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Controlling the thickness of Josephson tunnel barriers with atomic layer deposition
Authors:
Alan J. Elliot,
Chunrui Ma,
Rongtao Lu,
Melisa Xin,
Siyuan Han,
Judy Z. Wu,
Ridwan Sakidja,
Haifeng Yu
Abstract:
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel barrier. An IL up to 2 nm forms between ALD Al2O3 and Al. However, the IL thickness is unknown for ALD films less 1 nm. In this work, Nb-Al-ALD-Al2O3-…
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Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel barrier. An IL up to 2 nm forms between ALD Al2O3 and Al. However, the IL thickness is unknown for ALD films less 1 nm. In this work, Nb-Al-ALD-Al2O3-Nb trilayers with tunnel barriers from 0.6 - 1.6 nm were grown in situ. Nb-Al-AlOx-Nb JJs with thermally oxidized tunnel barrier were produced for reference. RN was obtained using a four-point method at 300 K. JC, and its dependence on barrier thickness, was calculated from the Ambegaokar-Baratoff formula. The Al surface was modeled using ab initio molecular dynamics to study the nucleation of Al2O3 on Al. Current voltage characteristics were taken at 4 K to corroborate the room temperature measurements. Together, these results suggest that ALD may be used to grow an ultrathin, uniform tunnel barrier with controllable tunnel resistance and JC, but a thin IL develops during the nucleation stage of ALD growth that may disqualify Al as a suitable wetting layer for ALD JJ based qubits.
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Submitted 13 August, 2014;
originally announced August 2014.
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Integrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions
Authors:
Alan J. Elliot,
Gary A. Malek,
Rongtao Lu,
Siyuan Han,
Haifeng Yiu,
Shiping Zhao,
Judy Z. Wu
Abstract:
Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel bar…
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Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barrier using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb/Al/Al2O3/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ~ 1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al2O3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.
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Submitted 5 May, 2014;
originally announced May 2014.
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Development of Textured Magnesium Oxide Templates on Amorphous Polymer Surfaces Using Ion-Beam-Assisted-Deposition
Authors:
Alan J. Elliot,
Ronald N. Vallejo,
Rongtao Lu,
Judy Z. Wu
Abstract:
Biaxially textured MgO templates have been successfully fabricated on several amorphous polymer films including Kapton tapes, polyimide, Poly(methyl methacrylate) (PMMA), and photoresist films using ion-beam-assisted-deposition (IBAD). With a Y2O3 buffer layer on polymer surfaces, roughening of the polymer surfaces due to preferential ion beam sputtering can be effectively reduced to meet the surf…
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Biaxially textured MgO templates have been successfully fabricated on several amorphous polymer films including Kapton tapes, polyimide, Poly(methyl methacrylate) (PMMA), and photoresist films using ion-beam-assisted-deposition (IBAD). With a Y2O3 buffer layer on polymer surfaces, roughening of the polymer surfaces due to preferential ion beam sputtering can be effectively reduced to meet the surface compatibility requirement for IBAD-MgO texturing. In-plane full-width-at-half-maximum (FWHM) of ~10.7 degrees and out-of-plane FWHM ~ 3.5 degrees have been obtained on homoepitaxial MgO films grown on top of the IBAD-MgO template. This method provides a practical route for fabricating epitaxial devices on polymers needed for flexible optoelectronics.
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Submitted 21 September, 2013;
originally announced September 2013.
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Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition
Authors:
Rongtao Lu,
Alan J. Elliot,
Logan Wille,
Bo Mao,
Siyuan Han,
Judy Z. Wu,
John Talvacchio,
Heidi M. Schulze,
Rupert M. Lewis,
Daniel J. Ewing,
H. F. Yu,
G. M. Xue,
S. P. Zhao
Abstract:
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and…
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Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.
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Submitted 17 September, 2013;
originally announced September 2013.
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Probing the Nucleation of Al2O3 in Atomic Layer Deposition on Aluminum for Ultrathin Tunneling Barriers in Josephson Junctions
Authors:
Alan J. Elliot,
Gary Malek,
Logan Wille,
Rongtao Lu,
Siyuan Han,
Judy Z. Wu,
John Talvacchio,
Rupert M. Lewis
Abstract:
Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic defects, such as oxygen vacancies, which are believed to be a primary source of the two-level fluctuators and contribute to the decoherence of the qubits. Development…
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Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic defects, such as oxygen vacancies, which are believed to be a primary source of the two-level fluctuators and contribute to the decoherence of the qubits. Development of alternative approaches for improved tunneling barriers becomes urgent and imperative. Atomic Layer Deposition (ALD) of aluminum oxide (Al2O3) is a promising alternative to resolve the issue of oxygen vacancies in the Al2O3 tunneling barrier, and its self-limiting growth mechanism provides atomic-scale precision in tunneling barrier thickness control. A critical issue in ALD of Al2O3 on metals is the lack of hydroxyl groups on metal surface, which prevents nucleation of the trimethylaluminum (TMA). In this work, we explore modifications of the aluminum surface with water pulse exposures followed by TMA pulse exposures to assess the feasibility of ALD as a viable technique for JJ qubits. ALD Al2O3 films from 40 angstroms to 100 angstoms were grown on 1.4 angstroms to 500 angstroms of Al and were characterized with ellipsometry and atomic force microscopy. A growth rate of 1.2 angstroms/cycle was measured, and an interfacial layer (IL) was observed. Since the IL thickness depends on the availability of Al and saturated at 2 nm, choosing ultrathin Al wetting layers may lead to ultrathin ALD Al2O3 tunneling barriers.
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Submitted 13 May, 2014; v1 submitted 17 September, 2013;
originally announced September 2013.
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A Ni-Fe Layered Double Hydroxide-Carbon Nanotube Complex for Water Oxidation
Authors:
Ming Gong,
Yanguang Li,
Hailiang Wang,
Yongye Liang,
Justin Zachary Wu,
Jigang Zhou,
Jian Wang,
Tom Regier,
Fei Wei,
Hongjie Dai
Abstract:
Highly active, durable and cost-effective electrocatalysts for water oxidation to evolve oxygen gas hold a key to a range of renewable energy solutions including water splitting and rechargeable metal-air batteries. Here, we report the synthesis of ultrathin nickel iron layered double hydroxide nanoplates on mildly oxidized multi-walled carbon nanotubes. Incorporation of Fe into the nickel hydroxi…
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Highly active, durable and cost-effective electrocatalysts for water oxidation to evolve oxygen gas hold a key to a range of renewable energy solutions including water splitting and rechargeable metal-air batteries. Here, we report the synthesis of ultrathin nickel iron layered double hydroxide nanoplates on mildly oxidized multi-walled carbon nanotubes. Incorporation of Fe into the nickel hydroxide induced the formation of NiFe-layered double hydroxide. The nanoplates were covalently attached to a network of nanotubes, affording excellent electrical wiring to the nanoplates. The ultra-thin Ni-Fe layered double hydroxide nanoplates/carbon nanotube complex was found to exhibit unusually high electro-catalytic activity and stability for oxygen evolution and outperformed commercial precious metal Ir catalysts.
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Submitted 24 May, 2013; v1 submitted 13 March, 2013;
originally announced March 2013.
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Spatially resolved pump-probe study of single-layer graphene produced by chemical vapor deposition
Authors:
Brian A. Ruzicka,
Shui Wang,
Jianwei Liu,
Kian-Ping Loh,
Judy Z. Wu,
Hui Zhao
Abstract:
Carrier dynamics in single-layer graphene grown by chemical vapor deposition (CVD) is studied using spatially and temporally resolved pump-probe spectroscopy by measuring both differential transmission and differential reflection. By studying the expansion of a Gaussian spatial profile of carriers excited by a 1500-nm pump pulse with a 1761-nm probe pulse, we observe a diffusion of hot carriers of…
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Carrier dynamics in single-layer graphene grown by chemical vapor deposition (CVD) is studied using spatially and temporally resolved pump-probe spectroscopy by measuring both differential transmission and differential reflection. By studying the expansion of a Gaussian spatial profile of carriers excited by a 1500-nm pump pulse with a 1761-nm probe pulse, we observe a diffusion of hot carriers of 5500 square centimeter per second. We also observe that the expansion of the carrier density profile decreases to a slow rate within 1 ps, which is unexpected. Furthermore, by using an 810-nm probe pulse we observe that both the differential transmission and reflection change signs, but also that this sign change can be permanently removed by exposure of the graphene to femtosecond laser pulses of relatively high fluence. This indicates that the differential transmission and reflection at later times may not be directly caused by carriers, but may be from some residue material from the sample fabrication or transfer process.
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Submitted 25 April, 2012;
originally announced April 2012.
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Transition of Impurity Nanorod Orientation in Epitaxial YBCO Films on Vicinal Substrates
Authors:
Jack J. Shi,
Judy Z. Wu
Abstract:
A theoretical study of the structural transition of impurity nanorod array in epitaxial YBCO films on vicinal STO substrates is presented. Two possible types of film/substrate interface were considered with one assuming a complete coherence while the other, defective as manifested in presence of anti-phase grain boundaries. Only in the former case, the increase of the vicinal angle of the substrat…
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A theoretical study of the structural transition of impurity nanorod array in epitaxial YBCO films on vicinal STO substrates is presented. Two possible types of film/substrate interface were considered with one assuming a complete coherence while the other, defective as manifested in presence of anti-phase grain boundaries. Only in the former case, the increase of the vicinal angle of the substrate leads to a substantial change of the strain field in the film, resulting in a transition of the nanorod orientation from the normal to in-plane direction of the film. The calculation of the threshold vicinal angle for the onset of the transition and the lattice deformation of the film due to the inclusion of the impurity nanorods is in very good agreement with experimental observations.
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Submitted 23 December, 2011;
originally announced December 2011.
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Micromechanical Model for Self-Organized Impurity Nanorod Arrays in Epitaxial YBCO Films
Authors:
Jack J. Shi,
Judy Z. Wu
Abstract:
A micromechanical model based on the theory of elasticity has been developed to study the configuration of self-assembled impurity nanostructures in high temperature superconducting YBCO films. With the calculated equilibrium strain and elastic energy of the impurity doped film, a phase diagram of lattice mismatches $vs.$ elastic constants of the dopant was obtained for the energetically-preferred…
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A micromechanical model based on the theory of elasticity has been developed to study the configuration of self-assembled impurity nanostructures in high temperature superconducting YBCO films. With the calculated equilibrium strain and elastic energy of the impurity doped film, a phase diagram of lattice mismatches $vs.$ elastic constants of the dopant was obtained for the energetically-preferred orientation of impurity nanorods. The calculation of the nanorod orientation and the film lattice deformation has yielded an excellent agreement with experimental measurements.
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Submitted 23 December, 2011;
originally announced December 2011.
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Second-harmonic generation induced by electric currents in GaAs
Authors:
Brian A. Ruzicka,
Lalani K. Werake,
Guowei Xu,
Jacob B. Khurgin,
E. Ya. Sherman,
Judy Z. Wu,
Hui Zhao
Abstract:
We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser pulse. Second, we optically inject a transient current in an undoped GaAs crystal by using a pair of ultrafast laser pulses, and demonstrate that it induces the s…
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We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser pulse. Second, we optically inject a transient current in an undoped GaAs crystal by using a pair of ultrafast laser pulses, and demonstrate that it induces the same second-harmonic generation. In both cases, the induced second-order nonlinear susceptibility is proportional to the current density. This effect can be used for nondestructive, noninvasive, and ultrafast imaging of currents. These advantages are illustrated by the real-time observations of a coherent plasma oscillation and spatial resolution of current distribution in a device. This new effect also provides a mechanism for electrical control of the optical response of materials.
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Submitted 21 December, 2011;
originally announced December 2011.
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Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
Authors:
Albert D. Liao,
Justin Z. Wu,
Xinran Wang,
Kristof Tahy,
Debdeep Jena,
Hongjie Dai,
Eric Pop
Abstract:
We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene devices reveals that narrow GNRs benefit from 3D heat spreading into the SiO2, which enables their higher current density. GNRs also benefit from lateral heat f…
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We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene devices reveals that narrow GNRs benefit from 3D heat spreading into the SiO2, which enables their higher current density. GNRs also benefit from lateral heat flow to the contacts in short devices (< ~0.3 um), which allows extraction of a median GNR thermal conductivity (TC), ~80 W/m/K at 20 C across our samples, dominated by phonons. The TC of GNRs is an order of magnitude lower than that of micron-sized graphene on SiO2, suggesting strong roles of edge and defect scattering, and the importance of thermal dissipation in small GNR devices.
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Submitted 28 June, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
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Metastable giant moments in Gd-implanted GaN, Si, and sapphire
Authors:
X. Wang,
C. Timm,
X. M. Wang,
W. K. Chu,
J. Y. Lin,
H. X. Jiang,
J. Z. Wu
Abstract:
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments i…
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We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.
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Submitted 28 March, 2011;
originally announced March 2011.
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Triple sign reversal of Hall effect in HgBa_{2}CaCu_{2}O_{6} thin films after heavy-ion irradiations
Authors:
W. N. Kang,
B. W. Kang,
Q. Y. Chen,
J. Z. Wu,
Y. Bai,
W. K. Chu,
D. K. Christen,
R. Kerchner,
Sung-Ik Lee
Abstract:
Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the thi…
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Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the third sign reversal is attributed to the energy derivative of the density of states and to a temperature-dependent function related to the superconducting energy gap. These contributions prominently appear in cases where the mean free path is significantly decreased, such as our case of ion-irradiated thin films.
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Submitted 30 March, 1999;
originally announced March 1999.
