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Waveguide Excitation and Spin Pumping of Chirally Coupled Quantum Dots
Authors:
Savvas Germanis,
Xuchao Chen,
René Dost,
Dominic J. Hallett,
Edmund Clarke,
Pallavi K. Patil,
Maurice S. Skolnick,
Luke R. Wilson,
Hamidreza Siampour,
A. Mark Fox
Abstract:
We report on an integrated semiconductor chip where a single quantum dot (QD) is excited in-plane via a photonic-crystal waveguide through its nearest p-shell optical transition. The chirality of the waveguide mode is exploited to achieve both directional absorption and directional emission, resulting in a substantial enhancement in directional contrast, as measured for the Zeeman components of th…
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We report on an integrated semiconductor chip where a single quantum dot (QD) is excited in-plane via a photonic-crystal waveguide through its nearest p-shell optical transition. The chirality of the waveguide mode is exploited to achieve both directional absorption and directional emission, resulting in a substantial enhancement in directional contrast, as measured for the Zeeman components of the waveguide-coupled QD. This remote excitation scheme enables high directionality (greater than or equal to 0.95) across approximately 56% of the waveguide area, with significant overlap with the Purcell-enhanced region, where the electric field intensity profile is near its peak. In contrast, local excitation methods using an out-of-plane excitation beam focused directly over the area of the QD achieve only approximately 25% overlap. This enhancement increases the likelihood of locating Purcell-enhanced QDs in regions that support high directionality, enabling the experimental demonstration of a six-fold enhancement in the decay rate of a QD with greater than 90% directionality. The remote p-shell excitation protocol establishes a new benchmark for waveguide quantum optics in terms of the combination of Purcell enhancement and high directionality, thereby paving the way for on-chip excitation of spin-based solid-state quantum technologies in regimes of high beta-factor.
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Submitted 31 January, 2025;
originally announced February 2025.
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Non-Reciprocal Transmission and Reflection of a Chirally-Coupled Quantum Dot
Authors:
D. L. Hurst,
D. M. Price,
C. Bentham,
M. N. Makhonin,
B. Royall,
E. Clarke,
P. Kok,
L. R. Wilson,
M. S. Skolnick,
A. M. Fox
Abstract:
We report strongly non-reciprocal behaviour for quantum dot exciton spins coupled to nano-photonic waveguides under resonant laser excitation. A clear dependence of the transmission spectrum on the propagation direction is found for a chirally-coupled quantum dot, with spin up and spin down exciton spins coupling to the left and right propagation directions respectively. The reflection signal show…
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We report strongly non-reciprocal behaviour for quantum dot exciton spins coupled to nano-photonic waveguides under resonant laser excitation. A clear dependence of the transmission spectrum on the propagation direction is found for a chirally-coupled quantum dot, with spin up and spin down exciton spins coupling to the left and right propagation directions respectively. The reflection signal shows an opposite trend to the transmission, which a numerical model indicates is due to direction-selective saturation of the quantum dot. The chiral spin-photon interface we demonstrate breaks reciprocity of the system and opens the way to spin-based quantum optical components such as optical diodes and circulators in a chip-based solid-state environment.
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Submitted 7 August, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Electrical control of nonlinear quantum optics in a nano-photonic waveguide
Authors:
D. Hallett,
A. P. Foster,
D. L. Hurst,
B. Royall,
P. Kok,
E. Clarke,
I. E. Itskevich,
A. M. Fox,
M. S. Skolnick,
L. R. Wilson
Abstract:
Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single photon sources and as nonlinear elements to mediate photon-photon interactions, offer a scalable route to such networks. However, local electrical control of a qua…
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Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single photon sources and as nonlinear elements to mediate photon-photon interactions, offer a scalable route to such networks. However, local electrical control of a quantum optical nonlinearity has yet to be demonstrated in a waveguide geometry. Here, we demonstrate local electrical tuning and switching of single photon generation and nonlinear interaction by embedding a quantum dot in a nano-photonic waveguide with enhanced light-matter interaction. A power-dependent transmission extinction as large as 40$\pm$2% and clear, voltage-controlled bunching in the photon statistics of the transmitted light demonstrate the single photon character of the nonlinearity. The deterministic nature of the nonlinearity is particularly attractive for the future realization of photonic gates for scalable nano-photonic waveguide-based quantum information processing.
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Submitted 28 November, 2017; v1 submitted 2 November, 2017;
originally announced November 2017.
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Electro-mechanical control of an on-chip optical beam splitter containing an embedded quantum emitter
Authors:
Z. K. Bishop,
A. P. Foster,
B. Royall,
C. Bentham,
E. Clarke,
M. S. Skolnick,
L. R. Wilson
Abstract:
We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitte…
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We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.
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Submitted 2 May, 2018; v1 submitted 18 September, 2017;
originally announced September 2017.
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Electrically pumped single-defect light emitters in WSe$_2$
Authors:
S. Schwarz,
A. Kozikov,
F. Withers,
J. K. Maguire,
A. P. Foster,
S. Dufferwiel,
L. Hague,
M. N. Makhonin,
L. R. Wilson,
A . K. Geim,
K. S. Novoselov,
A. I. Tartakovskii
Abstract:
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects…
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Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.
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Submitted 6 May, 2016;
originally announced May 2016.
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On-chip interference of single photons from an embedded quantum dot and an external laser
Authors:
Nikola Prtljaga,
Christopher Bentham,
John O'Hara,
Ben Royall,
Edmund Clarke,
Luke R Wilson,
Maurice S Skolnick,
A Mark Fox
Abstract:
In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter an…
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In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler. This experimental approach allows us to use classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.
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Submitted 9 June, 2016; v1 submitted 26 February, 2016;
originally announced February 2016.
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Strong exciton-photon coupling in open semiconductor microcavities
Authors:
S. Dufferwiel,
F. Fras,
A. Trichet,
P. M. Walker,
F. Li,
L. Giriunas,
M. N. Makhonin,
L. R. Wilson,
J. M. Smith,
E. Clarke,
M. S. Skolnick,
D. N. Krizhanovskii
Abstract:
We present a method to implement 3-dimensional polariton confinement with in-situ spectral tuning of the cavity mode. Our tunable microcavity is a hybrid system consisting of a bottom semiconductor distributed Bragg reflector (DBR) with a cavity containing quantum wells (QWs) grown on top and a dielectric concave DBR separated by a micrometer sized gap. Nanopositioners allow independent positionin…
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We present a method to implement 3-dimensional polariton confinement with in-situ spectral tuning of the cavity mode. Our tunable microcavity is a hybrid system consisting of a bottom semiconductor distributed Bragg reflector (DBR) with a cavity containing quantum wells (QWs) grown on top and a dielectric concave DBR separated by a micrometer sized gap. Nanopositioners allow independent positioning of the two mirrors and the cavity mode energy can be tuned by controlling the distance between them. When close to resonance we observe a characteristic anticrossing between the cavity modes and the QW exciton demonstrating strong coupling. For the smallest radii of curvature concave mirrors of 5.6 $μ$m and 7.5 $μ$m real-space polariton imaging reveals submicron polariton confinement due to the hemispherical cavity geometry.
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Submitted 19 March, 2014;
originally announced March 2014.
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Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon
Authors:
O. D. D. Couto Jr,
D. Sercombe,
J. Puebla,
L. Otubo,
I. J. Luxmoore,
M. Sich,
T. J. Elliott,
E. A. Chekhovich,
L. R. Wilson,
M. S. Skolnick,
H. Y. Liu,
A. I. Tartakovskii
Abstract:
We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison…
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We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.
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Submitted 23 June, 2012; v1 submitted 21 June, 2012;
originally announced June 2012.
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Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots
Authors:
E. A. Zibik,
T. Grange,
B. A. Carpenter,
R. Ferreira,
G. Bastard,
N. Q. Vinh,
P. J. Phillips,
M. J. Steer,
M. Hopkinson,
J. W. Cockburn,
M. S. Skolnick,
L. R. Wilson
Abstract:
Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of…
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Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay.
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Submitted 26 October, 2007;
originally announced October 2007.
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Fingerprints of spatial charge transfer in Quantum Cascade Lasers
Authors:
R. Nelander,
A. Wacker,
M. F. Pereira Jr.,
D. G. Revin,
M. R. Soulby,
L. R. Wilson,
J. W. Cockburn,
A. B. Krysa,
J. S. Roberts,
R. J. Airey
Abstract:
We show that mid infrared transmission spectroscopy of a quantum cascade laser provides clear cut information on changes in charge location at different bias. Theoretical simulations of the evolution of the gain/absorption spectrum for the $λ\sim$ 7.4 $μ$m InGaAs/AlInAs/InP quantum cascade laser have been compared with the experimental findings. Transfer of electrons between the ground states in…
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We show that mid infrared transmission spectroscopy of a quantum cascade laser provides clear cut information on changes in charge location at different bias. Theoretical simulations of the evolution of the gain/absorption spectrum for the $λ\sim$ 7.4 $μ$m InGaAs/AlInAs/InP quantum cascade laser have been compared with the experimental findings. Transfer of electrons between the ground states in the active region and the states in the injector goes in hand with a decrease of discrete intersubband absorption peaks and an increase of broad high-energy absorption towards the continuum delocalised states above the barriers.
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Submitted 9 August, 2007;
originally announced August 2007.
