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Self-heating electrochemical memory for high-precision analog computing
Authors:
Adam L. Gross,
Sangheon Oh,
François Léonard,
Wyatt Hodges,
T. Patrick Xiao,
Joshua D. Sugar,
Jacklyn Zhu,
Sritharini Radhakrishnan,
Sangyong Lee,
Jolie Wang,
Adam Christensen,
Sam Lilak,
Patrick S. Finnegan,
Patrick Crandall,
Christopher H. Bennett,
William Wahby,
Robin Jacobs-Gedrim,
Matthew J. Marinella,
Suhas Kumar,
Sapan Agarwal,
Yiyang Li,
A. Alec Talin,
Elliot J. Fuller
Abstract:
Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing neces…
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Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing necessitates a fundamental rethinking of computation at the material level, where information is stored as continuously variable physical observables. This shift introduces challenges related to the precision, dynamic range, and reliability of analog devices - issues that have hindered the development of existing memory technology for use in analog computers. Here, we address these issues in the context of memory which stores information as resistance. Our approach utilizes an electrochemical cell to tune the bulk oxygen-vacancy concentration within a metal oxide film. Through leveraging the gate contact as both a heater and source of electrochemical currents, kinetic barriers are overcome to enable a dynamic range of nine decades of analog tunable resistance, more than 3,000 available states, and programming with voltages less than 2 V. Furthermore, we demonstrate deterministic write operations with high precision, current-voltage linearity across six decades, and programming speeds as fast as 15 ns. These characteristics pave the way toward low-power analog computers with potential to improve AI efficiency by orders of magnitude.
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Submitted 21 May, 2025;
originally announced May 2025.
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Visualization Analysis and Impedance Analysis for the Aging Behavior Assessment of 18650 Cells
Authors:
Yihan Shi,
Qingrui Pan,
Jitao Li,
Xiaoze Shi,
Youchang Wang,
Peng Xiao
Abstract:
This work presents a comprehensive study on the aging behavior of 18650-type lithium-ion batteries, focusing on the uneven intercalation of lithium ions during fast charging processes. It introduces a novel approach using color visual recognition technology to analyze color changes in the graphite anode, indicative of lithiation levels. The study employs X-ray diffraction (XRD) and Distribution of…
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This work presents a comprehensive study on the aging behavior of 18650-type lithium-ion batteries, focusing on the uneven intercalation of lithium ions during fast charging processes. It introduces a novel approach using color visual recognition technology to analyze color changes in the graphite anode, indicative of lithiation levels. The study employs X-ray diffraction (XRD) and Distribution of Relaxation Time (DRT) techniques to validate and analyze the observations. The study emphasizes the significance of electrode impedance, the positioning of battery tabs, and electrolyte distribution in influencing the aging dynamics of lithium-ion batteries. Furthermore, the paper presents an innovative impedance Transport-Line Model, specifically developed to capture the evolution of polarization impedance over time. This model offers a deeper understanding of the internal mechanisms driving battery aging, providing valuable insights for the design and optimization of lithium-ion batteries. The research represents a significant contribution to the field, shedding light on the complex aging processes in lithium-ion batteries, particularly under the conditions of fast charging. This could lead to improved battery performance, longevity, and safety, which are critical for the wide range of applications that depend on these energy storage systems.
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Submitted 16 April, 2025;
originally announced April 2025.
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ReGNet: Reciprocal Space-Aware Long-Range Modeling for Crystalline Property Prediction
Authors:
Jianan Nie,
Peiyao Xiao,
Kaiyi Ji,
Peng Gao
Abstract:
Predicting properties of crystals from their structures is a fundamental yet challenging task in materials science. Unlike molecules, crystal structures exhibit infinite periodic arrangements of atoms, requiring methods capable of capturing both local and global information effectively. However, most current works fall short of capturing long-range interactions within periodic structures. To addre…
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Predicting properties of crystals from their structures is a fundamental yet challenging task in materials science. Unlike molecules, crystal structures exhibit infinite periodic arrangements of atoms, requiring methods capable of capturing both local and global information effectively. However, most current works fall short of capturing long-range interactions within periodic structures. To address this limitation, we leverage \emph{reciprocal space} to efficiently encode long-range interactions with learnable filters within Fourier transforms. We introduce Reciprocal Geometry Network (ReGNet), a novel architecture that integrates geometric GNNs and reciprocal blocks to model short-range and long-range interactions, respectively. Experimental results on JARVIS, Materials Project, and MatBench demonstrate that ReGNet achieves state-of-the-art predictive accuracy across a range of crystal property prediction tasks. Additionally, we explore a model extension that employs the mixture-of-experts for multi-property prediction with promising results and high computational efficiency. These findings highlight the potential of our model as a scalable and accurate solution for crystal property prediction. The code will be released upon paper acceptance.
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Submitted 27 May, 2025; v1 submitted 4 February, 2025;
originally announced February 2025.
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Thermal Induced Structural Competitiveness and Metastability of Body-centered Cubic Iron under Non-Equilibrium Conditions
Authors:
Shuai Zhang,
Aliza Panjwani,
Penghao Xiao,
Maitrayee Ghosh,
Tadashi Ogitsu,
Yuan Ping,
S. X. Hu
Abstract:
The structure and stability of iron near melting at multi-megabar pressures are of significant interest in high pressure physics and earth and planetary sciences. While the body-centered cubic (BCC) phase is generally recognized as unstable at lower temperatures, its stability relative to the hexagonal close-packed (HCP) phase at high temperatures (approximately 0.5 eV) in the Earth's inner core (…
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The structure and stability of iron near melting at multi-megabar pressures are of significant interest in high pressure physics and earth and planetary sciences. While the body-centered cubic (BCC) phase is generally recognized as unstable at lower temperatures, its stability relative to the hexagonal close-packed (HCP) phase at high temperatures (approximately 0.5 eV) in the Earth's inner core (IC) remains a topic of ongoing theoretical and experimental debate. Our ab initio calculations show a significant drop in energy, the emergence of a plateau and a local minimum in the potential energy surface, and stabilization of all phonon modes at elevated electron temperatures (>1-1.5 eV). These effects increase the competition among the BCC, HCP, and the face-centered cubic (FCC) phases and lead to the metastability of the BCC structure. Furthermore, the thermodynamic stability of BCC iron is enhanced by its substantial lattice vibration entropy. This thermally induced structural competitiveness and metastability under non-equilibrium conditions provide a clear theoretical framework for understanding iron phase relations and solidification processes, both experimentally and in the IC.
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Submitted 31 December, 2024;
originally announced January 2025.
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Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%
Authors:
Xiao Chen,
Xiaoxuan Shu,
Jiangcheng Zhou,
Lei Wan,
Peng Xiao,
Yuchen Fu,
Junzhi Ye,
Yi-Teng Huang,
Bin Yan,
Dingjiang Xue,
Tao Chen,
Jiejie Chen,
Robert L. Z. Hoye,
Ru Zhou
Abstract:
Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-qualit…
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Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting.
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Submitted 10 June, 2024;
originally announced June 2024.
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Unveiling the Impact of B-site Distribution on the Frustration Effect in Double Perovskite Ca2FeReO6 Using Monte Carlo Simulation and Molecular Field Theory
Authors:
Guoqing Liu,
Jiajun Mo,
Zeyi Lu,
Qinghang Zhang,
Puyue Xia,
Min Liu
Abstract:
This work systematically investigates the spin glass behavior of the double perovskite Ca2FeReO6. Building on previous studies, we have developed a formula to quantify the ions distribution at B-site, incorporating the next-nearest neighbor interactions. Employing molecular field theory and Monte Carlo simulations, the influence of various arrangements of two B-site ions on frustration effects was…
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This work systematically investigates the spin glass behavior of the double perovskite Ca2FeReO6. Building on previous studies, we have developed a formula to quantify the ions distribution at B-site, incorporating the next-nearest neighbor interactions. Employing molecular field theory and Monte Carlo simulations, the influence of various arrangements of two B-site ions on frustration effects was uncovered. B-site is segmented into a and b-site, defining the number of nearest neighbors from Fea to Feb (and vice versa) as Zx(Zy). The significant frustration effects occur when 1<Zx(or Zy)<3, with Zx is not equal to Zy and also when Zx(or Zy) ~ 3 while Zy(or Zx) ~ 4. All of these are reflected in the variations observed in ground state magnetization and the Thermal Energy Step relation to Zx and Zy. The model proposed in this work can be applied to most B-site disordered in perovskite systems and even to other chemically disordered in frustrated systems.
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Submitted 29 April, 2024;
originally announced April 2024.
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Atomistic origins of asymmetric charge-discharge kinetics in off-stoichiometric LiNiO$_2$
Authors:
Penghao Xiao,
Ning Zhang,
Harold Smith Perez,
Minjoon Park
Abstract:
LiNiO$_2$ shows poor Li transport kinetics at the ends of charge and discharge in the first cycle, which significantly reduces its available capacity in practice. The atomistic origins of these kinetic limits have not been fully understood. Here, we examine Li transport in LiNiO$_2$ by first-principles-based kinetic Monte Carlo simulations where both long time scale and large length scale are achi…
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LiNiO$_2$ shows poor Li transport kinetics at the ends of charge and discharge in the first cycle, which significantly reduces its available capacity in practice. The atomistic origins of these kinetic limits have not been fully understood. Here, we examine Li transport in LiNiO$_2$ by first-principles-based kinetic Monte Carlo simulations where both long time scale and large length scale are achieved, enabling direct comparison with experiments. Our results reveal the rate-limiting steps at both ends of the voltage scan and distinguish the differences between charge and discharge at the same Li content. The asymmetric effects of excess Ni in the Li layer (Ni$_\textrm{Li}$) are also captured in our unified modelling framework. In the low voltage region, the first cycle capacity loss due to high overpotential at the end of discharge is reproduced without empirical input. While the Li concentration gradient is found responsible for the low overpotential during charge at this state of charge. Ni$_\textrm{Li}$ increases the overpotential of discharge but not charge because it only impedes Li diffusion in a particular range of Li concentration and does not change the equilibrium voltage profile. The trends from varying the amount of Ni$_\textrm{Li}$ and temperature agree with experiments. In the high voltage region, charge becomes the slower process. The bottleneck becomes moving a Li from the Li-rich phase (H2) into the Li-poor phase (H3), while the Li hopping barriers in both phases are relatively low. The roles of preexisting nucleation sites and Ni$_\textrm{Li}$ are discussed. These results provide new atomistic insights of the kinetic hindrances, paving the road to unleash the full potential of high-Ni layered oxide cathodes.
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Submitted 10 November, 2023;
originally announced November 2023.
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Discovery of smectic charge and pair-density-wave orders in topological monolayer 1T$^\prime$-MoTe$_2$
Authors:
Li-Xuan Wei,
Peng-Cheng Xiao,
Fangsen Li,
Li Wang,
Bo-Yuan Deng,
Fang-Jun Cheng,
Fa-Wei Zheng,
Ning Hao,
Ping Zhang,
Xu-Cun Ma,
Qi-Kun Xue,
Can-Li Song
Abstract:
Electronic liquid-crystal phases are observed in numerous strongly-correlated systems including high-temperature superconductors. However, identifying these exotic phases and understanding their interplay with superconductivity in topological materials remain challenging. Here we employ a cryogenic scanning tunneling microscopy to discover a smectic (stripe) charge order (CO) and a primary pair-de…
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Electronic liquid-crystal phases are observed in numerous strongly-correlated systems including high-temperature superconductors. However, identifying these exotic phases and understanding their interplay with superconductivity in topological materials remain challenging. Here we employ a cryogenic scanning tunneling microscopy to discover a smectic (stripe) charge order (CO) and a primary pair-density-wave (PDW) in topological monolayer 1T$^\prime$-MoTe$_2$. The two orders are spatially modulated unidirectionally at the same wavevector, but have a marked spatial phase difference of about 2$π$/5. Importantly, the primary PDW state features a two-gap superconductivity below the transition temperature of 6.0 K and induces another unique particle-hole-symmetric CO at twice the PDW wavevector. Combining these results and our density functional calculations, we reveal that the two smectic orders are primarily driven by nesting behaviors between electron and hole pockets. Our findings establish monolayer 1T$^\prime$-MoTe$_2$ as a topological paradigm for exploring electronic smecticity, which intertwines with multiple preexisting symmetry-breaking states.
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Submitted 5 April, 2024; v1 submitted 21 August, 2023;
originally announced August 2023.
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Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Authors:
Emigdio Chavez-Angel,
Polychronis Tsipas,
Peng Xiao,
Mohammad Taghi Ahmadi,
Abdalghani Daaoub,
Hatef Sadeghi,
Clivia M. Sotomayor Torres,
Athanasios Dimoulas,
Alexandros El Sachat
Abstract:
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating ultra-thin thermal metamaterials based on crystalline lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistan…
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Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating ultra-thin thermal metamaterials based on crystalline lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m^2K/GW) and ultralow cross-plane thermal conductivities (0.01-0.07 Wm^-1K^-1) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.
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Submitted 10 March, 2023;
originally announced March 2023.
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Parallel Matrix Multiplication Using Voltage Controlled Magnetic Anisotropy Domain Wall Logic
Authors:
Nicholas Zogbi,
Samuel Liu,
Christopher H. Bennett,
Sapan Agarwal,
Matthew J. Marinella,
Jean Anne C. Incorvia,
T. Patrick Xiao
Abstract:
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage controlled magnetic anisotropy (VCMA) to improve the reliability of logical conc…
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The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage controlled magnetic anisotropy (VCMA) to improve the reliability of logical concatenation in the presence of realistic process variations. VCMA creates potential wells that allow for reliable and repeatable localization of domain walls. The DW-MTJ logic gate supports different fanouts, allowing for multiple inputs and outputs for a single device without affecting area. We simulate a systolic array of DW-MTJ Multiply-Accumulate (MAC) units with 4-bit and 8-bit precision, which uses the nonvolatility of DW-MTJ logic gates to enable fine-grained pipelining and high parallelism. The DW-MTJ systolic array provides comparable throughput and efficiency to state-of-the-art CMOS systolic arrays while being radiation-hard. These results improve the feasibility of using domain wall-based processors, especially for extreme-environment applications such as space.
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Submitted 14 April, 2023; v1 submitted 26 January, 2023;
originally announced January 2023.
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Evaluation of methods for the determination of tortuosity of Li-ion battery separators
Authors:
Wei Sun,
Q. M. Li,
Ping Xiao,
Paola Carbone
Abstract:
The porosities and tortuosities are commonly utilized to characterize the microstructure of a Li-ion battery's separator and are adopted as key input parameters in advanced battery models. Herein, a general classification of the tortuosity for a porous medium is introduced based on its bi-fold significance, i.e., the geometrical and physical tortuosities. Then, three different methods for the dete…
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The porosities and tortuosities are commonly utilized to characterize the microstructure of a Li-ion battery's separator and are adopted as key input parameters in advanced battery models. Herein, a general classification of the tortuosity for a porous medium is introduced based on its bi-fold significance, i.e., the geometrical and physical tortuosities. Then, three different methods for the determination of separator's electrical tortuosity are introduced and compared, which include the empirical Bruggeman equation, the experimental method using Electrochemical Impedance Spectrum (EIS) testing a the numerical method using realistic 3D microstructure of the separator obtained from nanoscale X-ray Computed Tomography (XCT). In addition, the connection between the geometrical tortuosity and the electrical tortuosity of a separator is established by introducing the electrical phenomenological factor (\b{eta}_e), which can facilitate the understanding of the relationship between the microstructure characteristics and transport properties of the separators. Furthermore, to quantitively compare the values of the tortuosities determined by different methods, the corresponding effective transport coefficients (δ) are compared, which was usually used as a correction for effective diffusivity and conductivity of electrolytes in porous media.
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Submitted 9 December, 2022;
originally announced December 2022.
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Harnessing dislocation motion using an electric field
Authors:
Mingqiang Li,
Yidi Shen,
Kun Luo,
Qi An,
Peng Gao,
Penghao Xiao,
Yu Zou
Abstract:
Dislocations, line defects in crystalline materials, play an essential role in the mechanical[1,2], electrical[3], optical[4], thermal[5], and phase transition[6] properties of these materials. Dislocation motion, an important mechanism underlying crystal plasticity, is critical for the hardening, processing, and application of a wide range of structural and functional materials[1,7,8]. For decade…
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Dislocations, line defects in crystalline materials, play an essential role in the mechanical[1,2], electrical[3], optical[4], thermal[5], and phase transition[6] properties of these materials. Dislocation motion, an important mechanism underlying crystal plasticity, is critical for the hardening, processing, and application of a wide range of structural and functional materials[1,7,8]. For decades, the movement of dislocations has been widely observed in crystalline solids under mechanical loading[9-11]. However, the goal of manipulating dislocation motion via a non-mechanical field alone remains elusive. Here, we present real-time observations of dislocation motion controlled solely by an external electric field in single-crystalline zinc sulfide (ZnS). We find that 30° partial dislocations can move back and forth depending on the direction of the electric field, while 90° partial dislocations are motionless. We reveal the nonstoichiometric nature of dislocation cores using atomistic imaging and determine their charge characteristics by density functional theory calculations. The glide barriers of charged 30° partial dislocations, which are lower than those of 90° partial dislocations, further decrease under an electric field, explaining the experimental observations. This study provides direct evidence of dislocation dynamics under a non-mechanical stimulus and opens up the possibility of modulating dislocation-related properties.
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Submitted 30 June, 2023; v1 submitted 27 November, 2022;
originally announced November 2022.
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Thermal insulation and heat guiding using nanopatterned MoS2
Authors:
Peng Xiao,
Alexandros El Sachat,
Emigdio Chávez Angel,
Giorgos Nikoulis,
Joseph Kioseoglou,
Konstantinos Termentzidis,
Clivia M. Sotomayor Torres,
Marianna Sledzinska
Abstract:
In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away…
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In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away from the electronic components. In this work we propose structures based on free-standing, few-layer, nanopatterned MoS2 that insulate and guide heat in the in-plane direction. We arrive at these designs via a thorough study of the in-plane thermal conductivity as a function of thickness, porosity, and temperature in both pristine and nanopatterned MoS2 membranes. Two-laser Raman thermometry was employed to measure the thermal conductivities of a set of free-standing MoS2 flakes with diameters greater than 20 um and thicknesses from 5 to 40 nm, resulting in values from 30 to 85 W/mK, respectively. After nanopatterning a square lattice of 100-nm diameter holes with a focused ion beam we have obtained a greater than 10-fold reduction of the thermal conductivities for the period of 500 nm and values below 1 W/mK for the period of 300 nm. The results were supported by equilibrium molecular dynamic simulations for both pristine and nanopatterned MoS2. The selective patterning of certain areas results in extremely large difference in thermal conductivities within the same material. Exploitation of this effect enabled for the first time thermal insulation and heat guiding in the few-layer MoS2. The patterned regions act as high thermal resistors: we obtained a thermal resistance of 4x10-6 m2K/W with only four patterned lattice periods of 300 nm, highlighting the significant potential of MoS2 for thermal management applications.
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Submitted 11 April, 2022;
originally announced April 2022.
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Excitation and detection of acoustic phonons in nanoscale systems
Authors:
Ryan C Ng,
Alexandros El Sachat,
Francisco Cespedes,
Martin Poblet,
Guilhem Madiot,
Juliana Jaramillo-Fernandez,
Peng Xiao,
Omar Florez,
Marianna Sledzinska,
Clivia Sotomayor-Torres,
Emigdio Chavez-Angel
Abstract:
Phonons play a key role in the physical properties of materials, and have long been a topic of study in physics. While the effects of phonons had historically been considered to be a hindrance, modern research has shown that phonons can be exploited due to their ability to couple to other excitations and consequently affect the thermal, dielectric, and electronic properties of solid state systems,…
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Phonons play a key role in the physical properties of materials, and have long been a topic of study in physics. While the effects of phonons had historically been considered to be a hindrance, modern research has shown that phonons can be exploited due to their ability to couple to other excitations and consequently affect the thermal, dielectric, and electronic properties of solid state systems, greatly motivating the engineering of phononic structures. Advances in nanofabrication have allowed for structuring and phonon confinement even down to the nanoscale, drastically changing material properties. Despite developments in fabricating such nanoscale devices, the proper manipulation and characterization of phonons continues to be challenging. However, a fundamental understanding of these processes could enable the realization of key applications in diverse fields such as topological phononics, information technologies, sensing, and quantum electrodynamics, especially when integrated with existing electronic and photonic devices. Here, we highlight seven of the available methods for the excitation and detection of acoustic phonons and vibrations in solid materials, as well as advantages, disadvantages, and additional considerations related to their application. We then provide perspectives towards open challenges in nanophononics and how the additional understanding granted by these techniques could serve to enable the next generation of phononic technological applications.
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Submitted 29 March, 2022;
originally announced March 2022.
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The distribution of B-site in the perovskite for a d5-d3 superexchange system studied with Molecular field theory and Monte Carlo simulation
Authors:
Jiajun Mo,
Min Liu,
Shiyu Xu,
Qinghang Zhang,
Jiyu Shen,
Puyue Xia,
Yanfang Xia,
Jizhou Jiang
Abstract:
The B-site disorder in the d5 - d3 system of perovskites has been analyzed with molecular field theory and Monte Carlo method. The model is applicable to RFe1-pCrpO3 at any p value. When the saturation magnetization MS and phase transition temperature TP are known, a model can be built to calculate the order or disorder distribution of lattice B-sites. We analyze the case that the Fe-Cr superexcha…
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The B-site disorder in the d5 - d3 system of perovskites has been analyzed with molecular field theory and Monte Carlo method. The model is applicable to RFe1-pCrpO3 at any p value. When the saturation magnetization MS and phase transition temperature TP are known, a model can be built to calculate the order or disorder distribution of lattice B-sites. We analyze the case that the Fe-Cr superexchange is antiferromagnetic and ferromagnetic coupling respectively. The simulation result shows that the theoretical calculation formula is suitable for the calculation of different B-site distribution. Through the simulation, we find that when the x and y are large, the system will appear obvious long-range order. The DM interaction has a certain influence on the saturation magnetization. Via calculation, we found that the distribution states of Fe and Cr do not always conform to the uniform distribution but rather exhibit an effect that reduces the Fe-Fe clustering. The establishment of this model offers an explanation for several previously contentious issues, e.g., what is the phase transition temperature range of double perovskite, and why the different phase transition temperatures with the same doping proportion. It provides theoretical guidance for the design of functional materials with an arbitrary phase transition temperature.
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Submitted 13 March, 2022;
originally announced March 2022.
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Metaplastic and Energy-Efficient Biocompatible Graphene Artificial Synaptic Transistors for Enhanced Accuracy Neuromorphic Computing
Authors:
Dmitry Kireev,
Samuel Liu,
Harrison Jin,
T. Patrick Xiao,
Christopher H. Bennett,
Deji Akinwande,
Jean Anne Incorvia
Abstract:
CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or con…
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CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.
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Submitted 8 March, 2022;
originally announced March 2022.
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Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
Authors:
Alexandros El Sachat,
Peng Xiao,
Davide Donadio,
Frédéric Bonell,
Marianna Sledzinska,
Alain Marty,
Céline Vergnaud,
Hervé Boukari,
Matthieu Jamet,
Guillermo Arregui,
Zekun Chen,
Francesc Alzina,
Clivia M. Sotomayor Torres,
Emigdio Chavez-Angel
Abstract:
We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane therm…
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We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane thermal conductivity of polycrystalline films with thickness larger than 12 nm compared to the crystalline films of the same thickness due to phonon grain boundary scattering. Density functional theory calculations are in good agreement with the experiments and further reveal the ballistic nature of cross-plane heat transport in PtSe2 up to a certain thickness (~20 nm). In addition, our experiments revealed strong interlayer interactions in PtSe2, short acoustic phonon lifetimes in the range of picoseconds, out-of-plane elastic constant C33=31.8 GPa and layer-dependent group velocity ranging from 1340 m/s in bilayer PtSe2 to 1873 m/s in 8 layers of PtSe2. The potential of tuning the lattice cross-plane thermal conductivity of layered 2D materials with the level of crystallinity and the real-time observation of coherent phonon dynamics, which have direct implications on the cooling and transport of electrons, open a new playground for research in 2D thermoelectric devices and provide guidelines for thermal management in 2D electronics.
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Submitted 29 November, 2021; v1 submitted 26 November, 2021;
originally announced November 2021.
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Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic Computing
Authors:
Thomas Leonard,
Samuel Liu,
Mahshid Alamdar,
Can Cui,
Otitoaleke G. Akinola,
Lin Xue,
T. Patrick Xiao,
Joseph S. Friedman,
Matthew J. Marinella,
Christopher H. Bennett,
Jean Anne C. Incorvia
Abstract:
In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse behaviors from the same materials. Here, we measure artificial synapses based on ma…
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In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse behaviors from the same materials. Here, we measure artificial synapses based on magnetic materials that use a magnetic tunnel junction and a magnetic domain wall. By fabricating lithographic notches in a domain wall track underneath a single magnetic tunnel junction, we achieve 4-5 stable resistance states that can be repeatably controlled electrically using spin orbit torque. We analyze the effect of geometry on the synapse behavior, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a straight device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application-specific synaptic functions. Implementing an artificial neural network applied on streamed Fashion-MNIST data, we show that the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional neural network for CIFAR-100 image recognition, we show that the straight magnetic synapse achieves near-ideal inference accuracy, due to the stability of its resistance levels. This work shows multi-weight magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.
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Submitted 17 February, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Effect of alloying and microstructure on formability of advanced high-strength steels processed via quenching and partitioning
Authors:
P. Xia,
F. Vercruysse,
C. Celada-Casero,
P. Verleysen,
R. H. Petrov,
I. Sabirov,
J. M. Molina-Aldareguia,
A. Smith,
B. Linke,
R. Thiessen,
D. Frometa,
S. Parareda,
A. Lara
Abstract:
The article focuses on the effect of alloying and microstructure on formability of advanced high strength steels (AHSSs) processed via quenching and partitioning (Q&P). Three different Q&P steels with different combination of alloying elements and volume fraction of retained austenite are subjected to uniaxial tensile and Nakajima testing. Tensile mechanical properties are determined, and the form…
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The article focuses on the effect of alloying and microstructure on formability of advanced high strength steels (AHSSs) processed via quenching and partitioning (Q&P). Three different Q&P steels with different combination of alloying elements and volume fraction of retained austenite are subjected to uniaxial tensile and Nakajima testing. Tensile mechanical properties are determined, and the forming limit diagrams (FLDs) are plotted. Microstructure of the tested samples is analyzed, and dramatic reduction of retained austenite fraction is detected. It is demonstrated that all steels are able to accumulate much higher amount of plastic strain when tested using Nakajima method. The observed phenomenon is related to the multiaxial stress state and strain gradients through the sheet thickness resulting in a fast transformation of retained austenite, as well as the ability of the tempered martensitic matrix to accumulate plastic strain. Surprisingly, a Q&P steel with the highest volume fraction of retained austenite and highest tensile ductility shows the lowest formability among studied grades. The latter observation is related to the highest sum of fractions of initial fresh martensite and stress/strain induced martensite promoting formation of microcracks. Their role and ability of tempered martensitic matrix to accumulate plastic deformation during forming of Q&P steels is discussed.
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Submitted 19 October, 2021;
originally announced October 2021.
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A new physical simulation tool to predict the interface of dissimilar aluminum to steel welds performed by Friction Melt Bonding
Authors:
T. Sapanathan,
N. Jimenez-Mena,
I. Sabirov,
M. A. Monclus,
J. M. Molina-Aldareguia,
P. Xia,
L. Zhao,
A. Simar
Abstract:
Optimization of the intermetallic layer thickness and the suppression of interfacial defects are key elements to improve the load bearing capacity of dissimilar joints. However, till date we do not have a systematic tool to investigate the dissimilar joints and the intermetallic properties produced by a welding condition. Friction Melt Bonding (FMB) is a recently developed technique for joining di…
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Optimization of the intermetallic layer thickness and the suppression of interfacial defects are key elements to improve the load bearing capacity of dissimilar joints. However, till date we do not have a systematic tool to investigate the dissimilar joints and the intermetallic properties produced by a welding condition. Friction Melt Bonding (FMB) is a recently developed technique for joining dissimilar metals that also does not exempt to these challenges. The FMB of DP980 and Al6061-T6 is investigated using a new physical simulation tool, based on Gleeble thermo-mechanical simulator, to understand the effect of individual parameter on the intermetallic formation. The proposed method demonstrates its capability in reproducing the intermetallic characteristics, including the thickness of intermetallic bonding layer, the morphology and texture of its constituents (Fe2Al5 and Fe4Al13), as well as their nanohardness and reduced modulus. The advantages of physical simulation tool can enable novel developing routes for the development of dissimilar metal joining processes and facilitate to reach the requiring load bearing capacity of the joints.
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Submitted 1 April, 2021;
originally announced April 2021.
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High temperature in situ SEM assessment followed by ex situ AFM and EBSD investigation of the nucleation and early growth stages of Fe-Al intermetallics
Authors:
T. Sapanathan,
I. Sabirov,
P. Xia,
M. A. Monclus,
J. M. Molina-Aldareguia,
P. J. Jacques,
A. Simar
Abstract:
A dedicated in situ heating setup in a scanning electron microscope (SEM) followed by an ex situ atomic force microscopy (AFM) and electron backscatter diffraction (EBSD) is used to characterize the nucleation and early growth stages of Fe-Al intermetallics (IMs) at 596 °C. A location tracking is used to interpret further characterization. Ex situ AFM observations reveal a slight shrinkage and out…
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A dedicated in situ heating setup in a scanning electron microscope (SEM) followed by an ex situ atomic force microscopy (AFM) and electron backscatter diffraction (EBSD) is used to characterize the nucleation and early growth stages of Fe-Al intermetallics (IMs) at 596 °C. A location tracking is used to interpret further characterization. Ex situ AFM observations reveal a slight shrinkage and out of plane protrusion of the IM at the onset of IM nucleation followed by directional growth. The formed interfacial IM compounds were identified by ex situ EBSD. It is now clearly demonstrated that the θ-phase nucleates first prior to the diffusion-controlled growth of the η-phase. The θ-phase prevails the intermetallic layer.
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Submitted 31 March, 2021;
originally announced March 2021.
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PTCDA molecular monolayer on Pb thin films: An unusual π-electron Kondo system and its interplay with a quantum-confined superconductor
Authors:
Shuangzan Lu,
Hyoungdo Nam,
Penghao Xiao,
Mengke Liu,
Yanping Guo,
Yusong Bai,
Zhengbo Cheng,
Jinghao Deng,
Yanxing Li,
Haitao Zhou,
Graeme Henkelman,
Gregory A. Fiete,
Hong-Jun Gao,
Allan H. MacDonald,
Chendong Zhang,
Chih-Kang Shih
Abstract:
The hybridization of magnetism and superconductivity has been an intriguing playground for correlated electron systems, hosting various novel physical phenomena. Usually, localized d- or f-electrons are central to magnetism. In this study, by placing a PTCDA (3,4,9,10-perylene tetracarboxylic dianhydride) molecular monolayer on ultra-thin Pb films, we built a hybrid magnetism/superconductivity (M/…
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The hybridization of magnetism and superconductivity has been an intriguing playground for correlated electron systems, hosting various novel physical phenomena. Usually, localized d- or f-electrons are central to magnetism. In this study, by placing a PTCDA (3,4,9,10-perylene tetracarboxylic dianhydride) molecular monolayer on ultra-thin Pb films, we built a hybrid magnetism/superconductivity (M/SC) system consisting of only sp electronic levels. The magnetic moments reside in the unpaired molecular orbital originating from interfacial charge-transfers. We reported distinctive tunneling spectroscopic features of such a Kondo screened pi-electron impurity lattice on a superconductor in the regime of TK>>delta suggesting the formation of a two-dimensional bound states band. Moreover, moiré superlattices with tunable twist angle and the quantum confinement in the ultra-thin Pb films provide easy and flexible implementations to tune the interplay between the Kondo physics and the superconductivity, which are rarely present in M/SC hybrid systems.
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Submitted 29 September, 2021; v1 submitted 22 February, 2021;
originally announced February 2021.
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Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing
Authors:
Mahshid Alamdar,
Thomas Leonard,
Can Cui,
Bishweshwor P. Rimal,
Lin Xue,
Otitoaleke G. Akinola,
T. Patrick Xiao,
Joseph S. Friedman,
Christopher H. Bennett,
Matthew J. Marinella,
Jean Anne C. Incorvia
Abstract:
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these…
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There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 Ω-μm^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.
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Submitted 26 October, 2020;
originally announced October 2020.
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Detonation-induced transformation of graphite to hexagonal diamond
Authors:
Elissaios Stavrou,
Michael Bagge-Hansen,
Joshua A. Hammons,
Michael H. Nielsen,
Bradley A. Steele,
Penghao Xiao,
Matthew P. Kroonblawd,
Matthew D. Nelms,
William L. Shaw,
Will Bassett,
Sorin Bastea,
Lisa M. Lauderbach,
Ralph L. Hodgin,
Nicholas A. Perez-Marty,
Saransh Singh,
Pinaki Das,
Yuelin Li,
Adam Schuman,
Nicholas Sinclair,
Kamel Fezzaa,
Alex Deriy,
Lara D. Leininger,
Trevor M. Willey
Abstract:
We explore the structural evolution of highly oriented pyrolytic graphite (HOPG) under detonation-induced shock conditions using in-situ synchrotron X-ray diffraction in the ns time scale. We observe the formation of hexagonal diamond (lonsdaleite) at pressures above 50 GPa, in qualitative agreement with recent gas gun experiments. First-principles density functional calculations reveal that under…
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We explore the structural evolution of highly oriented pyrolytic graphite (HOPG) under detonation-induced shock conditions using in-situ synchrotron X-ray diffraction in the ns time scale. We observe the formation of hexagonal diamond (lonsdaleite) at pressures above 50 GPa, in qualitative agreement with recent gas gun experiments. First-principles density functional calculations reveal that under uniaxial compression the energy barrier for the transition towards hexagonal diamond is lower than cubic diamond. Finally, no indication of cubic diamond formation was observed up to >70 GPa.
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Submitted 22 July, 2020;
originally announced July 2020.
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High-harmonic generation in GaAs beyond the perturbative regime
Authors:
Peiyu Xia,
Tomohiro Tamaya,
Changsu Kim,
Faming Lu,
Teruto Kanai,
Nobuhisa Ishii,
Jiro Itatani,
Hidefumi Akiyama,
Takeo Kato
Abstract:
We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between…
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We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.
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Submitted 9 April, 2020;
originally announced April 2020.
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First-principles study of magnon-phonon interactions in gadolinium iron garnet
Authors:
Lian-Wei Wang Li-Shan Xie Peng-Xiang Xu Ke Xia
Abstract:
We obtained the spin-wave spectrum based on a first-principles method of exchange constants, calculated the phonon spectrum by the first-principles phonon calculation method, and extracted the broadening of the magnon spectrum, $Δω$, induced by magnon-phonon interactions in gadolinium iron garnet (GdIG). Using the obtained exchange constants, we reproduce the experimental Curie temperature and the…
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We obtained the spin-wave spectrum based on a first-principles method of exchange constants, calculated the phonon spectrum by the first-principles phonon calculation method, and extracted the broadening of the magnon spectrum, $Δω$, induced by magnon-phonon interactions in gadolinium iron garnet (GdIG). Using the obtained exchange constants, we reproduce the experimental Curie temperature and the compensation temperature from spin models using Metropolis Monte Carlo (MC) simulations. In the lower-frequency regime, the fitted positions of the magnon-phonon dispersion crossing points are consistent with the inelastic neutron scattering experiment. We found that the $Δω$ and magnon wave vector $k$ have a similar relationship in YIG. The broadening of the acoustic spin-wave branch is proportional to $k^{2}$, while that of the YIG-like acoustic branch and the optical branch are a constant. At a specific $k$, the magnon-phonon thermalization time of $τ_{mp}$ are approximately $10^{-9}$~s, $10^{-13}$~s, and $10^{-14}$~s for acoustic branch, YIG-like acoustic branch, and optical branch, respectively. This research provides specific and effective information for developing a clear understanding of the spin-wave mediated spin Seebeck effect and complements the lack of lattice dynamics calculations of GdIG.
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Submitted 22 December, 2019;
originally announced December 2019.
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Fracturing of polycrystalline MoS$_2$ nanofilms
Authors:
M. Sledzinska,
G. Jumbert,
M. Placidi,
A. Arrighi,
P. Xiao,
F. Alzina,
C. M. Sotomayor Torres
Abstract:
The possibility of tailoring the critical strain of 2D materials will be crucial for the fabrication of flexible devices. In this paper, the fracture in polycrystalline MoS2 films with two different grain orientations is studied at the micro- and nanoscale using electron microscopy. The critical uniaxial strain is determined to be approximately 5% and independent of the sample morphology. However,…
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The possibility of tailoring the critical strain of 2D materials will be crucial for the fabrication of flexible devices. In this paper, the fracture in polycrystalline MoS2 films with two different grain orientations is studied at the micro- and nanoscale using electron microscopy. The critical uniaxial strain is determined to be approximately 5% and independent of the sample morphology. However, electron beam irradiation is found to enhance the interaction between the MoS2 and the PDMS substrates, leading to an increased critical strain that can exceed 10%. This enhancement of strain resistance was used to fabricate a mechanically robust array of lines 1 mm in length. Finally, nanoscale crack propagation studied by transmission electron microscopy showed that cracks propagate along the grain boundaries as well as through the grains, preferentially along van der Waals bonding. These results provide insight regarding the fracture of polycrystalline 2D materials and a new method to tailor the critical strain and nanofabrication of ultra-thin MoS2 devices using well-developed tools, which will be of great interest to the flexible electronics industry.
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Submitted 25 November, 2019;
originally announced November 2019.
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Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd3As2
Authors:
Bing Cheng,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Peiyu Xia,
Timo Schumann,
Susanne Stemmer,
Jiro Itatani,
N. P. Armitage,
Ryusuke Matsunaga
Abstract:
We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahe…
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We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahertz spectroscopy and calculations also clarify the microscopic mechanism of the nonlinearity originating in the coherent acceleration of Dirac electrons in momentum space. Our results provide clear insights for nonlinear current of Dirac electrons driven by terahertz field under an influence of scattering, paving the way toward novel devices for high-speed electronics and photonics based on topological semimetals.
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Submitted 24 March, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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An L$_0$L$_1$-norm compressive sensing paradigm for the construction of sparse predictive lattice models using mixed integer quadratic programming
Authors:
Wenxuan Huang,
Alexander Urban,
Penghao Xiao,
Ziqin Rong,
Hena Das,
Tina Chen,
Nongnuch Artrith,
Alexandra Toumar,
Gerbrand Ceder
Abstract:
First-principles based lattice models allow the modeling of ab initio thermodynamics of crystalline mixtures for applications such as the construction of phase diagrams and the identification of ground state atomic orderings. The recent development of compressive sensing approaches for the construction of lattice models has further enabled the systematic construction of sparse physical models with…
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First-principles based lattice models allow the modeling of ab initio thermodynamics of crystalline mixtures for applications such as the construction of phase diagrams and the identification of ground state atomic orderings. The recent development of compressive sensing approaches for the construction of lattice models has further enabled the systematic construction of sparse physical models without the need for human intuition other than requiring the compactness of effective cluster interactions. However, conventional compressive sensing based on L1-norm regularization is strictly only applicable to certain classes of optimization problems and is otherwise not guaranteed to generate optimally sparse and transferable results, so that the method can only be applied to some materials science applications. In this paper, we illustrate a more robust L0L1-norm compressive-sensing method that removes the limitations of conventional compressive sensing and generally results in sparser lattice models that are at least as predictive as those obtained from L1-norm compressive sensing. Apart from the theory, a practical implementation based on state-of-the-art mixed-integer quadratic programming (MIQP) is proposed. The robustness of our methodology is illustrated for four different transition-metal oxides with relevance as battery cathode materials: Li2xTi2(1-x)O2, Li2xNi2yO2, MgxCr2O4, and NaxCrO2. This method provides a practical and robust approach for the construction of sparser and more predictive lattice models, improving on the compressive sensing paradigm and making it applicable to a much broader range of applications.
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Submitted 16 July, 2018;
originally announced July 2018.
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Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems
Authors:
Changjin Wan,
Liqiang Zhu,
Yanghui Liu,
Ping Feng,
Zhaoping Liu,
Hailiang Cao,
Peng Xiao,
Yi Shi,
Qing Wan
Abstract:
Neuron is the most important building block in our brain, and information processing in individual neuron involves the transformation of input synaptic spike trains into an appropriate output spike train. Hardware implementation of neuron by individual ionic/electronic hybrid device is of great significance for enhancing our understanding of the brain and solving sensory processing and complex rec…
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Neuron is the most important building block in our brain, and information processing in individual neuron involves the transformation of input synaptic spike trains into an appropriate output spike train. Hardware implementation of neuron by individual ionic/electronic hybrid device is of great significance for enhancing our understanding of the brain and solving sensory processing and complex recognition tasks. Here, we provide a proof-of-principle artificial neuron based on a proton conducting graphene oxide (GO) coupled oxide-based electric-double-layer (EDL) transistor with multiple driving inputs and one modulatory input terminal. Paired-pulse facilitation, dendritic integration and orientation tuning were successfully emulated. Additionally, neuronal gain control (arithmetic) in the scheme of rate coding is also experimentally demonstrated. Our results provide a new-concept approach for building brain-inspired cognitive systems.
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Submitted 20 October, 2015;
originally announced October 2015.
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Macroscopic and direct light propulsion of bulk graphene material
Authors:
Tengfei Zhang,
Huicong Chang,
Yingpeng Wu,
Peishuang Xiao,
Ningbo Yi,
Yanhong Lu,
Yanfeng Ma,
Yi Huang,
Kai Zhao,
Xiao-Qing Yan,
Zhi-Bo Liu,
Jian-Guo Tian,
Yongsheng Chen
Abstract:
It has been a great challenge to achieve the direct light manipulation of matter on a bulk scale. In this work, the direct light propulsion of matter was observed on a macroscopic scale for the first time using a bulk graphene based material. The unique structure and properties of graphene and the morphology of the bulk graphene material make it capable of not only absorbing light at various wavel…
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It has been a great challenge to achieve the direct light manipulation of matter on a bulk scale. In this work, the direct light propulsion of matter was observed on a macroscopic scale for the first time using a bulk graphene based material. The unique structure and properties of graphene and the morphology of the bulk graphene material make it capable of not only absorbing light at various wavelengths but also emitting energetic electrons efficiently enough to drive the bulk material following Newtonian mechanics. Thus, the unique photonic and electronic properties of individual graphene sheets are manifested in the response of the bulk state. These results offer an exciting opportunity to bring about bulk scale light manipulation with the potential to realize long-sought proposals in areas such as the solar sail and space transportation driven directly by sunlight.
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Submitted 16 May, 2015;
originally announced May 2015.
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A brief introduction to giant magnetoresistance
Authors:
Liu Chang,
Min Wang,
Lei Liu,
Siwei Luo,
Pan Xiao
Abstract:
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically 10-80%) in electrical resistance in the presence of a magnetic field. The effect is exploited commercially by manufacturers of hard disk drives. The 2007 Nobel P…
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Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically 10-80%) in electrical resistance in the presence of a magnetic field. The effect is exploited commercially by manufacturers of hard disk drives. The 2007 Nobel Prize in physics was awarded to Albert Fert and Peter Grunberg for the discovery of GMR.
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Submitted 20 December, 2014;
originally announced December 2014.
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Interfacial adhesion between graphene and silicon dioxide by density functional theory with van der Waals corrections
Authors:
Wei Gao,
Penghao Xiao,
Graeme Henkelman,
Kenneth M. Liechti,
Rui Huang
Abstract:
Interfacial adhesion between graphene and a SiO2 substrate is studied by density functional theory (DFT) with dispersion corrections. The results demonstrate the van der Waals (vdW) interaction as the predominate mechanism for the graphene/SiO2 interface. It is found that the interaction strength is strongly influenced by changes of the SiO2 surface structures due to surface reactions with water.…
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Interfacial adhesion between graphene and a SiO2 substrate is studied by density functional theory (DFT) with dispersion corrections. The results demonstrate the van der Waals (vdW) interaction as the predominate mechanism for the graphene/SiO2 interface. It is found that the interaction strength is strongly influenced by changes of the SiO2 surface structures due to surface reactions with water. The adhesion energy is reduced when the reconstructed SiO2 surface is hydroxylated, and further reduced when covered by a monolayer of adsorbed water molecules. Thus, the effect of humidity may help explain the wide variation of adhesion energies measured in recent experiments between graphene and SiO2. Moreover, it is noted that vdW forces are required to accurately model the graphene/SiO2 interface with DFT and that the adhesion energy is underestimated by empirical force fields commonly used in atomistic simulations.
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Submitted 14 March, 2014;
originally announced March 2014.
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Novel Two-dimensional SiC2 Sheet with Full Pentagon Network
Authors:
J. Liu,
C. Y. He,
N. Jiao,
H. P. Xiao,
K. W. Zhang,
R. Z. Wang,
L. Z. Sun
Abstract:
We propose a promising two-dimensional nano-sheet of SiC2 (SiC2-pentagon) consisting of tetrahedral silicon atoms and triple-linked carbon atoms in a fully-pentagon network. The SiC2-pentagon with buckled configuration is more favorable than its planar counterpart and previously proposed SiC2-silagraphene with tetra-coordinate silicon atoms; and its dynamical stability is confirmed through phonon…
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We propose a promising two-dimensional nano-sheet of SiC2 (SiC2-pentagon) consisting of tetrahedral silicon atoms and triple-linked carbon atoms in a fully-pentagon network. The SiC2-pentagon with buckled configuration is more favorable than its planar counterpart and previously proposed SiC2-silagraphene with tetra-coordinate silicon atoms; and its dynamical stability is confirmed through phonon analyzing. Buckled SiC2-pentagon is an indirect-band-gap semiconductor with a gap of 1.388 eV. However, its one-dimensional nanoribbons can be metals or semiconductors depending on the edge type, shape, and decoration. Finally, we propose a method to produce the buckled SiC2-pentagon through chemical exfoliation on the beta-SiC(001)-c(2*2) SDB surface.
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Submitted 24 July, 2013;
originally announced July 2013.
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Superconducting Surface Impedance under Radiofrequency Field
Authors:
B. P. Xiao,
C. E. Reece,
M. J. Kelley
Abstract:
Based on BCS theory with moving Cooper pairs, the electron states distribution at 0K and the probability of electron occupation with finite temperature have been derived and applied to anomalous skin effect theory to obtain the surface impedance of a superconductor under radiofrequency (RF) field. We present the numerical results for Nb and compare these with representative RF field-dependent effe…
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Based on BCS theory with moving Cooper pairs, the electron states distribution at 0K and the probability of electron occupation with finite temperature have been derived and applied to anomalous skin effect theory to obtain the surface impedance of a superconductor under radiofrequency (RF) field. We present the numerical results for Nb and compare these with representative RF field-dependent effective surface resistance measurements from a 1.5 GHz resonant structure.
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Submitted 1 October, 2012; v1 submitted 19 July, 2012;
originally announced July 2012.