-
Single- and few-electron dynamic quantum dots in a perpendicular magnetic field
Authors:
S. J. Wright,
A. L. Thorn,
M. D. Blumenthal,
S. P. Giblin,
M. Pepper,
T. J. B. M. Janssen,
M. Kataoka,
J. D. Fletcher,
G. A. C. Jones,
C. A. Nicoll,
Godfrey Gumbs,
D. A. Ritchie
Abstract:
We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local diso…
▽ More
We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current.
△ Less
Submitted 1 September, 2010;
originally announced September 2010.
-
Accurate high speed single-electron quantum dot preparation
Authors:
S. P. Giblin,
S. J. Wright,
J. Fletcher,
M. Kataoka,
M. Pepper,
T. J. B. M. Janssen,
D. A. Ritchie,
C. A. Nicoll,
D. Anderson,
G. A. C. Jones
Abstract:
Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, tho…
▽ More
Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.
△ Less
Submitted 5 May, 2010; v1 submitted 30 March, 2010;
originally announced March 2010.
-
Parallel quantized charge pumping
Authors:
S. J. Wright,
M. D. Blumenthal,
M. Pepper,
D. Anderson,
G. A. C. Jones,
C. A. Nicoll,
D. A. Ritchie
Abstract:
Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic field the accuracy of quantization is shown to be $< $20 ppm for a current of $108.9 $pA. The scheme for parallel pumping presented in this work has applicat…
▽ More
Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic field the accuracy of quantization is shown to be $< $20 ppm for a current of $108.9 $pA. The scheme for parallel pumping presented in this work has applications in quantum information processing, the generation of single photons in pairs and bunches, neural networking and the development of a quantum standard for electrical current. All these applications will benefit greatly from the increase in output current without the characteristic decrease in accuracy as a result of high-frequency operation.
△ Less
Submitted 17 September, 2009; v1 submitted 29 June, 2009;
originally announced June 2009.
-
Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field
Authors:
S. J. Wright,
M. D. Blumenthal,
Godfrey Gumbs,
A. L. Thorn,
M. Pepper,
T. J. B. M. Janssen,
S. N. Holmes,
D. Anderson,
G. A. C. Jones,
C. A. Nicoll,
D. A. Ritchie
Abstract:
We present experimental results of high frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plat…
▽ More
We present experimental results of high frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.
△ Less
Submitted 27 November, 2008; v1 submitted 4 November, 2008;
originally announced November 2008.