Showing 1–2 of 2 results for author: Williamson, M
-
Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology
Authors:
Morgan Williamson,
Maxim Tsoi,
Pin-Wei Huang,
Ganping Ju,
Cheng Wang
Abstract:
Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and if combined with magnetoresistive phenomena (for read/write operations) may lead to a novel concep…
▽ More
Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and if combined with magnetoresistive phenomena (for read/write operations) may lead to a novel concept for magnetic recording with high areal density. While the bulk measurements on the films showed only small variations in dc resistance as a function of applied magnetic field (magnetoresistance of less than 0.02 %), the point-contact measurements revealed giant-magnetoresistance-like changes in resistance with up to 50,000 % ratios. The observed magnetorestive effect could be attributed to a tunnel magnetoresistance between CoPtCr grains with different coercivity. The tunneling picture of electronic transport in our granular medium was confirmed by the observation of tunneling-like current-voltage characteristics and bias dependence of magnetoresistance; both the point-contact resistance and magnetoresistance were found to decrease with the applied dc bias.
△ Less
Submitted 22 July, 2019;
originally announced July 2019.
-
Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)
Authors:
Morgan Williamson,
Shida Shen,
Gang Cao,
Jianshi Zhou,
John B. Goodenough,
Maxim Tsoi
Abstract:
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect…
▽ More
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition metal oxides for spintronic applications.
△ Less
Submitted 6 February, 2018;
originally announced February 2018.
