-
On the origin of tail states and VOC losses in Cu(In,Ga)Se2
Authors:
Omar Ramírez,
Jiro Nishinaga,
Felix Dingwell,
Taowen Wang,
Aubin Prot,
Max Hilaire Wolter,
Vibha Ranjan,
Susanne Siebentritt
Abstract:
The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail s…
▽ More
The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect of compositional variations and alkali incorporation into single crystals. The results demonstrate that alkalis decrease the density of tail states despite the absence of grain boundaries, suggesting that there is more to alkalis than just grain boundary effects. Moreover, an increase in doping as a result of alkali incorporation is shown to contribute to the reduced tail states, which are demonstrated to arise largely from electrostatic potential fluctuations and to be determined by grain interior properties. By analyzing the voltage loss in high-efficiency polycrystalline and single crystalline devices, this work presents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2 based on the combined effect of doping on tail states and VOC.
△ Less
Submitted 3 December, 2022;
originally announced December 2022.
-
Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
Authors:
Marc Drögeler,
Christopher Franzen,
Frank Volmer,
Tobias Pohlmann,
Luca Banszerus,
Maik Wolter,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$ substrate and the subsequent dry transfer of a graphene-hBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingr…
▽ More
We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 μm in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$ substrate and the subsequent dry transfer of a graphene-hBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. Interestingly, long spin lifetimes are observed despite the fact that both conductive scanning force microscopy and contact resistance measurements reveal the existence of conducting pinholes throughout the MgO spin injection/detection barriers. The observed enhancement of the spin lifetime in single layer graphene by a factor of 6 compared to previous devices exceeds current models of contact-induced spin relaxation which paves the way towards probing intrinsic spin properties of graphene.
△ Less
Submitted 8 February, 2016;
originally announced February 2016.
-
Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al$_2$O$_3$ spin injection and detection barriers
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Kenji Watanabe,
Takashi Taniguchi,
Daniel Neumaier,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at ro…
▽ More
We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at room temperature combined with carrier mobilities which exceed 20,000 cm$^2$/(Vs). Despite strongly enhanced spin and charge transport properties, the MgO injection barriers in these devices exhibit conducting pinholes which still limit the measured spin lifetimes. We demonstrate that these pinholes can be partially diminished by an oxygen treatment of a trilayer graphene device which is seen by a strong increase of the contact resistance area products of the Co/MgO electrodes. At the same time, the spin lifetime increases from 1 ns to 2 ns. We believe that the pinholes partially result from the directional growth in molecular beam epitaxy. For a second set of devices, we therefore used atomic layer deposition of Al$_2$O$_3$ which offers the possibility to isotropically deposit more homogeneous barriers. While the contacts of the as-fabricated bilayer graphene devices are non-conductive, we can partially break the oxide barriers by voltage pulses. Thereafter, the devices also exhibit nanosecond spin lifetimes.
△ Less
Submitted 9 July, 2015;
originally announced July 2015.
-
Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
Authors:
Marc Drögeler,
Frank Volmer,
Maik Wolter,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Gernot Güntherodt,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that roo…
▽ More
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.
△ Less
Submitted 10 June, 2014;
originally announced June 2014.
