate. The nodal scattering rate is abruptly suppressed upon the superconducting transition, and shows a linear energy… ▽ More Nodal quasiparticles of Bi2Sr2CaCu2O8 have been studied by angle-resolved photoemission spectroscopy with high momentum and energy resolution. Low-energy tunable photons have enabled us to resolve a small nodal bilayer splitting, unmasking the intrinsic single-particle scattering rate. The nodal scattering rate is abruptly suppressed upon the superconducting transition, and shows a linear energy dependence at low energies, indicating the nontrivial effect of elastic scatterings on the quasiparticles. With increasing energy, the antibonding-band scattering rate becomes higher than the bonding one. The observations imply the character of the scatterers dominant at low energies. △ Less

Submitted 3 May, 2007; v1 submitted 1 March, 2006; originally announced March 2006.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 75, 140513 (2007)