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Quantum Imaging of Ferromagnetic van der Waals Magnetic Domain Structures at Ambient Conditions
Authors:
Bindu,
Amandeep Singh,
Amir Hen,
Lukas Drago Cavar,
Sebastian Maria Ulrich Schultheis,
Shira Yochelis,
Yossi Paltiel,
Andrew F. May,
Angela Wittmann,
Mathias Klaui,
Dmitry Budker,
Hadar Steinberg,
Nir Bar-Gill
Abstract:
Recently discovered 2D van der Waals magnetic materials, and specifically Iron-Germanium-Telluride ($\rm Fe_{5}GeTe_{2}$), have attracted significant attention both from a fundamental perspective and for potential applications. Key open questions concern their domain structure and magnetic phase transition temperature as a function of sample thickness and external field, as well as implications fo…
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Recently discovered 2D van der Waals magnetic materials, and specifically Iron-Germanium-Telluride ($\rm Fe_{5}GeTe_{2}$), have attracted significant attention both from a fundamental perspective and for potential applications. Key open questions concern their domain structure and magnetic phase transition temperature as a function of sample thickness and external field, as well as implications for integration into devices such as magnetic memories and logic. Here we address key questions using a nitrogen-vacancy center based quantum magnetic microscope, enabling direct imaging of the magnetization of $\rm Fe_{5}GeTe_{2}$ at sub-micron spatial resolution as a function of temperature, magnetic field, and thickness. We employ spatially resolved measures, including magnetization variance and cross-correlation, and find a significant spread in transition temperature yet with no clear dependence on thickness down to 15 nm. We also identify previously unknown stripe features in the optical as well as magnetic images, which we attribute to modulations of the constituting elements during crystal synthesis and subsequent oxidation. Our results suggest that the magnetic anisotropy in this material does not play a crucial role in their magnetic properties, leading to a magnetic phase transition of $\rm Fe_{5}GeTe_{2}$ which is largely thickness-independent down to 15 nm. Our findings could be significant in designing future spintronic devices, magnetic memories and logic with 2D van der Waals magnetic materials.
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Submitted 27 July, 2025;
originally announced July 2025.
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Chiral-induced unidirectional spin-to-charge conversion
Authors:
Ashish Moharana,
Yael Kapon,
Fabian Kammerbauer,
David Anthofer,
Shira Yochelis,
Mathias Kläui,
Yossi Paltiel,
Angela Wittmann
Abstract:
The observation of spin-dependent transmission of electrons through chiral molecules has led to the discovery of chiral-induced spin selectivity (CISS). The remarkably high efficiency of the spin polarizing effect has recently gained significant interest due to the high potential for novel sustainable hybrid chiral molecule magnetic applications. However, the fundamental mechanisms underlying the…
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The observation of spin-dependent transmission of electrons through chiral molecules has led to the discovery of chiral-induced spin selectivity (CISS). The remarkably high efficiency of the spin polarizing effect has recently gained significant interest due to the high potential for novel sustainable hybrid chiral molecule magnetic applications. However, the fundamental mechanisms underlying the chiral-induced phenomena remain to be understood fully. In this work, we explore the impact of chirality on spin angular momentum in hybrid metal/ chiral molecule thin film heterostructures. For this, we inject a pure spin current via spin pumping and investigate the spin-to-charge conversion at the hybrid chiral interface. Notably, we observe a chiral-induced unidirectionality in the conversion. Furthermore, angle-dependent measurements reveal that the spin selectivity is maximum when the spin angular momentum is aligned with the molecular chiral axis. Our findings validate the central role of spin angular momentum for the CISS effect, paving the path toward three-dimensional functionalization of hybrid molecule-metal devices via chirality.
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Submitted 29 February, 2024;
originally announced February 2024.
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Antiferromagnetic insulatronics: spintronics in insulating 3d metal oxides with antiferromagnetic coupling
Authors:
H. Meer,
O. Gomonay,
A. Wittmann,
M. Kläui
Abstract:
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest has resurged due to the recent observation of long-distance spin transport, current-induced switching, and THz emission. As a result, insulating transition metal…
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Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest has resurged due to the recent observation of long-distance spin transport, current-induced switching, and THz emission. As a result, insulating transition metal oxides are now considered to be attractive candidates for active elements in novel spintronic devices. Here, we discuss some of the most promising materials systems and highlight recent advances in reading and writing antiferromagnetic ordering. This article aims to provide an overview of the current research and potential future directions in the field of antiferromagnetic insulatronics.
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Submitted 23 March, 2023;
originally announced March 2023.
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Role of substrate clamping on anisotropy and domain structure in the canted antiferromagnet $α$-Fe$_2$O$_3$
Authors:
Angela Wittmann,
Olena Gomonay,
Kai Litzius,
Allison Kaczmarek,
Alexander E. Kossak,
Daniel Wolf,
Axel Lubk,
Tyler N. Johnson,
Elizaveta A. Tremsina,
Alexandra Churikova,
Felix Büttner,
Sebastian Wintz,
Mohamad-Assaad Mawass,
Markus Weigand,
Florian Kronast,
Larry Scipioni,
Adam Shepard,
Ty Newhouse-Illig,
James A Greer,
Gisela Schütz,
Norman O. Birge,
Geoffrey S. D. Beach
Abstract:
Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving…
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Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $α$-Fe$_2$O$_3$, but fluctuate due to substrate clamping. This leads to an overall isotropic distribution of the Néel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $α$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films.
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Submitted 28 October, 2022;
originally announced October 2022.
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Fast scanning nitrogen-vacancy magnetometry by spectrum demodulation
Authors:
P. Welter,
B. A. Josteinsson,
S. Josephy,
A. Wittmann,
A. Morales,
G. Puebla-Hellmann,
C. L. Degen
Abstract:
We demonstrate a spectrum demodulation technique for greatly speeding up the data acquisition rate in scanning nitrogen-vacancy center magnetometry. Our method relies on a periodic excitation of the electron spin resonance by fast, wide-band frequency sweeps combined with a phase-locked detection of the photo-luminescence signal. The method can be extended by a frequency feedback to realize real-t…
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We demonstrate a spectrum demodulation technique for greatly speeding up the data acquisition rate in scanning nitrogen-vacancy center magnetometry. Our method relies on a periodic excitation of the electron spin resonance by fast, wide-band frequency sweeps combined with a phase-locked detection of the photo-luminescence signal. The method can be extended by a frequency feedback to realize real-time tracking of the spin resonance. Fast scanning magnetometry is especially useful for samples where the signal dynamic range is large, of order millitesla, like for ferro- or ferrimagnets. We demonstrate our method by mapping stray fields above the model antiferromagnet $α$-Fe$_2$O$_3$ (hematite) at pixel rates of up to 100\,Hz and an image resolution exceeding one megapixel.
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Submitted 13 May, 2022;
originally announced May 2022.
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Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact
Authors:
Fabrizio Nichele,
Stefano Chesi,
Szymon Hennel,
Angela Wittmann,
Christian Gerl,
Werner Wegscheider,
Daniel Loss,
Thomas Ihn,
Klaus Ensslin
Abstract:
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g-factors. Here we find additional effects, namely the crossing and the anti-crossing of spin-split level…
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We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g-factors. Here we find additional effects, namely the crossing and the anti-crossing of spin-split levels depending on subband index and magnetic field direction. Our experimental observations are reconciled in an heavy hole effective spin-orbit Hamiltonian where cubic- and quadratic-in-momentum terms appear. The spin-orbit components, being of great importance for quantum computing applications, are characterized in terms of magnitude and spin structure. In the light of our results, we explain the level dependent effective g-factor in an in-plane field. Through a tilted magnetic field analysis, we show that the QPC out-of-plane g-factor saturates around the predicted 7.2 bulk value.
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Submitted 31 July, 2014; v1 submitted 12 May, 2014;
originally announced May 2014.
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Sequential resonant tunneling in quantum cascade lasers
Authors:
Romain Terazzi,
Tobias Gresch,
Andreas Wittmann,
Jérôme Faist
Abstract:
A model of sequential resonant tunneling transport between two-dimensional subbands that takes into account explicitly elastic scattering is investigated. It is compared to transport measurements performed on quantum cascade lasers where resonant tunneling processes are known to be dominating. Excellent agreement is found between experiment and theory over a large range of current, temperature a…
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A model of sequential resonant tunneling transport between two-dimensional subbands that takes into account explicitly elastic scattering is investigated. It is compared to transport measurements performed on quantum cascade lasers where resonant tunneling processes are known to be dominating. Excellent agreement is found between experiment and theory over a large range of current, temperature and device structures.
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Submitted 1 October, 2008;
originally announced October 2008.
