Showing 1–2 of 2 results for author: Winkler, T E

Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP

Authors: T. E. Winkler, P. R. Stone, Tian Li, K. M. Yu, A. Bonanni, O. D. Dubon

Abstract: We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflec… ▽ More We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation. △ Less

Submitted 14 December, 2010; v1 submitted 7 October, 2010; originally announced October 2010.

Comments: 3 pages, 3 figures; accepted for publication in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 98, 012103 (2011)

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

Authors: A. Bonanni, M. Sawicki, T. Devillers, W. Stefanowicz, B. Faina, Tian Li, T. E. Winkler, D. Sztenkiel, A. Navarro-Quezada, M. Rovezzi, R. Jakiela, A. Grois, M. Wegscheider, W. Jantsch, J. Suffczynski, F. D'Acapito, A. Meingast, G. Kothleitner, T. Dietl

Abstract: The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and ele… ▽ More The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+. △ Less

Submitted 20 June, 2011; v1 submitted 12 August, 2010; originally announced August 2010.

Comments: 12 pages, 14 figures; This version contains the detailed characterization of the crystal structure as well as of the Mn distribution and charge state

Journal ref: Phys. Rev. B 84, 035206 (2011)