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Stabilizing charge density wave by mixing transition metal elements in monolayer XS$_2$ with trigonal-prismatic coordination
Authors:
Chi-Cheng Lee,
Yukiko Yamada-Takamura
Abstract:
The electronic structure and phonon dispersion of XS$_2$ with X = Co, Tc, Ti, Ru, Nb, and Rh in the monolayer MoS$_2$ structure with trigonal-prismatic coordination are studied from first principles. Although each XS$_2$ is dynamically unstable, CoS$_2$, TcS$_2$, RuS$_2$, and RhS$_2$ can be stabilized by developing charge density waves in the (2$\times$2) supercell, leading to metal-insulator tran…
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The electronic structure and phonon dispersion of XS$_2$ with X = Co, Tc, Ti, Ru, Nb, and Rh in the monolayer MoS$_2$ structure with trigonal-prismatic coordination are studied from first principles. Although each XS$_2$ is dynamically unstable, CoS$_2$, TcS$_2$, RuS$_2$, and RhS$_2$ can be stabilized by developing charge density waves in the (2$\times$2) supercell, leading to metal-insulator transitions. Without really needing the metal-insulator transitions and large atomic distortions, additional energy may be gained in the total energy by mixing transition metal elements to create high-entropy combinations for X, presenting a wide range of high-entropy XS$_2$ compounds that exhibit a variety of band structures, including direct- and indirect-gap semiconductors, metals, and semimetals.
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Submitted 30 June, 2024;
originally announced July 2024.
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Atomically-thin metallic Si and Ge allotropes with high Fermi velocities
Authors:
Chin-En Hsu,
Yung-Ting Lee,
Chieh-Chun Wang,
Chang-Yu Lin,
Yukiko Yamada-Takamura,
Taisuke Ozaki,
Chi-Cheng Lee
Abstract:
Silicon and germanium are the well-known materials used to manufacture electronic devices for the integrated circuits but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures which are more stable than the extensively studied semimeta…
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Silicon and germanium are the well-known materials used to manufacture electronic devices for the integrated circuits but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures which are more stable than the extensively studied semimetallic silicene and germanene, respectively. More importantly, the newly discovered two-dimensional allotropes of Si and Ge have Fermi velocities superior to the Dirac fermions in graphene, indicating that the metal wires needed in the silicon-based integrated circuits can be made of Si atom itself without incompatibility, allowing for all-silicon-based integrated circuits.
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Submitted 14 July, 2022;
originally announced July 2022.
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The hidden competing phase revealed by first-principles calculations of phonon instability in the nearly optimally doped cuprate La$_{1.875}$Sr$_{0.125}$CuO$_4$
Authors:
Chi-Cheng Lee,
Ji-Yao Chiu,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The representative cuprate, La$_{2-x}$M$_x$CuO$_4$, with M = Sr and $x = 1/8$ is studied via first-principles calculations in the high-temperature tetragonal (HTT), low-temperature orthorhombic (LTO), and low-temperature less-orthorhombic (LTLO) structures. By suppressing the magnetism and superconductivity, the LTLO phase, which has rarely been observed in La$_{2-x}$Sr$_x$CuO$_4$, is found to be…
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The representative cuprate, La$_{2-x}$M$_x$CuO$_4$, with M = Sr and $x = 1/8$ is studied via first-principles calculations in the high-temperature tetragonal (HTT), low-temperature orthorhombic (LTO), and low-temperature less-orthorhombic (LTLO) structures. By suppressing the magnetism and superconductivity, the LTLO phase, which has rarely been observed in La$_{2-x}$Sr$_x$CuO$_4$, is found to be the ground state, where the structural phase transitions, HTT$\rightarrow$LTO$\rightarrow$LTLO, can be understood via phonon instability. While the La-O composition is identified to be responsible for the phonon softening, the superconducting CuO$_2$ layer is dynamically stable. The LTLO phase, which can exhibit a $\sim$20 meV splitting in the density of states, is proposed to have an intimate relationship with the observed pseudogap and the charge density wave giving the stripe. We argue that at low temperatures, the superconducting LTO La$_{1.875}$Sr$_{0.125}$CuO$_4$ competes with the phonon-preferred LTLO phase by spontaneously forming the Cooper pairs, resulting in suppressing the stripe. Therefore, the revealed LTLO phase is indispensable for understanding La$_{2-x}$Sr$_x$CuO$_4$.
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Submitted 9 July, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Adatom-induced dislocation annihilation in epitaxial silicene
Authors:
Antoine Fleurence,
Yukiko Yamada-Takamura
Abstract:
The transformation of the stripe domain structure of spontaneously-formed epitaxial silicene on ZrB$_2$ thin film into a single-domain driven by the adsorption of a fraction of a monolayer of silicon was used to investigate how dislocations react and eventually annihilate in a two-dimensional honeycomb structure. The in-situ real time STM monitoring of the evolution of the domain structure after S…
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The transformation of the stripe domain structure of spontaneously-formed epitaxial silicene on ZrB$_2$ thin film into a single-domain driven by the adsorption of a fraction of a monolayer of silicon was used to investigate how dislocations react and eventually annihilate in a two-dimensional honeycomb structure. The in-situ real time STM monitoring of the evolution of the domain structure after Si deposition revealed the mechanisms leading to the nucleation of a single-domain into a domain structure through a stepwise reaction of partial dislocations. After its nucleation, the single-domain extends by the propagation of edge dislocations at its frontiers. The identification of this particular nucleation-propagation formation of dislocation-free silicene sheet provides insights into how crystallographic defects can be healed in two-dimensional materials.
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Submitted 15 October, 2020;
originally announced October 2020.
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First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure
Authors:
Hirokazu Nitta,
Takahiro Yonezawa,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The structural stability and electronic states of GaSe monolayer with trigonal-antiprismatic (AP) structure, which is a recently discovered new polymorph, were studied by first-principles calculations. The AP phase GaSe monolayer was found stable, and the differences in energy and lattice constant were small when compared to those calculated for a GaSe monolayer with conventional trigonal-prismati…
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The structural stability and electronic states of GaSe monolayer with trigonal-antiprismatic (AP) structure, which is a recently discovered new polymorph, were studied by first-principles calculations. The AP phase GaSe monolayer was found stable, and the differences in energy and lattice constant were small when compared to those calculated for a GaSe monolayer with conventional trigonal-prismatic (P) structure which was found to be the ground state. Moreover, it was revealed that the relative stability of P phase and AP phase GaSe monolayers reverses under tensile strain. These calculation results provide insight into the formation mechanism of AP phase GaSe monolayers in epitaxially-grown GaSe thin films.
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Submitted 3 June, 2020;
originally announced June 2020.
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Emergence of Nearly Flat Bands through an Embedded Kagome Lattice in an Epitaxial Two-dimensional Ge Layer on ZrB2(0001)
Authors:
Antoine Fleurence,
Chi-Cheng Lee,
Rainer Friedlein,
Yuki Fukaya,
Shinya Yoshimoto,
Kozo Mukai,
Hiroyuki Yamane,
Nobuhiro Kosugi,
Jun Yoshinobu,
Taisuke Ozaki,
Yukiko Yamada-Takamura
Abstract:
Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure which was recently predicted to be a flat band material. Angle-resolved photoemission experiments together with theoretical calculations verified the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions wit…
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Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure which was recently predicted to be a flat band material. Angle-resolved photoemission experiments together with theoretical calculations verified the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions with the substrate. This provides the first experimental evidence that a flat band can emerge from the electronic coupling between atoms and not from the geometry of the atomic structure.
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Submitted 1 May, 2020;
originally announced May 2020.
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Bandgap engineering in an epitaxial two-dimensional honeycomb Si$_{6-x}$Ge$_x$ alloy
Authors:
Antoine Fleurence,
Yuto Awatani,
Camille Huet,
Frank B. Wiggers,
Steaphan M. Wallace,
Takahiro Yonezawa,
Yukiko Yamada-Takamura
Abstract:
In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are ra…
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In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with $x$ observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.
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Submitted 11 March, 2020; v1 submitted 10 March, 2020;
originally announced March 2020.
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Hidden mechanism for embedding the flat bands of Lieb, kagome, and checkerboard lattices in other structures
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The interplay of hopping parameters that can give rise to flat bands in consequence of quantum interference in electronic, photonic, and other interesting materials has become an extensively studied topic. Most of the recognized structures having flat bands are the lattices that can be understood by the mathematical theory of line graphs, such as the Lieb, kagome, and checkerboard lattices. Here,…
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The interplay of hopping parameters that can give rise to flat bands in consequence of quantum interference in electronic, photonic, and other interesting materials has become an extensively studied topic. Most of the recognized structures having flat bands are the lattices that can be understood by the mathematical theory of line graphs, such as the Lieb, kagome, and checkerboard lattices. Here, we demonstrate that the structures that can realize the same kind of flat bands given by those well-known lattices hosting exotic quantum phases are more flexible. The flat bands belonging to the recognized structures can be ideally embedded into the new structures that cannot be considered as the original ones in terms of a unitary transformation. The uncovered mechanism enriches the understanding of physics behind the localized quantum states and broadens the choice of materials that can be used for designing electronic and photonic devices from the zero band dispersion.
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Submitted 15 July, 2019; v1 submitted 15 April, 2019;
originally announced April 2019.
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Single-particle excitation of core states in epitaxial silicene
Authors:
Chi-Cheng Lee,
Jun Yoshinobu,
Kozo Mukai,
Shinya Yoshimoto,
Hiroaki Ueda,
Rainer Friedlein,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
Recent studies of core-level X-ray photoelectron spectroscopy (XPS) spectra of silicene on ZrB$_2$(0001) were found to be inconsistent with the density of states (DOS) of a planar-like structure that has been proposed as the ground state by density functional theory (DFT). To resolve the discrepancy, a reexamination of the XPS spectra and direct theoretical access of accurate single-particle excit…
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Recent studies of core-level X-ray photoelectron spectroscopy (XPS) spectra of silicene on ZrB$_2$(0001) were found to be inconsistent with the density of states (DOS) of a planar-like structure that has been proposed as the ground state by density functional theory (DFT). To resolve the discrepancy, a reexamination of the XPS spectra and direct theoretical access of accurate single-particle excitation energies are desired. By analyzing the XPS data using symmetric Voigt functions, different binding energies and its sequence of Si $2p$ orbitals can be assigned from previously reported ones where asymmetric pseudo-Voigt functions are adopted. Theoretically, we have adopted an approach developed very recently, which follows the sophisticated $Δ$ self-consistent field ($Δ$SCF) methods, to study the single-particle excitation of core states. In the calculations, each single-particle energy and the renormalized core-hole charge density are calculated straightforwardly via two SCF calculations. By comparing the results, the theoretical core-level absolute binding energies including the splitting due to spin-orbit coupling are in good agreement with the observed high-resolution XPS spectra. The good agreement not only resolves the puzzling discrepancy between experiment and theory (DOS) but also advocates the success of DFT in describing many-body interactions of electrons at the surface.
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Submitted 3 March, 2017; v1 submitted 10 October, 2016;
originally announced October 2016.
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Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Rainer Friedlein,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The origin of the large-scale stripe pattern of epitaxial silicene on the ZrB$_2$(0001) surface observed by scanning tunneling microscope experiments is revealed by first-principles calculations. Without stripes, the ($\sqrt{3}\times\sqrt{3}$)-reconstructed, one-atom-thick Si layer is found to exhibit a "zero-frequency" phonon instability at the $M$ point. In order to avoid a divergent response, t…
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The origin of the large-scale stripe pattern of epitaxial silicene on the ZrB$_2$(0001) surface observed by scanning tunneling microscope experiments is revealed by first-principles calculations. Without stripes, the ($\sqrt{3}\times\sqrt{3}$)-reconstructed, one-atom-thick Si layer is found to exhibit a "zero-frequency" phonon instability at the $M$ point. In order to avoid a divergent response, the relevant phonon mode triggers the spontaneous formation of a new phase with a particular stripe pattern offering a way to lower both the atomic surface density and the total energy of silicene on the particular substrate. The observed mechanism is a way for the system to handle epitaxial strain and may therefore be more common in two-dimensional epitaxial materials exhibiting a small lattice mismatch with the substrate.
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Submitted 11 August, 2014;
originally announced August 2014.
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Band structure of silicene on the zirconium diboride (0001) thin film surface - convergence of experiment and calculations in the one-Si-atom Brillouin zone
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki,
Rainer Friedlein
Abstract:
So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB$_2$(0001) surface and its band structure. In particular, by representing the band structure in a large Brillou…
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So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB$_2$(0001) surface and its band structure. In particular, by representing the band structure in a large Brillouin zone associated with a single Si atom, it is found that the imaginary part of the one-particle Green's function follows the spectral weight observed in ARPES spectra. By additionally varying the in-plane lattice constant, the results of density functional theory calculations and ARPES data obtained in a wide energy range converge into the "planar-like" phase and provide the orbital character of electronic states in the vicinity of the Fermi level. It is anticipated that the choice of a smaller commensurate unit cell for the representation of the electronic structure will be useful for the study of epitaxial two-dimensional materials on various substrates in general.
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Submitted 10 July, 2014;
originally announced July 2014.
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Diverse forms of $σ$ bonding in two-dimensional Si allotropes: Nematic orbitals in the $MoS_2$ structure
Authors:
Florian Gimbert,
Chi-Cheng Lee,
Rainer Friedlein,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si…
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The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si $sp^2$ orbitals realizes bonding with a 6-fold coordination of the inner Si atoms of the layer. The identification of these nematic orbitals advocates diverse Si bonding configurations different from those of C atoms.
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Submitted 31 December, 2013;
originally announced January 2014.
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Competing magnetism in $π$ electrons in graphene with a single carbon vacancy
Authors:
Chi-Cheng Lee,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
One intriguing finding in graphene is the vacancy-induced magnetism that highlights the interesting interaction between local magnetic moments and conduction electrons. Within density functional theory, the current understanding of the ground state is that a Stoner instability gives rise to ferromagnetism of $π$ electrons aligned with the localized moment of a $σ$ dangling bond and the induced…
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One intriguing finding in graphene is the vacancy-induced magnetism that highlights the interesting interaction between local magnetic moments and conduction electrons. Within density functional theory, the current understanding of the ground state is that a Stoner instability gives rise to ferromagnetism of $π$ electrons aligned with the localized moment of a $σ$ dangling bond and the induced $π$ magnetic moments vanish at low vacancy concentrations. However, the observed Kondo effect suggests that $π$ electrons around the vacancy should antiferromagnetically couple to the local moment and carry non-vanishing moments. Here we propose that a phase possessing both significant out-of-plane displacements and $π$ bands with antiferromagnetic coupling to the localized $σ$ moment is the ground state. With the features we provide, it is possible for spin-resolved STM, STS, and ARPES measurements to verify the newly proposed phase.
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Submitted 9 November, 2013; v1 submitted 4 November, 2013;
originally announced November 2013.
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First-principles study on competing phases of silicene: Effect of substrate and strain
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Rainer Friedlein,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB$_2$(0001) surface, has been studied by first-principles calculations. A particular ($\sqrt{3}\times\sqrt{3}$)-reconstructed structural modification was found to be stable on the ZrB$_2$(0001) surface under epitaxial conditions. In contrast to the planar and buck…
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The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB$_2$(0001) surface, has been studied by first-principles calculations. A particular ($\sqrt{3}\times\sqrt{3}$)-reconstructed structural modification was found to be stable on the ZrB$_2$(0001) surface under epitaxial conditions. In contrast to the planar and buckled forms of free-standing silicene, in this "planar-like" phase, all but one of the Si atoms per hexagon reside in a single plane. While without substrate, for a wide range of strain, this phase is energetically less favorable than the buckled one, it is calculated to represent the ground state on the ZrB$_2$(0001) surface. The atomic positions are found to be determined by the interactions with the nearest neighbor Zr atoms competing with Si-Si bonding interactions provided by the constraint of the honeycomb lattice.
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Submitted 21 September, 2013; v1 submitted 3 July, 2013;
originally announced July 2013.
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Unfolding method for the first-principles LCAO electronic structure calculations
Authors:
Chi-Cheng Lee,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
Unfolding the band structure of a supercell to a normal cell enables us to investigate how symmetry breakers such as surfaces and impurities perturb the band structure of the normal cell. We generalize the unfolding method, originally developed based on Wannier functions, to the linear combination of atomic orbitals (LCAO) method, and present a general formula to calculate the unfolded spectral we…
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Unfolding the band structure of a supercell to a normal cell enables us to investigate how symmetry breakers such as surfaces and impurities perturb the band structure of the normal cell. We generalize the unfolding method, originally developed based on Wannier functions, to the linear combination of atomic orbitals (LCAO) method, and present a general formula to calculate the unfolded spectral weight. The LCAO basis set is ideal for the unfolding method because of the invariance that basis functions allocated to each atomic species are invariant regardless of existence of surface and impurity. The unfolded spectral weight is well defined by the property of the LCAO basis functions. In exchange for the property, the non-orthogonality of the LCAO basis functions has to be taken into account. We show how the non-orthogonality can be properly incorporated in the general formula. As an illustration of the method, we calculate the dispersive quantized spectral weight of ZrB2 slab and show strong spectral broadening in the out-of-plane direction, demonstrating the usefulness of the unfolding method.
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Submitted 17 May, 2013; v1 submitted 20 November, 2012;
originally announced November 2012.
