Showing 1–50 of 1,009 results for author: Xu, X

Giant elastoresistance in magic-angle twisted bilayer graphene

Authors: Xuetao Ma, Zhaoyu Liu, Jiaqi Cai, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Jiun-Haw Chu, Matthew Yankowitz

Abstract: Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (… ▽ More Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moiré material. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Comments: 21 pages, 16 figures

Recent progress on electron- and magnon-mediated torques

Authors: Jia-Min Lai, Bingyue Bian, Zhonghai Yu, Kaiwei Guo, Yajing Zhang, Pengnan Zhao, Xiaoqian Zhang, Chunyang Tang, Jiasen Cao, Zhiyong Quan, Fei Wang, Xiaohong Xu

Abstract: The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms o… ▽ More The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies. △ Less

Submitted 14 May, 2025; originally announced May 2025.

Comments: 37 pages, 14 figures

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

Authors: Xin Li, Yu Yun, Guodong Ren, Arashdeep Singh Thind, Amit Kumar Shah, Rohan Mishra, Xiaoshan Xu

Abstract: The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The… ▽ More The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The selection of two interface types, related by a 90 deg rotation of in-plane epitaxial relations and featured by disordered and hybridized reconstructions respectively, can be achieved by growth conditions, stacking sequences, and spinel compositions. While the disordered type suppresses the primary K3 structure distortion and ferroelectricity in hexagonal ferrites, the hybridized type is more coherent with the distortion with minimal suppression. This tunable interfacial structure provides critical insight on controlling interfacial clamping and may offer a solution for the long-standing problem of practical critical thickness in improper ferroelectrics. △ Less

Submitted 8 May, 2025; originally announced May 2025.

Giant Tunneling Magnetoresistance in Graphene/$h$-BN Based van der Waals Magnetic Tunnel Junctions via 3$d$ Transition Metal Intercalation

Authors: Zhi Yan, Jianhua Xiao, Xujin Zhang, Cheng Fang, Xiaohong Xu

Abstract: Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with $h$-BN barrier layer. First-principles calculations reveal that in… ▽ More Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with $h$-BN barrier layer. First-principles calculations reveal that intercalation not only stabilizes uniform atomic dispersion via steric hindrance but also induces robust ferromagnetism in graphene. Manganese- and vanadium-intercalated systems (Mn-Gr and V-Gr) exhibit exceptional spintronic performance, with tunneling magnetoresistance (TMR) showing a pronounced odd-even oscillation as a function of barrier thickness. A giant TMR of $4.35 \times 10^8\,\%$ is achieved in the Mn-Gr system with a monolayer barrier $h$ -BN ($n=1$), while V-Gr reaches a maximum TMR of $1.86 \times 10^5\,\%$ for a trilayer barrier ($n=3$). Moreover, biaxial strain further enhances the TMR to $10^9\,\%$ and $10^7\,\%$ in Mn-Gr and V-Gr systems, respectively. The devices also exhibit perfect spin filtering and pronounced negative differential resistance, offering new opportunities for high-performance spintronic and memory applications based on 2D van der Waals heterostructures. △ Less

Submitted 7 May, 2025; originally announced May 2025.

Comments: 13 pages, 8 figures

Room-temperature magnetoelectric coupling in strontium titanate

Authors: Zhen Yang, Cheng Ma, Mengqin Wang, Yuzhou He, Yuansha Chen, Fengxia Hu, Ye Yuan, Shuai Xu, Chen Ge, Er-jia Guo, Can Wang, Xiulai Xu, Guozhen Yang, Qinghua Zhang, Kui-juan Jin

Abstract: Magnetoelectric (ME) multiferroics enable efficient interconversion of electrical and magnetic signals, offering pathways toward substantial reduction of power consumption in next-generation computing and information technologies. However, despite decades of research, the persistence of ME coupling at room-temperature, an indispensable feature for practical applications, remains exceedingly rare i… ▽ More Magnetoelectric (ME) multiferroics enable efficient interconversion of electrical and magnetic signals, offering pathways toward substantial reduction of power consumption in next-generation computing and information technologies. However, despite decades of research, the persistence of ME coupling at room-temperature, an indispensable feature for practical applications, remains exceedingly rare in single-phase materials, due to symmetry constraints imposed by magnetic point groups and competing electronic requirements for ferroelectricity and magnetism. Here we report the coexistence of ferroelectricity and ferromagnetism at 780 K and a strong ME coupling with a converse ME coupling coefficient up to 498 ps/m at room-temperature in strontium titanate by dedicated vacancy engineering. The asymmetric distribution of oxygen vacancies surrounding titanium vacancies enables atomic displacement of titanium and charge injection, providing joint origin for ferroelectricity and ferromagnetism, as confirmed by atomic-scale structural analysis and first-principles calculations. The mechanism of ME coupling is offered as the hopping of oxygen vacancies under electric fields, which leads to the rearrangement of electronic configuration. Our work opens an avenue for designing multiferroics, overcoming the long-standing scarcity of room-temperature single-phase multiferroics. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Comments: 20 pages,4 figures

Spectroscopic evidence for possible quantum spin liquid behavior in a two-dimensional Mott insulator

Authors: Haiyang Chen, Fo-Hong Wang, Qiang Gao, Xue-Jian Gao, Zhenhua Chen, Yaobo Huang, Kam Tuen Law, Xiao Yan Xu, Peng Chen

Abstract: Mott insulators with localized magnetic moments will exhibit a quantum spin liquid (QSL) state when the quantum fluctuations are strong enough to suppress the ordering of the spins. Such an entangled state will give rise to collective excitations, in which spin and charge information are carried separately. Our angle-resolved photoemission spectroscopy (ARPES) measurements on single-layer 1T-TaS2… ▽ More Mott insulators with localized magnetic moments will exhibit a quantum spin liquid (QSL) state when the quantum fluctuations are strong enough to suppress the ordering of the spins. Such an entangled state will give rise to collective excitations, in which spin and charge information are carried separately. Our angle-resolved photoemission spectroscopy (ARPES) measurements on single-layer 1T-TaS2 show a flat band around the zone center and a gap opening of about 200 meV in the low temperature, indicating 2D Mott insulating nature in the system. This flat band is dispersionless in momentum space but shows anomalously broad width around the zone center and the spectral weight decays rapidly as momentum increases. The observation is described as a spectral continuum from electron fractionalization, corroborated by a low energy effective model.The intensity of the flat band is reduced by surface doping with magnetic adatoms and the gap is closing, a result from the interaction between spin impurities coupled with spinons and the chargons, which gives rise to a charge redistribution. Doping with nonmagnetic impurities behaves differently as the chemical potential shift dominates. These findings provide insight into the QSL states of strongly correlated electrons on 2D triangular lattices. △ Less

Submitted 16 April, 2025; originally announced April 2025.

Journal ref: Phys. Rev. Lett. 134, 066402 (2025)

NMR study of supersolid phases in the triangular-lattice antiferromagnet Na2BaCo(PO4)2

Authors: Xiaoyu Xu, Zhanlong Wu, Ying Chen, Qing Huang, Ze Hu, Xinyu Shi, Kefan Du, Shuo Li, Rui Bian, Rong Yu, Yi Cui, Haidong Zhou, Weiqiang Yu

Abstract: We report ultra-low-temperature $^{23}$Na NMR measurements on the Ising triangular lattice antiferromagnet Na$_2$BaCo(PO$_4$)$_2$, which precisely resolve the phase diagram under magnetic field applied along the crystalline $c$ axis. With increasing field, the NMR spectra resolve three ordered phases with distinct spin configurations: the Y, up-up-down (UUD), and V phases. The spin-lattice relaxat… ▽ More We report ultra-low-temperature $^{23}$Na NMR measurements on the Ising triangular lattice antiferromagnet Na$_2$BaCo(PO$_4$)$_2$, which precisely resolve the phase diagram under magnetic field applied along the crystalline $c$ axis. With increasing field, the NMR spectra resolve three ordered phases with distinct spin configurations: the Y, up-up-down (UUD), and V phases. The spin-lattice relaxation rate $1/T_1$ data demonstrate gapless excitations in the Y and V phases, strongly supporting their supersolid nature. However, the phase transitions from the UUD phase to the two supersolid phases exhibit dramatically different behaviors upon cooling. Prior to entering the Y phase, $1/T_1$ identifies a gapless regime within the UUD phase, suggesting a Berezinskii-Kosterlitz-Thouless phase above a second-order phase transition. In contrast, the coexistence of the UUD and V phases observed in our experiments provides direct evidence of a first-order phase transition between these phases. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Comments: 5 pages, 4 figures

Gate-tunable hot electron extraction in a two-dimensional semiconductor heterojunction

Authors: Chenran Xu, Chen Xu, Jichen Zhou, Zhexu Shan, Wenjian Su, Wenbing Li, Xingqi Xu, Kenji Watanabe, Takashi Taniguchi, Shiyao Zhu, Da-Wei Wang, Yanhao Tang

Abstract: Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond the Shockley Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of… ▽ More Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond the Shockley Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe2 to WS2. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe2 can boost hot-electron extraction density (n_ET) by factor up to several tens. Such enhancement arises from interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, n_ET can be further enhanced by reducing the conduction band offset with external electric field. Our results provide in-depth insights into design of HCSCs with electrostatic strategies. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Comments: accepted by Nano Letters

Roadmap for Photonics with 2D Materials

Authors: F. Javier García de Abajo, D. N. Basov, Frank H. L. Koppens, Lorenzo Orsini, Matteo Ceccanti, Sebastián Castilla, Lorenzo Cavicchi, Marco Polini, P. A. D. Gonçalves, A. T. Costa, N. M. R. Peres, N. Asger Mortensen, Sathwik Bharadwaj, Zubin Jacob, P. J. Schuck, A. N. Pasupathy, Milan Delor, M. K. Liu, Aitor Mugarza, Pablo Merino, Marc G. Cuxart, Emigdio Chávez-Angel, Martin Svec, Luiz H. G. Tizei, Florian Dirnberger , et al. (123 additional authors not shown)

Abstract: Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combinat… ▽ More Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners. △ Less

Submitted 14 April, 2025; v1 submitted 6 April, 2025; originally announced April 2025.

Comments: 199 pages, 42 figures, 1154 references

Antiferroelectricity with metastable polar state from Kittel model

Authors: Amit Kumar Shah, Xin Li, Guodong Ren, Yu Yun, Rohan Mishra, Xiaoshan Xu

Abstract: We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing the comprehensive phase diagram including the antiferroelectric, ferroelectric, and paraelectric phases in the parameter space, we identified an AFE phase with stable antipolar states and metastable polar state (SAMP) due… ▽ More We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing the comprehensive phase diagram including the antiferroelectric, ferroelectric, and paraelectric phases in the parameter space, we identified an AFE phase with stable antipolar states and metastable polar state (SAMP) due to the weak coupling between sublattices. We found that the metastability of the polar state in SAMP phase could lead to apparent remanent polarization, depending on the measurement timescale. This explains the observed ferroelectric behavior of orthorhombic hafnia, which is predicted to be antipolar by density functional theories. △ Less

Submitted 6 May, 2025; v1 submitted 5 April, 2025; originally announced April 2025.

Decoupling Coherent and Particle-like Phonon Transport through Bonding Hierarchy in Soft Superionic Crystals

Authors: Wenjie Xiong, Hao Huang, Yu Wu, Xinji Xu, Geng Li, Zonglin Gu, Shuming Zeng

Abstract: Within the framework of the unified theory thermal transport model, the competing contributions of coherent and incoherent terms create a trade-off relationship, posing substantial challenges to achieving a reduction in overall $\rm κ_L$. In this work, we theoretically demonstrate that the superionic crystals X$_6$Re$_6$S$_8$I$_8$ (X = Rb, Cs) exhibit ultralow glass-like and particle-like thermal… ▽ More Within the framework of the unified theory thermal transport model, the competing contributions of coherent and incoherent terms create a trade-off relationship, posing substantial challenges to achieving a reduction in overall $\rm κ_L$. In this work, we theoretically demonstrate that the superionic crystals X$_6$Re$_6$S$_8$I$_8$ (X = Rb, Cs) exhibit ultralow glass-like and particle-like thermal conductivities. The weak interactions between free alkali metal ions X$^+$ (X = Rb, Cs) and I$^-$ anions induce pronounced lattice anharmonicity, which enhances phonon scattering and suppresses group velocities, thereby reducing the particle-like thermal conductivity ($\rm κ_p$). Concurrently, the significant bonding heterogeneity within the [Re$_6$S$_8$I$_6$]$^{4-}$ clusters promotes phonon dispersion flattening and low-frequency phonon localization. The resulting discretized phonon flat bands substantially diminish the glass-like thermal conductivity ($\rm κ_c$). At room temperature, the total $\rm κ_L$ of X$_6$Re$_6$S$_8$I$_8$ (X = Rb, Cs) falls below 0.2 Wm$^{-1}$K$^{-1}$. Furthermore, the bonding characteristics between X$^+$ and I$^{-1}$ anions induce an anomalous cation mass-independent stiffening of low-frequency phonon branches in this system, resulting in counterintuitive thermal transport behavior. This work elucidates fundamental mechanisms governing heat transfer in ultralow $\rm κ_L$ materials and establishes novel pathways for transcending conventional thermal conductivity limitations. △ Less

Submitted 2 April, 2025; originally announced April 2025.

Topological Phase Transition and Geometrical Frustration in Fourier Photonic Simulator

Authors: Yuxuan Sun, Weiru Fan, Xingqi Xu, Da-Wei Wang, Hai-Qing Lin

Abstract: XY models with continuous spin orientation play a pivotal role in understanding topological phase transitions and emergent frustration phenomena, such as superconducting and superfluid phase transitions. However, the complex energy landscapes arising from frustrated lattice geometries and competing spin interactions make these models computationally intractable. To address this challenge, we desig… ▽ More XY models with continuous spin orientation play a pivotal role in understanding topological phase transitions and emergent frustration phenomena, such as superconducting and superfluid phase transitions. However, the complex energy landscapes arising from frustrated lattice geometries and competing spin interactions make these models computationally intractable. To address this challenge, we design a programmable photonic spin simulator capable of emulating XY models with tunable lattice geometries and spin couplings, allowing systematic exploration of their statistical behavior. We experimentally observe the Berezinskii-Kosterlitz-Thouless (BKT) transition in a square-lattice XY model with nearest-neighbor interactions, accurately determining its critical temperature. Expanding to frustrated systems, we implement the approach in triangular and honeycomb lattices, uncovering sophisticated phase transitions and frustration effects, which are consistent with theoretical predictions. This versatile platform opens avenues for probing unexplored XY model phenomena across diverse geometries and interaction schemes, with potential applications in solving complex optimization and machine learning problems. △ Less

Submitted 1 April, 2025; v1 submitted 31 March, 2025; originally announced March 2025.

Optical control of orbital magnetism in magic angle twisted bilayer graphene

Authors: Eylon Persky, Minhao He, Jiaqi Cai, Takashi Taniguchi, Kenji Watanabe, Xiaodong Xu, Aharon Kapitulnik

Abstract: Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associate… ▽ More Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associated anomalous Hall effects (AHE) in a magic angle twisted bilayer graphene (MATBG) on monolayer WSe$_2$ device. We show that the properties of the AHE, such as hysteresis and amplitude, can be controlled by light near integer moiré fillings, where spontaneous ferromagnetism exists. By modulating the light helicity, we observe periodic modulation of the transverse resistance in a wide range of fillings, indicating light induced orbital magnetization through a large inverse Faraday effect. At the transition between metallic and AHE regimes, we also reveal large and random switching of the Hall resistivity, which are attributed to optical control of percolating cluster of magnetic domains. Our results open the door to optical manipulation of correlation and topology in MATBG and related structures. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 16 pages, 9 figures

Amplifying solid-state high harmonic generations with momentum k-gaps in band structure engineering

Authors: Yiming Pan, Danni Chen, Xiaoxi Xu, Zhaopin Chen, Huaiqiang Wang

Abstract: We propose a novel amplification mechanism for high harmonic generation (HHG) in solids by leveraging bandgap engineering with momentum k-gaps. By constructing a simple diatomic lattice featuring balanced, alternating gain and loss profiles, facilitated by an array of four-level systems, we explore the physics of k-gap-amplified Bloch oscillations in the intraband channel of solid-state HHG. Throu… ▽ More We propose a novel amplification mechanism for high harmonic generation (HHG) in solids by leveraging bandgap engineering with momentum k-gaps. By constructing a simple diatomic lattice featuring balanced, alternating gain and loss profiles, facilitated by an array of four-level systems, we explore the physics of k-gap-amplified Bloch oscillations in the intraband channel of solid-state HHG. Through numerical simulations, we elucidate the coexistence of amplification and harmonic radiation processes in a solid. Our finding reveals that advanced bandgap engineering can define k-space optical devices - such as Brillouin cavity, Bloch-Zener oscillator and k-gap amplifier - thereby enabling the coherent manipulation of semiconductor radiation and high harmonic generation in both semiconductor superlattices and artificial materials. Furthermore, we analyze the spectrogram and material realizations required for amplifying solid-state HHG. These results underscore the potential of k-gap band structure engineering to advance coherent light sources at extremely short wavelengths. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 15 pages, 4 figures

Observation of charge to spin conversion in p-orbital InBi alloy

Authors: Gen Li, Ying Zhang, Xiaoguang Xu, Lei Shen, Zheng Feng, Kangkang Meng, Ang Li, Lu Cheng, Kang He, Wei Tan, Yong Wu, Yihong Wu, Yong Jiang

Abstract: High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect limits to d-orbital materials associated with strong spin-orbit coupling, especially heavy metals. However, d-orbital heavy metals with strong spin-orbit coupling results in a short spin diffusion length, which restricts the… ▽ More High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect limits to d-orbital materials associated with strong spin-orbit coupling, especially heavy metals. However, d-orbital heavy metals with strong spin-orbit coupling results in a short spin diffusion length, which restricts the spin transport and accumulation in spintronic devices. Therefore, the conflict between charge-to-spin conversion efficiency and spin transport ability is irreconcilable in d-orbital materials. Here, we report a large charge to spin conversion experimentally observed in the p-orbital In2Bi alloy, exhibiting the coexistence of a large spin Hall angle comparable to heave metal Pt and a long spin diffusion length (4 times that of Pt). First-principles calculations reveal that topological symmetry-protected gap opening near the Fermi level results in large Berry curvature-related spin Hall conductivity. Due to the delocalized nature of p-orbitals and semimetal properties of In2Bi, its spin current can overcome the physical barriers between spin Hall angle and spin diffusion length in d-orbital metals, thereby advancing the development of high-performance spintronic devices. △ Less

Submitted 26 March, 2025; originally announced March 2025.

The role of fluctuations in the nucleation process

Authors: Yuanpeng Deng, Peilin Kang, Xiang Xu, Hui Li, Michele Parrinello

Abstract: The emergence upon cooling of an ordered solid phase from a liquid is a remarkable example of self-assembly, which has also major practical relevance. Here, we use a recently developed committor-based enhanced sampling method [Kang et al., Nat. Comput. Sci. 4, 451-460 (2024); Trizio et al., arXiv:2410.17029 (2024)] to explore the crystallization transition in a Lennard-Jones fluid, using Kolmogoro… ▽ More The emergence upon cooling of an ordered solid phase from a liquid is a remarkable example of self-assembly, which has also major practical relevance. Here, we use a recently developed committor-based enhanced sampling method [Kang et al., Nat. Comput. Sci. 4, 451-460 (2024); Trizio et al., arXiv:2410.17029 (2024)] to explore the crystallization transition in a Lennard-Jones fluid, using Kolmogorov's variational principle. In particular, we take advantage of the properties of our sampling method to harness a large number of configurations from the transition state ensemble. From this wealth of data, we achieve precise localization of the transition state region, revealing a nucleation pathway that deviates from idealized spherical growth assumptions. Furthermore, we take advantage of the probabilistic nature of the committor to detect and analyze the fluctuations that lead to nucleation. Our study nuances classical nucleation theory by showing that the growing nucleus has a complex structure, consisting of a solid core surrounded by a disordered interface. We also compute from the Kolmogorov's principle a nucleation rate that is consistent with the experimental results at variance with previous computational estimates. △ Less

Submitted 26 March, 2025; originally announced March 2025.

Anisotropic superconductivity in the quasi-one-dimensional superconductor V$_2$Ga$_5$

Authors: G. Lamura, D. Tay, R. Khasanov, P. Gentile, C. Q. Xu, X. Ke, I. J. Onuorah, P. Bonfà, Xiaofeng Xu, T. Shiroka

Abstract: The intermetallic quasi-one-dimensional binary superconductor V$_2$Ga$_5$ was recently found to exhibit a topologically nontrivial normal state, making it a natural candidate for a topological superconductor (TSC). By combining dc-magnetization, nuclear magnetic resonance (NMR), and muon-spin rotation ({$μ$SR) measurements on high-quality V$_2$Ga$_5$ single crystals, we investigate the electronic… ▽ More The intermetallic quasi-one-dimensional binary superconductor V$_2$Ga$_5$ was recently found to exhibit a topologically nontrivial normal state, making it a natural candidate for a topological superconductor (TSC). By combining dc-magnetization, nuclear magnetic resonance (NMR), and muon-spin rotation ({$μ$SR) measurements on high-quality V$_2$Ga$_5$ single crystals, we investigate the electronic properties of its normal- and superconducting (SC) ground states. NMR measurements in the normal state indicate a strong anisotropy in both the line shifts and the relaxation rates. Such anisotropy persists also in the superconducting state, as shown by the magnetization- and $μ$SR-spectroscopy results. In the latter case, data collected at different temperatures, pressures, and directions of the magnetic field evidence a fully-gapped, strongly anisotropic superconductivity. At the same time, hydrostatic pressure is shown to only lower the $T_c$ value, but not to change the superfluid density nor its temperature dependence. Lastly, we discuss the search for topological signatures in the normal state of V$_2$Ga$_5$, as well as a peak splitting in the FFT of the $μ$SR spectrum, possibly related to an unconventional vortex lattice. Our results suggest that V$_2$Ga$_5$ is a novel system, whose anisotropy plays a key role in determining its unusual electronic properties. △ Less

Submitted 22 March, 2025; originally announced March 2025.

Comments: 14 pages, 11 figures, including Suppl. Information

Journal ref: Scientific Reports 15, 14185 (2025)

Giant Self Spin-Valve Effect in the Kagome Helimagnet

Authors: Xitong Xu, Yonglai Liu, Kesen Zhao, Che-Min Lin, Miao He, Haitian Zhao, Qingqi Zeng, Yubin Hou, Qingyou Lu, Ding-Fu Shao, Shuang Jia, Haifeng Du, Wenjie Meng, Tay-Rong Chang, Zhe Qu

Abstract: Kagome magnets can combine non-trivial band topology and electron correlations, offering a versatile playground for various quantum phenomena. In this work we propose that kagome magnets with frustrated interlayer interactions can intrinsically support a self spin-valve effect, and experimentally confirm this in the kagome helimagnet TmMn$_6$Sn$_6$. Under a magnetic field perpendicular to the heli… ▽ More Kagome magnets can combine non-trivial band topology and electron correlations, offering a versatile playground for various quantum phenomena. In this work we propose that kagome magnets with frustrated interlayer interactions can intrinsically support a self spin-valve effect, and experimentally confirm this in the kagome helimagnet TmMn$_6$Sn$_6$. Under a magnetic field perpendicular to the helical axis, using magnetic force microscopy we observed stripe domains that stack strictly along the helical axis, which we attribute to the stability loss of the kagome helimagnetic state. Such a domain pattern spontaneously mimics the artificial multilayered structure in traditional spin valves, which, combined with the high spin polarization, leads to a giant magnetoresistance (GMR) ratio over 160%. This discovery opens an avenue to realize inherent spin valves in a variety of quantum magnets, and can hold promise in future spintronics. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: Accepted version

Journal ref: Nat. Commun. 16, 2630 (2025)

Engineering robust strain transmission in van der Waals heterostructure devices

Authors: John Cenker, Jordan Fonseca, Mai Nguyen, Chaowei Hu, Daniel G. Chica, Takashi Taniguchi, Kenji Watanabe, Xiaoyang Zhu, Xavier Roy, Jiun-Haw Chu, Xiaodong Xu

Abstract: Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak strain transfer of graphite and hBN, which are standard components of high-qualityvdW devices, poses fundamental challenges for high-strain experiments. Here, we… ▽ More Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak strain transfer of graphite and hBN, which are standard components of high-qualityvdW devices, poses fundamental challenges for high-strain experiments. Here, we investigate strain transmission in less-explored orthorhombic crystals and find robust transmission up to several percent at cryogenic temperatures. We further show that strain can be efficiently transferred through these crystals to other 2D materials in traditional heterostructure devices. Using this capability, we demonstrate in-situ strain and gate control of the optical properties of monolayer WS2 utilizing the high-\k{appa} dielectric insulator Bi2SeO5 as a substrate. These results enable the exploration of combined cryo-strain and gate tuning in a variety of layered systems such as moiré heterostructures, air-sensitive 2D magnets and superconductors, and any gated 2D device. △ Less

Submitted 16 March, 2025; originally announced March 2025.

Comments: To appear in Nano Letters

Observation of High-Temperature Dissipationless Fractional Chern Insulator

Authors: Heonjoon Park, Weijie Li, Chaowei Hu, Christiano Beach, Miguel Gonçalves, Juan Felipe Mendez-Valderrama, Jonah Herzog-Arbeitman, Takashi Taniguchi, Kenji Watanabe, David Cobden, Liang Fu, B. Andrei Bernevig, Nicolas Regnault, Jiun-Haw Chu, Di Xiao, Xiaodong Xu

Abstract: The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$Ω$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we repo… ▽ More The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$Ω$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we report transport measurements of a drastically improved twisted $\text{MoTe}_2$ bilayer device, which exhibits quantized $R_{xy}$ and vanishing $R_{xx}$ for the $-2/3$ state, marking a dissipationless FCI. Contrary to fractional quantum Hall states where the energy gap increases with magnetic field, we find that the thermal activation gap of the observed FCI states decreases rapidly as the magnetic field rises from zero, then plateaus above a few teslas. This observation is attributed to the interplay between spin and charge gaps. Due to the spontaneous ferromagnetism, the spin gap dominates at low field, while the charge gap becomes appreciable once the magnetic field freezes spin fluctuations. For the $-2/3$ state, we estimate the spin and FCI gap of about 55 and 20 K, respectively. Our results provide insights into the energy scale of FCI and offer a pathway for quantum engineering of exotic correlated topological states. △ Less

Submitted 13 March, 2025; originally announced March 2025.

Comments: 27 pages, 4 figures

Fermionic Partial Transpose in the Overlap Matrix Framework for Entanglement Negativity

Authors: Jun Qi Fang, Xiao Yan Xu

Abstract: Over the past two decades, the overlap matrix approach has been developed to compute quantum entanglement in free-fermion systems, particularly to calculate entanglement entropy and entanglement negativity. This method involves the use of partial trace and partial transpose operations within the overlap matrix framework. However, previous studies have only considered the conventional partial trans… ▽ More Over the past two decades, the overlap matrix approach has been developed to compute quantum entanglement in free-fermion systems, particularly to calculate entanglement entropy and entanglement negativity. This method involves the use of partial trace and partial transpose operations within the overlap matrix framework. However, previous studies have only considered the conventional partial transpose in fermionic systems, which does not account for fermionic anticommutation relations. Although the concept of a fermionic partial transpose was introduced in \cite{Shapourian2017prb}, it has not yet been systematically incorporated into the overlap matrix framework. In this paper, we introduce the fermionic partial transpose into the overlap matrix approach, provide a systematic analysis of the validity of partial trace and partial transpose operations, and derive an explicit formula for calculating entanglement negativity in bipartite systems. Additionally, we numerically compute the logarithmic negativity of two lattice models to verify the Gioev-Klich-Widom scaling law. For tripartite geometries, we uncover limitations of the overlap matrix method and demonstrate that the previously reported logarithmic negativity result for a homogeneous one-dimensional chain in a disjoint interval geometry exceeds its theoretical upper bound. Our findings contribute to a deeper understanding of partial trace and partial transpose operations in different representations. △ Less

Submitted 12 March, 2025; v1 submitted 10 March, 2025; originally announced March 2025.

Untwisted and Twisted Rényi Negativities: Toward a Rényi Proxy for Logarithmic Negativity in Fermionic Systems

Authors: Fo-Hong Wang, Xiao Yan Xu

Abstract: Entanglement entropy is a fundamental measure of quantum entanglement for pure states, but for large-scale many-body systems, Rényi entanglement entropy is much more computationally accessible. For mixed states, logarithmic negativity (LN) serves as a widely used entanglement measure, but its direct computation is often intractable, leaving Rényi negativity (RN) as the practical alternative. In fe… ▽ More Entanglement entropy is a fundamental measure of quantum entanglement for pure states, but for large-scale many-body systems, Rényi entanglement entropy is much more computationally accessible. For mixed states, logarithmic negativity (LN) serves as a widely used entanglement measure, but its direct computation is often intractable, leaving Rényi negativity (RN) as the practical alternative. In fermionic systems, RN is further classified into untwisted and twisted types, depending on the definition of the fermionic partial transpose. However, which of these serves as the true Rényi proxy for LN has remained unclear -- until now. In this work, we address this question by developing a robust quantum Monte Carlo (QMC) method to compute both untwisted and twisted RNs, focusing on the rank-4 twisted RN, where non-trivial behavior emerges. We identify and overcome two major challenges: the singularity of the Green's function matrix and the exponentially large variance of RN estimators. Our method is demonstrated in the Hubbard model and the spinless $t$-$V$ model, revealing critical distinctions between untwisted and twisted RNs, as well as between rank-2 and high-rank RNs. Remarkably, we find that the twisted Rényi negativity ratio (RNR) adheres to the area law and decreases monotonically with temperature, in contrast to the untwisted RNR but consistent with prior studies of bosonic systems. This study not only establishes the twisted RNR as a more pertinent Rényi proxy for LN in fermionic systems but also provides comprehensive technical details for the stable and efficient computation of high-rank RNs. Our work lays the foundation for future studies of mixed-state entanglement in large-scale fermionic many-body systems. △ Less

Submitted 10 March, 2025; originally announced March 2025.

Comments: 29 pages, 7 figures

Quantum spin dynamics of the honeycomb magnet K$_2$Co$_2$TeO$_6$ in high magnetic fields

Authors: Patrick Pilch, Laur Peedu, Urmas Nagel, Toomas Rõõm, Changqing Zhu, Yurii Skourski, Xianghan Xu, Robert J. Cava, Zhe Wang

Abstract: We present terahertz spectroscopic measurements of quantum spin dynamics in the honeycomb magnet K$_2$Co$_2$TeO$_6$ as a function of temperature, polarization and in an external magnetic field applied in the honeycomb plane. Magnetic excitations are resolved below the magnetic ordering temperature of $T_\text{N}$ = 12 K. In the applied magnetic field, we reveal characteristic field dependence not… ▽ More We present terahertz spectroscopic measurements of quantum spin dynamics in the honeycomb magnet K$_2$Co$_2$TeO$_6$ as a function of temperature, polarization and in an external magnetic field applied in the honeycomb plane. Magnetic excitations are resolved below the magnetic ordering temperature of $T_\text{N}$ = 12 K. In the applied magnetic field, we reveal characteristic field dependence not only for the magnetic excitations observed at zero field, but also a rich set of modes emerging in finite fields. The observed magnetic excitations exhibit clear dependence on the terahertz polarization, and characteristic features at field-induced phase transitions consistent with our high-field magnetization data. We cannot evidently resolve a continuumlike feature, even when the long-range magnetic order is presumably suppressed in the strong magnetic field, indicating that a Kitaev-type interaction, if existing, is subleading in this compound. △ Less

Submitted 10 March, 2025; originally announced March 2025.

Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials

Authors: Qing Wang, Yuhang Li, Shaofeng Wang, Shuo Cao, Xiulai Xu, Chenjiang Qian

Abstract: Nanophotonic devices with moiré superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer mate… ▽ More Nanophotonic devices with moiré superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer materials raises challenges in the nanofabrication technology, because the growth of upper layer material usually requires a smooth bottom layer without nanostructures. Hereby, we fabricate twisted heterobilayer photonic crystal in the graphite/Si$_3$N$_4$ heterostructure. We use dry transfer method to stack the graphite on top of bottom Si$_3$N$_4$ with pre-etched photonic crystal patterns. Selective dry etching recipes are used to etch two photonic crystal layers individually, which improves the quality and accuracy in alignment. The cavity photonic mode at the visible wavelength $\sim 700$ nm arsing from the moiré site is clearly observed in experiment. These results reveal the experimental diagram of heterobilayer nanophotonic devices and open the way to design flexibility and control of photons in new degrees of freedom. △ Less

Submitted 6 March, 2025; originally announced March 2025.

Pressure-driven superconductivity in the topological insulator GeBi4Te7

Authors: Yalei Huang, Na Zuo, Zheyi Zhang, Chunqiang Xu, Xiangzhuo Xing, Wen-He Jiao, Bin Li, Wei Zhou, Xiaobing Liu, Dong Qian, Xiaofeng Xu

Abstract: The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting… ▽ More The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting state by applying a physical pressure, making them viable candidates to realize so-called topological superconductivity. However, the role of magnetic fluctuations in this pressure-induced superconductivity remains unclear. Here, we report the pressure-induced multiple superconducting phases in the nonmagnetic GeBi4Te7, accompanied by corresponding structural transitions evidenced from the high-pressure Raman scattering. In comparison with other members in this family, we find the superconducting transition temperature of the nonmagnetic subgroup is significantly higher than their magnetic homologues, possibly hinting at the detrimental role played by the magnetic fluctuations in the superconductivity formation, at least in this pseudo-binary chalcogenide family. △ Less

Submitted 5 March, 2025; originally announced March 2025.

Magnetoelectric Control of Helical Light Emission in a Moiré Chern Magnet

Authors: Eric Anderson, Heonjoon Park, Kaijie Yang, Jiaqi Cai, Takashi Taniguchi, Kenji Watanabe, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: Magnetoelectric effects and their coupling to light helicity are important for both fundamental science and applications in sensing, communication, and data storage. Traditional approaches require complex device architectures, involving separate spin-injection, ferromagnetic, and optically active layers. Recently, the emergence of 2D semiconductor moiré superlattices with flat Chern bands and stro… ▽ More Magnetoelectric effects and their coupling to light helicity are important for both fundamental science and applications in sensing, communication, and data storage. Traditional approaches require complex device architectures, involving separate spin-injection, ferromagnetic, and optically active layers. Recently, the emergence of 2D semiconductor moiré superlattices with flat Chern bands and strong light-matter interactions has established a simple yet powerful platform for exploring the coupling between photon, electron, and spin degrees of freedom. Here, we report efficient current control of spontaneous ferromagnetism and associated helicity of light emission in moiré MoTe2 bilayer - a system which hosts a rich variety of topological phases, including newly discovered zero-field fractional Chern insulators. We show that the current control is effective over a wide range of doping of the first moiré Chern band, implying the uniformity of the Berry curvature distribution over the flat band. By setting the system into the anomalous Hall metal phase, a current as small as 10nA is sufficient to switch the magnetic order, a substantial improvement over both conventional spin torque architectures and other moiré systems. The realized current control of ferromagnetism leads to continuous tuning of trion photoluminescence helicity from left to right circular via spin/valley Hall torque at zero magnetic field. Our results pave the way for topological opto-spintronics based on semiconductors with synthetic flat Chern bands. △ Less

Submitted 4 March, 2025; originally announced March 2025.

Comments: 16 pages, 4 figures, plus supplementary material

Hidden States and Dynamics of Fractional Fillings in tMoTe2 Moiré Superlattices

Authors: Yiping Wang, Jeongheon Choe, Eric Anderson, Weijie Li, Julian Ingham, Eric A. Arsenault, Yiliu Li, Xiaodong Hu, Takashi Taniguchi, Kenji Watanabe, Xavier Roy, Dmitri Basov, Di Xiao, Raquel Queiroz, James C. Hone, Xiaodong Xu, X. -Y. Zhu

Abstract: The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional… ▽ More The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional quantum spin Hall (FQSH) states, and non-abelian fractional states. Here we employ transient optical spectroscopy on tMoTe2 to reveal nearly 20 hidden states at fractional fillings that are absent in static optical sensing or transport measurements. A pump pulse selectively excites charge across the correlated or pseudo gaps, leading to the disordering (melting) of correlated states. A probe pulse detects the subsequent melting and recovery dynamics via exciton and trion sensing. Besides the known states, we observe additional fractional fillings between v = 0 and -1 and a large number of states on the electron doping side (v > 0). Most importantly, we observe new states at fractional fillings of the Chern bands at v = -4/3, -3/2, -5/3, -7/3, -5/2, and -8/3. These states are potential candidates for the predicted exotic topological phases. Moreover, we show that melting of correlated states occurs on two distinct time scales, 2-4 ps and 180-270 ps, attributed to electronic and phonon mechanisms, respectively. We discuss the differing dynamics of the electron and hole doped states from the distinct moiré conduction and valence bands. △ Less

Submitted 28 February, 2025; originally announced February 2025.

Comments: 19 pages, 4 figures, 13 extended figures

Phonon anomalies within the polar charge density wave phase of superconductor Mo$_3$Al$_2$C with structural chirality

Authors: Shangfei Wu, Xianghan Xu, Fei-Ting Huang, Turan Birol, Sang-Wook Cheong, Girsh Blumberg

Abstract: We employ polarization-resolved Raman spectroscopy to study the lattice dynamics of the polar charge density wave phase of the superconductor Mo$_3$Al$_2$C with structural chirality. We show the phononic signatures of the charge density wave transition at $T^*$=155K in Mo$_3$Al$_2$C. The detailed temperature dependence of these phonon modes' frequency, half-width-at-half-maximum, and the integrate… ▽ More We employ polarization-resolved Raman spectroscopy to study the lattice dynamics of the polar charge density wave phase of the superconductor Mo$_3$Al$_2$C with structural chirality. We show the phononic signatures of the charge density wave transition at $T^*$=155K in Mo$_3$Al$_2$C. The detailed temperature dependence of these phonon modes' frequency, half-width-at-half-maximum, and the integrated area below $T^*$ reveal anomalies at an intermediate temperature $T'\sim$100K, especially for the low-energy modes at 130cm$^{-1}$ and 180cm$^{-1}$. Since these low-energy modes are dominated by Mo-related lattice vibration, we propose that lattice anomalies at $T'$ within the charge density wave phase are related to a modification of the Mo displacements while preserving the crystal symmetry. △ Less

Submitted 27 February, 2025; originally announced February 2025.

Comments: 9 pages, 6 figures. The supplemental materials are available upon request

Giant Topological Hall Effect Across Wide Temperature in Pt/NiCo2O4 Heterostructure

Authors: Bharat Giri, Ahsan Ullah, Jing Li, Bjorn Josteinsson, Zhewen Xu, Suvechhya Lamichhane, Adam Erickson, Arjun Subedi, Peter A Dowben, Gabriel Puebla Hellmann, Abdelghani Laraoui, Sy-Hwang Liou, Xiaoshan Xu

Abstract: Topological Hall effect (THE), a quantum phenomenon arising from emergent magnetic field generated by topological spin texture, is a key method for detecting non-coplanar spin structures like skyrmions in magnetic materials. Here, we investigate a bilayer structure of Pt and conducting ferrimagnet NiCo2O4 (NCO) of perpendicular magnetic anisotropy and demonstrate giant THE across a temperature ran… ▽ More Topological Hall effect (THE), a quantum phenomenon arising from emergent magnetic field generated by topological spin texture, is a key method for detecting non-coplanar spin structures like skyrmions in magnetic materials. Here, we investigate a bilayer structure of Pt and conducting ferrimagnet NiCo2O4 (NCO) of perpendicular magnetic anisotropy and demonstrate giant THE across a temperature range 2 - 350 K. The absence of THE in single-layer Pt and NCO, as well as in Pt/Cu/NCO, suggests its interfacial origin. The maximum THE occurring just before the NCO coercive field indicates its connection to magnetic nucleation centers, which are topologically equivalent to skyrmions. The large normalized THE, based on the emergent-field model, points to a high population density of small nucleation centers. This aligns with the unresolvable domain structures during magnetization reversal, even though clear domain structures are detected after zero-field cooling. These results establish heavy metal/NCO as a promising system for exploring topological spin structures. △ Less

Submitted 25 February, 2025; v1 submitted 18 February, 2025; originally announced February 2025.

Comments: 27 pages, 16 figures, submitted to Nano Letters

Bacterial swimming and accumulation on endothelial cell surfaces

Authors: Xin-Xin Xu, Yangguang Tian, Yuhe Pu, Bingchen Che, Hao Luo, Yanan Liu, Yan-Jun Liu, Guangyin Jing

Abstract: Flagellar-driven locomotion plays a critical role in bacterial attachment and colonization of surfaces, contributing to the risks of contamination and infection. Tremendous attempts to uncover the underlying principles governing bacterial motility near surfaces have relied on idealized assumptions of surrounding inorganic boundaries. However, in the context of living systems, the role of cells fro… ▽ More Flagellar-driven locomotion plays a critical role in bacterial attachment and colonization of surfaces, contributing to the risks of contamination and infection. Tremendous attempts to uncover the underlying principles governing bacterial motility near surfaces have relied on idealized assumptions of surrounding inorganic boundaries. However, in the context of living systems, the role of cells from tissues and organs becomes increasingly critical, particularly in bacterial swimming and adhesion, yet it remains poorly understood. Here, we propose using biological surfaces composed of vascular endothelial cells to experimentally investigate bacterial motion and interaction behaviors. Our results reveal that bacterial trapping observed on inorganic surfaces is counteractively manifested with reduced radii of circular motion on cellular surfaces, while with two distinct modes of bacterial adhesion: tight adhesion and loose adhesion. Interestingly, the presence of living cells enhances bacterial surface enrichment, and imposed flow intensifies this accumulation via bias-swimming effect. These results surprisingly indicate that physical effects remain the dominant factor regulating bacterial motility and accumulation at the single-cell layer level in vitro, bridging the gap between simplified hydrodynamic mechanisms and complex biological surfaces, with relevance to biofilm formation and bacterial contamination. △ Less

Submitted 18 February, 2025; originally announced February 2025.

Comments: 5 figures

Abnormal Normal State and Pressure-driven Reentrant Superconductivity in the Heavy $d$-electron Superconductor Rh$_{17}$S$_{15}$

Authors: Xiaofeng Xu, J. Y. Nie, C. Q. Xu, Z. M. Zhu, Xiangzhuo Xing, Y. L. Huang, C. T. Zhang, N. Zuo, C. C. Zhao, Z. Y. Zhang, W. Zhou, W. H. Jiao, S. Xu, Q. Zhang, Zhu-An Xu, X. B. Liu, Dong Qian, Shiyan Li

Abstract: Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists u… ▽ More Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists up to room temperature. We show that the broad hump in its resistivity likely results from the Kondo interaction of the conduction electrons with this novel magnetism. By applying pressure, superconductivity is fully suppressed first. In the high-pressure regime, however, we observe a second dome of superconductivity with its maximum $T_c$ greater than the ambient pressure value, highlighting the possible \textit{unconventional} superconductivity in this heavy $d$-electron sulfide. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Comments: 4 figures

Journal ref: Phys. Rev. B 111, L161113 (2025)

Global Universal Scaling and Ultra-Small Parameterization in Machine Learning Interatomic Potentials with Super-Linearity

Authors: Yanxiao Hu, Ye Sheng, Jing Huang, Xiaoxin Xu, Yuyan Yang, Mingqiang Zhang, Yabei Wu, Caichao Ye, Jiong Yang, Wenqing Zhang

Abstract: Using machine learning (ML) to construct interatomic interactions and thus potential energy surface (PES) has become a common strategy for materials design and simulations. However, those current models of machine learning interatomic potential (MLIP) provide no relevant physical constrains, and thus may owe intrinsic out-of-domain difficulty which underlies the challenges of model generalizabilit… ▽ More Using machine learning (ML) to construct interatomic interactions and thus potential energy surface (PES) has become a common strategy for materials design and simulations. However, those current models of machine learning interatomic potential (MLIP) provide no relevant physical constrains, and thus may owe intrinsic out-of-domain difficulty which underlies the challenges of model generalizability and physical scalability. Here, by incorporating physics-informed Universal-Scaling law and nonlinearity-embedded interaction function, we develop a Super-linear MLIP with both Ultra-Small parameterization and greatly expanded expressive capability, named SUS2-MLIP. Due to the global scaling rooting in universal equation of state (UEOS), SUS2-MLIP not only has significantly-reduced parameters by decoupling the element space from coordinate space, but also naturally outcomes the out-of-domain difficulty and endows the potentials with inherent generalizability and scalability even with relatively small training dataset. The nonlinearity-enbeding transformation for interaction function expands the expressive capability and make the potentials super-linear. The SUS2-MLIP outperforms the state-of-the-art MLIP models with its exceptional computational efficiency especially for multiple-element materials and physical scalability in property prediction. This work not only presents a highly-efficient universal MLIP model but also sheds light on incorporating physical constraints into artificial-intelligence-aided materials simulation. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Visualizing Field-free Deterministic Magnetic Switching of all-van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride

Authors: Xi Zhang, Jingcheng Zhou, Chaowei Hu, Kuangyin Deng, Chuangtang Wang, Nishkarsh Agarwal, Hanshang Jin, Faris A. Al-Matouq, Stelo Xu, Roshan S. Trivedi, Senlei Li, Sumedh Rathi, Hanyi Lu, Zhigang Jiang, Valentin Taufour, Robert Hovden, Liuyan Zhao, Ran Cheng, Xiaodong Xu, Jiun-Haw Chu, Chunhui Rita Du, Hailong Wang

Abstract: Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great… ▽ More Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices. △ Less

Submitted 6 February, 2025; originally announced February 2025.

Comments: 13 pages, 4 figures

Bacterial dimensions sensitively regulate surface diffusivity and residence time

Authors: Premkumar Leishangthem, Xuan Wang, Junan Chen, Shengqi Yang, Xinliang Xu

Abstract: Run-and-tumble is a common but vital strategy that bacteria employ to explore environment suffused with boundaries, as well as to escape from entrapment. In this study we reveal how this strategy and the resulting dynamical behavior can be sensitively regulated by bacterial dimensions. Our results demonstrate that the logarithm of the surface residence time for bacteria with constant tumble bias i… ▽ More Run-and-tumble is a common but vital strategy that bacteria employ to explore environment suffused with boundaries, as well as to escape from entrapment. In this study we reveal how this strategy and the resulting dynamical behavior can be sensitively regulated by bacterial dimensions. Our results demonstrate that the logarithm of the surface residence time for bacteria with constant tumble bias is linearly related to a dimensionless parameter of bacterial intrinsic size characteristics, where a small variation in bacterial dimensions, which is natural in a suspension, reproduces well the experimentally observed large variation in bacterial residence time. Furthermore, our results predict that the optimal tumble bias corresponding to the maximum surface diffusivity depends strongly on bacterial dimensions, where the same small variation in bacterial dimensions gives rise to a strongly diversified optimal tumble bias and an order of magnitude change in surface diffusivity. △ Less

Submitted 29 January, 2025; originally announced January 2025.

Comments: 5 pages, 4 figures

Magnon-mediated perpendicular magnetization switching by topological crystalline insulator SnTe with high spin Hall conductivity

Authors: Pengnan Zhao, Guoyi Shi, Wentian Lu, Lihuan Yang, Hui Ru Tan, Kaiwei Guo, Jia-Min Lai, Zhonghai Yu, Anjan Soumyanarayanan, Zhe Yuan, Fei Wang, Xiaohong Xu, Hyunsoo Yang

Abstract: Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-p… ▽ More Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-power manipulation of perpendicular magnetization via magnon torques in SnTe/NiO/CoFeB devices at room temperature. Topological crystalline insulator SnTe exhibits a high spin Hall conductivity of $σ_s \approx 6.1\times 10^4 (\hbar/2e)\cdot (Ω\cdot m)^{-1}$, which facilitates the generation of magnon currents in an antiferromagnetic insulator NiO. The magnon currents traverse the 20-nm-thick NiO layer and subsequently exert magnon torques on the adjacent ferromagnetic layer, leading to magnetization switching. Notably, we achieve a 22-fold reduction in power consumption in SnTe/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples. Our findings establish the low-power perpendicular magnetization manipulation through magnon torques, significantly expanding the range of topological materials with practical applications. △ Less

Submitted 26 January, 2025; originally announced January 2025.

Comments: 45 pages, 28 figures

Wafer-scale Integration of Single-Crystalline MoS$_2$ for Flexible Electronics Enabled by Oxide Dry-transfer

Authors: Xiang Xu, Yitong Chen, Jichuang Shen, Qi Huang, Tong Jiang, Han Chen, Huaze Zhu, Yaqing Ma, Hao Wang, Wenhao Li, Chen Ji, Dingwei Li, Siyu Zhang, Yan Wang, Bowen Zhu, Wei Kong

Abstract: Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface… ▽ More Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface contamination, significantly degrading device performance. Here, we present a wafer-scale dry-transfer technique using a high-dielectric oxide as the transfer medium, enabling the integration of 4-inch single-crystalline MoS$_2$ onto flexible substrates. This method eliminates contact with polymers or solvents, thus preserving the intrinsic electronic properties of MoS$_2$. As a result, the fabricated flexible field-effect transistor (FET) arrays exhibit remarkable performance, with a mobility of 117 cm$^2$/Vs, a subthreshold swing of 68.8 mV dec$^{-1}$, and an ultra-high current on/off ratio of $10^{12}$-values comparable to those achieved on rigid substrates. Leveraging the outstanding electrical characteristics, we demonstrated MoS$_2$-based flexible inverters operating in the subthreshold regime, achieving both a high gain of 218 and ultra-low power consumption of 1.4 pW/$μ$m. Additionally, we integrated a flexible tactile sensing system driven by active-matrix MoS$_2$ FET arrays onto a robotic gripper, enabling real-time object identification. These findings demonstrate the simultaneous achievement of high electrical performance and flexibility, highlighting the immense potential of single-crystalline TMDC-based flexible electronics for real-world applications. △ Less

Submitted 23 January, 2025; originally announced January 2025.

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Authors: Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran

Abstract: Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the… ▽ More Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional lattice of the material formed by the extremely strong B-N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science. △ Less

Submitted 22 January, 2025; originally announced January 2025.

Variations of saturation vapor pressure and evaporation rate with cohesive energy of liquids

Authors: Xuefeng Xu

Abstract: Cohesion energy is an important property of liquid, and thus should affect the saturation vapor pressure and the evaporation rate of the liquids. Here, an analytical expression that relates the saturation vapor pressure of a liquid with its cohesive energy was first deduced, and the relationship of the evaporation rate of sessile liquid droplet to the liquid cohesive energy was then obtained. Cohesion energy is an important property of liquid, and thus should affect the saturation vapor pressure and the evaporation rate of the liquids. Here, an analytical expression that relates the saturation vapor pressure of a liquid with its cohesive energy was first deduced, and the relationship of the evaporation rate of sessile liquid droplet to the liquid cohesive energy was then obtained. △ Less

Submitted 18 January, 2025; originally announced January 2025.

Effects of disorder on the quantum transport properties in topologically nontrivial metal PbTaSe$_{2}$

Authors: Longfei Sun, Yue Sun, Qiang Hou, R. Sankar, R. Kalaivanan, Xiaofeng Xu, Zhixiang Shi, Tsuyoshi Tamegai

Abstract: Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this study, we report the observation of WAL in topologically nontrivial metal PbTaSe$_{2}$ at low temperatures. In the pristine sample, we identified the presence of… ▽ More Weak antilocalization (WAL), an increase in the electrical conductivity at low temperatures associated with the suppression of electron localization due to quantum interference effects, is often observed in topological materials. In this study, we report the observation of WAL in topologically nontrivial metal PbTaSe$_{2}$ at low temperatures. In the pristine sample, we identified the presence of WAL, which is attributed to the topologically protected backscattering. In order to investigate the influence of disorder on the WAL, we successively introduced controlled amounts of disorder by H$^{+}$-irradiation. As disorder increases, the dip-like magnetoresistance caused by WAL changes to a linear magnetoresistance(MR), and eventually to a quadratic MR as the electronic system becomes highly localized. This research unveils the significance of disorder in shaping the quantum transport characteristics of topological materials. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Comments: 7 pages. 4 figures

Journal ref: Phys. Rev. B 111, 024502 (2025)

Molecular HDD Logic for Encrypted Massive Data Storage

Authors: Bingjie Guo, Xinhui Chen, An Chen, Jinxin Wang, Wuhong Xue, Tao Wang, Zhixin Wu, Xiaolong Zhong, Jianmin Zeng, Jinjin Li, Mao Li, Xiaohong Xu, Yu Chen, Gang Liu

Abstract: Organic memories, with small dimension, fast speed and long retention features, are considered as promising candidates for massive data archiving. In order to satisfy the re-quirements for ultra-low power and high-security information storage, we design a concep-tual molecular hard-disk (HDD) logic scheme that is capable to execute in-situ encryption of massive data in pW/bit power-consumption ran… ▽ More Organic memories, with small dimension, fast speed and long retention features, are considered as promising candidates for massive data archiving. In order to satisfy the re-quirements for ultra-low power and high-security information storage, we design a concep-tual molecular hard-disk (HDD) logic scheme that is capable to execute in-situ encryption of massive data in pW/bit power-consumption range. Beneficial from the coupled mechanism of counter-balanced redox reaction and local ion drifting, the basic HDD unit consisting of ~ 200 self-assembled RuXLPH molecules in a monolayer (SAM) configuration undergoes unique conductance modulation with continuous, symmetric and low-power switching char-acteristics. 96-state memory performance, which allows 6-bit data storage and single-unit one-step XOR operation, is realized in the RuXLPH SAM sample. Through single-unit XOR manipulation of the pixel information, in-situ bitwise encryption of the Mogao Grottoes mural images stored in the molecular HDD is demonstrated. △ Less

Submitted 8 January, 2025; originally announced January 2025.

Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled in van der Waals Multiferroic Tunnel Junctions

Authors: Zhi Yan, Xujin Zhang, Jianhua Xiao, Cheng Fang, Xiaohong Xu

Abstract: Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a \(\mathrm{CrBr_3/MnPSe_3/CrBr_3}\) vertical heterostructure, which achieves ferroelectric polarization reversal without relying on at… ▽ More Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a \(\mathrm{CrBr_3/MnPSe_3/CrBr_3}\) vertical heterostructure, which achieves ferroelectric polarization reversal without relying on atomic migration driven by inversion symmetry breaking. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe$_2$/alkali-metal (Li/Na/K)-doped/intercalated CrBr$_3$ electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding $8.1\times10^5$\% and tunneling electroresistance (TER) reaching 2499\%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to $3.6\times 10^7$\% and TER to 9990\%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of $9.55\times10^9$\%, representing the highest value reported for vertical tunnel junctions. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies. △ Less

Submitted 3 February, 2025; v1 submitted 1 January, 2025; originally announced January 2025.

Comments: 7 pages, 4 figures

Generalized Entropy Theory Investigation of the Relatively High Segmental Fragility of Many Glass-Forming Polymers

Authors: Xiaolei Xu, Jack F. Douglas, Wen-Sheng Xu

Abstract: We utilize the generalized entropy theory (GET) of glass formation to address one of the most singular and least understood properties of polymer glass-forming liquids in comparison to atomic and small molecule liquids -- the often relatively high fragility of the polymer dynamics on a segmental scale, $m_s$. We first analyze the relation between $m_s$ and the ratio, $S_c^*/ S_c(T_{\mathrm{g}})$.… ▽ More We utilize the generalized entropy theory (GET) of glass formation to address one of the most singular and least understood properties of polymer glass-forming liquids in comparison to atomic and small molecule liquids -- the often relatively high fragility of the polymer dynamics on a segmental scale, $m_s$. We first analyze the relation between $m_s$ and the ratio, $S_c^*/ S_c(T_{\mathrm{g}})$. We find that an apparently general nonlinear relation between $m_s$ and $S_c^*/ S_c(T_{\mathrm{g}})$ holds to a good approximation for a large class of polymer models, $m_s \approx 7.9 \exp [0.6S_c^*/ S_c(T_{\mathrm{g}})]$. The predicted ranges of $m_s$ and $S_c^*/ S_c(T_{\mathrm{g}})$ are consistent with experimental estimates for high molecular-mass polymer, oligomeric, small molecule, and atomic glass-forming liquids. In particular, relatively high values of $m_s$ are found for polymers having complex monomer structures and significant chain stiffness. The variation of $m_s$ with molecular mass, chain stiffness, and intermolecular interaction strength can be traced to the variation of $S_c^*$, which is shown to provide a measure of packing frustration defined in terms of the dimensionless thermal expansion coefficient and isothermal compressibility. The often relatively high fragility and large extent of cooperative motion are found in the GET to derive from the often relatively large packing frustration in this class of polymer glass-forming liquids. Finally, we also develop a tentative model of the ``dynamical segmental relaxation time'' based on the GET, in which the polymers on a coarse-grained scale are modeled as strings of structureless ``beads'', as assumed in the Rouse and reptation models of polymer dynamics. △ Less

Submitted 24 December, 2024; originally announced December 2024.

Comments: 63 pages, 9 figures

Intrinsic pinning of FeSe$_1$$_-$$_x$S$_x$ single crystals probed by torque magnetometry

Authors: Nan Zhou, Yue Sun, Q. Hou, T. Sakakibara, X. Z. Xing, C. Q. Xu, C. Y. Xi, Z. S. Wang, Y. F. Zhang, Y. Q. Pan, B. Chen, X. Luo, Y. P. Sun, Xiaofeng Xu, T. Tamegai, Mingxiang Xu, Zhixiang Shi

Abstract: Intrinsic pinning is caused by natural pinning centers that occur because of the modulation of the order parameter or weak superconducting layers. Early work has shown that intrinsic pinning generates a high pinning force and critical current density in some layered oxide superconductors. Studying the intrinsic pinning of superconductors is crucial for both fundamental studies and potential applic… ▽ More Intrinsic pinning is caused by natural pinning centers that occur because of the modulation of the order parameter or weak superconducting layers. Early work has shown that intrinsic pinning generates a high pinning force and critical current density in some layered oxide superconductors. Studying the intrinsic pinning of superconductors is crucial for both fundamental studies and potential applications. Herein, we use torque magnetometry to study angle-resolved in-plane and out-of-plane magnetic torque for a series of high-quality FeSe$_1$$_-$$_x$S$_x$ single crystals. A fourfold torque signal was observed when the magnetic field was within the \textit{ab} plane. We interpret that this fourfold in-plane irreversible torque is from the intrinsic pinning due to combined effects of gap nodes/minimum and twin domains. Additionally, we attributed the observed out-of-plane torque peaks to intrinsic pinning due to the layered structure. △ Less

Submitted 6 December, 2024; originally announced December 2024.

Comments: 10 pages, 7 figures

Journal ref: Materials Today Physics 37 (2023) 101195

Spatiotemporal imaging of nonlinear optics in van der Waals waveguides

Authors: Ding Xu, Zhi Hao Peng, Chiara Trovatello, Shan-Wen Cheng, Xinyi Xu, Aaron Sternbach, Dmitri N. Basov, P. James Schuck, Milan Delor

Abstract: Van der Waals (vdW) semiconductors have emerged as promising platforms for efficient nonlinear optical conversion, including harmonic and entangled photon generation. Although major efforts are devoted to integrating vdW materials in nanoscale waveguides for miniaturization, the realization of efficient, phase-matched conversion in these platforms remains challenging. To address this challenge, we… ▽ More Van der Waals (vdW) semiconductors have emerged as promising platforms for efficient nonlinear optical conversion, including harmonic and entangled photon generation. Although major efforts are devoted to integrating vdW materials in nanoscale waveguides for miniaturization, the realization of efficient, phase-matched conversion in these platforms remains challenging. To address this challenge, we develop a far-field ultrafast imaging method to track the propagation of both fundamental and harmonic waves within vdW waveguides with extreme spatiotemporal resolution. Our approach allows systematic optimization of nonlinear conversion by determining the phase-matching angles, mode profiles, and losses in waveguides without a priori knowledge of material properties. We focus on light propagation in slab waveguides of rhombohedral-stacked MoS2, an emerging vdW semiconductor with giant nonlinear susceptibility. Our results reveal that these waveguides support birefringent phase-matching, demonstrating the material's potential for efficient on-chip nonlinear optics. This work establishes spatiotemporal imaging of light propagation in waveguides as an incisive and general method to identify new materials and architectures for efficient nonlinear nanophotonics. △ Less

Submitted 10 December, 2024; originally announced December 2024.

Cell aspect ratio important for bacterial rheotaxis

Authors: Jiachen Zhong, Xinliang Xu

Abstract: When placed in flows with local shear, flagellated bacteria commonly display reorientations towards the local vorticity direction, a chirality-induced rheotactic behavior of great importance for many biological functions. As the observed reorientational dynamics arises from the interplay between the Jeffery dynamics controlled by the cell aspect ratio and the chirality-induced reorientation contro… ▽ More When placed in flows with local shear, flagellated bacteria commonly display reorientations towards the local vorticity direction, a chirality-induced rheotactic behavior of great importance for many biological functions. As the observed reorientational dynamics arises from the interplay between the Jeffery dynamics controlled by the cell aspect ratio and the chirality-induced reorientation controlled by the chiral strength, in this work we quantitatively study how cell aspect ratio can become a key factor in tuning the reorientational dynamics, through numerical and theoretical analysis. Our results reveal that, for sphere-like bacteria the rheotactic behavior sensitively depends on the cell aspect ratio and totally disappears in the limiting case with cell aspect ratio being 1, in very good agreement with our predicted analytic functional form. For needle-like bacteria with cell aspect ratio much larger than 1, the rheotactic behavior becomes insensitive to cell aspect ratio, in agreement with previous experimental observations. △ Less

Submitted 9 December, 2024; originally announced December 2024.

Haldane phase, field-induced magnetic ordering and Tomonaga-Luttinger liquid behavior in a spin-one chain compound NiC$_2$O$_4$$\cdot$2NH$_3$

Authors: Shuo Li, Zhanlong Wu, Yanhong Wang, Jun Luo, Kefan Du, Xiaoyu Xu, Ze Hu, Ying Chen, Jie Yang, Zhengxin Liu, Rong Yu, Yi Cui, Rui Zhou, Hongcheng Lu, Weiqiang Yu

Abstract: We performed single-crystal magnetic susceptibility and $^1$H NMR measurements on a quasi-1D, spin-1 antiferromagnet NiC$_2$O$_4$$\cdot$2NH$_3$, with temperature down to 100 mK and with field up to 26 T. With field applied along the chain direction (crystalline $b$ direction), a spin gap is determined at low fields. Our susceptibility and spin-lattice relaxation measurements reveal a Haldane phase… ▽ More We performed single-crystal magnetic susceptibility and $^1$H NMR measurements on a quasi-1D, spin-1 antiferromagnet NiC$_2$O$_4$$\cdot$2NH$_3$, with temperature down to 100 mK and with field up to 26 T. With field applied along the chain direction (crystalline $b$ direction), a spin gap is determined at low fields. Our susceptibility and spin-lattice relaxation measurements reveal a Haldane phase at low field, with an intrachain exchange coupling $J$ $\approx$ 35 K and an easy-plane single-ion anisotropy of 17 K. A field-induced antiferromagnetic (AFM) ordering emerges at fields of 2.1 T, which sets a three-dimensional (3D) quantum critical point (QCP). The high-temperature spin-lattice relaxation rates $1/T_1$ resolves an onset of Tomonaga-Luttinger liquid behavior at field above $3.5$ T, which characterizes a hidden 1D QCP. △ Less

Submitted 29 November, 2024; originally announced November 2024.

Comments: 9 pages, 8 figures

Unveiling the anisotropy of linear and nonlinear charge-spin conversion in Weyl semimetal TaIrTe4

Authors: Tao Tang, Mengzhou Li, Bin Lao, Xuan Zheng, Wei Zhou, Xiaofeng Xu, Jie Pang, You-guo Shi, Run-Wei Li, Zhiming Wang

Abstract: In Weyl semimetals, the nonlinear planar Hall effect (NPHE) and spin-orbit torque (SOT) are prominent manifestations of nonlinear and linear charge-spin conversion, respectively. However, simultaneous investigations of these phenomena within a single material system are scarce, limiting our understanding of their intrinsic connection and underlying mechanisms. Here, we report the first simultaneou… ▽ More In Weyl semimetals, the nonlinear planar Hall effect (NPHE) and spin-orbit torque (SOT) are prominent manifestations of nonlinear and linear charge-spin conversion, respectively. However, simultaneous investigations of these phenomena within a single material system are scarce, limiting our understanding of their intrinsic connection and underlying mechanisms. Here, we report the first simultaneous observation of NPHE and SOT in a TaIrTe4/Py heterostructure. By employing harmonic Hall measurements and developing a magnetic field-dependent method, we successfully separated the contributions from NPHE, field-like SOT, and damping-like SOT, enabling accurate characterization of both linear and nonlinear charge-spin conversion properties. Our experiments revealed significant anisotropy along the [100] and [010] crystallographic directions of TaIrTe4, with stronger nonlinear responses and field-like SOT along the [100] direction, and larger damping-like SOT along the [010] direction. The distinct directional dependence of these phenomena provides new insights into the interplay between surface and bulk contributions to charge-spin conversion in Weyl semimetals. These findings enhance our understanding of anisotropic charge-spin conversion mechanisms in Weyl semimetals, which may inform future research and development of spintronic devices based on topological materials. △ Less

Submitted 28 November, 2024; originally announced November 2024.

Exciton Dressing by Extreme Nonlinear Magnons in a Layered Semiconductor

Authors: Geoffrey M. Diederich, Mai Nguyen, John Cenker, Jordan Fonseca, Sinabu Pumulo, Youn Jue Bae, Daniel G. Chica, Xavier Roy, Xiaoyang Zhu, Di Xiao, Yafei Ren, Xiaodong Xu

Abstract: Collective excitations presenting nonlinear dynamics are fundamental phenomena with broad applications. A prime example is nonlinear optics, where diverse frequency mixing processes are central to communication, sensing, wavelength conversion, and attosecond physics. Leveraging recent progress in van der Waals magnetic semiconductors, we demonstrate nonlinear opto-magnonic coupling by presenting e… ▽ More Collective excitations presenting nonlinear dynamics are fundamental phenomena with broad applications. A prime example is nonlinear optics, where diverse frequency mixing processes are central to communication, sensing, wavelength conversion, and attosecond physics. Leveraging recent progress in van der Waals magnetic semiconductors, we demonstrate nonlinear opto-magnonic coupling by presenting exciton states dressed by up to 20 harmonics of magnons, resulting from their nonlinearities, in the layered antiferromagnetic semiconductor CrSBr. We also create tunable optical side bands from sum- and difference-frequency generation between two optically bright magnon modes under symmetry breaking magnetic fields. Moreover, the observed difference-frequency generation mode can be continuously tuned into resonance with one of the fundamental magnons, resulting in parametric amplification of magnons. These findings realize the modulation of the optical frequency exciton with the extreme nonlinearity of magnons at microwave frequencies, which could find applications in magnonics and hybrid quantum systems, and provide new avenues for implementing opto-magnonic devices. △ Less

Submitted 22 November, 2024; originally announced November 2024.

Investigation of magnetic excitations and charge order in a van der Waals ferromagnet Fe$_5$GeTe$_2$

Authors: V. K. Bhartiya, T. Kim, J. Li, T. P. Darlington, D. J. Rizzo, Y. Gu., S. Fan, C. Nelson, J. W. Freeland, X. Xu, D. N. Basov, J. Pelliciari, A. F. May, C. Mazzoli, V. Bisogni

Abstract: Understanding the complex ground state of van der Waals (vdW) magnets is essential for designing new materials and devices that leverage these platforms. Here, we investigate a two-dimensional vdW ferromagnet -- Fe$_5$GeTe$_2$-- with one of the highest reported Curie temperatures, to elucidate its magnetic excitations and charge order. Using Fe $L_3 - $edge resonant inelastic x-ray scattering, we… ▽ More Understanding the complex ground state of van der Waals (vdW) magnets is essential for designing new materials and devices that leverage these platforms. Here, we investigate a two-dimensional vdW ferromagnet -- Fe$_5$GeTe$_2$-- with one of the highest reported Curie temperatures, to elucidate its magnetic excitations and charge order. Using Fe $L_3 - $edge resonant inelastic x-ray scattering, we find the dual character of magnetic excitations, consisting of a coherent magnon and a continuum, similar to what is reported for its sister compound Fe$_3$GeTe$_2$. The magnon has an energy of $\approx$ 36 meV at the maximum in-plane momentum transfer ($-$0.35 r.l.u.) allowed at Fe $L_3 - $edge. A broad and non-dispersive continuum extends up to 150 meV, 50$\%$ higher energy than in Fe$_3$GeTe$_2$. Its intensity is sinusoidally modulated along the $L$ direction, with a period matching the inter-slab distance. Our findings suggest that while the unconventional dual character of magnetic excitations is generic to ternary Fe-Ge-Te vdW magnets, the correlation length of the out-of-plane magnetic interaction increases in Fe$_5$GeTe$_2$ as compared to Fe$_3$GeTe$_2$, supporting a stronger three-dimensional character for the former. Furthermore, by investigating the $\pm$(1/3, 1/3, $L$) peaks by resonant x-ray diffraction, we conclude these to have structural origin rather than charge order -- as previously reported -- and suggest doubling of the structural unit cell along the $c-$axis. △ Less

Submitted 20 November, 2024; v1 submitted 19 November, 2024; originally announced November 2024.

Comments: 17 pages, 3 figures

Twisted Type-II Rashba Homobilayer: A Platform for Tunable Topological Flat Bands

Authors: Xilong Xu, Haonan Wang, Li Yang

Abstract: The recent discovery of topological flat bands in twisted transition metal dichalcogenide homobilayers and multilayer graphene has sparked significant research interest. We propose a new platform for realizing tunable topological moire flat bands: twisted type-II Rashba homobilayers. The interplay between Rashba spin-orbit coupling and interlayer interactions generates an effective pseudo-antiferr… ▽ More The recent discovery of topological flat bands in twisted transition metal dichalcogenide homobilayers and multilayer graphene has sparked significant research interest. We propose a new platform for realizing tunable topological moire flat bands: twisted type-II Rashba homobilayers. The interplay between Rashba spin-orbit coupling and interlayer interactions generates an effective pseudo-antiferromagnetic field, opening a gap within the Dirac cone with non-zero Berry curvature. Using twisted BiTeI bilayers as an example, we predict the emergence of flat topological bands with a remarkably narrow bandwidth (below 20 meV). Notably, the system undergoes a transition from a valley Hall insulator to a quantum spin Hall insulator as the twisting angle increases. This transition arises from a competition between the twisting-driven effective spin-orbit coupling and sublattice onsite energies presented in type-II Rashba moiré structures. The high tunability of Rashba materials in terms of the spin-orbit coupling strength, interlayer interaction, and twisting angle expands the range of materials suitable for realizing and manipulating correlated topological properties. △ Less

Submitted 16 November, 2024; originally announced November 2024.

Comments: 4 figures