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Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers
Authors:
Philipp Moser,
Lukas M. Wolz,
Alex Henning,
Andreas Thurn,
Matthias Kuhl,
Peirui Ji,
Pedro Soubelet,
Martin Schalk,
Johanna Eichhorn,
Ian D. Sharp,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Combining a precise sputter etching method with subsequent AlO$_x$ growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_2$ and AlO$_x$. The transfer of MoSe$_2$ monolayers onto these dielectrically modulated substrates results in formation of lateral heterojunctions, with the flat substrate topography leading to minimal strain across the…
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Combining a precise sputter etching method with subsequent AlO$_x$ growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_2$ and AlO$_x$. The transfer of MoSe$_2$ monolayers onto these dielectrically modulated substrates results in formation of lateral heterojunctions, with the flat substrate topography leading to minimal strain across the junction. Kelvin probe force microscopy (KPFM) measurements show significant variations in the contact potential difference (CPD) across the interface, with AlO$_x$ regions inducing a 230~mV increase in CPD. Spatially resolved photoluminescence spectroscopy reveals shifts in spectral weight of neutral and charged exciton species across the different dielectric regions. On the AlO$_x$ side, the Fermi energy moves closer to the conduction band, leading to a higher trion-to-exciton ratio, indicating a bandgap shift consistent with CPD changes. In addition, transient reflection spectroscopy highlights the influence of the dielectric environment on carrier dynamics, with the SiO$_2$ side exhibiting rapid carrier decay typical of neutral exciton recombination. In contrast, the AlO$_x$ side shows slower, mixed decay behavior consistent with conversion of trions back into excitons. These results demonstrate how dielectric substrate engineering can tune the electronic and optical characteristics of proximal two-dimensional materials, allowing scalable fabrication of advanced junctions for novel (opto)electronics applications.
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Submitted 21 October, 2024; v1 submitted 27 September, 2024;
originally announced September 2024.
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Creation of equal-spin triplet superconductivity at the Al/EuS interface
Authors:
Simon Diesch,
Peter Machon,
Michael Wolz,
Christoph Sürgers,
Detlef Beckmann,
Wolfgang Belzig,
Elke Scheer
Abstract:
In conventional superconductors, electrons of opposite spins are bound into Cooper pairs. However, when the superconductor is in contact with a non-uniformly ordered ferromagnet, an exotic type of superconductivity can appear at the interface, with electrons bound into three possible spin-triplet states. Triplet pairs with equal spin play a vital role in low-dissipation spintronics. Despite the ob…
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In conventional superconductors, electrons of opposite spins are bound into Cooper pairs. However, when the superconductor is in contact with a non-uniformly ordered ferromagnet, an exotic type of superconductivity can appear at the interface, with electrons bound into three possible spin-triplet states. Triplet pairs with equal spin play a vital role in low-dissipation spintronics. Despite the observation of supercurrents through ferromagnets, spectroscopic evidence for the existence of equal-spin triplet pairs is still missing. Here we show a theoretical model that reveals a characteristic gap structure in the quasiparticle density of states which provides a unique signature for the presence of equal-spin triplet pairs. By scanning tunnelling spectroscopy we measure the local density of states to reveal the spin configuration of triplet pairs. We demonstrate that the Al/EuS interface causes strong and tunable spin-mixing by virtue of its spin-dependent transmission.
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Submitted 21 November, 2018;
originally announced November 2018.
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Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
Authors:
F. Feix,
T. Flissikowski,
K. K. Sabelfeld,
V. M. Kaganer,
M. Wölz,
L. Geelhaar,
H. T. Grahn,
O. Brandt
Abstract:
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence…
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We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of photoluminescence transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power law decay for (In,Ga)N/GaN{0001} quantum wells and disks.
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Submitted 20 March, 2017;
originally announced March 2017.
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Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime
Authors:
Jonas Lähnemann,
Timur Flissikowski,
Martin Wölz,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt,
Uwe Jahn
Abstract:
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewall…
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Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.
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Submitted 12 October, 2017; v1 submitted 12 July, 2016;
originally announced July 2016.
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Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
Authors:
Jonas Lähnemann,
Christian Hauswald,
Martin Wölz,
Uwe Jahn,
Michael Hanke,
Lutz Geelhaar,
Oliver Brandt
Abstract:
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning electron microscope and micro-photoluminescence spectroscopy on single nanowires to learn more about the mechanisms underlying this emission. We obser…
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(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning electron microscope and micro-photoluminescence spectroscopy on single nanowires to learn more about the mechanisms underlying this emission. We observe a shift of the emission energy along the stack of six insertions within single nanowires that may be explained by compositional pulling. Our results also corroborate reports that the localization of carriers at potential fluctuations within the insertions plays a crucial role for the luminescence of these nanowire based emitters. Furthermore, we resolve contributions from both structural and point defects in our measurements.
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Submitted 7 May, 2014;
originally announced May 2014.
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Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Authors:
Martin Wölz,
Jonas Lähnemann,
Oliver Brandt,
Vladimir M. Kaganer,
Manfred Ramsteiner,
Carsten Pfüller,
Christian Hauswald,
C. N. Huang,
Lutz Geelhaar,
Henning Riechert
Abstract:
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminesce…
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GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range from 2.2 eV to 2.5 eV depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.
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Submitted 29 October, 2012;
originally announced October 2012.
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Current path in light emitting diodes based on nanowire ensembles
Authors:
Friederich Limbach,
Christian Hauswald,
Jonas Lähnemann,
Martin Wölz,
Oliver Brandt,
Achim Trampert,
Michael Hanke,
Uwe Jahn,
Raffaella Calarco,
Lutz Geelhaar,
Henning Riechert
Abstract:
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescen…
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Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In,Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.
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Submitted 26 October, 2012;
originally announced October 2012.
