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Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves
Authors:
Alexander Breindel,
Yuhang Deng,
Camilla M. Moir,
Yuankan Fang,
Sheng Ran,
Hongbo Lou,
Shubin Li,
Qiaoshi Zeng,
Lei Shu,
Christian T. Wolowiec,
Ivan K. Schuller,
Priscila F. S. Rosa,
Zachary Fisk,
John Singleton,
M. Brian Maple
Abstract:
Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via electrical resistivity measurements as a function of temperature T, magnetic field B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic field modulated mi…
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Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via electrical resistivity measurements as a function of temperature T, magnetic field B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic field modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared to those of the Kondo insulator SmB6 to address the question of whether FeSi is a d-electron analogue of an f-electron Kondo insulator and, in addition, a topological Kondo insulator. The overall behavior of the magnetoresistance MR of FeSi at temperatures above and below the onset temperature (T_S) 19 K of the conducting surface state is similar to that of SmB6. The two energy gaps, inferred from the resistivity data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of T_S. This behavior is similar to that reported for SmB6, except that the two energy gaps in SmB6 decrease with pressure before dropping abruptly at T_S. The MFMMS measurements showed a sharp feature at T_S (19 K) for FeSi, but no such feature was observed at T_S 4.5 K for SmB6. The absence of a feature at T_S for SmB6 may be due to experimental issues and will be the subject of a future investigation.
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Submitted 24 March, 2022;
originally announced March 2022.
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Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers
Authors:
Christian T. Wolowiec,
Juan Gabriel Ramírez,
Min-Han Lee,
Nicolas M. Vargas,
Ali C. Basaran,
Pavel Salev,
Ivan K. Schuller
Abstract:
We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromag…
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We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film.
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Submitted 23 December, 2021;
originally announced December 2021.
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From hidden-order to antiferromagnetism: electronic structure changes in Fe-doped URu$_{2}$Si$_{2}$
Authors:
Emmanouil Frantzeskakis,
Ji Dai,
Cédric Bareille,
Tobias C. Rödel,
Monika Güttler,
Sheng Ran,
Noravee Kanchanavatee,
Kevin Huang,
Naveen Pouse,
Christian T. Wolowiec,
Emile D. L. Rienks,
Pascal Lejay,
Franck Fortuna,
M. Brian Maple,
Andrés F. Santander-Syro
Abstract:
In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many-electron wave-function in superconductors. Phase transitions with unknown order parameter are rare but extremely appealing, as they may lead to novel physics. An emblematic, and still unsolved, example is the transition…
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In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many-electron wave-function in superconductors. Phase transitions with unknown order parameter are rare but extremely appealing, as they may lead to novel physics. An emblematic, and still unsolved, example is the transition of the heavy fermion compound URu$_2$Si$_2$ (URS) into the so-called hidden-order (HO) phase when the temperature drops below $T_0 = 17.5$K. Here we show that the interaction between the heavy fermion and the conduction band states near the Fermi level has a key role in the emergence of the HO phase. Using angle resolved photoemission spectroscopy, we find that while the Fermi surfaces of the HO and of a neighboring antiferromagnetic (AFM) phase of well-defined order parameter have the same topography, they differ in the size of some, but not all, of their electron pockets. Such a non-rigid change of the electronic structure indicates that a change in the interaction strength between states near the Fermi level is a crucial ingredient for the HO-to-AFM phase transition.
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Submitted 8 July, 2021;
originally announced July 2021.
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Isoelectronic perturbations to $f$-$d$-electron hybridization and the enhancement of hidden order in URu$_2$Si$_2$
Authors:
C. T. Wolowiec,
N. Kanchanavatee,
K. Huang,
S. Ran,
A. J. Breindel,
N. Pouse,
Kalyan Sasmal,
R. E. Baumbach,
G. Chappell,
Peter S. Riseborough,
M. B. Maple
Abstract:
Electrical resistivity measurements were performed on single crystals of URu$_2-x$Os$_x$Si$_2$ up to $x$ = 0.28 under hydrostatic pressure up to $P$ = 2 GPa. As the Os concentration, $x$ , is increased, (1) the lattice expands, creating an effective negative chemical pressure $P_{ch}$($x$), (2) the hidden order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic…
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Electrical resistivity measurements were performed on single crystals of URu$_2-x$Os$_x$Si$_2$ up to $x$ = 0.28 under hydrostatic pressure up to $P$ = 2 GPa. As the Os concentration, $x$ , is increased, (1) the lattice expands, creating an effective negative chemical pressure $P_{ch}$($x$), (2) the hidden order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase, and (3) less external pressure $P_{c}$ is required to induce the HO to LMAFM phase transition. We compare the $T(x)$, $T(P)$ phase behavior reported here for the URu$_2-x$Os$_x$Si$_2$ system with previous reports of enhanced HO in URu$_2$Si$_2$ upon tuning with $P$, or similarly in URu$_2-x$Fe$_x$Si$_2$ upon tuning with positive $P_{ch}$($x$). It is noted that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first order transition to the LMAFM phase in URu$_2$Si$_2$. We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5$f$- and transition metal $d$-electron states which leads to electronic instability in the paramagnetic phase and a concurrent stability of HO (and LMAFM) in URu$_2$Si$_2$. Calculations in the tight binding approximation are included to determine the strength of hybridization between the U-5$f$ electrons and each of the isoelectronic transition metal $d$-electron states of Fe, Ru, and Os.
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Submitted 24 September, 2020;
originally announced September 2020.
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Upper critical magnetic field of $Ln$O$_{0.5}$F$_{0.5}$BiS$_2$ ($Ln$ = La, Nd) superconductors at ambient and high pressure
Authors:
Y. Fang,
C. T. Wolowiec,
A. J. Breindel,
D. Yazici,
P. -C. Ho,
M. B. Maple
Abstract:
The upper critical field $H_{c2}$ of polycrystalline samples of $Ln$O$_{0.5}$F$_{0.5}$BiS$_{2}$ ($Ln$ = La, Nd) at ambient pressure (tetragonal structure) and high pressure (HP) (monoclinic structure) have been investigated via electrical resistivity measurements at various magnetic fields up to 8.5 T. The $H_{c2}$($T$) curves for all the samples show an uncharacteristic concave upward curvature a…
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The upper critical field $H_{c2}$ of polycrystalline samples of $Ln$O$_{0.5}$F$_{0.5}$BiS$_{2}$ ($Ln$ = La, Nd) at ambient pressure (tetragonal structure) and high pressure (HP) (monoclinic structure) have been investigated via electrical resistivity measurements at various magnetic fields up to 8.5 T. The $H_{c2}$($T$) curves for all the samples show an uncharacteristic concave upward curvature at temperatures below $T_c$, which cannot be described by the conventional one-band Werthamer-Helfand-Hohenberg theory. For the LaO$_{0.5}$F$_{0.5}$BiS$_{2}$ sample under HP, as temperature is decreased, the upper critical field $H_{onset}$, estimated from the onset of the superconducting transitions, increases slowly between 4.9 and 5.8 T compared with the slope of $H_{onset}$($T$) below 4.9 T and above 5.8 T. This anomalous behavior reveals a remarkable similarity in superconductivity between LaO$_{0.5}$F$_{0.5}$BiS$_{2}$ samples measured under HP and synthesized under HP, although the crystal structures of the two samples were reported to be different. The experimental results support the idea that local atomic environment, which can be tuned by applying external pressure and can be quenched to ambient pressure via high temperature-pressure annealing, is possibly more essential to the enhancement of $T_c$ for BiS$_2$-based superconductors than the structural phase transition. On the other hand, such anomalous behavior is very subtle in the case of NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ under HP, suggesting that the anisotropy of the upper critical field in the $ab$-plane and the possible lattice deformation induced by external pressure is weak. This explains why the pressure-induced enhancement of $T_c$ for NdO$_{0.5}$F$_{0.5}$BiS$_{2}$ is not as large as that for LaO$_{0.5}$F$_{0.5}$BiS$_{2}$.
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Submitted 11 November, 2016;
originally announced November 2016.
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Effect of atomic disorder and Ce doping on superconductivity of Ca3Rh4Sn13: Electric transport properties under high pressure
Authors:
A. Slebarski,
J. Goraus,
M. M. Maska,
P. Witas,
M. Fijalkowski,
C. T. Wolowiec,
Y. Fang,
M. B. Maple
Abstract:
We report the observation of a superconducting state below 8K coexistent with a spin-glass state caused by atomic disorder in Ce substituted Ca3Rh4Sn13. Measurements of specific heat, resistivity, and magnetism reveal the existence of inhomogeneous superconductivity in samples doped with Ce with superconducting critical temperatures Tc higher than those observed in the parent compound. For Ca3Rh4S…
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We report the observation of a superconducting state below 8K coexistent with a spin-glass state caused by atomic disorder in Ce substituted Ca3Rh4Sn13. Measurements of specific heat, resistivity, and magnetism reveal the existence of inhomogeneous superconductivity in samples doped with Ce with superconducting critical temperatures Tc higher than those observed in the parent compound. For Ca3Rh4Sn13, the negative value of the change in resistivity with pressure P, correlates well with the calculated decrease in the density of states at the Fermi energy with P. Based on band structure calculations performed under pressure, we demonstrate how the change in DOS would affect Tc of Ca3Rh4Sn13 under negative lattice pressure in samples that are strongly defected by quenching.
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Submitted 14 June, 2016;
originally announced June 2016.
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Phase diagram and thermal expansion measurements on the system of URu_{2-x}Fe_xSi_2
Authors:
S. Ran,
C. T. Wolowiec,
I. Jeon,
N. Pouse,
N. Kanchanavatee,
K. Huang,
D. Martien,
T. DaPron,
D. Snow,
M. Williamsen,
S. Spagna,
M. B. Maple
Abstract:
Thermal expansion, electrical resistivity, magnetization, and specific heat measurements were performed on URu$_{2-x}$Fe$_{x}$Si$_{2}$ single crystals for various values of the Fe concentration $x$ in both the hidden order (HO) and large moment antiferromagnetic (LMAFM) regions of the phase diagram. Our results show that the paramagnetic (PM) to HO and LMAFM phase transitions are manifested differ…
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Thermal expansion, electrical resistivity, magnetization, and specific heat measurements were performed on URu$_{2-x}$Fe$_{x}$Si$_{2}$ single crystals for various values of the Fe concentration $x$ in both the hidden order (HO) and large moment antiferromagnetic (LMAFM) regions of the phase diagram. Our results show that the paramagnetic (PM) to HO and LMAFM phase transitions are manifested differently in the thermal expansion coefficient. For Fe concentrations near the boundary between the HO and LMAFM phases at $x_c$ ~ 0.1, we observe two features in the thermal expansion upon cooling, one that appears to be associated with the transition from the PM to the HO phase and another one at lower temperature that may be due to the transition from the HO to the LMAFM phase. These two features have not been observed in other measurements such as specific heat or neutron scattering. In addition, the uniaxial pressure derivative of the transition temperature, based on a calculation using thermal expansion and specific heat data, changes dramatically when crossing from the HO to the LMAFM phase.
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Submitted 4 April, 2016;
originally announced April 2016.
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Chemical Substitution and High Pressure Effects on Superconductors in the $Ln$OBiS$_{2}$ ($Ln$ = La-Nd) System
Authors:
Y. Fang,
C. T. Wolowiec,
D. Yazici,
M. B. Maple
Abstract:
A large number of compounds which contain BiS$_{2}$ layers exhibit enhanced superconductivity upon electron doping. Much interest and research effort has been focused on BiS$_{2}$-based compounds which provide new opportunities for exploring the nature of superconductivity. Important to the study of BiS$_{2}$-based superconductors is the relation between structure and superconductivity. By modifyi…
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A large number of compounds which contain BiS$_{2}$ layers exhibit enhanced superconductivity upon electron doping. Much interest and research effort has been focused on BiS$_{2}$-based compounds which provide new opportunities for exploring the nature of superconductivity. Important to the study of BiS$_{2}$-based superconductors is the relation between structure and superconductivity. By modifying either the superconducting BiS$_2$ layers or the blocking layers in these layered compounds, one can effectively tune the lattice parameters, local atomic environment, electronic structure, and other physical properties of these materials. In this article, we will review some of the recent progress on research of the effects of chemical substitution in BiS$_{2}$-based compounds, with special attention given to the compounds in the $Ln$OBiS$_{2}$ ($Ln$ = La-Nd) system. Strategies which are reported to be essential in optimizing superconductivity of these materials will also be discussed.
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Submitted 26 January, 2016;
originally announced January 2016.
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Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in BiS2-based compounds LnO(0.5)F(0.5)BiS2 (Ln = La, Ce, Pr, Nd)
Authors:
C. T. Wolowiec,
B. D. White,
I. Jeon,
D. Yazici,
K. Huang,
M. B. Maple
Abstract:
Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a…
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Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ~0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of NdO0.5F0.5BiS2, Pt is coincident with a semiconductor-metal transition. This behaviour is similar to the results recently reported for the LnO0.5F0.5BiS2 (Ln = La, Ce) compounds. We observe that Pt and the size of the jump in Tc between the two superconducting phases both scale with the lanthanide element in LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd).
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Submitted 22 September, 2013; v1 submitted 5 August, 2013;
originally announced August 2013.
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Pressure-induced enhancement of superconductivity and suppression of semiconducting behavior in Ln(O0.5F0.5)BiS2 (Ln = La, Ce) compounds
Authors:
C. T. Wolowiec,
D. Yazici,
B. D. White,
K. Huang,
M. B. Maple
Abstract:
Electrical resistivity measurements as a function of temperature between 1 K and 300 K were performed at various pressures up to 3 GPa on the superconducting layered compounds Ln(O0.5F0.5)BiS2 (Ln = La, Ce). At atmospheric pressure, La(O0.5F0.5)BiS2 and Ce(O0.5F0.5)BiS2 have superconducting critical temperatures, Tc, of 3.3 K and 2.3 K, respectively. For both compounds, the superconducting critica…
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Electrical resistivity measurements as a function of temperature between 1 K and 300 K were performed at various pressures up to 3 GPa on the superconducting layered compounds Ln(O0.5F0.5)BiS2 (Ln = La, Ce). At atmospheric pressure, La(O0.5F0.5)BiS2 and Ce(O0.5F0.5)BiS2 have superconducting critical temperatures, Tc, of 3.3 K and 2.3 K, respectively. For both compounds, the superconducting critical temperature Tc initially increases, reaches a maximum value of 10.1 K for La(O0.5F0.5)BiS2 and 6.7 K for CeO(0.5F0.5)BiS2, and then gradually decreases with increasing pressure. Both samples also exhibit transient behavior in the region between the lower Tc phase near atmospheric pressure and the higher Tc phase. This region is characterized by a broadening of the superconducting transition, in which Tc and the transition width, delta Tc, are reversible with increasing and decreasing pressure. There is also an appreciable pressure-induced and hysteretic suppression of semiconducting behavior up to the pressure at which the maximum value of Tc is found. At pressures above the value at which the maximum in Tc occurs, there is a gradual decrease of Tc and further suppression of the semiconducting behavior with pressure, both of which are reversible.
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Submitted 8 August, 2013; v1 submitted 16 July, 2013;
originally announced July 2013.
