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Site-polarized Mott phases competing with a correlated metal in twisted WSe$_2$
Authors:
Siheon Ryee,
Lennart Klebl,
Gautam Rai,
Ammon Fischer,
Valentin Crépel,
Lede Xian,
Angel Rubio,
Dante M. Kennes,
Roser Valentí,
Andrew J. Millis,
Antoine Georges,
Tim O. Wehling
Abstract:
Twisted WSe$_2$ hosts superconductivity, metal-insulator phase transitions, and field-controllable Fermi-liquid to non-Fermi-liquid transport properties. In this work, we use dynamical mean-field theory to provide a coherent understanding of the electronic correlations shaping the twisted WSe$_2$ phase diagram. We find a correlated metal competing with three distinct site-polarized correlated insu…
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Twisted WSe$_2$ hosts superconductivity, metal-insulator phase transitions, and field-controllable Fermi-liquid to non-Fermi-liquid transport properties. In this work, we use dynamical mean-field theory to provide a coherent understanding of the electronic correlations shaping the twisted WSe$_2$ phase diagram. We find a correlated metal competing with three distinct site-polarized correlated insulators; the competition is controlled by interlayer potential difference and interaction strength. The insulators are characterized by a strong differentiation between orbitals with respect to carrier concentration and effective correlation strength. Upon doping, a strong particle-hole asymmetry emerges, resulting from a Zaanen-Sawatzky-Allen-type charge-transfer mechanism. The associated charge-transfer physics and proximity to a van Hove singularity in the correlated metal sandwiched between two site-polarized insulators naturally explains the interlayer potential-driven metal-to-insulator transition, particle-hole asymmetry in transport, and the coherence-incoherence crossover in $3.65^\circ$ twisted WSe$_2$.
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Submitted 30 June, 2025; v1 submitted 27 June, 2025;
originally announced June 2025.
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Quantum melting of generalized electron crystal in twisted bilayer MoSe2
Authors:
Qi Jun Zong,
Haolin Wang,
Qi Zhang,
Xinle Cheng,
Yangchen He,
Qiaoling Xu,
Ammon Fischer,
Kenji Watanabe,
Takashi Taniguchi,
Daniel A. Rhodes,
Lede Xian,
Dante M. Kennes,
Angel Rubio,
Geliang Yu,
Lei Wang
Abstract:
Electrons can form an ordered solid crystal phase ascribed to the interplay between Coulomb repulsion and kinetic energy. Tuning these energy scales can drive a phase transition from electron solid to liquid, i.e. melting of Wigner crystal. Generalized Wigner crystals (GWCs) pinned to moire superlattices have been reported by optical and scanning-probe-based methods. Using transport measurements t…
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Electrons can form an ordered solid crystal phase ascribed to the interplay between Coulomb repulsion and kinetic energy. Tuning these energy scales can drive a phase transition from electron solid to liquid, i.e. melting of Wigner crystal. Generalized Wigner crystals (GWCs) pinned to moire superlattices have been reported by optical and scanning-probe-based methods. Using transport measurements to investigate GWCs is vital to a complete characterization, however, still poses a significant challenge due to difficulties in making reliable electrical contacts. Here, we report the electrical transport detection of GWCs at fractional fillings nu = 2/5, 1/2, 3/5, 2/3, 8/9, 10/9, and 4/3 in twisted bilayer MoSe2. We further observe that these GWCs undergo continuous quantum melting transitions to liquid phases by tuning doping density, magnetic and displacement fields, manifested by quantum critical scaling behaviors. Our findings establish twisted bilayer MoSe2 as a novel system to study strongly correlated states of matter and their quantum phase transitions.
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Submitted 23 May, 2025; v1 submitted 22 May, 2025;
originally announced May 2025.
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Theory of intervalley-coherent AFM order and topological superconductivity in tWSe$_2$
Authors:
Ammon Fischer,
Lennart Klebl,
Valentin Crépel,
Siheon Ryee,
Angel Rubio,
Lede Xian,
Tim O. Wehling,
Antoine Georges,
Dante M. Kennes,
Andrew J. Millis
Abstract:
The recent observation of superconductivity in the vicinity of insulating or Fermi surface reconstructed metallic states has established twisted bilayers of WSe$_2$ as an exciting platform to study the interplay of strong electron-electron interactions, broken symmetries and topology. In this work, we study the emergence of electronic ordering in twisted WSe$_2$ driven by gate-screened Coulomb int…
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The recent observation of superconductivity in the vicinity of insulating or Fermi surface reconstructed metallic states has established twisted bilayers of WSe$_2$ as an exciting platform to study the interplay of strong electron-electron interactions, broken symmetries and topology. In this work, we study the emergence of electronic ordering in twisted WSe$_2$ driven by gate-screened Coulomb interactions. Our first-principles treatment begins by constructing moiré Wannier orbitals that faithfully capture the bandstructure and topology of the system and project the gate-screened Coulomb interaction onto them. Using unbiased functional renormalization group calculations, we find an interplay between intervalley-coherent antiferromagnetic order and chiral, mixed-parity $d/p$-wave superconductivity for carrier concentrations near the displacement field-tunable van-Hove singularity. Our microscopic approach establishes incommensurate intervalley-coherent antiferromagnetic spin fluctuations as the dominant electronic mechanism driving the formation of superconductivity in $θ= 5.08^{\circ}$ twisted WSe$_2$ and demonstrates that nesting properties of the Fermi surface sheets near the higher-order van-Hove point cause an asymmetric density dependence of the spin ordering as the density is varied across the van-Hove line, in good agreement with experimental observations. We show how the region of superconducting and magnetic order evolves within the two-dimensional phase space of displacement field and electronic density as twist angle is varied between $4^{\circ} \dots 5^{\circ}$.
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Submitted 18 December, 2024;
originally announced December 2024.
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2D Theoretically Twistable Material Database
Authors:
Yi Jiang,
Urko Petralanda,
Grigorii Skorupskii,
Qiaoling Xu,
Hanqi Pi,
Dumitru Călugăru,
Haoyu Hu,
Jiaze Xie,
Rose Albu Mustaf,
Peter Höhn,
Vicky Haase,
Maia G. Vergniory,
Martin Claassen,
Luis Elcoro,
Nicolas Regnault,
Jie Shan,
Kin Fai Mak,
Dmitri K. Efetov,
Emilia Morosan,
Dante M. Kennes,
Angel Rubio,
Lede Xian,
Claudia Felser,
Leslie M. Schoop,
B. Andrei Bernevig
Abstract:
The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twi…
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The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moiré structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moiré modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moiré systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moiré heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moiré systems.
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Submitted 14 November, 2024;
originally announced November 2024.
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Two dimensional covalent moire superlattice from fluorinating twisted bilayer graphene
Authors:
Depeng Ji,
Qiaoling Xu,
Lede Xian
Abstract:
Moire materials exhibit diverse quantum properties such as superconductivity and correlated topo logical phases, making them ideal for studying strongly correlated systems. While moire materials are typically formed by stacking two-dimensional materials with interlayer interaction dominated by weak van der Waals (vdW) forces, we explore the possibility for constructing moire covalent super lattice…
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Moire materials exhibit diverse quantum properties such as superconductivity and correlated topo logical phases, making them ideal for studying strongly correlated systems. While moire materials are typically formed by stacking two-dimensional materials with interlayer interaction dominated by weak van der Waals (vdW) forces, we explore the possibility for constructing moire covalent super lattices by fluorinating twisted bilayer graphene. With first principle calculations, we demonstrate that fluorination of twisted bilayer graphene (TBG) can induce covalent bonds between adjacent layers, transforming the vdW-dominated interactions. This results in enhanced modulation of the electronic structure, with abundant flat bands across the spectrum. Our findings suggest that cova lent moire superlattices offer new platforms for exploring correlated quantum phenomena and moire covalent chemistry.
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Submitted 7 October, 2024;
originally announced October 2024.
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Engineering 2D square lattice Hubbard models in 90$^\circ$ twisted Ge/SnX (X=S, Se) moiré supperlattices
Authors:
Qiaoling Xu,
Nicolas Tancogne-Dejean,
Emil Viñas Boström,
Dante M. Kennes,
Martin Claassen,
Angel Rubio,
Lede Xian
Abstract:
Due to the large-period superlattices emerging in moiré two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup. While many investigations have thus far focused on moiré flat bands and emergent correlated electron physics in triangular, honeycomb and quasi-one-dimensional latt…
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Due to the large-period superlattices emerging in moiré two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup. While many investigations have thus far focused on moiré flat bands and emergent correlated electron physics in triangular, honeycomb and quasi-one-dimensional lattices, tunable moiré realizations of square lattices subject to strong correlations remain elusive. Here we propose a feasible scheme to construct moire square lattice systems by twisting two layers of 2D materials in a rectangular lattice by 90 degrees. We demonstrate such scheme with twisted Ge/SnX (X=S,Se) moiré superlattices and theoretical calculate their electronic structures from first principles. We show that the lowest conduction flat band in these systems can be described by a square lattice Hubbard model with parameters which can be controlled by varying the choice of host materials, number of layers, and external electric fields. In particular, twisted double bilayer GeSe realizes a square lattice Hubbard model with strong frustration due to the next nearest neighbour hopping that could lead to unconventional superconductivity, in close analogy to the Hubbard model for copper-oxygen planes of cuprate high-temperature superconductors. The basic concept of using 90-degree twisted 2D materials with rectangular unit cell to realize the square lattice Hubbard model works in general and therefore we establish those systems as tunable platforms to simulate correlation physics in such a geometries.
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Submitted 8 June, 2024;
originally announced June 2024.
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Room-temperature correlated states in twisted bilayer MoS$_2$
Authors:
Fanfan Wu,
Qiaoling Xu,
Qinqin Wang,
Yanbang Chu,
Lu Li,
Jian Tang,
Jieying Liu,
Jinpeng Tian,
Yiru Ji,
Le Liu,
Yalong Yuan,
Zhiheng Huang,
Jiaojiao Zhao,
Xiaozhou Zan,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Gangxu Gu,
Yang Xu,
Lede Xian,
Wei Yang,
Luojun Du,
Guangyu Zhang
Abstract:
Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator i…
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Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator in AB-stacked MoS$_2$ homo-bilayer moiré superlattices. Correlated insulating states at moiré band filling factors v = 1, 2, 3 are unambiguously established in twisted bilayer MoS$_2$. Remarkably, the correlated electronic states can persist up to a record-high critical temperature of over 285 K. The realization of room-temperature correlated states in twisted bilayer MoS$_2$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large non-linear Hall responses up to room-temperature are uncovered near correlated insulating states, demonstrating the quantum geometry of moiré flat conduction band.
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Submitted 28 November, 2023;
originally announced November 2023.
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Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures
Authors:
Niklas Hofmann,
Leonard Weigl,
Johannes Gradl,
Neeraj Mishra,
Giorgio Orlandini,
Stiven Forti,
Camilla Coletti,
Simone Latini,
Lede Xian,
Angel Rubio,
Dilan Perez Paredes,
Raul Perea Causin,
Samuel Brem,
Ermin Malic,
Isabella Gierz
Abstract:
Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros…
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Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters.
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Submitted 21 March, 2023;
originally announced March 2023.
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Ultrafast Spin Dynamics and Photoinduced Insulator-to-Metal Transition in $α$-$RuCl_3$
Authors:
Jin Zhang,
Nicolas Tancogne-Dejean,
Lede Xian,
Emil Vinas Boström,
Martin Claassen,
Dante M. Kennes,
Angel Rubio
Abstract:
Laser-induced ultrafast demagnetization is a phenomenon of utmost interest and attracts significant attention because it enables potential applications in ultrafast optoelectronics and spintronics. As a spin-orbit coupling assisted magnetic insulator, $α$-$RuCl_3$ provides an attractive platform to explore the physics of electronic correlations and related unconventional magnetism. Using time-depe…
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Laser-induced ultrafast demagnetization is a phenomenon of utmost interest and attracts significant attention because it enables potential applications in ultrafast optoelectronics and spintronics. As a spin-orbit coupling assisted magnetic insulator, $α$-$RuCl_3$ provides an attractive platform to explore the physics of electronic correlations and related unconventional magnetism. Using time-dependent density functional theory, we explore the ultrafast laser-induced dynamics of the electronic and magnetic structures in $α$-$RuCl_3$. Our study unveils that laser pulses can introduce ultrafast demagnetizations in $α$-$RuCl_3$, accompanied by an out-of-equilibrium insulator-to-metal transition in a few tens of femtoseconds. The spin response significantly depends on the laser wavelength and polarization on account of the electron correlations, band renormalizations and charge redistributions. These findings provide physical insights into the coupling between the electronic and magnetic degrees of freedom in $α$-$RuCl_3$ and shed light on suppressing the long-range magnetic orders and reaching a proximate spin liquid phase for two-dimensional magnets on an ultrafast timescale.
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Submitted 22 August, 2022;
originally announced August 2022.
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Moiré Engineering of Nonsymmorphic Symmetries and Hourglass Superconductors
Authors:
Yifan Gao,
Ammon Fischer,
Lennart Klebl,
Martin Claassen,
Angel Rubio,
Li Huang,
Dante Kennes,
Lede Xian
Abstract:
Moiré heterostructures hold the promise to provide platforms to tailor strongly correlated and topological states of matter. Here, we theoretically propose the emergence of an effective, rectangular moiré lattice in twisted bilayers of SnS with nonsymmorphic symmetry. Based on first-principles calculations, we demonstrate that strong intrinsic spin-orbit interactions render this tunable platform a…
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Moiré heterostructures hold the promise to provide platforms to tailor strongly correlated and topological states of matter. Here, we theoretically propose the emergence of an effective, rectangular moiré lattice in twisted bilayers of SnS with nonsymmorphic symmetry. Based on first-principles calculations, we demonstrate that strong intrinsic spin-orbit interactions render this tunable platform a moiré semimetal that hosts 2D hourglass fermions protected by time-reversal symmetry $\mathcal{T}$ and the nonsymmorphic screw rotation symmetry $\widetilde{\mathcal{C}}_{2y}$. We show that topological Fermi arcs connecting pairs of Weyl nodal points in the hourglass dispersion are preserved for weak electron-electron interactions, particularly in regions of superconducting order that emerge in the phase diagram of interaction strength and filling. Our work established moiré engineering as an inroad into the realm of correlated topological semimetals and may motivate further topology related researches in moiré heterostructures.
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Submitted 6 July, 2022;
originally announced July 2022.
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Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers
Authors:
Qinqin Wang,
Jian Tang,
Xiaomei Li,
Jinpeng Tian,
Jing Liang,
Na Li,
Depeng Ji,
Lede Xian,
Yutuo Guo,
Lu Li,
Qinghua Zhang,
Yanbang Chu,
Zheng Wei,
Yanchong Zhao,
Luojun Du,
Hua Yu Xuedong Bai,
Lin Gu,
Kaihui Liu,
Wei Yang,
Rong Yang,
Dongxia Shi,
Guangyu Zhang
Abstract:
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and cur…
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Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
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Submitted 17 March, 2022;
originally announced March 2022.
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Moiré Engineering of Spin-Orbit Coupling in Twisted Platinum Diselenide
Authors:
Lennart Klebl,
Qiaoling Xu,
Ammon Fischer,
Lede Xian,
Martin Claassen,
Angel Rubio,
Dante M. Kennes
Abstract:
We study the electronic structure and correlated phases of twisted bilayers of platinum diselenide using large-scale ab initio simulations combined with the functional renormalization group. PtSe$_2$ is a group-X transition metal dichalcogenide, which hosts emergent flat bands at small twist angles in the twisted bilayer. Remarkably, we find that moiré engineering can be used to tune the strength…
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We study the electronic structure and correlated phases of twisted bilayers of platinum diselenide using large-scale ab initio simulations combined with the functional renormalization group. PtSe$_2$ is a group-X transition metal dichalcogenide, which hosts emergent flat bands at small twist angles in the twisted bilayer. Remarkably, we find that moiré engineering can be used to tune the strength of Rashba spin-orbit interactions, altering the electronic behavior in a novel manner. We reveal that an effective triangular lattice with a twist-controlled ratio between kinetic and spin-orbit coupling scales can be realized. Even dominant spin-orbit coupling can be accessed in this way and we discuss consequences for the interaction driven phase diagram, which features pronounced exotic superconducting and entangled spin-charge density waves.
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Submitted 25 January, 2022;
originally announced January 2022.
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Ultra-Strong Spin-Orbit Coupling and Topological Moiré Engineering in Twisted ZrS2 Bilayers
Authors:
Martin Claassen,
Lede Xian,
Dante M. Kennes,
Angel Rubio
Abstract:
We predict that twisted bilayers of 1T-ZrS$_2$ realize a novel and tunable platform to engineer two-dimensional topological quantum phases dominated by strong spin-orbit interactions. At small twist angles, ZrS$_2$ heterostructures give rise to an emergent and twist-controlled moiré Kagomé lattice, combining geometric frustration and strong spin-orbit coupling to give rise to a moiré quantum spin…
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We predict that twisted bilayers of 1T-ZrS$_2$ realize a novel and tunable platform to engineer two-dimensional topological quantum phases dominated by strong spin-orbit interactions. At small twist angles, ZrS$_2$ heterostructures give rise to an emergent and twist-controlled moiré Kagomé lattice, combining geometric frustration and strong spin-orbit coupling to give rise to a moiré quantum spin Hall insulator with highly controllable and nearly-dispersionless bands. We devise a generic pseudo-spin theory for group-IV transition metal dichalcogenides that relies on the two-component character of the valence band maximum of the 1T structure at $Γ$, and study the emergence of a robust quantum anomalous Hall phase as well as possible fractional Chern insulating states from strong Coulomb repulsion at fractional fillings of the topological moiré Kagomé bands. Our results establish group-IV transition metal dichalcogenide bilayers as a novel moiré platform to realize strongly-correlated topological phases in a twist-tunable setting.
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Submitted 25 October, 2021;
originally announced October 2021.
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Moire flat bands in twisted 2D hexagonal vdW material
Authors:
Qiaoling Xu,
Yuzheng Guo,
Lede Xian
Abstract:
Moire superlattices in twisted bilayer graphene (TBG) and its derived structures can host exotic correlated quantum phenomena because the narrow moire flat minibands in those systems effectively enhance the electron-electron interaction. Correlated phenomena are also observed in 2H-transitional metal dichalcogenides moire superlattices. However, the number of moire systems that have been explored…
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Moire superlattices in twisted bilayer graphene (TBG) and its derived structures can host exotic correlated quantum phenomena because the narrow moire flat minibands in those systems effectively enhance the electron-electron interaction. Correlated phenomena are also observed in 2H-transitional metal dichalcogenides moire superlattices. However, the number of moire systems that have been explored in experiments are still very limited. Here we theoretically investigate a series of two-dimensional (2D) twisted bilayer hexagonal materials (TBHMs) beyond TBG at fixed angles of 7.34 and 67.34 degree with 22 2D van der Waals (vdW) layered materials that are commonly studied in experiments. First-principles calculations are employed to systemically study the moire minibands in these systems. We find that flat bands with narrow bandwidth generally exist in these systems. Some of the systems such as twisted bilayer In2Se3, InSe, GaSe, GaS and PtS2 even host ultra-flat bands with bandwidth less than 20 meV even for such large angles, which make them especially appealing for further experimental investigations. We further analysis the characters of moire flat bands and provides guidance for further exploration of 2D moire superlattices that could host strong electron correlations.
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Submitted 15 October, 2021;
originally announced October 2021.
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Spatially indirect intervalley excitons in bilayer WSe2
Authors:
Zhiheng Huang,
Yanchong Zhao,
Tao Bo,
Yanbang Chu,
Jinpeng Tian,
Le Liu,
Yalong Yuan,
Fanfan Wu,
Jiaojiao Zhao,
Lede Xian,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Luojun Du,
Zhipei Sun,
Sheng Meng,
Wei Yang,
Guangyu Zhang
Abstract:
Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon repli…
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Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.
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Submitted 20 August, 2021;
originally announced August 2021.
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Phonon-Enhanced Nonlinearities in Hexagonal Boron Nitride
Authors:
Jared S. Ginsberg,
M. Mehdi Jadidi,
Jin Zhang,
Cecilia Y. Chen,
Nicolas Tancogne-Dejean,
Sang Hoon Chae,
Gauri N. Patwardhan,
Lede Xian,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Angel Rubio,
Alexander L. Gaeta
Abstract:
We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant excitation. The resulting FWM signal allows for time-resolved observation of the crystal motion. In addition, we observe enhancements of third-harmonic generation…
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We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant excitation. The resulting FWM signal allows for time-resolved observation of the crystal motion. In addition, we observe enhancements of third-harmonic generation with resonant pumping at the hBN transverse optical phonon. Phonon-induced nonlinear enhancements are also predicted to yield large increases in high-harmonic efficiencies.
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Submitted 17 July, 2023; v1 submitted 26 July, 2021;
originally announced July 2021.
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Engineering Three Dimensional Moiré Flat Bands
Authors:
Lede Xian,
Ammon Fischer,
Martin Claassen,
Jin Zhang,
Angel Rubio,
Dante M. Kennes
Abstract:
We demonstrate that the concept of moiré flat bands can be generalized to achieve electronic band engineering in all three spatial dimensions. For many two dimensional van der Waals materials, twisting two adjacent layers with respect to each other leads to flat electronic bands in the two corresponding spatial directions -- a notion sometimes referred to as twistronics as it enables a wealth of p…
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We demonstrate that the concept of moiré flat bands can be generalized to achieve electronic band engineering in all three spatial dimensions. For many two dimensional van der Waals materials, twisting two adjacent layers with respect to each other leads to flat electronic bands in the two corresponding spatial directions -- a notion sometimes referred to as twistronics as it enables a wealth of physical phenomena. Within this two dimensional plane, large moiré patterns of nanometer size form. The basic concept we propose here is to stack multiple twisted layers on top of each other in a predefined pattern. If the pattern is chosen such that with respect to the stacking direction of layers, the large spatial moiré features are spatially shifted from one twisted layer to the next, the system exhibits twist angle controlled flat bands in all of the three spatial directions. With this, our proposal extends the use of twistronic to three dimensions. We exemplify the general concept by considering graphitic systems, boron nitride and WSe$_2$ as candidate materials, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride we develope an ab initio fitted tight binding model that captures the corresponding three dimensional low-energy electronic structure. We outline that interesting three dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states.
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Submitted 4 October, 2021; v1 submitted 17 December, 2020;
originally announced December 2020.
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Moiré heterostructures as a condensed matter quantum simulator
Authors:
Dante M. Kennes,
Martin Claassen,
Lede Xian,
Antoine Georges,
Andrew J. Millis,
James Hone,
Cory R. Dean,
D. N. Basov,
Abhay Pasupathy,
Angel Rubio
Abstract:
Twisted van der Waals heterostructures have latterly received prominent attention for their many remarkable experimental properties, and the promise that they hold for realising elusive states of matter in the laboratory. We propose that these systems can, in fact, be used as a robust quantum simulation platform that enables the study of strongly correlated physics and topology in quantum material…
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Twisted van der Waals heterostructures have latterly received prominent attention for their many remarkable experimental properties, and the promise that they hold for realising elusive states of matter in the laboratory. We propose that these systems can, in fact, be used as a robust quantum simulation platform that enables the study of strongly correlated physics and topology in quantum materials. Among the features that make these materials a versatile toolbox are the tunability of their properties through readily accessible external parameters such as gating, straining, packing and twist angle; the feasibility to realize and control a large number of fundamental many-body quantum models relevant in the field of condensed-matter physics; and finally, the availability of experimental readout protocols that directly map their rich phase diagrams in and out of equilibrium. This general framework makes it possible to robustly realize and functionalize new phases of matter in a modular fashion, thus broadening the landscape of accessible physics and holding promise for future technological applications.
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Submitted 16 February, 2021; v1 submitted 25 November, 2020;
originally announced November 2020.
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Universal moiré nematic phase in twisted graphitic systems
Authors:
Carmen Rubio-Verdú,
Simon Turkel,
Larry Song,
Lennart Klebl,
Rhine Samajdar,
Mathias S. Scheurer,
Jörn W. F. Venderbos,
Kenji Watanabe,
Takashi Taniguchi,
Héctor Ochoa,
Lede Xian,
Dante Kennes,
Rafael M. Fernandes,
Ángel Rubio,
Abhay N. Pasupathy
Abstract:
Graphene moiré superlattices display electronic flat bands. At integer fillings of these flat bands, energy gaps due to strong electron-electron interactions are generally observed. However, the presence of other correlation-driven phases in twisted graphitic systems at non-integer fillings is unclear. Here, we report scanning tunneling microscopy (STM) measurements that reveal the existence of th…
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Graphene moiré superlattices display electronic flat bands. At integer fillings of these flat bands, energy gaps due to strong electron-electron interactions are generally observed. However, the presence of other correlation-driven phases in twisted graphitic systems at non-integer fillings is unclear. Here, we report scanning tunneling microscopy (STM) measurements that reveal the existence of threefold rotational (C3) symmetry breaking in twisted double bilayer graphene (tDBG). Using spectroscopic imaging over large and uniform areas to characterize the direction and degree of C3 symmetry breaking, we find it to be prominent only at energies corresponding to the flat bands and nearly absent in the remote bands. We demonstrate that the C3 symmetry breaking cannot be explained by heterostrain or the displacement field, and is instead a manifestation of an interaction-driven electronic nematic phase, which emerges even away from integer fillings. Comparing our experimental data with a combination of microscopic and phenomenological modeling, we show that the nematic instability is not associated with the local scale of the graphene lattice, but is an emergent phenomenon at the scale of the moiré lattice, pointing to the universal character of this ordered state in flat band moiré materials.
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Submitted 24 September, 2020;
originally announced September 2020.
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Moiré metrology of energy landscapes in van der Waals heterostructures
Authors:
Dorri Halbertal,
Nathan R. Finney,
Sai S. Sunku,
Alexander Kerelsky,
Carmen Rubio-Verdú,
Sara Shabani,
Lede Xian,
Stephen Carr,
Shaowen Chen,
Charles Zhang,
Lei Wang,
Derick Gonzalez-Acevedo,
Alexander S. McLeod,
Daniel Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Cory R. Dean,
James C. Hone,
Abhay N. Pasupathy,
Dante M. Kennes,
Angel Rubio,
D. N. Basov
Abstract:
The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusiv…
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The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.
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Submitted 26 November, 2020; v1 submitted 11 August, 2020;
originally announced August 2020.
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Graphene/$α$-RuCl$_3$: An Emergent 2D Plasmonic Interface
Authors:
Daniel J. Rizzo,
Bjarke S. Jessen,
Zhiyuan Sun,
Francesco L. Ruta,
Jin Zhang,
Jia-Qiang Yan,
Lede Xian,
Alexander S. McLeod,
Michael E. Berkowitz,
Kenji Watanabe,
Takashi Taniguchi,
Stephen E. Nagler,
David G. Mandrus,
Angel Rubio,
Michael M. Fogler,
Andrew J. Millis,
James C. Hone,
Cory R. Dean,
D. N. Basov
Abstract:
Work function-mediated charge transfer in graphene/$α$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and edge plasmon-polaritons (SPPs and EPPs, respectively). Characterization of the SPP and EPP behavior as a function of frequency and temperature can be used to simult…
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Work function-mediated charge transfer in graphene/$α$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and edge plasmon-polaritons (SPPs and EPPs, respectively). Characterization of the SPP and EPP behavior as a function of frequency and temperature can be used to simultaneously probe the magnitude of interlayer charge transfer while extracting the optical response of the interfacial doped $α$-RuCl$_3$. We accomplish this using scanning near-field optical microscopy (SNOM) in conjunction with first-principles DFT calculations. This reveals massive interlayer charge transfer (2.7 $\times$ 10$^{13}$ cm$^{-2}$) and enhanced optical conductivity in $α$-RuCl$_3$ as a result of significant electron doping. Our results provide a general strategy for generating highly-doped plasmonic interfaces in the 2D limit in a scanning probe-accessible geometry without need of an electrostatic gate.
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Submitted 14 July, 2020;
originally announced July 2020.
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Nonlinear twistoptics at symmetry-broken interfaces
Authors:
Kaiyuan Yao,
Nathan R. Finney,
Jin Zhang,
Samuel L. Moore,
Lede Xian,
Nicolas Tancogne-Dejean,
Fang Liu,
Jenny Ardelean,
Xinyi Xu,
Dorri Halbertal,
K. Watanabe,
T. Taniguchi,
Hector Ochoa,
Ana Asenjo-Garcia,
Xiaoyang Zhu,
D. N. Basov,
Angel Rubio,
Cory R. Dean,
James Hone,
P. James Schuck
Abstract:
Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostru…
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Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.
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Submitted 20 August, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Realization of Nearly Dispersionless Bands with Strong Orbital Anisotropy from Destructive Interference in Twisted Bilayer MoS2
Authors:
Lede Xian,
Martin Claassen,
Dominik Kiese,
Michael M. Scherer,
Simon Trebst,
Dante M. Kennes,
Angel Rubio
Abstract:
Recently, the twist angle between adjacent sheets of stacked van der Waals materials emerged as a new knob to engineer correlated states of matter in two-dimensional heterostructures in a controlled manner, giving rise to emergent phenomena such as superconductivity or correlated insulating states. Here,we use an ab initio based approach to characterize the electronic properties of twisted bilayer…
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Recently, the twist angle between adjacent sheets of stacked van der Waals materials emerged as a new knob to engineer correlated states of matter in two-dimensional heterostructures in a controlled manner, giving rise to emergent phenomena such as superconductivity or correlated insulating states. Here,we use an ab initio based approach to characterize the electronic properties of twisted bilayer MoS2. We report that, in marked contrast to twisted bilayer graphene, slightly hole-doped MoS2 realizes a strongly asymmetric px-py Hubbard model on the honeycomb lattice, with two almost entirely dispersionless bands emerging due to destructive interference. We study the collective behavior of twisted bilayer MoS2 in the presence of interactions, and characterize an array of different magnetic and orbitally-ordered correlated phases,which may be susceptible to quantum fluctuations giving rise to exotic, purely quantum, states of matter.
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Submitted 6 April, 2020;
originally announced April 2020.
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Light-induced renormalization of the Dirac quasiparticles in the nodal-line semimetal ZrSiSe
Authors:
G. Gatti,
A. Crepaldi,
M. Puppin,
N. Tancogne-Dejean,
L. Xian,
S. Roth,
S. Polishchuk,
Ph. Bugnon,
A. Magrez,
H. Berger,
F. Frassetto,
L. Poletto,
L. Moreschini,
S. Moser,
A. Bostwick,
E. Rotenberg,
A. Rubio,
M. Chergui,
M. Grioni
Abstract:
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelec…
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In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. Here we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelectron spectroscopy with ab initio density functional theory (DFT) complemented by an extended Hubbard model (DFT +U +V). We show that electronic correlations are reduced on an ultrashort timescale by optical excitation of high-energy electrons-hole pairs, which transiently screen the Coulomb interaction. Our findings demonstrate an all-optical method for engineering the band structure of a quantum material.
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Submitted 20 December, 2019;
originally announced December 2019.
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Moiré-less Correlations in ABCA Graphene
Authors:
Alexander Kerelsky,
Carmen Rubio-Verdú,
Lede Xian,
Dante M. Kennes,
Dorri Halbertal,
Nathan Finney,
Larry Song,
Simon Turkel,
Lei Wang,
K. Watanabe,
T. Taniguchi,
James Hone,
Cory Dean,
Dmitri Basov,
Angel Rubio,
Abhay N. Pasupathy
Abstract:
Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform towards achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene - a simple material that also exhibits a flat electronic band but without the…
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Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform towards achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene - a simple material that also exhibits a flat electronic band but without the need of having a moiré superlattice induced by twisted van der Waals layers. We show that two layers of bilayer graphene that are twisted by an arbitrary tiny angle host large (micron-scale) regions of uniform rhombohedral four-layer (ABCA) graphene that can be independently studied. Scanning tunneling spectroscopy reveals that ABCA graphene hosts an unprecedentedly sharp flat band of 3-5 meV half-width. We demonstrate that when this flat band straddles the Fermi level, a correlated many-body gap emerges with peak-to-peak value of 9.5 meV at charge neutrality. Mean field theoretical calculations indicate that the two primary candidates for the appearance of this broken symmetry state are a charge transfer excitonic insulator and a ferrimagnet. Finally, we show that ABCA graphene hosts surface topological helical edge states at natural interfaces with ABAB graphene which can be turned on and off with gate voltage, implying that small angle twisted double bilayer graphene is an ideal programmable topological quantum material.
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Submitted 5 November, 2019; v1 submitted 31 October, 2019;
originally announced November 2019.
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Magic continuum in twisted bilayer WSe2
Authors:
Lei Wang,
En-Min Shih,
Augusto Ghiotto,
Lede Xian,
Daniel A. Rhodes,
Cheng Tan,
Martin Claassen,
Dante M. Kennes,
Yusong Bai,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoyang Zhu,
James Hone,
Angel Rubio,
Abhay Pasupathy,
Cory R. Dean
Abstract:
Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental obse…
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Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental observation of similar correlated phenomena in twisted bilayer tungsten diselenide (tWSe2), a semiconducting transition metal dichalcogenide (TMD). Unlike twisted bilayer graphene where the flat band appears only within a narrow range around a "magic angle", we observe correlated states over a continuum of angles, spanning 4 degree to 5.1 degree. A Mott-like insulator appears at half band filling that can be sensitively tuned with displacement field. Hall measurements supported by ab initio calculations suggest that the strength of the insulator is driven by the density of states at half filling, consistent with a 2D Hubbard model in a regime of moderate interactions. At 5.1 degree twist, we observe evidence of superconductivity upon doping away from half filling, reaching zero resistivity around 3 K. Our results establish twisted bilayer TMDs as a model system to study interaction-driven phenomena in flat bands with dynamically tunable interactions.
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Submitted 26 October, 2019;
originally announced October 2019.
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Topological Floquet Engineering of Twisted Bilayer Graphene
Authors:
Gabriel E. Topp,
Gregor Jotzu,
James W. McIver,
Lede Xian,
Angel Rubio,
Michael A. Sentef
Abstract:
We investigate the topological properties of Floquet-engineered twisted bilayer graphene above the magic angle driven by circularly polarized laser pulses. Employing a full Moiré-unit-cell tight-binding Hamiltonian based on first-principles electronic structure we show that the band topology in the bilayer, at twisting angles above 1.05$^\circ$, essentially corresponds to the one of single-layer g…
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We investigate the topological properties of Floquet-engineered twisted bilayer graphene above the magic angle driven by circularly polarized laser pulses. Employing a full Moiré-unit-cell tight-binding Hamiltonian based on first-principles electronic structure we show that the band topology in the bilayer, at twisting angles above 1.05$^\circ$, essentially corresponds to the one of single-layer graphene. However, the ability to open topologically trivial gaps in this system by a bias voltage between the layers enables the full topological phase diagram to be explored, which is not possible in single-layer graphene. Circularly polarized light induces a transition to a topologically nontrivial Floquet band structure with the Berry curvature of a Chern insulator. Importantly, the twisting allows for tuning electronic energy scales, which implies that the electronic bandwidth can be tailored to match realistic driving frequencies in the ultraviolet or mid-infrared photon-energy regimes. This implies that Moiré superlattices are an ideal playground for combining twistronics, Floquet engineering, and strongly interacting regimes out of thermal equilibrium.
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Submitted 28 June, 2019;
originally announced June 2019.
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One-dimensional flat bands in twisted bilayer germanium selenide
Authors:
D. M. Kennes,
L. Xian,
M. Claassen,
A. Rubio
Abstract:
Experimental advances in the fabrication and characterization of few-layer materials stacked at a relative twist of small angle have recently shown the emergence of flat energy bands. As a consequence electron interactions become relevant, providing inroads into the physics of strongly correlated two-dimensional systems. Here, we demonstrate by combining large scale ab initio simulations with nume…
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Experimental advances in the fabrication and characterization of few-layer materials stacked at a relative twist of small angle have recently shown the emergence of flat energy bands. As a consequence electron interactions become relevant, providing inroads into the physics of strongly correlated two-dimensional systems. Here, we demonstrate by combining large scale ab initio simulations with numerically exact strong correlation approaches that an effective one-dimensional system emerges upon stacking two twisted sheets of GeSe, in marked contrast to all Moiré systems studied so far. This not only allows to study the necessarily collective nature of excitations in one dimension, but can also serve as a promising platform to scrutinize the crossover from two to one dimension in a controlled setup by varying the twist angle, which provides an intriguing benchmark with respect to theory. We thus establish twisted bilayer GeSe as an intriguing inroad into the strongly correlated physics of low-dimensional systems.
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Submitted 28 February, 2020; v1 submitted 10 May, 2019;
originally announced May 2019.
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Magic Angle Spectroscopy
Authors:
Alexander Kerelsky,
Leo McGilly,
Dante M. Kennes,
Lede Xian,
Matthew Yankowitz,
Shaowen Chen,
K. Watanabe,
T. Taniguchi,
James Hone,
Cory Dean,
Angel Rubio,
Abhay N. Pasupathy
Abstract:
The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moiré superlattice potentials arising from an interlayer twist between crystals. Moiré-tuning of the band structure has led to the recent discovery of superconductivity and correlated insulating phases in twisted bilayer graphene (TBLG) near the so-called "magic angle" of…
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The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moiré superlattice potentials arising from an interlayer twist between crystals. Moiré-tuning of the band structure has led to the recent discovery of superconductivity and correlated insulating phases in twisted bilayer graphene (TBLG) near the so-called "magic angle" of $\sim$1.1°, with a phase diagram reminiscent of high T$_c$ superconductors. However, lack of detailed understanding of the electronic spectrum and the atomic-scale influence of the Moiré pattern has so far precluded a coherent theoretical understanding of the correlated states. Here, we directly map the atomic-scale structural and electronic properties of TBLG near the magic angle using scanning tunneling microscopy and spectroscopy (STM/STS). We observe two distinct van Hove singularities (vHs) in the LDOS which decrease in separation monotonically through 1.1° with the bandwidth (t) of each vHs minimized near the magic angle. When doped near half Moiré band filling, the conduction vHs shifts to the Fermi level and an additional correlation-induced gap splits the vHs with a maximum size of 7.5 meV. We also find that three-fold (C$_3$) rotational symmetry of the LDOS is broken in doped TBLG with a maximum symmetry breaking observed for states near the Fermi level, suggestive of nematic electronic interactions. The main features of our doping and angle dependent spectroscopy are captured by a tight-binding model with on-site (U) and nearest neighbor Coulomb interactions. We find that the ratio U/t is of order unity, indicating that electron correlations are significant in magic angle TBLG. Rather than a simple maximization of the DOS, superconductivity arises in TBLG at angles where the ratio U/t is largest, suggesting a pairing mechanism based on electron-electron interactions.
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Submitted 26 December, 2018; v1 submitted 20 December, 2018;
originally announced December 2018.
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Multi-flat bands and strong correlations in Twisted Bilayer Boron Nitride
Authors:
Lede Xian,
Dante M. Kennes,
Nicolas Tancogne-Dejean,
Massimo Altarelli,
Angel Rubio
Abstract:
In a groundbreaking experimental advance it was recently shown that by stacking two sheets of graphene atop of each other at a twist angle close to one of the so called "magic angles", an effective two-dimensional correlated system emerges. In this system the kinetic energy of the low-energy electrons is much reduced and consequently interactions become very relevant, providing a new platform into…
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In a groundbreaking experimental advance it was recently shown that by stacking two sheets of graphene atop of each other at a twist angle close to one of the so called "magic angles", an effective two-dimensional correlated system emerges. In this system the kinetic energy of the low-energy electrons is much reduced and consequently interactions become very relevant, providing a new platform into the physics of two-dimensional correlated materials. Evidence of a proposed Mott insulating as well as superconducting state in these highly tunable systems has spurred much attention as they could pave the way to understanding long-standing questions of high-$T_c$ superconductivity or provide candidate systems for topological chiral superconductors; key to highly relevant quantum technologies. Here, we demonstrate that twisted bilayer boron nitride (TBBN) is an exciting and even richer alternative to twisted bilayer graphene (TBG). Crucially, we show that in TBBN multiple flat bands emerge without having to fine tuning close to a "magic angle" that upon doping lead to correlated phases of matter (insulating and superconducting). TBBN could thus be much less sensitive to small deviations in the twist angle and therefore provide a particularly suited experimental platform to study correlation physics in two dimensions. Furthermore, we find that in marked contrast to TBG at small twist angle families of 2,4 and 6-fold degenerate, well separated, bands emerge within the gap, considerably broadening the addressable physics.
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Submitted 19 December, 2018;
originally announced December 2018.
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Square selenene and tellurene: novel group VI elemental 2D semi-Dirac materials and topological insulators
Authors:
Lede Xian,
Alejandro Pérez Paz,
Elisabeth Bianco,
Pulickel M. Ajayan,
Angel Rubio
Abstract:
With first principles calculations, we predict a novel stable 2D layered structure for group VI elements Se and Te that we call square selenene and square tellurene, respectively. They have chair-like buckled structures similar to other layered materials such as silicene and germanene but with a square unit cell rather than hexagonal. This special structure gives rise to anisotropic band dispersio…
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With first principles calculations, we predict a novel stable 2D layered structure for group VI elements Se and Te that we call square selenene and square tellurene, respectively. They have chair-like buckled structures similar to other layered materials such as silicene and germanene but with a square unit cell rather than hexagonal. This special structure gives rise to anisotropic band dispersions near the Fermi level that can be described by a generalized semi-Dirac Hamiltonian. We show that the considerably large band gap ($\sim$0.1 eV) opened by spin-orbit coupling makes square selenene and tellurene topological insulators, hosting non-trivial edge states. Therefore, square selenene and tellurene are promising materials for novel electronic and spintronic applications. Finally, we show that this new type of 2D elemental material can potentially be grown on proper substrates, such as a Au(100) surface.
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Submitted 6 July, 2016;
originally announced July 2016.
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Instantaneous band gap collapse in photoexcited monoclinic VO$_2$ due to photocarrier doping
Authors:
Daniel Wegkamp,
Marc Herzog,
Lede Xian,
Matteo Gatti,
Pierluigi Cudazzo,
Christina L. McGahan,
Robert E. Marvel,
Richard F. Haglund Jr.,
Angel Rubio,
Martin Wolf,
Julia Stähler
Abstract:
Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, we exclude an 80 femtosecond structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO$_2$ bandgap to variati…
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Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, we exclude an 80 femtosecond structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO$_2$ bandgap to variations of the dynamically screened Coulomb interaction, supporting a fully electronically driven isostructral insulator-to-metal transition. We thus conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening \emph{before} significant hot-carrier relaxation or ionic motion has occurred.
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Submitted 10 October, 2014; v1 submitted 14 August, 2014;
originally announced August 2014.
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The atomic structure of the $\sqrt{3} \times \sqrt{3}$ phase of silicene on Ag(111)
Authors:
Seymur Cahangirov,
Veli Ongun Özçelik,
Lede Xian,
Jose Avila,
Suyeon Cho,
María C. Asensio,
Salim Ciraci,
Angel Rubio
Abstract:
The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows exce…
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The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of $\sqrt{3} \times \sqrt{3}$ structures from $3 \times 3$ structures on Ag substrate. We show that the $\sqrt{3} \times \sqrt{3}$ reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon.
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Submitted 11 July, 2014;
originally announced July 2014.
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Stable two-dimensional dumbbell stanene: a quantum spin Hall insulator
Authors:
Peizhe Tang,
Pengcheng Chen,
Wendong Cao,
Huaqing Huang,
Seymur Cahangirov,
Lede Xian,
Yong Xu,
Shou-Cheng Zhang,
Wenhui Duan,
Angel Rubio
Abstract:
We predict from first-principles calculations a novel structure of stanene with dumbbell units (DB), and show that it is a two-dimensional topological insulator with inverted band gap which can be tuned by compressive strain. Furthermore, we propose that the boron nitride sheet and reconstructed ($2\times2$) InSb(111) surfaces are ideal substrates for the experimental realization of DB stanene, ma…
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We predict from first-principles calculations a novel structure of stanene with dumbbell units (DB), and show that it is a two-dimensional topological insulator with inverted band gap which can be tuned by compressive strain. Furthermore, we propose that the boron nitride sheet and reconstructed ($2\times2$) InSb(111) surfaces are ideal substrates for the experimental realization of DB stanene, maintaining its non-trivial topology. Combined with standard semiconductor technologies, such as magnetic doping and electrical gating, the quantum anomalous Hall effect, Chern half metallicity and topological superconductivity can be realized in DB stanene on those substrates. These properties make the two-dimensional supported stanene a good platform for the study of new quantum spin Hall insulator as well as other exotic quantum states of matter.
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Submitted 7 July, 2014;
originally announced July 2014.
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Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
Authors:
M. E. Dávila,
L. Xian,
S. Cahangirov,
A. Rubio,
G. Le Lay
Abstract:
Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111) templates. One of the phases, forming large domains, as observed in Scanning Tunneling Microscopy, shows a clear, nearly flat, honeycomb structure. Thanks to thorou…
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Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111) templates. One of the phases, forming large domains, as observed in Scanning Tunneling Microscopy, shows a clear, nearly flat, honeycomb structure. Thanks to thorough synchrotron radiation core-level spectroscopy measurements and advanced Density Functional Theory calculations we can identify it to a $\sqrt{3}$x$\sqrt{3}$R(30°) germanene layer in coincidence with a $\sqrt{7}$x$\sqrt{7}$R(19.1°) Au(111) supercell, thence, presenting the first compelling evidence of the birth of a novel synthetic germanium-based cousin of graphene.
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Submitted 10 June, 2014;
originally announced June 2014.
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Structural and Electronic Properties of Oxidized Graphene
Authors:
Jia-An Yan,
Lede Xian,
M. Y. Chou
Abstract:
We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield an LDA band gap over a range of a few…
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We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield an LDA band gap over a range of a few eV. These results suggest the possibility of creating and tuning the band gap in graphene by varying the oxidation level and the relative amount of epoxide and hydroxyl functional groups on the surface.
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Submitted 21 August, 2009;
originally announced August 2009.