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Spatial Control of Charge Doping in n-Type Topological Insulators
Authors:
Kazuyuki Sakamoto,
Hirotaka Ishikawa,
Takashi Wake,
Chie Ishimoto,
Jun Fujii,
Hendrik Bentmann,
Minoru Ohtaka,
Kenta Kuroda,
Natsu Inoue,
Takuma Hattori,
Toshio Miyamachi,
Fumio Komori,
Isamu Yamamoto,
Cheng Fan,
Peter Krüger,
Hiroshi Ota,
Fumihiko Matsui,
Friedrich Reinert,
José Avila,
Maria C. Asensio
Abstract:
Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the short…
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Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.
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Submitted 26 March, 2025;
originally announced March 2025.
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Two-Dimensional Band Dispersion of Ultra-Flat Hexagonal Bismuthene Grown on Ag(111) Bulk and Quantum-Well Films
Authors:
Kazutoshi Takahashi,
Masaki Imamura,
Haruto Ikeda,
Ryosuke Koyama,
Isamu Yamamoto,
Junpei Azuma
Abstract:
Two-dimensional band dispersion of (2$\times$2) superstructure with Bi grown on Ag(111), which has been urged as an ultraflat hexagonal bismuthene, is investigated using angle-resolved photoemission spectroscopy (ARPES). The (2$\times$2)-Bi superstructure can be grown on the Ag(111) surface at low temperatures; it transforms into a surface alloy with a ($\sqrt{3}\times\sqrt{3}$) superstructure at…
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Two-dimensional band dispersion of (2$\times$2) superstructure with Bi grown on Ag(111), which has been urged as an ultraflat hexagonal bismuthene, is investigated using angle-resolved photoemission spectroscopy (ARPES). The (2$\times$2)-Bi superstructure can be grown on the Ag(111) surface at low temperatures; it transforms into a surface alloy with a ($\sqrt{3}\times\sqrt{3}$) superstructure at 300 K. ARPES measurements reveal the consistency with the band structure of ultraflat bismuthene in previous reports. The band structure of (2$\times$2)-Bi surface remains unchanged with decreasing Ag layer thickness, indicating the limited penetration of Bi p-orbitals into the Ag layer.
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Submitted 28 September, 2023; v1 submitted 4 July, 2023;
originally announced July 2023.
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One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)
Authors:
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Hiroshi Watanabe,
Takuto Nakamura,
Patrick Le Fèvre,
François Bertran,
Masaki Imamura,
Isamu Yamamoto,
Junpei Azuma,
Kazutoshi Takahashi,
Shin-ichi Kimura
Abstract:
Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the pr…
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Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.
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Submitted 3 June, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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Topological phase transitions driven by magnetic phase transitions in FexBi2Te3 (0 < x < 0.1) single crystals
Authors:
Heon-Jung Kim,
Ki-Seok Kim,
J. -F. Wang,
V. A. Kulbachinskii,
K. Ogawa,
M. Sasaki,
A. Ohnishi,
M. Kitaura,
Y. -Y. Wu,
L. Li,
I. Yamamoto,
J. Azuma,
M. Kamada,
V. Dobrosavljević
Abstract:
We propose a phase diagram for FexBi2Te3 (0 < x < 0.1) single crystals, which belong to a class of magnetically bulk-doped topological insulators. The evolution of magnetic correlations from ferromagnetic- to antiferromagnetic- gives rise to topological phase transitions, where the paramagnetic topological insulator of Bi2Te3 turns into a band insulator with ferromagnetic-cluster glassy behaviours…
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We propose a phase diagram for FexBi2Te3 (0 < x < 0.1) single crystals, which belong to a class of magnetically bulk-doped topological insulators. The evolution of magnetic correlations from ferromagnetic- to antiferromagnetic- gives rise to topological phase transitions, where the paramagnetic topological insulator of Bi2Te3 turns into a band insulator with ferromagnetic-cluster glassy behaviours around x ~ 0.025, and it further evolves to a topological insulator with valence-bond glassy behaviours, which spans over the region between x ~ 0.03 up to x ~ 0.1. This phase diagram is verified by measuring magnetization, magnetotransport, and angle-resolved photoemission spectra with theoretical discussions.
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Submitted 19 February, 2013;
originally announced February 2013.
