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Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature
Authors:
Matthew P. Hautzinger,
Xin Pan,
Steven C. Hayden,
Jiselle Y. Ye,
Qi Jiang,
Mickey J. Wilson,
Yifan Dong,
Emily K. Raulerson,
Ian A. Leahy,
Chun-Sheng Jiang,
Joseph M. Luther,
Yuan Lu,
Katherine Jungjohann,
Z. Valy Vardeny,
Joseph J. Berry,
Kirstin Alberi,
Matthew C. Beard
Abstract:
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a…
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Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. The chiral perovskite/III-V interface was characterized with X-ray photoemission spectroscopy (XPS), cross sectional scanning Kelvin probe force microscopy, and cross section transmission electron microscopy (TEM) imaging, showing a clean semiconductor/semiconductor interface where the fermi-level can equilibrate. These findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin.
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Submitted 14 November, 2023; v1 submitted 8 September, 2023;
originally announced September 2023.
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Photoelectric absorption cross section of silicon near the band gap from room temperature to sub-Kelvin temperature
Authors:
C. Stanford,
M. J. Wilson,
B. Cabrera,
M. Diamond,
N. A. Kurinsky,
R. A. Moffatt,
F. Ponce,
B. von Krosigk,
B. A. Young
Abstract:
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking…
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The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap.
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Submitted 29 October, 2020;
originally announced October 2020.
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Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin Film
Authors:
A. L. Balk,
M. E. Nowakowski,
M. J. Wilson,
D. W. Rench,
P. Schiffer,
D. D. Awschalom,
N. Samarth
Abstract:
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}…
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We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}. Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Finally, our data hints at a much higher intrinsic domain wall mobility for flexing than previously observed in optically-probed micron scale measurements.
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Submitted 27 March, 2011;
originally announced March 2011.
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Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures
Authors:
M. J. Wilson,
M. Zhu,
R. C. Myers,
D. D. Awschalom,
P. Schiffer,
N. Samarth
Abstract:
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated…
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We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.
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Submitted 28 October, 2009; v1 submitted 22 May, 2009;
originally announced May 2009.
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Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions
Authors:
M. Zhu,
M. J. Wilson,
P. Mitra,
P. Schiffer,
N. Samarth
Abstract:
We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased \gma layer. The distinctive tu…
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We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased \gma layer. The distinctive tunneling anisotropic magnetoresistance of \gma produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.
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Submitted 17 July, 2008;
originally announced July 2008.
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Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
Authors:
M. Zhu,
M. J. Wilson,
B. L. Sheu,
P. Mitra,
P. Schiffer,
N. Samarth
Abstract:
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance mea…
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We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
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Submitted 15 August, 2007;
originally announced August 2007.
