Showing 1–8 of 8 results for author: Wouters, D

Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Authors: Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam, Dirk J. Wouters, Rainer Waser, Patrick E. Hopkins, Joyeeta Nag, Daniel Bedau

Abstract: Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium doped V2O3 across varying concentrations, spanning the doping induced metal-insulator transition. In addition, different oxygen stoichiometries and… ▽ More Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium doped V2O3 across varying concentrations, spanning the doping induced metal-insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%-30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600-1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80-450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3. △ Less

Submitted 16 September, 2024; originally announced September 2024.

Comments: Submitted to APL

Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices

Authors: Johannes Mohr, Tyler Hennen, Daniel Bedau, Rainer Waser, Dirk J. Wouters

Abstract: The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% doping. A simulation model based on a scaling law description of the phase transition and percolative behavio… ▽ More The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% doping. A simulation model based on a scaling law description of the phase transition and percolative behavior in a resistor lattice is developed. This is used to show that despite significant deviations in the film structure from single crystals, the transition behavior is very similar. Finally, the influence of the variability between grains on the characteristics of scaled devices is investigated and found to allow for scaling down to at least 50 nm device width. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design

Authors: Tyler Hennen, Leon Brackmann, Tobias Ziegler, Sebastian Siegel, Stephan Menzel, Rainer Waser, Dirk J. Wouters, Daniel Bedau

Abstract: We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cros… ▽ More We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cross-correlations between the switching parameters, while non-linear transformations ensure agreement with both cycle-to-cycle (C2C) and device-to-device (D2D) variability. Benchmarks show that this statistically comprehensive model achieves read/write throughputs exceeding those of even highly simplified and deterministic compact models. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: This work has been submitted to the IEEE for possible publication. Code is available at https://zenodo.org/doi/10.5281/zenodo.10942560

Fabrication of highly resistive NiO thin films for nanoelectronic applications

Authors: Johannes Mohr, Tyler Hennen, Daniel Bedau, Joyeeta Nag, Rainer Waser, Dirk J. Wouters

Abstract: Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster anal… ▽ More Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported. △ Less

Submitted 21 July, 2022; originally announced July 2022.

A High Throughput Generative Vector Autoregression Model for Stochastic Synapses

Authors: T. Hennen, A. Elias, J. F. Nodin, G. Molas, R. Waser, D. J. Wouters, D. Bedau

Abstract: By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as betwee… ▽ More By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as between the different device parameters. We address this challenge with a high throughput generative model for synaptic arrays that is based on a recently available type of electrical measurement data for resistive memory cells. We map this real world data onto a vector autoregressive stochastic process to accurately reproduce the device parameters and their cross-correlation structure. While closely matching the measured data, our model is still very fast; we provide parallelized implementations for both CPUs and GPUs and demonstrate array sizes above one billion cells and throughputs exceeding one hundred million weight updates per second, above the pixel rate of a 30 frames/s 4K video stream. △ Less

Submitted 10 May, 2022; originally announced May 2022.

ACM Class: G.3; B.3.1

Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance

Authors: T. Hennen, E. Wichmann, R. Waser, D. J. Wouters, D. Bedau

Abstract: Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a… ▽ More Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a deliberate addition of series resistance, which can be done either by integrating resistors on-chip or by connecting external components to the wafer probing system. The former approach is considered inflexible because the resistance value attached to a given device cannot be changed or removed, while the latter approach tends to create parasitic effects that impact controllability and interfere with measurements. In this work we introduce a circuit design for flexible characterization of two-terminal nanodevices that provides a programmatically adjustable external series resistance while maintaining low parasitic capacitance. Experimental demonstrations are given that show the impact of the series resistance on NDR and resistive switching measurements. △ Less

Submitted 30 November, 2021; originally announced December 2021.

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Authors: D. Babich, J. Tranchant, C. Adda, B. Corraze, M. -P. Besland, P. Warnicke, D. Bedau, P. Bertoncini, J. -Y. Mevellec, B. Humbert, J. Rupp, T. Hennen, D. Wouters, R. Llopis, L. Cario, E. Janod

Abstract: Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still… ▽ More Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics. △ Less

Submitted 20 October, 2021; v1 submitted 11 May, 2021; originally announced May 2021.

Comments: 14 pages, 5 figures + Supplementary Materials (14 pages, 7 figures)

Current-limiting amplifier for high speed measurement of resistive switching data

Authors: T. Hennen, E. Wichmann, A. Elias, J. Lille, O. Mosendz, R. Waser, D. J. Wouters, D. Bedau

Abstract: Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cell… ▽ More Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in such a way to suppress runaway transitions. Using this circuit, we demonstrate the acquisition of $10^5$ I-V loops per second without the use of on-wafer current limiting transistors. This setup brings voltage sweeping measurements to a relevant timescale for applications, and enables many new experimental possibilities for device evaluation in a statistical context. △ Less

Submitted 10 February, 2021; originally announced February 2021.

ACM Class: B.3.1; B.7.1