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Exploring the Charge Density Wave phase of 1$T$-TaSe$_2$: Mott or Charge-transfer Gap?
Authors:
C. J. Sayers,
G. Cerullo,
Y. Zhang,
C. E. Sanders,
R. T. Chapman,
A. S. Wyatt,
G. Chatterjee,
E. Springate,
D. Wolverson,
E. Da Como,
E. Carpene
Abstract:
1$T$-TaSe$_2$ is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations inferred that the occurrence of the Mott phase is limited to the surface only of bulk specimens, but recent analysis on thin samples revealed that the Mott-like beha…
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1$T$-TaSe$_2$ is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations inferred that the occurrence of the Mott phase is limited to the surface only of bulk specimens, but recent analysis on thin samples revealed that the Mott-like behavior, observed in the monolayer, is rapidly suppressed with increasing thickness. Here, we report combined time- and angle-resolved photoemission spectroscopy and theoretical investigations of the electronic structure of 1$T$-TaSe$_2$. Our experimental results confirm the existence of a state above $E_F$, previously ascribed to the upper Hubbard band, and an overall band gap of $\sim 0.7$ eV at $\overlineΓ$. However, supported by density functional theory calculations, we demonstrate that the origin of this state and the gap rests on band structure modifications induced by the CDW phase alone, without the need for Mott correlation effects.
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Submitted 10 March, 2023;
originally announced March 2023.
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$
Authors:
Deepnarayan Biswas,
Alfred J. H. Jones,
Paulina Majchrzak,
Byoung Ki Choi,
Tsung-Han Lee,
Klara Volckaert,
Jiagui Feng,
Igor Marković,
Federico Andreatta,
Chang-Jong Kang,
Hyuk Jin Kim,
In Hak Lee,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Charlotte E. Sanders,
Yu Zhang,
Gabriel Karras,
Richard T. Chapman,
Adam S. Wyatt,
Emma Springate,
Jill A. Miwa,
Philip Hofmann,
Phil D. C. King,
Young Jun Chang
, et al. (2 additional authors not shown)
Abstract:
Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin…
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Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light.
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Submitted 27 July, 2020;
originally announced July 2020.
