-
Positive Terahertz Photoconductivity in CdHgTe Under Hydrostatic Pressure
Authors:
Ivan Yahniuk,
Dmitriy A. Kozlov,
Mariya D. Moldavskaya,
Leonid E. Golub,
Vasily V. Bel'kov,
Ivan A. Dmitriev,
Sergey S. Krishtopenko,
Frederic Teppe,
Yurii Ivonyak,
Artem Bercha,
Grzegorz Cywiński,
Wojciech Knap,
Sergey D. Ganichev
Abstract:
Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the interband activation mechanism specific for undoped narrow-gap semiconductors and semimetals. Applying intense terahertz radiation, we observed that the photocondu…
▽ More
Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the interband activation mechanism specific for undoped narrow-gap semiconductors and semimetals. Applying intense terahertz radiation, we observed that the photoconductivity saturates at high intensities, which was found to be caused by absorption bleaching. Both the magnitude of the photoconductivity and the saturation intensity are shown to exhibit an exponential dependence on the hydrostatic pressure. We show that this is a consequence of the fact that both phenomena are controlled by the ratio of energy and momentum relaxation times.
△ Less
Submitted 11 April, 2025;
originally announced April 2025.
-
Temperature and Electron Concentration Dependences of 1/f Noise in Hg$_{1-x}$Cd$_x$Te -- Evidence for a Mobility Fluctuations Mechanism
Authors:
Adil Rehman,
Volodymyr Petriakov,
Ivan Yahniuk,
Aleksandr Kazakov,
Iwona Rogalska,
Jakub Grendysa,
Michał Marchewka,
Maciej Haras,
Tomasz Wojtowicz,
Grzegorz Cywiński,
Wojciech Knap,
Sergey Rumyantsev
Abstract:
Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material noise properties. In this work, we investigated the low-frequency 1/f noise…
▽ More
Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg$_{1-x}$Cd$_x$Te are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.
△ Less
Submitted 31 October, 2024;
originally announced October 2024.
-
Terahertz and gigahertz magneto-ratchets in graphene-based 2D metamaterials
Authors:
Marcel Hild,
Erwin Mönch,
Leonid E. Golub,
Ivan A. Dmitriev,
Ivan Yahniuk,
Katharina Amann,
Julia Amann,
Jonathan Eroms,
Jörg Wunderlich,
Dieter Weiss,
Christophe Consejo,
Cedric Bray,
Kenneth Maussang,
Frederic Teppe,
Joanna Gumenjuk-Sichevska,
Kenji Watanabe,
Takashi Taniguchi,
Sergey D. Ganichev
Abstract:
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet c…
▽ More
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet current at zero magnetic field by orders of magnitude. The oscillations are shown to be related to the Shubnikov-de Haas effect. In addition to the giant ratchet current oscillations we detect resonant ratchet currents caused by the cyclotron and electron spin resonances. The results are well described by the developed theory considering the magneto-ratchet effect caused by the interplay of the near-field radiation and the nonuniform periodic electrostatic potential of the metamaterial controlled by the gate voltages.
△ Less
Submitted 22 July, 2024;
originally announced July 2024.
-
Circular THz ratchets in a 2D-modulated Dirac system
Authors:
M. Hild,
I. Yahniuk,
L. E. Golub,
J. Amann,
J. Eroms,
D. Weiss,
K. Watanabe,
T. Taniguchi,
S. D. Ganichev
Abstract:
We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose directio…
▽ More
We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation.
△ Less
Submitted 27 February, 2024;
originally announced February 2024.
-
Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
Authors:
I. Yahniuk,
M. Hild,
L. E. Golub,
J. Amann,
J. Eroms,
D. Weiss,
Wun-Hao Kang,
Ming-Hao Liu,
K. Watanabe,
T. Taniguchi,
S. D. Ganichev
Abstract:
We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the…
▽ More
We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the combined action of a spatially periodic in-plane electrostatic potential and a periodically modulated radiation electric field caused by near-field diffraction. The magnitude and direction of the ratchet current are shown to be controlled by voltages applied to both back and patterned gates, which change the lateral asymmetry, carrier type and density. The phenomenological and microscopic theories of ratchet effects in graphene-based 2D metamaterials are developed. The experimental data are discussed in the light of the theory based on the solution of the Boltzmann kinetic equation and the calculated electrostatic potential profile. The theory describes well all the experimental results and shows that the observed ratchet current consists of the Seebeck thermoratchet contribution as well as the linear contribution, which is sensitive to the orientation of the radiation electric field vector with respect to the triangles.
△ Less
Submitted 6 February, 2024;
originally announced February 2024.
-
Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems
Authors:
Erwin Mönch,
Sophia Schweiss,
Ivan Yahniuk,
Maxim L. Savchenko,
Ivan A. Dmitriev,
Alexey Shuvaev,
Andrei Pimenov,
Dieter Schuh,
Dominique Bougeard,
Sergey D. Ganichev
Abstract:
Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polariti…
▽ More
Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polarities of magnetic field increases with lowering power, but, nevertheless, remains substantially lower than expected from conventional theory assuming interaction of the plane electromagnetic wave with the uniform 2DES. Our analysis shows that all data can be well described by the nonlinear CR-enhanced electron gas heating in both CRA and CRI regimes. This description, however, requires a source of anomalous absorption of radiation in the CRI regime. It can stem from evanescent electromagnetic fields originating from the near-field diffraction within or in the vicinity of the quantum well hosting the 2DES.
△ Less
Submitted 9 November, 2023;
originally announced November 2023.
-
Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
Authors:
Erwin Mönch,
Stefan Hubmann,
Ivan Yahniuk,
Sophia Schweiss,
Vasily V. Bel'kov,
Leonid E. Golub,
Robin Huber,
Jonathan Eroms,
Kenji Watanabe,
Takashi Taniguchi,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be…
▽ More
We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be controllably varied by changing the bias voltages applied to individual dual grating subgates and the back gate. The current consists of contributions insensitive to the radiation's polarization state, defined by the orientation of the radiation electric field vector with respect to the dual grating gate metal stripes, and the circular ratchet sensitive to the radiation helicity. We show that intense terahertz radiation results in a nonlinear intensity dependence caused by electron gas heating. At room temperature the ratchet current saturates at high intensities of the order of hundreds to several hundreds of kWcm$^{-2}$. At $T = 4 {\rm K}$, the nonlinearity manifests itself at intensities that are one or two orders of magnitude lower, moreover, the photoresponse exhibits a complex dependence on the intensity, including a saturation and even a change of sign with increasing intensity. This complexity is attributed to the interplay of the Seebeck ratchet and the dynamic carrier density redistribution, which feature different intensity dependencies and a nonlinear behavior of the sample's conductivity induced by electron gas heating. Our study demonstrates that graphene-based asymmetric dual grating gate devices can be used as terahertz detectors at room temperature over a wide dynamic range, spanning many orders of magnitude of terahertz radiation power. Therefore, their integration together with current-driven read-out electronics is attractive for the operation with high-power pulsed sources.
△ Less
Submitted 27 June, 2023;
originally announced June 2023.
-
Temperature Dependent Zero-Field Splittings in Graphene
Authors:
C. Bray,
K. Maussang,
C. Consejo,
J. A. Delgado-Notario,
S. S. Krishtopenko,
I. Yahniuk,
S. Gebert,
S. Ruffenach,
K. Dinar,
E. Moench,
K. Indykiewicz,
B. Jouault,
J. Torres,
Y. M. Meziani,
W. Knap,
A. Yurgens,
S. D. Ganichev,
F. Teppe
Abstract:
Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupl…
▽ More
Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.
△ Less
Submitted 23 December, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
-
Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vassily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by e…
▽ More
We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by electron-electron interaction: the plasmonic splitting of the resonance due to long-range Coulomb coupling and the partial suppression of its second harmonic due to fast interparticle collisions. We develop a theory which perfectly fits our data. We argue that the ratchet current is generated in the hydrodynamic regime of non-ideal electron liquid.
△ Less
Submitted 17 August, 2022;
originally announced August 2022.
-
THz ratchet effect in HgTe interdigitated structures
Authors:
I. Yahniuk,
G. V. Budkin,
A. Kazakov,
M. Otteneder,
J. Ziegler,
D. Weiss,
N. N. Mikhailov,
S. A. Dvoretskii,
T. Wojciechowski,
V. V. Bel'kov,
W. Knap,
S. D. Ganichev
Abstract:
The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band str…
▽ More
The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, sweeping the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications.
△ Less
Submitted 28 February, 2022;
originally announced February 2022.
-
Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vasily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as…
▽ More
We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime.
△ Less
Submitted 17 November, 2021;
originally announced November 2021.
-
HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures
Authors:
I. Yahniuk,
A. Kazakov,
B. Jouault,
S. S. Krishtopenko,
S. Kret,
G. Grabecki,
G. Cywiński,
N. N. Mikhailov,
S. A. Dvoretskii,
J. Przybytek,
V. I. Gavrilenko,
F. Teppe,
T. Dietl,
W. Knap
Abstract:
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of t…
▽ More
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of the magnetoresistance of different of HgTe quantum wells as a function temperature and magnetic field, determining the critical magnetic field $B_c$. We demonstrate that for QWs of specific width $B_c$ becomes low enough to grant observation of remarkably wide QHE plateaus at the filling factor ${v=-1}$ (holes) in relaxed cryomagnetic conditions: while using commercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvin provided by ${^4He}$ liquid system only. Band structure calculations allow us to explain qualitatively observed phenomena due to the interplay between light holes and heavy holes energy sub-bands (side maxima of the valence band). Our work clearly shows that the peculiar band structure properties of HgTe QWs with massless Dirac fermions make them an ideal platform for developing metrological devices with relaxed cryomagnetic conditions.
△ Less
Submitted 15 November, 2021;
originally announced November 2021.
-
Observation of terahertz-induced magnetooscillations in graphene
Authors:
Erwin Mönch,
Denis A. Bandurin,
Ivan A. Dmitriev,
Isabelle Y. Phinney,
Ivan Yahniuk,
Takashi Taniguchi,
Kenji Watanabe,
Pablo Jarillo-Herrero,
Sergey D. Ganichev
Abstract:
When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular momentum conservation. Here we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate t…
▽ More
When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular momentum conservation. Here we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate the emergence of a pronounced THz-driven photoresponse, which exhibits low-field magnetooscillations governed by the ratio of the frequency of the incoming radiation and the quasiclassical cyclotron frequency. We analyze the modifications of generated photovoltage with the radiation frequency and carrier density and demonstrate that the observed photoresponse shares a common origin with microwave-induced resistance oscillations previously observed in GaAs-based heterostructures, yet in graphene, it appears at much higher frequencies and persists above liquid nitrogen temperatures. Our observations expand the family of radiation-driven phenomena in graphene and offer potential for the development of novel optoelectronic devices.
△ Less
Submitted 25 May, 2020; v1 submitted 3 May, 2020;
originally announced May 2020.
-
Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te
Authors:
M. Otteneder,
D. Sacré,
I. Yahniuk,
G. V. Budkin,
K. Diendorfer,
D. A. Kozlov,
I. A. Dmitriev,
N. N. Mikhailov,
S. A. Dvoretsky,
S. A. Tarasenko,
V. V. Bel'kov,
W. Knap,
S. D. Ganichev
Abstract:
We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case t…
▽ More
We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.
△ Less
Submitted 13 January, 2020;
originally announced January 2020.
-
Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films
Authors:
S. Hubmann,
G. V. Budkin,
M. Otteneder,
D. But,
D. Sacré,
I. Yahniuk,
K. Diendorfer,
V. V. Bel'kov,
D. A. Kozlov,
N. N. Mikhailov,
S. A. Dvoretsky,
V. S. Varavin,
V. G. Remesnik,
S. A. Tarasenko,
W. Knap,
S. D. Ganichev
Abstract:
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende…
▽ More
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.
△ Less
Submitted 5 November, 2019;
originally announced November 2019.
-
Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
Authors:
Ivan Yahniuk,
Sergey S. Krishtopenko,
Grzegorz Grabecki,
Benoit Jouault,
Christophe Consejo,
Wilfried Desrat,
Magdalena Majewicz,
Alexander M. Kadykov,
Kirill E. Spirin,
Vladimir I. Gavrilenko,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Dmytro B. But,
Frederic Teppe,
Jerzy Wróbel,
Grzegorz Cywiński,
1 Sławomir Kret,
Tomasz Dietl,
Wojciech Knap
Abstract:
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to…
▽ More
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.
△ Less
Submitted 17 October, 2018;
originally announced October 2018.
-
Pressure and temperature driven phase transitions in HgTe quantum wells
Authors:
S. S. Krishtopenko,
I. Yahniuk,
D. B. But,
V. I. Gavrilenko,
W. Knap,
F. Teppe
Abstract:
We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning…
▽ More
We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.
△ Less
Submitted 17 October, 2016; v1 submitted 11 July, 2016;
originally announced July 2016.
