Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Authors:
Patricia Almeida Carvalho,
Annett Thørgesen,
Quanbao Ma,
Daniel Nielsen Wright,
Spyros Diplas,
Augustinas Galeckas,
Alexander Azarov,
Valdas Jokubavicius,
Jianwu Sun,
Mikael Syväjärvi,
Bengt Gunnar Svensson,
Ole Martin Løvvik
Abstract:
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission…
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Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.
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Submitted 10 December, 2018; v1 submitted 17 April, 2018;
originally announced April 2018.
