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Antiferromagnetism and Ising Ground States in the Rare-earth Garnet Nd$_3$Ga$_5$O$_{12}$
Authors:
N. Zhao,
H. Ge,
L. Zhou,
Z. M. Song,
J. Yang,
T. T. Li,
L. Wang,
Y. Fu,
Y. F. Zhang,
J. B. Xu,
S. M. Wang,
J. W. Mei,
X. Tong,
L. S. Wu,
J. M. Sheng
Abstract:
In this paper, we investigate the low temperature magnetic properties of the rare-earth garnet compound Nd$_3$Ga$_5$O$_{12}$ in detail by means of magnetization, specific heat and magnetocaloric effect measurements. The magnetic thermal properties along with the crystal field calculations reveal that the Nd$^{3+}$ ions form into a frustrated hyper-kagome lattice with connected triangles have an Is…
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In this paper, we investigate the low temperature magnetic properties of the rare-earth garnet compound Nd$_3$Ga$_5$O$_{12}$ in detail by means of magnetization, specific heat and magnetocaloric effect measurements. The magnetic thermal properties along with the crystal field calculations reveal that the Nd$^{3+}$ ions form into a frustrated hyper-kagome lattice with connected triangles have an Ising-like ground state with the easy axis along the local [100], [010] and [001] directions. Instead of a quantum spin liquid ground state, an antiferromagnetically ordered state is found below $T_{\mathrm{N}}=0.52~\rm K$. With applying field in the [111] direction, the antiferromagnetic order is suppressed at the critical field of $B_{\mathrm{c}}=0.75~\rm T$, and enhancement of the critical fluctuations with linear crossover behaviors is observed near the critical point.
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Submitted 18 March, 2023;
originally announced March 2023.
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Successive magnetic orderings in the Ising spin chain magnet DyNi$_5$Ge$_3$
Authors:
H. Ge,
L. Zhang,
N. Zhao,
J. Yang,
L. Wang,
L. Zhou,
Y. Fu,
T. T. Li,
Z. M. Song,
F. Ding,
J. B. Xu,
Y. F. Zhang,
S. M. Wang,
J. W. Mei,
X. Tong,
P. Miao,
H. He,
Q. Zhanghang,
L. S. Wu,
J. M. Sheng
Abstract:
In this report, we investigated a new rare earth based one-dimensional Ising spin chain magnet~\DNG~by means of magnetization, specific heat and powder neutron diffraction measurements. Due to the crystalline electrical field splitting, the magnetic Dy ions share an Ising like ground doublet state. Owning to the local point symmetry, these Ising moments form into two canted magnetic sublattices, w…
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In this report, we investigated a new rare earth based one-dimensional Ising spin chain magnet~\DNG~by means of magnetization, specific heat and powder neutron diffraction measurements. Due to the crystalline electrical field splitting, the magnetic Dy ions share an Ising like ground doublet state. Owning to the local point symmetry, these Ising moments form into two canted magnetic sublattices, which were further confirmed by the angle-dependent magnetization measurement. In zero fields, two successive antiferromagnetic phase transitions were found at temperatures $T_{\mathrm{N1}}=6~\rm K$ and $T_{\mathrm{N2}}=5~\rm K$, respectively. Only part of the moments are statically ordered in this intermediate state between $T_{\mathrm{N1}}$ and $T_{\mathrm{N2}}$. Powder neutron diffraction experiments at different temperatures were performed as well. An incommensurate magnetic propagation vector of $\mathbf{k_{\rm m}}=(0.5,0.4,0.5)$ was identified. The refined spin configurations through the irreducible representation analysis confirmed that these Ising spins are canted in the crystal $ab$~plane.
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Submitted 15 March, 2023;
originally announced March 2023.
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Interplay of itinerant electrons and Ising moments in a hybrid honeycomb quantum magnet TmNi$_3$Al$_9$
Authors:
H. Ge,
C. J. Huang,
Q. Zhang,
N. Zhao,
L. Wang,
J. Yang,
Y. Fu,
L. Zhang,
Z. M. Song,
T. T. Li,
F. Ding,
J. B. Xu,
Y. F. Zhang,
X. Tong,
S. M. Wang,
J. W. Mei,
A. Podlesnyak,
L. S. Wu,
Gang Chen,
J. M. Sheng
Abstract:
The interplay between itinerant electrons and local magnetic moments in quantum materials brings about rich and fascinating phenomena and stimulates various developments in the theoretical framework. In this work, thermodynamic, electric transport, and neutron diffraction measurements were performed on a newly synthesized honeycomb lattice magnet TmNi$_3$Al$_9$. Based on the experimental data, a m…
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The interplay between itinerant electrons and local magnetic moments in quantum materials brings about rich and fascinating phenomena and stimulates various developments in the theoretical framework. In this work, thermodynamic, electric transport, and neutron diffraction measurements were performed on a newly synthesized honeycomb lattice magnet TmNi$_3$Al$_9$. Based on the experimental data, a magnetic field temperature phase diagram was constructed, exhibiting three essentially different magnetic regions. Below ${T_{\rm N}=2.97 \pm 0.02}\ \rm K$ Tm$^{3+}$ moments order antiferromagnetically in zero field. We found that the Tm$^{3+}$ ions form a pseudo-doublet ground state with the Ising-like moments lying normal to the two-dimensional honeycomb layers. Application of a magnetic field along the easy axis gradually suppresses the antiferromagnetic order in favor of an induced ferromagnetic state above the critical field ${B_c=0.92 \pm 0.05}\ \rm T$. In the vicinity of $B_c$, a strong enhancement of the quantum spin fluctuations was observed. The quantum Ising nature of the local moments and the coupling to itinerant electrons are discussed.
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Submitted 2 September, 2022; v1 submitted 18 January, 2022;
originally announced January 2022.
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Memory Effect in Silicon Nitride in Silicon Devices
Authors:
V. A. Gritsenko,
Yu. N. Morokov,
Yu. N. Novikov,
J. B. Xu
Abstract:
The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics. Amorphous silicon nitride and oxynitride are considered now as alternative to silicon oxide in future devices. One of the unique pro…
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The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics. Amorphous silicon nitride and oxynitride are considered now as alternative to silicon oxide in future devices. One of the unique property of amorphous silicon nitride is the electron and hole capture by the deep traps with extremely long life time (10 years) in the captured state (the memory effect). This property is employed in memory devices and microprocessors in computers. Despite numerous efforts the nature of traps responsible for the memory effect in this material is so far unclear. In this paper we discuss the nature of such traps using the quantum-chemical simulation. The calculations show that the defects responsible for the electron and hole capture in amorphous silicon nitride can be the Si-Si defects created by excess silicon atoms.
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Submitted 25 November, 2000;
originally announced November 2000.
