Showing 1–15 of 15 results for author: Wong, H - P

High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors

Authors: Haotian Su, Yuan-Mau Lee, Tara Peña, Sydney Fultz-Waters, Jimin Kang, Çağıl Köroğlu, Sumaiya Wahid, Christina J. Newcomb, Young Suh Song, H. -S. Philip Wong, Shan X. Wang, Eric Pop

Abstract: Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous ind… ▽ More Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of ~180 °C and ~340 °C on SiO${_2}$ and HfO${_2}$ substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance (TBC) of 35 ${\pm}$ 12 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on SiO${_2}$, and 51 ${\pm}$ 14 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on HfO${_2}$. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications. △ Less

Submitted 22 April, 2025; v1 submitted 28 January, 2025; originally announced January 2025.

Journal ref: ACS Nano (2025)

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier

Authors: Raisul Islam, Shengjun Qin, Sanchit Deshmukh, Zhouchangwan Yu, Cagil Koroglu, Asir Intisar Khan, Kirstin Schauble, Krishna C. Saraswat, Eric Pop, H. -S. Philip Wong

Abstract: Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between… ▽ More Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

Authors: Alvin Tang, Aravindh Kumar, Marc Jaikissoon, Krishna Saraswat, H. -S. Philip Wong, Eric Pop

Abstract: Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for ba… ▽ More Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{μA/μm}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing. △ Less

Submitted 4 September, 2021; originally announced September 2021.

Journal ref: ACS Appl. Mater. Interfaces 13, 41866 (2021)

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Authors: Aravindh Kumar, Alvin Tang, H. -S. Philip Wong, Krishna Saraswat

Abstract: Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line… ▽ More Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line model (TLM) structures, before and after dielectric encapsulation. We report contact resistance values as low as 330 ohm-um, which is the lowest value reported to date. We further study the effect of Al2O3 encapsulation on variability in contact resistance and other device metrics. Finally, we note some deviations in the TLM model for short-channel devices in the back-gated configuration and discuss possible modifications to improve the model accuracy. △ Less

Submitted 20 February, 2022; v1 submitted 16 June, 2021; originally announced June 2021.

Comments: 4 pages, 5 figures, to be published in IEEE IITC 2021 conference proceedings; fixed labels in Fig 4(b) and removed blank page at the end

Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

Authors: Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng, Chao-Kai Wen, H. -S. Philip Wong, Shuangyuan Pan, Rongtan Li, Yanfeng Zhang, Qiang Fu, Boris I. Yakobson, Wen-Hao Chang, Lain-Jong Li

Abstract: We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations. We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations. △ Less

Submitted 1 June, 2021; v1 submitted 31 May, 2021; originally announced May 2021.

Journal ref: Nature 579, 219-223 (2020)

Scaling Theory of Two-Dimensional Field Effect Transistors

Authors: Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong, Eric Pop

Abstract: We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide thickness. Specifically, for symmetric double gate (DG) FETs the scale length (Λ) varies linearly with the gate oxide thickness(t_{ox}) as Λ ~ 3/4t_{ox}. The ga… ▽ More We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide thickness. Specifically, for symmetric double gate (DG) FETs the scale length (Λ) varies linearly with the gate oxide thickness(t_{ox}) as Λ ~ 3/4t_{ox}. The gate oxide dielectric permittivity and the semiconductor channel thickness do not affect the device electrostatics for such device geometries. For an asymmetric device such as single gate (SG) FETs, the fringing fields have a second order effect on the scale length. However, like symmetric DG FETs, the scale length in asymmetric FETs is also ultimately limited by the physical gate oxide thickness. We compare our theoretical predictions for scaled monolayer MoS2 DG FETs. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube

Authors: Stephanie M. Bohaichuk, Miguel Muñoz Rojo, Gregory Pitner, Connor J. McClellan, Feifei Lian, Jason Li, Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, H. -S. Philip Wong, Eric Pop

Abstract: Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single… ▽ More Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 $μW$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Journal ref: ACS Nano (2019)

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Authors: Christopher M. Neumann, Kye L. Okabe, Eilam Yalon, Ryan W. Grady, H. -S. Philip Wong, Eric Pop

Abstract: Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary contacts and thermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using… ▽ More Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary contacts and thermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using a monolayer semiconductor interface, three-atom thick MoS2. The former reduces the switching volume of the phase change material and yields a 70% reduction in reset current versus typical 150 nm diameter mushroom cells. The enhanced thermal confinement achieved with the ultra-thin (~6 Å) MoS2 yields an additional 30% reduction in switching current and power. We also use detailed simulations to show that further tailoring the electrical and thermal interfaces of such PCM cells toward their fundamental limits could lead up to a six-fold benefit in power efficiency. △ Less

Submitted 1 March, 2019; originally announced March 2019.

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

Authors: Michal J. Mleczko, Runjie, Xu, Kye Okabe, Hsueh-Hui Kuo, Ian R. Fisher, H. -S. Philip Wong, Yoshio Nishi, Eric Pop

Abstract: Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 um long devices allow us to separate intrinsic and contact resista… ▽ More Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 um long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3 to 20 layers thick). High-field electrical measurements and electro-thermal modeling demonstrate that ultra-thin WTe2 can carry remarkably high current density (approaching 50 MA/cm2, higher than most common interconnect metals) despite a very low thermal conductivity (of the order ~3 W/m/K). These results suggest several pathways for air-stable technological viability of this layered semimetal. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Journal ref: ACS Nano, July 2016

Picosecond electric-field-induced threshold switching in phase-change materials

Authors: Peter Zalden, Michael J. Shu, Frank Chen, Xiaoxi Wu, Yi Zhu, Haidan Wen, Scott Johnston, Zhi-Xun Shen, Patrick Landreman, Mark Brongersma, Scott W. Fong, H. -S. Philip Wong, Meng-Ju Sher, Peter Jost, Matthias Kaes, Martin Salinga, Alexander von Hoegen, Matthias Wuttig, Aaron Lindenberg

Abstract: Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphou… ▽ More Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on sub-picosecond time-scales - faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch. △ Less

Submitted 8 July, 2016; v1 submitted 4 February, 2016; originally announced February 2016.

Comments: 6 pages manuscript with 3 figures and 8 pages supplementary material

Journal ref: Phys. Rev. Lett. 117, 067601 (2016)

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Authors: Chi-Shuen Lee, Eric Pop, Aaron D. Franklin, Wilfried Haensch, H. -S. Philip Wong

Abstract: We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs accordin… ▽ More We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch. We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm. Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/μm will enable CNFET technology to meet the ITRS target of drive current (1.33 mA/μm), which is within reach of modern experimental capabilities △ Less

Submitted 15 March, 2015; originally announced March 2015.

Comments: 8 pages, 14 figures, will be submitted to IEEE transactions on electron devices

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

Authors: Chi-Shuen Lee, Eric Pop, Aaron D. Franklin, Wilfried Haensch, H. -S. Philip Wong

Abstract: We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depe… ▽ More We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depending on the CNT diameter; (iii) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; (iv) small-signal capacitances including the CNT quantum capacitance effect to account for the decreasing gate capacitance at high gate bias. The CNFET model captures dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes. △ Less

Submitted 15 March, 2015; originally announced March 2015.

Comments: 8 pages, 10 figures, will be submitted to IEEE transactions on electron devices

Metal Oxide Resistive Memory using Graphene Edge Electrode

Authors: Seunghyun Lee, Joon Sohn, Zizhen Jiang, Hong-Yu Chen, H. -S. Philip Wong

Abstract: The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three dimensionally interleav… ▽ More The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory stacked in a vertical three dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices. △ Less

Submitted 20 August, 2015; v1 submitted 9 February, 2015; originally announced February 2015.

Comments: 41 pages, 15 figures

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Authors: Sukru Burc Eryilmaz, Duygu Kuzum, Rakesh Jeyasingh, SangBum Kim, Matthew BrightSky, Chung Lam, H. -S. Philip Wong

Abstract: Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to si… ▽ More Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance. △ Less

Submitted 13 July, 2014; v1 submitted 19 June, 2014; originally announced June 2014.

Comments: Original article can be found here: http://journal.frontiersin.org/Journal/10.3389/fnins.2014.00205/abstract

Journal ref: Front Neurosci. 8, 205 (2014)

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements

Authors: Joseph A. Sulpizio, Arash Hazeghi, Georgi Diankov, David Goldhaber-Gordon, H. -S. Philip Wong

Abstract: We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolutio… ▽ More We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the performance of our capacitance bridge by measuring the quantum capacitance of top-gated graphene devices and comparing against results obtained with the highest resolution commercially-available capacitance measurement bridge. Under identical test conditions, our bridge exceeds the resolution of the commercial tool by up to several orders of magnitude. △ Less

Submitted 27 September, 2010; originally announced September 2010.

Comments: (1)AH and JAS contributed equally to this work. 6 pages, 5 figures