Showing 1–4 of 4 results for author: Wu, Y G

On the local aspect of valleytronics

Authors: Zheng-Han Huang, Feng-Wu Chen, Yu-Shu G. Wu

Abstract: Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion symmetry can exhibit nonvanishing valley magnetic moments. Such constraint excludes from relevant applications those with inversion symmetry, as specifically exempli… ▽ More Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion symmetry can exhibit nonvanishing valley magnetic moments. Such constraint excludes from relevant applications those with inversion symmetry, as specifically exemplified by gapless monolayer graphene despite its technological advantage in routine growth and production. This work revisits valley-derived magnetic moments in a broad context covering inhomogeneous structures as well. It generalizes the notion of valley magnetic moment for a state from an integrated total quantity to the local field called "local valley magnetic moment" with space-varying distribution. In suitable inversion-symmetric structures with inhomogeneity, e.g., zigzag nanoribbons of gapless monolayer graphene, it is shown that the local moment of a state can be nonvanishing with sizable magnitude, while the corresponding total moment is subject to the broken symmetry constraint. Moreover, it is demonstrated that such local moment can interact with space-dependent electric and magnetic fields manifesting pronounced field effects and making possible a local valley control with external fields. Overall, a path to "local valleytronics" is illustrated which exploits local valley magnetic moments for device applications, relaxes the broken symmetry constraint on materials, and expands flexibility in the implementation of valleytronics. △ Less

Submitted 31 August, 2023; originally announced September 2023.

All-electrical valley filtering in graphene systems (II): Numerical study of electron transport in valley valves

Authors: Jia-Huei Jiang, Ning-Yuan Lue, Feng-Wu Chen, Yu-Shu G. Wu

Abstract: This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are investigated, such as those due to interface scattering, long- and short- range impurity scattering, edge roughness, strain, inter-filter spacing, or increasing number o… ▽ More This work performs a numerical study of electron transport through the fundamental logic gate in valleytronics - a valley valve consisting of two or increasing number of valley filters. Various typical effects on the transport are investigated, such as those due to interface scattering, long- and short- range impurity scattering, edge roughness, strain, inter-filter spacing, or increasing number of valley filters. For illustration, we consider the class of specific valves built from graphene quantum wire valley filters in single layer or bilayer graphene, with the filters subject to separate control of in-plane, transverse electric fields. The nearest-neighbor tight-binding model of graphene is used to formulate the corresponding transport problem, and the algorithm of recursive Green's function method is applied to solve for the corresponding transmission coefficient. In the case of two-filter valves, the result explicitly demonstrates the existence of a pronounced on-off contrast in electron transmission between the two configurations of valves, namely, one with identical and the other with opposite valley polarities in the two constituent filters. The contrast is shown to be enhanced when increasing the number of filters in valves. Signatures of Fano-Fabry-Perot type resonances in association with interface scattering and inter-filter spacing are illustrated. Electron backscattering due to impurities is found to be sizably suppressed, with the valve performance showing considerable robustness against edge roughness scattering. On the other hand, the presence of a uniaxial strain modifies the electron transmission and results in an interesting quasi-periodic modulation of transmission as we vary the strain strength. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Comments: 23 pages, 24 figures

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Authors: Feng-Wu Chen, Nin-Yuan Lue, Mei-Yin Chou, Yu-Shu G. Wu

Abstract: Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical… ▽ More Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Valley field mechanics: a local perspective beyond valley flavor

Authors: Feng-Wu Chen, Zheng-Han Huang, Yu-Shu G. Wu

Abstract: Valleytronics in 2D materials - primarily graphene and transition metal dichalcogenides is rooted in the existence of valley flavor but extends far out to the rich dimension of local physics, as reviewed, extensively studied and demonstrated in this work, in terms of a local, Ginzburg-Landau order parameter type field - valley field. A theoretical framework - valley field mechanics thus arises to… ▽ More Valleytronics in 2D materials - primarily graphene and transition metal dichalcogenides is rooted in the existence of valley flavor but extends far out to the rich dimension of local physics, as reviewed, extensively studied and demonstrated in this work, in terms of a local, Ginzburg-Landau order parameter type field - valley field. A theoretical framework - valley field mechanics thus arises to address the local physics and opens a path to local valley control. Numerical and analytical results are presented for various structures. A spectrum of novel local phenomena are revealed with characteristics in apparent contradiction to valley flavor-based expectations or constraints, enabling flexible valley control - for example, both symmetry and material restrictions previously established are relaxed, with gapless, single-layer graphene, a material with inversion symmetry now added to the material list for a relatively simple realization of valleytronics. Non-valley targeted applications can also benefit from local valley physics, with an access given to electrical switch between direct and indirect gaps. Last, the framework of valley field mechanics is applied to valley-controlled quantum transport. Overall, the diverse local valley phenomena revealed suggest the new exciting direction of valley field engineering - design and search for quantum structures to tailor local valley physics for applications. △ Less

Submitted 5 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.