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Acoustic Phonon Characteristics of Gallium Oxide Single Crystals Investigated with Brillouin-Mandelstam Light Scattering Spectroscopy
Authors:
Dylan Wright,
Erick Guzman,
Md. Sabbir Hossen Bijoy,
Richard B. Wilson,
Dinusha Herath Mudiyanselage,
Houqiang Fu,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report an investigation of the bulk and surface acoustic phonons in gallium oxide ultra-wide bandgap single crystals along various crystallographic directions using Brillouin-Mandelstam spectroscopy. Pronounced anisotropy in the acoustic phonon dispersion and velocities was observed across different crystal orientations. The measured average acoustic phonon velocities for the crystallographic d…
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We report an investigation of the bulk and surface acoustic phonons in gallium oxide ultra-wide bandgap single crystals along various crystallographic directions using Brillouin-Mandelstam spectroscopy. Pronounced anisotropy in the acoustic phonon dispersion and velocities was observed across different crystal orientations. The measured average acoustic phonon velocities for the crystallographic directions of interest are 5,250 m/s and 4,990 m/s. The surface acoustic phonons propagate approximately twice as slowly as the bulk acoustic phonons. Our results suggest that the anisotropy of heat conduction in gallium oxide results from the difference in phonon velocities rather than the phonon lifetime. The obtained information for bulk and surface acoustic phonons can be used for developing accurate theoretical models of phonon scattering and optimization of thermal and electrical transport in this technologically important ultra-wide bandgap semiconductor.
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Submitted 6 June, 2025;
originally announced June 2025.
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Nonlocal phase-change metaoptics for reconfigurable nonvolatile image processing
Authors:
Guoce Yang,
Mengyun Wang,
June Sang Lee,
Nikolaos Farmakidis,
Joe Shields,
Carlota Ruiz de Galarreta,
Stuart Kendall,
Jacopo Bertolotti,
Andriy Moskalenko,
Kairan Huang,
Andrea Alù,
C. David Wright,
Harish Bhaskaran
Abstract:
The next generation of smart imaging and vision systems will require compact and tunable optical computing hardware to perform high-speed and low-power image processing. These requirements are driving the development of computing metasurfaces to realize efficient front-end analog optical pre-processors, especially for edge-detection capability. Yet, there is still a lack of reconfigurable or progr…
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The next generation of smart imaging and vision systems will require compact and tunable optical computing hardware to perform high-speed and low-power image processing. These requirements are driving the development of computing metasurfaces to realize efficient front-end analog optical pre-processors, especially for edge-detection capability. Yet, there is still a lack of reconfigurable or programmable schemes, which may drastically enhance the impact of these devices at the system level. Here, we propose and experimentally demonstrate a reconfigurable flat optical image processor using low-loss phase-change nonlocal metasurfaces. The metasurface is configured to realize different transfer functions in spatial frequency space, when transitioning the phase-change material between its amorphous and crystalline phases. This enables edge detection and bright-field imaging modes on the same device. The metasurface is compatible with a large numerical aperture of ~0.5, making it suitable for high resolution coherent optical imaging microscopy. The concept of phase-change reconfigurable nonlocal metasurfaces may enable emerging applications of artificial intelligence-assisted imaging and vision devices with switchable multitasking.
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Submitted 17 September, 2024;
originally announced September 2024.
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Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films
Authors:
Dylan Wright,
Dinusha Herath Mudiyanselage,
Erick Guzman,
Xuke Fu,
Jordan Teeter,
Bingcheng Da,
Fariborz Kargar,
Houqiang Fu,
Alexander A. Balandin
Abstract:
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes,…
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We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.
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Submitted 13 August, 2024;
originally announced August 2024.
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Acoustic and Optical Phonons in Quasi-Two-Dimensional MPX3 Van der Waals Semiconductors
Authors:
Dylan Wright,
Zahra Ebrahim Nataj,
Erick Guzman,
Jake Polster,
Menno Bouman,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin-Mandelstam and Raman light scattering spectroscopies were conducted at room temperature to measure the acoustic and optical phonon frequencies close to…
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We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin-Mandelstam and Raman light scattering spectroscopies were conducted at room temperature to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The absorption and index of refraction were measured in the visible and infrared ranges using the reflectometry technique. We found an intriguing large variation, over ~28%, in the acoustic phonon group velocities in this group of materials with similar crystal structures. Our data indicate that the full-width-at-half-maximum of the acoustic phonon peaks is strongly affected by the optical properties and the electronic band gap. The acoustic phonon lifetime extracted for some of the materials was correlated with their thermal properties. The obtained results are important for understanding the layered van der Waals semiconductors and for assessing their potential for optoelectronic and spintronic device applications.
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Submitted 28 February, 2024;
originally announced February 2024.
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Probabilistic Photonic Computing with Chaotic Light
Authors:
Frank Brückerhoff-Plückelmann,
Hendrik Borras,
Bernhard Klein,
Akhil Varri,
Marlon Becker,
Jelle Dijkstra,
Martin Brückerhoff,
C. David Wright,
Martin Salinga,
Harish Bhaskaran,
Benjamin Risse,
Holger Fröning,
Wolfram Pernice
Abstract:
Biological neural networks effortlessly tackle complex computational problems and excel at predicting outcomes from noisy, incomplete data, a task that poses significant challenges to traditional processors. Artificial neural networks (ANNs), inspired by these biological counterparts, have emerged as powerful tools for deciphering intricate data patterns and making predictions. However, convention…
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Biological neural networks effortlessly tackle complex computational problems and excel at predicting outcomes from noisy, incomplete data, a task that poses significant challenges to traditional processors. Artificial neural networks (ANNs), inspired by these biological counterparts, have emerged as powerful tools for deciphering intricate data patterns and making predictions. However, conventional ANNs can be viewed as "point estimates" that do not capture the uncertainty of prediction, which is an inherently probabilistic process. In contrast, treating an ANN as a probabilistic model derived via Bayesian inference poses significant challenges for conventional deterministic computing architectures. Here, we use chaotic light in combination with incoherent photonic data processing to enable high-speed probabilistic computation and uncertainty quantification. Since both the chaotic light source and the photonic crossbar support multiple independent computational wavelength channels, we sample from the output distributions in parallel at a sampling rate of 70.4 GS/s, limited only by the electronic interface. We exploit the photonic probabilistic architecture to simultaneously perform image classification and uncertainty prediction via a Bayesian neural network. Our prototype demonstrates the seamless cointegration of a physical entropy source and a computational architecture that enables ultrafast probabilistic computation by parallel sampling.
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Submitted 31 January, 2024;
originally announced January 2024.
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Optical and Acoustic Phonons in Turbostratic and Cubic Boron Nitride Thin Films on Diamond Substrates
Authors:
Erick Guzman,
Fariborz Kargar,
Avani Patel,
Saurabh Vishwakarma,
Dylan Wright,
Richard B. Wilson,
David J. Smith,
Robert J. Nemanich,
Alexander A. Balandin
Abstract:
We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (111) substrates. The characteristics of different types of phonons were determined using Raman and Brillouin-Mandelstam light scattering spectroscopies…
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We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (111) substrates. The characteristics of different types of phonons were determined using Raman and Brillouin-Mandelstam light scattering spectroscopies. The atomic structure of the films was determined using high-resolution transmission electron microscopy (HRTEM) and correlated with the Raman and Brillouin-Mandelstam spectroscopy data. The HRTEM analysis revealed that the cubic boron nitride thin films consisted of a mixture of c-BN and t-BN phases, with c-BN being the dominant phase. It was found that while visible Raman spectroscopy provided information for characterizing the t-BN phase, it faced challenges in differentiating the c-BN phase either due to the presence of high-density defects or the overlapping of the Raman features with those from the B-doped diamond substrates. In contrast, Brillouin-Mandelstam spectroscopy clearly distinguishes the bulk longitudinal and surface acoustic phonons of the c-BN thin films grown on diamond substrates. Additionally, the angle-dependent surface Brillouin-Mandelstam scattering data show the peaks associated with the Rayleigh surface acoustic waves, which have higher phase velocities in c-BN films on diamond (111) substrates. These findings provide valuable insights into the phonon characteristics of the c-BN and diamond interfaces and have important implications for the thermal management of electronic devices based on ultra-wide-band-gap materials.
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Submitted 20 July, 2023;
originally announced July 2023.
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Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors
Authors:
Chelsea Q. Xia,
Jiali Peng,
Samuel Poncé,
Jay B. Patel,
Adam D. Wright,
Timothy W. Crothers,
Mathias Uller Rothmann,
Juliane Borchert,
Rebecca L. Milot,
Hans Kraus,
Qianqian Lin,
Feliciano Giustino,
Laura M. Herz,
Michael B. Johnston
Abstract:
Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of singl…
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Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge scattering in single crystals and polycrystalline films of CH$_3$NH$_3$PbI$_3$. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including transistors and modulators.
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Submitted 10 September, 2021;
originally announced September 2021.
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The arrow of time (second law) as a randomness-driven emergent property of large systems
Authors:
Derek Wright,
Roshan Klein-Seetharaman,
Susanta K. Sarkar
Abstract:
The arrow of time is an irreversible phenomenon for a system of particles undergoing reversible dynamics. Since the time of Boltzmann to this day, the arrow of time has led to debate and research. However, the enormous growth of nanotechnology and associated experimental techniques has brought the arrow of time at the forefront because of its practical implications. Using simulations of one-dimens…
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The arrow of time is an irreversible phenomenon for a system of particles undergoing reversible dynamics. Since the time of Boltzmann to this day, the arrow of time has led to debate and research. However, the enormous growth of nanotechnology and associated experimental techniques has brought the arrow of time at the forefront because of its practical implications. Using simulations of one-dimensional diffusion of a system of particles, we show that the arrow of time is an emergent property of a large system. We show that the recurrence time for a system of particles to return to its original configuration grows rapidly as the number of particles grows. Based on the simulations, we have provided the expressions for recurrence times for classical particles, Fermions, and Bosons. A system of Bosons has the shortest recurrence time, whereas a system of classical particles has the longest recurrence time. The underlying distribution around the mean recurrence time is Poisson-distributed for Bosons and Gaussian-distributed for Fermions and classical particles. The probabilistic approach to encode dynamics enables testing processes other than diffusion and quantify their effects on the recurrence time.
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Submitted 20 July, 2020;
originally announced July 2020.
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Parallel convolution processing using an integrated photonic tensor core
Authors:
Johannes Feldmann,
Nathan Youngblood,
Maxim Karpov,
Helge Gehring,
Xuan Li,
Maik Stappers,
Manuel Le Gallo,
Xin Fu,
Anton Lukashchuk,
Arslan Raja,
Junqiu Liu,
David Wright,
Abu Sebastian,
Tobias Kippenberg,
Wolfram Pernice,
Harish Bhaskaran
Abstract:
With the proliferation of ultra-high-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence, the world is generating exponentially increasing amounts of data - data that needs to be processed in a fast, efficient and smart way. These developments are pushing the limits of existing computing paradigms, and highly parallelized, fast and scalable hardware…
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With the proliferation of ultra-high-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence, the world is generating exponentially increasing amounts of data - data that needs to be processed in a fast, efficient and smart way. These developments are pushing the limits of existing computing paradigms, and highly parallelized, fast and scalable hardware concepts are becoming progressively more important. Here, we demonstrate a computational specific integrated photonic tensor core - the optical analog of an ASIC-capable of operating at Tera-Multiply-Accumulate per second (TMAC/s) speeds. The photonic core achieves parallelized photonic in-memory computing using phase-change memory arrays and photonic chip-based optical frequency combs (soliton microcombs). The computation is reduced to measuring the optical transmission of reconfigurable and non-resonant passive components and can operate at a bandwidth exceeding 14 GHz, limited only by the speed of the modulators and photodetectors. Given recent advances in hybrid integration of soliton microcombs at microwave line rates, ultra-low loss silicon nitride waveguides, and high speed on-chip detectors and modulators, our approach provides a path towards full CMOS wafer-scale integration of the photonic tensor core. While we focus on convolution processing, more generally our results indicate the major potential of integrated photonics for parallel, fast, and efficient computational hardware in demanding AI applications such as autonomous driving, live video processing, and next generation cloud computing services.
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Submitted 12 October, 2020; v1 submitted 1 February, 2020;
originally announced February 2020.
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Synthesis and Properties of Non-Curing Graphene Thermal Interface Materials
Authors:
Sahar Naghibi,
Fariborz Kargar,
Dylan Wright,
Chun Yu Tammy Huang,
Amirmahdi Mohammadzadeh,
Zahra Barani,
Ruben Salgado,
Alexander Balandin
Abstract:
Development of the next generation thermal interface materials with high thermal conductivity is important for thermal management and packaging of electronic devices. We report on the synthesis and thermal conductivity measurements of non-curing thermal paste, i.e. grease, based on mineral oil with the mixture of graphene and few-layer graphene flakes as the fillers. It was found that graphene the…
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Development of the next generation thermal interface materials with high thermal conductivity is important for thermal management and packaging of electronic devices. We report on the synthesis and thermal conductivity measurements of non-curing thermal paste, i.e. grease, based on mineral oil with the mixture of graphene and few-layer graphene flakes as the fillers. It was found that graphene thermal paste exhibits a distinctive thermal percolation threshold with the thermal conductivity revealing a sublinear dependence on the filler loading. This behavior contrasts with the thermal conductivity of curing graphene thermal interface materials, based on epoxy, where super-linear dependence on the filler loading is observed. The performance of graphene thermal paste was benchmarked against top-of-the-line commercial thermal pastes. The obtained results show that non-curing graphene thermal interface materials outperforms the best commercial pastes in terms of thermal conductivity, at substantially lower filler concentration of ~ 27 vol%. The obtained results shed light on thermal percolation mechanism in non-curing polymeric matrices laden with quasi-two-dimensional fillers. Considering recent progress in graphene production via liquid phase exfoliation and oxide reduction, we argue that our results open a pathway for large-scale industrial application of graphene in thermal management of electronics.
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Submitted 23 November, 2019;
originally announced November 2019.
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Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Authors:
Patricia Almeida Carvalho,
Annett Thørgesen,
Quanbao Ma,
Daniel Nielsen Wright,
Spyros Diplas,
Augustinas Galeckas,
Alexander Azarov,
Valdas Jokubavicius,
Jianwu Sun,
Mikael Syväjärvi,
Bengt Gunnar Svensson,
Ole Martin Løvvik
Abstract:
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission…
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Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.
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Submitted 10 December, 2018; v1 submitted 17 April, 2018;
originally announced April 2018.
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Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime
Authors:
Gareth F. Jones,
Rui M. Pinto,
Adolfo De Sanctis,
V. Karthik Nagareddy,
C. David Wright,
Helena Alves,
Monica F. Craciun,
Saverio Russo
Abstract:
Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have s…
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Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels.
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Submitted 3 October, 2017; v1 submitted 2 October, 2017;
originally announced October 2017.
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Role of Charge Traps in the Performance of Atomically-Thin Transistors
Authors:
Iddo Amit,
Tobias J. Octon,
Nicola J. Townsend,
Francesco Reale,
C. David Wright,
Cecilia Mattevi,
Monica F. Craciun,
Saverio Russo
Abstract:
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed…
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Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices.
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Submitted 16 March, 2017;
originally announced March 2017.
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F1 rotary motor of ATP synthase is driven by the torsionally-asymmetric drive shaft
Authors:
O. Kulish,
A. D. Wright,
E. M. Terentjev
Abstract:
F1F0 ATP synthase (ATPase) either facilitates the synthesis of ATP in the mitochondrial membranes and bacterial inner membranes in a process driven by the proton moving force (pmf), or uses the energy from ATP hydrolysis to pump protons against the concentration gradient across the membrane. ATPase is composed of two rotary motors, F0 and F1, which generate the opposing rotation and compete for co…
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F1F0 ATP synthase (ATPase) either facilitates the synthesis of ATP in the mitochondrial membranes and bacterial inner membranes in a process driven by the proton moving force (pmf), or uses the energy from ATP hydrolysis to pump protons against the concentration gradient across the membrane. ATPase is composed of two rotary motors, F0 and F1, which generate the opposing rotation and compete for control of their shared central gamma-shaft. Here we present a self-consistent physical model of the F1 motor as a simplified two-state Brownian ratchet based on the asymmetry of torsional elastic energy of the coiled-coil gamma-shaft. This stochastic model unifies the physical description of linear and rotary motors and explains the stepped unidirectional rotation of the $γ$-shaft, in agreement with the `binding-change' ideas of Boyer. Substituting the model parameters, all independently known from recent experiments, our model quantitatively reproduces the ATPase operation, e.g. the `no-load' angular velocity is ca. 400~rad/s anticlockwise at 4 mM ATP, in close agreement with experiment. Increasing the pmf torque exerted by F0 can slow, stop and overcome the torque generated by F1, switching from ATP hydrolysis to synthesis at a very low value of `stall torque'. We discuss the matters of the motor efficiency, which is very low if calculated from the useful mechanical work it produces - but is quite high when the `useful outcome' is measured in the number of H+ pushed against the chemical gradient in the F1 ATP-driven operation.
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Submitted 29 January, 2016;
originally announced January 2016.
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Robustness of superconductivity to structural disorder in Sr$_{0.3}$(NH$_2$)$_{y}$(NH$_3$)$_{1-y}$Fe$_2$Se$_2$
Authors:
F. R. Foronda,
S. Ghannadzadeh,
S. J. Sedlmaier,
J. D. Wright,
K. Burns,
S. J. Cassidy,
P. A. Goddard,
T. Lancaster,
S. J. Clarke,
S. J. Blundell
Abstract:
The superconducting properties of a recently discovered high $T_{\rm c}$ superconductor, Sr/ammonia-intercalated FeSe, have been measured using pulsed magnetic fields down to $4.\,\rm {K}$ and muon spin spectroscopy down to $1.5\,\rm K$. This compound exhibits intrinsic disorder resulting from random stacking of the FeSe layers along the $c$-axis that is not present in other intercalates of the sa…
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The superconducting properties of a recently discovered high $T_{\rm c}$ superconductor, Sr/ammonia-intercalated FeSe, have been measured using pulsed magnetic fields down to $4.\,\rm {K}$ and muon spin spectroscopy down to $1.5\,\rm K$. This compound exhibits intrinsic disorder resulting from random stacking of the FeSe layers along the $c$-axis that is not present in other intercalates of the same family. This arises because the coordination requirements of the intercalated Sr and ammonia moieties imply that the interlayer stacking (along $c$) involves a translation of either ${\bf a}/2$ or ${\bf b}/2$ which locally breaks tetragonal symmetry. The result of this stacking arrangement is that the Fe ions in this compound describe a body-centred tetragonal lattice in contrast to the primitive arrangement of Fe ions described in all other Fe-based superconductors. In pulsed magnetic fields the upper critical field $H_{\text{c2}}$ was found to increase on cooling with an upwards curvature that is commonly seen in type-II superconductors of a multi-band nature. Fitting the data to a two-band model and extrapolation to absolute zero gave a maximum upper critical field ${μ_0H_{\rm c2}(0)}$ of ${33(2)\,\rm T}$. A clear superconducting transition with a diamagnetic shift was also observed in transverse-field muon measurements at ${T_{\text c}\approx36.3(2)\,\rm K}$. These results demonstrate that robust superconductivity in these intercalated FeSe systems does not rely on perfect structural coherence along the $c$-axis.
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Submitted 22 October, 2015; v1 submitted 7 October, 2015;
originally announced October 2015.
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A model for the interaction of high-energy particles in straight and bent crystals implemented in Geant4
Authors:
E. Bagli,
M. Asai,
D. Brandt,
A. Dotti,
V. Guidi,
D. H. Wright
Abstract:
A model for the simulation of orientational effects in straight and bent periodic atomic structures is presented. The continuum potential approximation has been adopted.The model allows the manipulation of particle trajectories by means of straight and bent crystals and the scaling of the cross sections of hadronic and electromagnetic processes for channeled particles. Based on such a model, an ex…
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A model for the simulation of orientational effects in straight and bent periodic atomic structures is presented. The continuum potential approximation has been adopted.The model allows the manipulation of particle trajectories by means of straight and bent crystals and the scaling of the cross sections of hadronic and electromagnetic processes for channeled particles. Based on such a model, an extension of the Geant4 toolkit has been developed. The code has been validated against data from channeling experiments carried out at CERN.
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Submitted 1 July, 2014; v1 submitted 23 March, 2014;
originally announced March 2014.
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The upper critical field of NaFe$_{1-x}$Co$_x$As superconductors
Authors:
S. Ghannadzadeh,
J. D. Wright,
F. R. Foronda,
S. J. Blundell,
S. J. Clarke,
P. A. Goddard
Abstract:
The upper critical field of NaFe$_{1-x}$Co$_x$As was measured from $x=0$ to $x=0.08$, with the magnetic field applied parallel ($H_{\rm c2}^\parallel$) and normal ($H_{\rm c2}^\perp$) to the planes. The data were fitted using one-band and two-band models. The orbital and paramagnetic components of the upper critical field were extracted for $H_{\rm c2}^\parallel$, which we find to to be strongly d…
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The upper critical field of NaFe$_{1-x}$Co$_x$As was measured from $x=0$ to $x=0.08$, with the magnetic field applied parallel ($H_{\rm c2}^\parallel$) and normal ($H_{\rm c2}^\perp$) to the planes. The data were fitted using one-band and two-band models. The orbital and paramagnetic components of the upper critical field were extracted for $H_{\rm c2}^\parallel$, which we find to to be strongly dominated by paramagnetic pair-breaking. In the parent compound the paramagnetic limit is equal to the value expected by BCS theory. However, substitution of Fe by Co leads to an enhancement above the BCS limit by a factor of approximately 1.6. In the over-doped region, we observe a significant convex curvature in $H_{\rm c2}^\perp$ at low temperatures, which we attribute to the two-band nature of the superconductivity and the asymmetry between the two bands. Additionally, we discuss the behavior of critical field anisotropy, coherence length $ξ$, and the penetration depth $λ$.
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Submitted 11 December, 2013;
originally announced December 2013.
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Magnetic fluctuations and spin freezing in nonsuperconducting LiFeAs derivatives
Authors:
J. D. Wright,
M. J. Pitcher,
W. Trevelyan-Thomas,
T. Lancaster,
P. J. Baker,
F. L. Pratt,
S. J. Clarke,
S. J. Blundell
Abstract:
We present detailed magnetometry and muon-spin rotation data on polycrystalline samples of overdoped, non-superconducting LiFe$_{1-x}$Ni$_x$As ($x = 0.1,\,0.2$) and Li$_{1-y}$Fe$_{1+y}$As ($0\leq y\leq 0.04$) as well as superconducting LiFeAs. While LiFe$_{1-x}$Ni$_x$As exhibits weak antiferromagnetic fluctuations down to $1.5\,{\rm K}$, Li$_{1-y}$Fe$_{1+y}$As samples, which have a much smaller de…
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We present detailed magnetometry and muon-spin rotation data on polycrystalline samples of overdoped, non-superconducting LiFe$_{1-x}$Ni$_x$As ($x = 0.1,\,0.2$) and Li$_{1-y}$Fe$_{1+y}$As ($0\leq y\leq 0.04$) as well as superconducting LiFeAs. While LiFe$_{1-x}$Ni$_x$As exhibits weak antiferromagnetic fluctuations down to $1.5\,{\rm K}$, Li$_{1-y}$Fe$_{1+y}$As samples, which have a much smaller deviation from the $1:1:1$ stoichiometry, show a crossover from ferromagnetic to antiferromagnetic fluctuations on cooling and a freezing of dynamically fluctuating moments at low temperatures. We do not find any signatures of time-reversal symmetry breaking in stoichiometric LiFeAs that would support recent predictions of triplet pairing.
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Submitted 7 August, 2013;
originally announced August 2013.
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Stretchable liquid crystal blue phase gels
Authors:
F. Castles,
S. M. Morris,
J. M. C. Hung,
M. M. Qasim,
A. D. Wright,
S. Nosheen,
S. S. Choi,
B. I. Outram,
S. J. Elston,
C. Burgess,
L. Hill,
T. D. Wilkinson,
H. J. Coles
Abstract:
Liquid crystalline polymers are materials of considerable scientific interest and technological value to society [1-3]. An important subset of such materials exhibit rubber-like elasticity; these can combine the remarkable optical properties of liquid crystals with the favourable mechanical properties of rubber and, further, exhibit behaviour not seen in either type of material independently [2].…
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Liquid crystalline polymers are materials of considerable scientific interest and technological value to society [1-3]. An important subset of such materials exhibit rubber-like elasticity; these can combine the remarkable optical properties of liquid crystals with the favourable mechanical properties of rubber and, further, exhibit behaviour not seen in either type of material independently [2]. Many of their properties depend crucially on the particular mesophase employed. Stretchable liquid crystalline polymers have previously been demonstrated in the nematic, chiral nematic, and smectic mesophases [2,4]. Here were report the fabrication of a stretchable gel of blue phase I, which forms a self-assembled, three-dimensional photonic crystal that may have its optical properties manipulated by an applied strain and, further, remains electro-optically switchable under a moderate applied voltage. We find that, unlike its undistorted counterpart, a mechanically deformed blue phase exhibits a Pockels electro-optic effect, which sets out new theoretical challenges and new possibilities for low-voltage electro-optic devices.
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Submitted 26 January, 2014; v1 submitted 15 August, 2012;
originally announced August 2012.
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Enhancement of superconducting transition temperature of FeSe by intercalation of a molecular spacer layer
Authors:
Matthew Burrard-Lucas,
David G. Free,
Stefan J. Sedlmaier,
Jack D. Wright,
Simon J. Cassidy,
Yoshiaki Hara,
Alex J. Corkett,
Tom Lancaster,
Peter J. Baker,
Stephen J. Blundell,
Simon J. Clarke
Abstract:
The recent discovery of high temperature superconductivity in a layered iron arsenide has led to an intensive search to optimize the superconducting properties of iron-based superconductors by changing the chemical composition of the spacer layer that is inserted between adjacent anionic iron arsenide layers. Until now, superconductivity has only been found in compounds with a cationic spacer laye…
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The recent discovery of high temperature superconductivity in a layered iron arsenide has led to an intensive search to optimize the superconducting properties of iron-based superconductors by changing the chemical composition of the spacer layer that is inserted between adjacent anionic iron arsenide layers. Until now, superconductivity has only been found in compounds with a cationic spacer layer consisting of metal ions: Li+, Na+, K+, Ba2+ or a PbO-type or perovskite-type oxide layer. Electronic doping is usually necessary to control the fine balance between antiferromagnetism and superconductivity. Superconductivity has also been reported in FeSe, which contains neutral layers similar in structure to those found in the iron arsenides but without the spacer layer. Here we demonstrate the synthesis of Lix(NH2)y(NH3)1-yFe2Se2 (x ~0.6 ; y ~ 0.2), with lithium ions, lithium amide and ammonia acting as the spacer layer, which exhibits superconductivity at 43(1) K, higher than in any FeSe-derived compound reported so far and four times higher at ambient pressure than the transition temperature, Tc, of the parent Fe1.01Se. We have determined the crystal structure using neutron powder diffraction and used magnetometry and muon-spin rotation data to determine the superconducting properties. This new synthetic route opens up the possibility of further exploitation of related molecular intercalations in this and other systems in order to greatly optimize the superconducting properties in this family.
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Submitted 30 March, 2012; v1 submitted 22 March, 2012;
originally announced March 2012.
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The gradual destruction of magnetism in the superconducting family NaFe(1-x)CoxAs
Authors:
J. D. Wright,
T. Lancaster,
I. Franke,
A. J. Steele,
J. S. Möller,
M. J. Pitcher,
A. J. Corkett,
D. R. Parker,
D. G. Free,
F. L. Pratt,
P. J. Baker,
S. J. Clarke,
S. J. Blundell
Abstract:
The interplay and coexistence of superconducting, magnetic and structural order parameters in NaFe{1-x}Co{x}As has been studied using SQUID magnetometry, muon-spin rotation and synchrotron x-ray powder diffraction. Substituting Fe by Co weakens the ordered magnetic state through both a suppression of T_N and a reduction in the size of the ordered moment. Upon further substitution of Fe by Co the h…
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The interplay and coexistence of superconducting, magnetic and structural order parameters in NaFe{1-x}Co{x}As has been studied using SQUID magnetometry, muon-spin rotation and synchrotron x-ray powder diffraction. Substituting Fe by Co weakens the ordered magnetic state through both a suppression of T_N and a reduction in the size of the ordered moment. Upon further substitution of Fe by Co the high sensitivity of the muon as a local magnetic probe reveals a magnetically disordered phase, in which the size of the moment continues to decrease and falls to zero around the same point at which the magnetically-driven structural distortion is no longer resolvable. Both magnetism and the structural distortion are weakened as the robust superconducting state is established.
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Submitted 2 December, 2011;
originally announced December 2011.
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A Bayesian approach to magnetic moment determination using muSR
Authors:
S. J. Blundell,
A. J. Steele,
T. Lancaster,
J. D. Wright,
F. L. Pratt
Abstract:
A significant challenge in zero-field muSR experiments arises from the uncertainty in the muon site. It is possible to calculate the dipole field (and hence precession frequency nu) at any particular site given the magnetic moment mu and magnetic structure. One can also evaluate f(nu), the probability distribution function of nu assuming that the muon site can be anywhere within the unit cell with…
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A significant challenge in zero-field muSR experiments arises from the uncertainty in the muon site. It is possible to calculate the dipole field (and hence precession frequency nu) at any particular site given the magnetic moment mu and magnetic structure. One can also evaluate f(nu), the probability distribution function of nu assuming that the muon site can be anywhere within the unit cell with equal probability, excluding physically forbidden sites. Since nu is obtained from experiment, what we would like to know is g(mu|nu), the probability density function of mu given the observed nu. This can be obtained from our calculated f(nu/mu) using Bayes' theorem. We describe an approach to this problem which we have used to extract information about real systems including a low-moment osmate compound, a family of molecular magnets, and an iron-arsenide compound.
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Submitted 8 November, 2011;
originally announced November 2011.
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Effect of Rb and Cs-doping on superconducting properties of MgB2 thin films
Authors:
R K Singh,
Y Shen,
R Gandikota,
D Wright,
C Carvalho,
J M Rowell,
N Newman
Abstract:
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) f…
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Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) for similar experiments on MgB2 powders. The lack of a significant change in Tc and intra-granular carrier scattering suggests that Rb and Cs diffuse into the film, but do not enter the grains. Instead, the observed changes in the electrical properties, including a significant drop in Jc and an increase in delta rho (rho300-rho40), arise from a decrease in inter-granular connectivity due to segregation of the heavy alkaline metals and other impurities (i.e. C and O) introduced into the grain boundary regions during the anneals.
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Submitted 25 September, 2007;
originally announced September 2007.
