-
Erbium implanted silicon for solid-state quantum technologies
Authors:
Mark A. Hughes,
Naitik A. Panjwani,
Matias Urdampilleta,
Nafsika Theodoropoulou,
Ilana Wisby,
Kevin P. Homewood,
Ben Murdin,
Tobias Lindström,
J. David Carey
Abstract:
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measur…
▽ More
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz.
△ Less
Submitted 27 August, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
-
Angular dependent micro-ESR characterization of a locally doped Gd3+:Al2O3 system
Authors:
I. S. Wisby,
S. E. de Graaf,
R. Gwilliam,
A. Adamyan,
S. E. Kubatkin,
P. J. Meeson,
A. Ya. Tzalenchuk,
T. Lindström
Abstract:
Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator.
We investigate the properties of the implanted spin syste…
▽ More
Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator.
We investigate the properties of the implanted spin system through angular dependent micro-resonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation.
△ Less
Submitted 7 December, 2015;
originally announced December 2015.
-
Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator
Authors:
I. Wisby,
S. E. de Graaf,
R. Gwilliam,
A. Adamyan,
S. Kubatkin,
P. J. Meeson,
A. Ya. Tzalenchuk,
T. Lindström
Abstract:
We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor…
▽ More
We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz.
△ Less
Submitted 10 September, 2014; v1 submitted 18 July, 2014;
originally announced July 2014.
-
Evidence for interacting two-level systems from the 1/f noise of a superconducting resonator
Authors:
J. Burnett,
L. Faoro,
I. Wisby,
V. L. Gurtovoi,
A. V. Chernykh,
G. M. Mikhailov,
V. A. Tulin,
R. Shaikhaidarov,
V. Antonov,
P. J. Meeson,
A. Ya. Tzalenchuk,
T. Lindstrom
Abstract:
Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise for over three decades. We revise the STM to include a significant TLS - TLS interaction. The new model is able to explain the temperature and power dependence o…
▽ More
Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise for over three decades. We revise the STM to include a significant TLS - TLS interaction. The new model is able to explain the temperature and power dependence of noise in our measurements, as well as recent studies of individual TLS lifetimes using superconducting qubits. The measurements were made possible by implementing an ultra-stable frequency-tracking technique used in atomic clocks and by producing a superconducting resonator insensitive to temperature fluctuations. The latter required an epitaxially grown Nb film with a Pt capping layer to minimize detrimental oxides at all interfaces.
△ Less
Submitted 7 November, 2013;
originally announced November 2013.
