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Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties
Authors:
M. X. Guo,
C. K. Cheng,
Y. C. Liu,
C. N. Wu,
W. N. Chen,
T. Y Chen,
C. T. Wu,
C. H. Hsu,
S. Q. Zhou,
C. F. Chang,
L. H. Tjeng,
S. F. Lee,
C. F. Pai,
M. Hong,
J. Kwo
Abstract:
Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part…
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Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices.
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Submitted 11 January, 2022;
originally announced January 2022.
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Exploring the 3D architectures of deep material network in data-driven multiscale mechanics
Authors:
Zeliang Liu,
C. T. Wu
Abstract:
This paper extends the deep material network (DMN) proposed by Liu et al. (2019) to tackle general 3-dimensional (3D) problems with arbitrary material and geometric nonlinearities. It discovers a new way of describing multiscale heterogeneous materials by a multi-layer network structure and mechanistic building blocks. The data-driven framework of DMN is discussed in detail about the offline train…
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This paper extends the deep material network (DMN) proposed by Liu et al. (2019) to tackle general 3-dimensional (3D) problems with arbitrary material and geometric nonlinearities. It discovers a new way of describing multiscale heterogeneous materials by a multi-layer network structure and mechanistic building blocks. The data-driven framework of DMN is discussed in detail about the offline training and online extrapolation stages. Analytical solutions of the 3D building block with a two-layer structure in both small- and finite-strain formulations are derived based on interfacial equilibrium conditions and kinematic constraints. With linear elastic data generated by direct numerical simulations on a representative volume element (RVE), the network can be effectively trained in the offline stage using stochastic gradient descent and advanced model compression algorithms. Efficiency and accuracy of DMN on addressing the long-standing 3D RVE challenges with complex morphologies and material laws are validated through numerical experiments, including 1) hyperelastic particle-reinforced rubber composite with Mullins effect; 2) polycrystalline materials with rate-dependent crystal plasticity; 3) carbon fiber reinforced polymer (CFRP) composites with fiber anisotropic elasticity and matrix plasticity. In particular, we demonstrate a three-scale homogenization procedure of CFRP system by concatenating the microscale and mesoscale material networks. The complete learning and extrapolation procedures of DMN establish a reliable data-driven framework for multiscale material modeling and design.
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Submitted 5 July, 2020; v1 submitted 2 January, 2019;
originally announced January 2019.
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Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
Authors:
C. C. Chen,
K. H. M. Chen,
Y. T. Fanchiang,
C. C. Tseng,
S. R. Yang,
C. N. Wu,
M. X. Guo,
C. K. Cheng,
C. T. Wu,
M. Hong,
J. Kwo
Abstract:
The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with…
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The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures.
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Submitted 12 September, 2018;
originally announced September 2018.
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Crystal orientation and thickness dependence of superconductivity on tetragonal FeSe1-x thin films
Authors:
M. J. Wang,
J. Y. Luo,
T. W. Huang,
H. H. Chang,
T. K. Chen,
F. C. Hsu,
C. T Wu,
P. M. Wu,
A. M. Chang,
M. K. Wu
Abstract:
Superconductivity was recently found in the simple tetragonal FeSe structure. Recent studies suggest that FeSe is unconventional, with the symmetry of the superconducting pairing state still under debate. To tackle these problems, clean single crystals and thin films are required. Here we report the fabrication of superconducting beta-phase FeSe1-x thin films on different substrates using a puls…
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Superconductivity was recently found in the simple tetragonal FeSe structure. Recent studies suggest that FeSe is unconventional, with the symmetry of the superconducting pairing state still under debate. To tackle these problems, clean single crystals and thin films are required. Here we report the fabrication of superconducting beta-phase FeSe1-x thin films on different substrates using a pulsed laser deposition (PLD) technique. Quite interestingly, the crystal orientation, and thus, superconductivity in these thin films is sensitive to the growth temperature. At 320C, films grow preferably along c-axis, but the onset of superconductivity depends on film thickness. At 500C, films grow along (101), with little thickness dependence. These results suggest that the low temperature structural deformation previously found is crucial to the superconductivity of this material.
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Submitted 12 April, 2009;
originally announced April 2009.
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Surface optical Raman modes in InN nanostructures
Authors:
Satyaprakash Sahoo,
M. S. Hu,
C. W. Hsu,
C. T. Wu,
K. H. Chen,
L. C. Chen,
A. K. Arora,
S. Dhara
Abstract:
Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (S…
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Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.
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Submitted 5 July, 2008;
originally announced July 2008.
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Blue luminescence of Au nanoclusters embedded in silica matrix
Authors:
S. Dhara,
Sharat Chandra,
P. Magudapathy,
S. Kalavathi,
B. K. Panigrahi,
K. G. M. Nair,
V. S. Sastry,
C. W. Hsu,
C. T. Wu,
K. H. Chen,
L. C. Chen
Abstract:
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Ra…
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Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Radiative recombination of sp electrons above Fermi level to occupied d-band holes are assigned for observed luminescence peaks. Peaks at 3.1 eV and 3.4 eV are correlated to energy gaps at the X- and L-symmetry points, respectively, with possible involvement of relaxation mechanism. The blue shift of peak positions at 3.4 eV with decreasing cluster size is reported to be due to the compressive strain in small clusters. A first principle calculation based on density functional theory using the full potential linear augmented plane wave plus local orbitals (FP-LAPW+LO) formalism with generalized gradient approximation (GGA) for the exchange correlation energy is used to estimate the band gaps at the X- and L-symmetry points by calculating the band structures and joint density of states (JDOS) for different strain values in order to explain the blueshift of ~0.1 eV with decreasing cluster size around L-symmetry point.
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Submitted 29 September, 2004;
originally announced September 2004.
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Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors:
S. Dhara,
A. Datta,
C. T. Wu,
Z. H. Lan,
K. H. Chen,
Y. L. Wang,
C. W. Hsu,
L. C. Chen,
H. M. Lin,
C. C. Chen,
Y. F. Chen
Abstract:
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduc…
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Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
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Submitted 2 February, 2004;
originally announced February 2004.
