Showing 1–6 of 6 results for author: Witkoske, E

The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)

Authors: Evan Witkoske, Zhen Tong, Yining Feng, Xiulin Ruan, Mark Lundstrom, Na Lu

Abstract: Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and therma… ▽ More Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and thermal properties to achieve high zT values and low cost/kW-hr devices. In this work, the strain-dependent lattice thermal conductivity of 2H $CuAlO_{2}$ is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. While the average bulk thermal conductivity is around 32 W/(K-m) at room temperature, it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nm to 30nm at room temperature. We find that strain can offer both an increase as well as a decrease in the thermal conductivity as expected, however the overall inclusion of small grain sizes dictates the potential for low thermal conductivity in this material. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Homogenous $In_{x}Ga_{1-x}N$ alloys on ZnO substrates: A new approach for high performance thermoelectric materials

Authors: Yining Feng, Evan Witkoske, Bahadir Kucukgok, Yee Rui Koh, Ali Shakouri, Ian T. Ferguson, Na Lu

Abstract: High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of… ▽ More High performance thermoelectric materials for wide-range temperature applications still remains a challenge. In this study, we have produced high-quality homogeneous $In_{0.32}Ga_{0.68}N$ on ZnO substrates, with no phase separation at high Indium content, using metal organic chemical vapor deposition for thermoelectric applications. A record high room temperature figure of merit zT is obtained of 0.86, which is five times larger than that of SiGe, the current state of the art high temperature thermoelectric material. These materials are shown to have a nearly perfect doping concentration to maximize zT regardless of the scattering mechanism. This almost one order of magnitude increase in zT is due to large electrical conductivities from oxygen co-doping as well as low thermal conductivities from alloy scattering. The maximum power factor reached was $77.98x10^{-4} W/mK^{2}$ at 300K for $In_{0.32}Ga_{0.68}N$ alloys at a carrier concentration $~6.25x10^{20} cm^{-3}$. This work indicates that $In_{x}Ga_{1-x}N$ alloys have great potential for thermoelectric applications especially at a high temperature range. △ Less

Submitted 24 July, 2019; v1 submitted 9 May, 2019; originally announced May 2019.

The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2

Authors: Evan Witkoske, David Guzman, Yining Feng, Alejandro Strachan, Mark Lundstrom, Na Lu

Abstract: Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test case. Transparent oxide materials, such as CuAlO2, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. Given TCO materi… ▽ More Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test case. Transparent oxide materials, such as CuAlO2, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. Given TCO materials with relative ease of fabrication, low cost of materials, and non-toxicity, the ability to tailor them to specific temperature ranges, power needs, and size requirements, through the use of strain opens an interesting avenue. We find that strain can have a significant effect on these properties, in some cases detrimental and in others beneficial, including the potential for n-type power factors larger than the highest p-type case. The physical reasons for this behavior are explained in the terms of the thermoelectric transport distribution and the Landauer distribution of modes. △ Less

Submitted 12 December, 2018; originally announced December 2018.

LanTraP: A code for calculating thermoelectric transport properties with the Landauer formalism

Authors: Xufeng Wang, Evan Witkoske, Jesse Maassen, Mark Lundstrom

Abstract: A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band struct… ▽ More A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band structures. Good agreements are found when comparing the results obtained using band-counting and established Fourier-based interpolation methods. △ Less

Submitted 5 January, 2020; v1 submitted 22 June, 2018; originally announced June 2018.

Universal Behavior of the Thermoelectric Figure of Merit, zT, vs. Quality Factor

Authors: Evan Witkoske, Xufeng Wang, Jesse Maassen, Mark Lundstrom

Abstract: To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice… ▽ More To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice thermal conductivity, we compute the thermoelectric figure of merit, zT, vs. a generalized thermoelectric quality factor. More than a dozen different complex electronic structures are examined. Surprisingly, we find that at a given quality factor, none provides a better figure of merit than that of a material with a simple, parabolic band and acoustic deformation potential scattering. A qualitative argument for this unexpected finding is presented. This apparent universal behavior suggests that even for complex electronic band structures, the thermoelectric figure of merit depends solely on the ratio of electrical to thermal conductivity; the Seebeck coefficient and Lorenz number need not be considered. This observation should simplify the search for promising new materials, but if exceptions to this behavior can be identified, new paths for increasing thermoelectric material performance will open up. △ Less

Submitted 13 December, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: Version 5: The discussion section and conclusion were rewritten and supplementary material was added

Thermoelectric Band Engineering: The Role of Carrier Scattering

Authors: Evan Witkoske, Xufeng Wang, Vahid Askarpour, Mark Lundstrom, Jesse Maassen

Abstract: Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the… ▽ More Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented. △ Less

Submitted 4 October, 2017; v1 submitted 16 June, 2017; originally announced June 2017.