-
In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy
Authors:
Chao Shen,
Wenkang Zhan,
Shujie Pan,
Hongyue Hao,
Ning Zhuo,
Kaiyao Xin,
Hui Cong,
Chi Xu,
Bo Xu,
Tien Khee Ng,
Siming Chen,
Chunlai Xue,
Fengqi Liu,
Zhanguo Wang,
Chao Zhao
Abstract:
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminesce…
▽ More
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.
△ Less
Submitted 31 October, 2024;
originally announced November 2024.
-
SemiEpi: Self-driving, Closed-loop Multi-Step Growth of Semiconductor Heterostructures Guided by Machine Learning
Authors:
Chao Shen,
Wenkang Zhan,
Kaiyao Xin,
Shujie Pan,
Xiaotian Cheng,
Ruixiang Liu,
Zhe Feng,
Chaoyuan Jin,
Hui Cong,
Chi Xu,
Bo Xu,
Tien Khee Ng,
Siming Chen,
Chunlai Xue,
Zhanguo Wang,
Chao Zhao
Abstract:
The semiconductor industry has prioritized automating repetitive tasks through closed-loop, self-driving experimentation, accelerating the optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in self-driving processes with minimal human intervention. This work introduces SemiEpi, a self-driving platform designed to execute molecular beam epitaxy (MBE) gr…
▽ More
The semiconductor industry has prioritized automating repetitive tasks through closed-loop, self-driving experimentation, accelerating the optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in self-driving processes with minimal human intervention. This work introduces SemiEpi, a self-driving platform designed to execute molecular beam epitaxy (MBE) growth of semiconductor heterostructures through multi-step processes, in-situ monitoring, and on-the-fly feedback control. By integrating standard reactor, parameter initialization, and multiple ML models, SemiEpi identifies optimal initial conditions and proposes experiments for multi-step heterostructure growth, eliminating the need for extensive expertise in MBE processes. SemiEpi initializes material growth parameters tailored to specific material characteristics, and fine-tuned control over the growth process is then achieved through ML optimization. We optimize the growth for InAs quantum dots (QDs) heterostructures to showcase the power of SemiEpi, achieving a QD density of 5E10/cm2, 1.6-fold increased photoluminescence (PL) intensity and reduced full width at half maximum (FWHM) of 29.13 meV. This work highlights the potential of closed-loop, ML-guided systems to address challenges in multi-step growth. Our method is critical to achieve repeatable materials growth using commercially scalable tools. Furthermore, our strategy facilitates developing a hardware-independent process and enhancing process repeatability and stability, even without exhaustive knowledge of growth parameters.
△ Less
Submitted 5 January, 2025; v1 submitted 6 August, 2024;
originally announced August 2024.
-
Machine-Learning-Assisted and Real-Time-Feedback-Controlled Growth of InAs/GaAs Quantum Dots
Authors:
Chao Shen,
Wenkang Zhan,
Kaiyao Xin,
Manyang Li,
Zhenyu Sun,
Hui Cong,
Chi Xu,
Jian Tang,
Zhaofeng Wu,
Bo Xu,
Zhongming Wei,
Chunlai Xue,
Chao Zhao,
Zhanguo Wang
Abstract:
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots, which has motivated studies of the growth process control to realize high-quality epi-wafers and devices. Establishing the process parameters in molecular beam…
▽ More
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots, which has motivated studies of the growth process control to realize high-quality epi-wafers and devices. Establishing the process parameters in molecular beam epitaxy (MBE) for a specific density of QDs is a multidimensional optimization challenge, usually addressed through time-consuming and iterative trial-and-error. Here, we report a real-time feedback control method to realize the growth of QDs with arbitrary density, which is fully automated and intelligent. We developed a machine learning (ML) model named 3D ResNet 50 trained using reflection high-energy electron diffraction (RHEED) videos as input instead of static images and providing real-time feedback on surface morphologies for process control. As a result, we demonstrated that ML from previous growth could predict the post-growth density of QDs, by successfully tuning the QD densities in near-real time from 1.5E10 cm-2 down to 3.8E8 cm-2 or up to 1.4E11 cm-2. Compared to traditional methods, our approach, with in situ tuning capabilities and excellent reliability, can dramatically expedite the material optimization process and improve the reproducibility of MBE, constituting significant progress for thin film growth techniques. The concepts and methodologies proved feasible in this work are promising to be applied to a variety of material growth processes, which will revolutionize semiconductor manufacturing for optoelectronic and microelectronic industries.
△ Less
Submitted 11 October, 2023; v1 submitted 22 June, 2023;
originally announced June 2023.
