Showing 1–16 of 16 results for author: Xiang, F

Sensing a magnetic rare-earth surface alloy by proximity effect with an open-shell nanographene

Authors: Nicolò Bassi, Jan Wilhelm, Nils Krane, Feifei Xiang, Patrícia Čmelová, Elia Turco, Pierluigi Gargiani, Carlo Pignedoli, Michal Juríček, Roman Fasel, Richard Koryt ár, Pascal Ruffieux, .

Abstract: Open-shell nanographenes have attracted significant attention due to their structurally tunable spin ground state. While most characterization has been conducted on weakly-interacting substrates such as noble metals, the influence of magnetic surfaces remains largely unexplored. In this study, we investigate how TbAu2, a rare-earth-element-based surface alloy, affects the magnetic properties of ph… ▽ More Open-shell nanographenes have attracted significant attention due to their structurally tunable spin ground state. While most characterization has been conducted on weakly-interacting substrates such as noble metals, the influence of magnetic surfaces remains largely unexplored. In this study, we investigate how TbAu2, a rare-earth-element-based surface alloy, affects the magnetic properties of phenalenyl (or [2]triangulene (2T)), the smallest spin-1/2 nanographene. Scanning tunneling spectroscopy (STS) measurements reveal a striking contrast: while 2T on Au(111) exhibits a zero-bias Kondo resonance - a hallmark of a spin-1/2 impurity screened by the conduction electrons of the underlying metal - deposition on TbAu2 induces a symmetric splitting of this feature by approximately 20 mV. We attribute this splitting to a strong proximity-induced interaction with the ferromagnetic out-of-plane magnetization of TbAu2. Moreover, our combined experimental and first-principles analysis demonstrates that this interaction is spatially modulated, following the periodicity of the TbAu2 surface superstructure. These findings highlight that TbAu2 serves as a viable platform for stabilizing and probing the magnetic properties of spin-1/2 nanographenes, opening new avenues for the integration of π-magnetic materials with magnetic substrates. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer

Authors: Amogh Kinikar, Feifei Xiang, Lucia Palomino Ruiz, Li-Syuan Lu, Chengye Dong, Yanwei Gu, Rimah Darawish, Eve Ammerman, Oliver Groening, Klaus Muellen, Roman Fasel, Joshua A. Robinson, Pascal Ruffieux, Bruno Schuler, Gabriela Borin Barin

Abstract: On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approach provides unmatched control over electronic and structural characteristics, integrating GNRs into functional electronic devices requires their transfer from noble metal growth surfaces to technologically relevant subst… ▽ More On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approach provides unmatched control over electronic and structural characteristics, integrating GNRs into functional electronic devices requires their transfer from noble metal growth surfaces to technologically relevant substrates. However, such transfers often induce structural modifications, potentially degrading or eliminating GNRs' desired functionality - a process that remains poorly understood. In this study, we employ low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to characterize 9-atom-wide armchair GNRs (9-AGNRs) following polymer-free wet-transfer onto epitaxial graphene (EG) and quasi-freestanding epitaxial graphene (QFEG) substrates. Our results reveal that armchair GNRs maintain their structural integrity post-transfer, while GNRs with extended or modified edge topologies exhibit significant structural changes, including partial disintegration. Additionally, STS measurements reveal differences in the Fermi level alignment between GNRs and the graphene substrates, a key factor in optimizing carrier injection efficiency in electronic transport devices. This study establishes a framework for detecting post-processing structural modifications in GNRs, which are often hidden in optical ensemble measurements. By addressing the challenges of substrate transfer and providing new insights into GNR-substrate interactions, these findings pave the way for the reliable integration of atomically precise GNRs into next-generation nanoelectronic and optoelectronic devices. △ Less

Submitted 4 April, 2025; originally announced April 2025.

Precise large-scale chemical transformations on surfaces: deep learning meets scanning probe microscopy with interpretability

Authors: Nian Wu, Markus Aapro, Joakim S. Jestilä, Robert Drost, Miguel Martınez Garcıa, Tomas Torres, Feifei Xiang, Nan Cao, Zhijie He, Giovanni Bottari, Peter Liljeroth, Adam S. Foster

Abstract: Scanning Probe Microscopy (SPM) techniques have shown great potential in fabricating nanoscale structures endowed with exotic quantum properties achieved through various manipulations of atoms and molecules. However, precise control requires extensive domain knowledge, which is not necessarily transferable to new systems and cannot be readily extended to large-scale operations. Therefore, efficien… ▽ More Scanning Probe Microscopy (SPM) techniques have shown great potential in fabricating nanoscale structures endowed with exotic quantum properties achieved through various manipulations of atoms and molecules. However, precise control requires extensive domain knowledge, which is not necessarily transferable to new systems and cannot be readily extended to large-scale operations. Therefore, efficient and autonomous SPM techniques are needed to learn optimal strategies for new systems, in particular for the challenge of controlling chemical reactions and hence offering a route to precise atomic and molecular construction. In this paper, we developed a software infrastructure named AutoOSS (\textbf{Auto}nomous \textbf{O}n-\textbf{S}urface \textbf{S}ynthesis) to automate bromine removal from hundreds of Zn(II)-5,15-bis(4-bromo-2,6-dimethylphenyl)porphyrin (\ch{ZnBr2Me4DPP}) on Au(111), using neural network models to interpret STM outputs and deep reinforcement learning models to optimize manipulation parameters. This is further supported by Bayesian Optimization Structure Search (BOSS) and Density Functional Theory (DFT) computations to explore 3D structures and reaction mechanisms based on STM images. △ Less

Submitted 10 December, 2024; v1 submitted 30 September, 2024; originally announced September 2024.

Electronic decoupling and hole-doping of graphene nanoribbons on metal substrates by chloride intercalation

Authors: Amogh Kinikar, Thorsten G. Englmann, Marco Di Giovannantonio, Nicolò Bassi, Feifei Xiang, Samuel Stolz, Roland Widmer, Gabriela Borin Barin, Elia Turco, Néstor Merino Díez, Kristjan Eimre, Andres Ortega Guerrero, Xinliang Feng, Oliver Gröning, Carlo A. Pignedoli, Roman Fasel, Pascal Ruffieux

Abstract: Atomically precise graphene nanoribbons (GNRs) have a wide range of electronic properties that depend sensitively on their chemical structure. Several types of GNRs have been synthesized on metal surfaces through selective surface-catalyzed reactions. The resulting GNRs are adsorbed on the metal surface, which may lead to hybridization between the GNR orbitals and those of the substrate. This make… ▽ More Atomically precise graphene nanoribbons (GNRs) have a wide range of electronic properties that depend sensitively on their chemical structure. Several types of GNRs have been synthesized on metal surfaces through selective surface-catalyzed reactions. The resulting GNRs are adsorbed on the metal surface, which may lead to hybridization between the GNR orbitals and those of the substrate. This makes investigation of the intrinsic electronic properties of GNRs more difficult, and also rules out capacitive gating. Here we demonstrate the formation of a dielectric gold chloride adlayer that can intercalate underneath GNRs on the Au(111) surface. The intercalated gold chloride adlayer electronically decouples the GNRs from the metal and leads to a substantial hole doping of the GNRs. Our results introduce an easily accessible tool in the in situ characterization of GNRs grown on Au(111) that allows for exploration of their electronic properties in a heavily hole-doped regime. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: Supporting information follows the main text in the same file

Quantum-activated neural reservoirs on-chip open up large hardware security models for resilient authentication

Authors: Zhao He, Maxim S. Elizarov, Ning Li, Fei Xiang, Andrea Fratalocchi

Abstract: Quantum artificial intelligence is a frontier of artificial intelligence research, pioneering quantum AI-powered circuits to address problems beyond the reach of deep learning with classical architectures. This work implements a large-scale quantum-activated recurrent neural network possessing more than 3 trillion hardware nodes/cm$^2$, originating from repeatable atomic-scale nucleation dynamics… ▽ More Quantum artificial intelligence is a frontier of artificial intelligence research, pioneering quantum AI-powered circuits to address problems beyond the reach of deep learning with classical architectures. This work implements a large-scale quantum-activated recurrent neural network possessing more than 3 trillion hardware nodes/cm$^2$, originating from repeatable atomic-scale nucleation dynamics in an amorphous material integrated on-chip, controlled with 0.07 nW electric power per readout channel. Compared to the best-performing reservoirs currently reported, this implementation increases the scale of the network by two orders of magnitude and reduces the power consumption by six, reaching power efficiencies in the range of the human brain, dissipating 0.2 nW/neuron. When interrogated by a classical input, the chip implements a large-scale hardware security model, enabling dictionary-free authentication secure against statistical inference attacks, including AI's present and future development, even for an adversary with a copy of all the classical components available. Experimental tests report 99.6% reliability, 100% user authentication accuracy, and an ideal 50% key uniqueness. Due to its quantum nature, the chip supports a bit density per feature size area three times higher than the best technology available, with the capacity to store more than $2^{1104}$ keys in a footprint of 1 cm$^2$. Such a quantum-powered platform could help counteract the emerging form of warfare led by the cybercrime industry in breaching authentication to target small to large-scale facilities, from private users to intelligent energy grids. △ Less

Submitted 21 March, 2024; originally announced March 2024.

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

Authors: Feifei Xiang, Lysander Huberich, Preston A. Vargas, Riccardo Torsi, Jonas Allerbeck, Anne Marie Z. Tan, Chengye Dong, Pascal Ruffieux, Roman Fasel, Oliver Gröning, Yu-Chuan Lin, Richard G. Hennig, Joshua A. Robinson, Bruno Schuler

Abstract: The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS… ▽ More The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By mapping the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Intrinsically patterned two-dimensional transition metal halides

Authors: Feifei Xiang, Neeta Bisht, Binbin Da, Mohammed S. G. Mohammed, Christian Neiß, Andreas Görling, Sabine Maier

Abstract: Patterning and defect engineering are key methods to tune 2D materials' properties. However, generating 2D periodic patterns of point defects in 2D materials has been elusive until now, despite the well-established methods for creating isolated point defects and defect lines. Herein, we report on intrinsically patterned 2D transition metal dihalides on metal surfaces featuring periodic halogen vac… ▽ More Patterning and defect engineering are key methods to tune 2D materials' properties. However, generating 2D periodic patterns of point defects in 2D materials has been elusive until now, despite the well-established methods for creating isolated point defects and defect lines. Herein, we report on intrinsically patterned 2D transition metal dihalides on metal surfaces featuring periodic halogen vacancies that result in alternating coordination of the transition metal atoms throughout the film. Using low-temperature scanning probe microscopy and low-energy electron diffraction, we identified the structural properties of patterned FeBr$_2$ and CoBr$_2$ monolayers grown epitaxially on Au(111). Density-functional theory reveals that the Br-vacancies are facilitated by low formation energies and accompanied by a lateral softening of the layers leading to a significant reduction of the lattice mismatch to the underlying Au(111). We demonstrate that interfacial epitaxial strain engineering presents a versatile strategy for controlled patterning in 2D. In particular, patterning 2D magnets provides new pathways to create unconventional spin textures with non-collinear spin. △ Less

Submitted 10 May, 2023; originally announced May 2023.

Journal ref: ACS Nano 2024, 18, 29, 18870-18879

C60 Cation as the Carrier of the 9577 and 9632 Angstrom Diffuse Interstellar Bands: Further Support from the VLT/X-Shooter Spectra

Authors: T. P. Nie, F. Y. Xiang, Aigen Li

Abstract: Ever since their first detection over 100 years ago, the mysterious diffuse interstellar bands (DIBs), a set of several hundred broad absorption features seen against distant stars in the optical and near infrared wavelength range, largely remain unidentified. The close match both in wavelengths and in relative strengths recently found between the experimental absorption spectra of gas-phase buckm… ▽ More Ever since their first detection over 100 years ago, the mysterious diffuse interstellar bands (DIBs), a set of several hundred broad absorption features seen against distant stars in the optical and near infrared wavelength range, largely remain unidentified. The close match both in wavelengths and in relative strengths recently found between the experimental absorption spectra of gas-phase buckminsterfullerene ions (C60+) and four DIBs at 9632, 9577, 9428 and 9365 Angstrom (and, to a lesser degree, a weaker DIB at 9348 Angstrom) suggests C60+ as a promising carrier. However, arguments against the C60+ identification remain and are mostly concerned with the large variation in the intensity ratios of the 9632 and 9577 DIBs. In this work, we search for these DIBs in the ESO VLT/X-shooter archival data and identify the 9632, 9577, 9428 and 9365 Angstrom DIBs in a sample of 25 stars. While the 9428 and 9365 Angstrom DIBs are too noisy to allow any reliable analysis, the 9632 and 9577 Angstrom DIBs are unambiguously detected and, after correcting for telluric water vapor absorption, their correlation can be used to probe their origin. To this end, we select a sub-sample of nine hot, O- or B0-type stars of which the stellar Mg II contamination to the 9632 Angstrom DIB is negligibly small. We find their equivalent widths, after normalized by reddening to eliminate their common correlation with the density of interstellar clouds, exhibit a tight, positive correlation. This supports C60+ as the carrier of the 9632 and 9577 Angstrom DIBs. △ Less

Submitted 10 November, 2021; originally announced November 2021.

Comments: 8 pages, 4 figures, 2 tables; accepted for publication in the Monthly Notices of the Royal Astronomical Society

Determination of the spin orientation of helical electrons in monolayer WTe2

Authors: Cheng Tan, Ming-Xun Deng, Feixiang Xiang, Guolin Zheng, Sultan Albarakati, Meri Algarni, James Partridge, Alex R. Hamilton, Rui-Qiang Wang, Lan Wang

Abstract: Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical… ▽ More Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical electrons in WTe2. Based on the predictions of the model, angular dependent magnetoresistance measurements were carried out. The experimental results fully supported the model and the spin orientation of the helical edge electrons was determined. Our results not only demonstrate that WTe2 is indeed a QSHI, but also suggest a convenient method to determine the spin orientation of other QSHIs. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Comments: 32 pages, 11 figures

Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature

Authors: Xiaolin Wang, Feixiang Xiang, David Cortie, Zengji Yue, Zhi Li, Zhidong Zhang, Lina Sang

Abstract: Disorder-induced magnetoresistance has been reported in a range of solid metals and semiconductors, however, the underlying physical mechanism is still under debate because it is difficult to experimentally control. Liquid metals, due to lack of long-range order, offers an ideal model system where many forms of disorder can be deactivated by freezing the liquid. Here we report non-saturating magne… ▽ More Disorder-induced magnetoresistance has been reported in a range of solid metals and semiconductors, however, the underlying physical mechanism is still under debate because it is difficult to experimentally control. Liquid metals, due to lack of long-range order, offers an ideal model system where many forms of disorder can be deactivated by freezing the liquid. Here we report non-saturating magnetoresistance discovered in the liquid state of three metals: Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys. The giant magnetoresistance appears above the respective melting points and has a maximum of 2500% at 14 Tesla. The reduced diamagnetism in the liquid state implies that a short-mean free path of the electron, induced by the spatial distribution of the liquid structure, is a key factor. A potential technological merit of this liquidtronic magnetoresistance is that it naturally operates at higher temperatures. △ Less

Submitted 19 June, 2019; originally announced July 2019.

Comments: 20 pages, 5 figure, submitted

Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures

Authors: Sultan Albarakati, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, Matthew R. Field, Changgu Lee, Yihao Wang, Yiming Xiong, Mingliang Tian, Feixiang Xiang, Alex R. Hamilton, Oleg A. Tretiakov, Dimitrie Culcer, Yu-Jun Zhao, Lan Wang

Abstract: Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We… ▽ More Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures. △ Less

Submitted 25 April, 2019; v1 submitted 23 April, 2019; originally announced April 2019.

Comments: 35 pages (Accepted by Science Advances)

Journal ref: Science Advances, 05 Jul 2019: Vol. 5, no. 7, eaaw0409

Thickness dependent electronic structure in WTe$_2$ thin films

Authors: Fei-Xiang Xiang, Ashwin Srinivasan, Oleh Klochan, Shi-Xue Dou, Alex R. Hamilton, Xiao-Lin Wang

Abstract: We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating th… ▽ More We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating that the overlap between conduction and valence bands is getting smaller and implying the spatial confinement could lift the overlap in even thinner samples. In addition, the quadratic magnetoresistance (MR) also shows a crossover from 3D to 2D behavior as the samples are made thinner, while gating is shown to affect both the quadratic MR and the quantum oscillations of a thin sample by tuning its carrier density. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Comments: 10 pages, 7 figures, supplementary material included

Journal ref: Phys. Rev. B 98, 035115 (2018)

Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2

Authors: Fei-Xiang Xiang, Menno Veldhorst, Shi-Xue Dou, Xiao-Lin Wang

Abstract: We use magneto-transport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed in the temperature range between 2.5 to 200 K and magnetic fields up to 8 T. Shubnikov - de Haas oscillations with beating patterns are observed. The fast Fourier transform of the SdH oscillations reveals three oscillation frequencies,… ▽ More We use magneto-transport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed in the temperature range between 2.5 to 200 K and magnetic fields up to 8 T. Shubnikov - de Haas oscillations with beating patterns are observed. The fast Fourier transform of the SdH oscillations reveals three oscillation frequencies, corresponding to three pairs of Fermi pockets with comparable effective masses , m* ~ 0.31 me. By fitting the Hall resistivity, we infer the presence of one pair of electron pockets and two pairs of hole pockets, together with nearly perfect compensation of the electron-hole carrier concentration. These magnetotransport measurements reveal the complex electronic structure in WTe2, explaining the nonsaturating magnetoresistance. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Comments: Submitted to journal on 1 April, 2015, 4 Figures

Journal ref: EPL, 112 (2015) 37009

Observation of topological transition of Fermi surface from a spindle-torus to a torus in large bulk Rashba spin-split BiTeCl

Authors: Fei-Xiang Xiang, Xiao-Lin Wang, Menno Veldhorst, Shi-Xue Dou, Michael S. Fuhrer

Abstract: The recently observed large Rashba-type spin splitting in the BiTeX (X = I, Br, Cl) bulk states due to the absence of inversion asymmetry and large charge polarity enables observation of the transition in Fermi surface topology from spindle-torus to torus with varying the carrier density. These BiTeX systems with high spin-orbit energy scales offer an ideal platform for achieving practical spintro… ▽ More The recently observed large Rashba-type spin splitting in the BiTeX (X = I, Br, Cl) bulk states due to the absence of inversion asymmetry and large charge polarity enables observation of the transition in Fermi surface topology from spindle-torus to torus with varying the carrier density. These BiTeX systems with high spin-orbit energy scales offer an ideal platform for achieving practical spintronic applications and realizing non-trivial phenomena such as topological superconductivity and Majorana fermions. Here we use Shubnikov-de Haas oscillations to investigate the electronic structure of the bulk conduction band of BiTeCl single crystals with different carrier densities. We observe the topological transition of the Fermi surface (FS) from a spindle-torus to a torus. The Landau level fan diagram reveals the expected non-trivial π Berry phase for both the inner and outer FSs. Angle-dependent oscillation measurements reveal three-dimensional FS topology when the Fermi level lies in the vicinity of the Dirac point. All the observations are consistent with large Rashba spin-orbit splitting in the bulk conduction band. △ Less

Submitted 13 January, 2015; originally announced January 2015.

Comments: 28 pages, supplementary information

Journal ref: Phy. Rev. B 92, 035123 (2015)

Transport evidence for the coexistence of the topological surface state and a two-dimensional electron gas in BiSbTe3 topological insulator

Authors: Fei-Xiang Xiang, Xiao-Lin Wang, Shi-Xue Dou

Abstract: Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent studies by angle-resolved photoemission spectroscopy have demonstrated that a conventional two-dimensional electron gas can coexist with the topological surface… ▽ More Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent studies by angle-resolved photoemission spectroscopy have demonstrated that a conventional two-dimensional electron gas can coexist with the topological surface state due to the quantum confinement effect. The coexistence is expected to give rise to exotic transport properties, which, however, have not been explored so far. Here, we report a magneto-transport study on single crystals of the topological insulator BiSbTe3. Besides Shubnikov-de Haas oscillations and weak anti-localization (WAL) from the topological surface state, we also observed a crossover from the weak anti-localization to weak localization (WL) with increasing magnetic field, which is temperature dependent and exhibits two-dimensional features. The crossover is proposed to be the transport manifestation of the coexistence of the topological surface state and two-dimensional electron gas on the surface of TIs. △ Less

Submitted 29 April, 2014; originally announced April 2014.

Comments: 11 pages, 4 figures

Transport evidence of robust topological surface state in BiTeCl single crystals, the first strong inversion asymmetric topological insulator

Authors: F. X. Xiang, X. L. Wang, S. X. Dou

Abstract: Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the polar semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (… ▽ More Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the polar semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (SIATI). In contrast to the previously discovered 3D TIs with inversion symmetry, the SIATI are expected to exhibit novel topological phenomena, including crystalline-surface-dependent topological surface states, intrinsic topological p-n junctions, and pyroelectric and topological magneto-electric effects3. Here, we report the first transport evidence for the robust topological surface state in the SIATI BiTeCl via observation of Shubnikov-de Haas (SdH) oscillations, which exhibit the 2D nature of the Fermi surface and pi Berry phase. The n = 1 Landau quantization of the topological surface state is observed at B . 12 T without gating, and the Fermi level is only 58.8 meV above the Dirac point, which gives rise to small effective mass, 0.055me, and quite large mobility, 4490 cm2s-1. Our findings will pave the way for future transport exploration of other new topological phenomena and potential applications for strong inversion asymmetric topological insulators. △ Less

Submitted 26 January, 2014; originally announced January 2014.

Comments: 10 pages, 3 figures, 1 table, references updated