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A silicon spin vacuum: isotopically enriched $^{28}$silicon-on-insulator and $^{28}$silicon from ultra-high fluence ion implantation
Authors:
Shao Qi Lim,
Brett C. Johnson,
Sergey Rubanov,
Nico Klingner,
Bin Gong,
Alexander M. Jakob,
Danielle Holmes,
David N. Jamieson,
Jim S. Williams,
Jeffrey C. McCallum
Abstract:
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce…
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Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce $^{28}$Si and $^{28}$Si-on-insulator (SOI) samples. Experimentally, we produced a $^{28}$Si sample on natural Si substrate with $^{29}$Si depleted to 7~ppm (limited by measurement noise floor), that is at least 100 nm thick. This is achieved with an ion energy that results in a sputter yield of less than one and an ultra-high ion fluence, as supported by our improved computational model that is based on fitting a large number of experiments. Further, our model predicts the $^{29}$Si and $^{30}$Si depletion in our sample to be less than 1~ppm. In the case of SOI, ion implantation conditions are found to be more stringent than those of bulk natural Si in terms of minimizing threading dislocations upon subsequent solid phase epitaxy annealing. Finally, we do not observe open volume defects in our $^{28}$SOI and $^{28}$Si samples after SPE annealing (620°C, 10 minutes).
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Submitted 18 May, 2025; v1 submitted 4 April, 2025;
originally announced April 2025.
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Knit Happens: Designing the Mechanics of Machine Knitting
Authors:
Cosima du Pasquier,
Sehui Jeong,
Pan Liu,
Susan Williams,
Allison M. Okamura,
Skylar Tibbits,
Tian Chen
Abstract:
Knit fabrics are mechanically durable and tough while sufficiently flexible to conform to curved substrates such as the human body. Recent advancements in industrial knitting enable unprecedented control over the pattern design and functionality of next generation knit fabrics. However, the ability to leverage this granular control to predict and tune the mechanical behavior of these fabrics remai…
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Knit fabrics are mechanically durable and tough while sufficiently flexible to conform to curved substrates such as the human body. Recent advancements in industrial knitting enable unprecedented control over the pattern design and functionality of next generation knit fabrics. However, the ability to leverage this granular control to predict and tune the mechanical behavior of these fabrics remains limited due to their complex hierarchical and entangled microstructure. This study establishes a comprehensive experimental and numerical framework to characterize and model the mechanical properties of industrial knitted fabrics. By integrating precise experiments, finite element modeling, and a strain energy-based homogenization approach, we provide an accurate demonstration of how stitch length, pattern, and yarn material govern the anisotropic mechanical response of knitted fabrics. In doing so, we establish clear quantitative links between these parameters and key material properties, including stiffness and anisotropy, that emerge directly from our energy-based model. Recognizing that industrial knitting systems can produce fabrics with spatially varying parameters, we extend our framework to predict heterogeneous knits. We show that material transitions have minimal impact on the fabric's overall mechanical response, so heterogeneous fabrics can be modeled with our framework as patchworks of homogeneous samples. We design the first industrially knit sleeve explicitly optimized for both fit and function, using heterogeneous patterns that conform to target arm musculature and ensure uniform stress distribution. This work bridges the gap between computational modeling and scalable manufacturing, unlocking new possibilities for wearable devices, assistive textiles, and functional applications.
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Submitted 22 January, 2025; v1 submitted 13 January, 2025;
originally announced January 2025.
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One-step synthesis of graphene containing topological defects
Authors:
Benedikt P. Klein,
Matthew A. Stoodley,
Joel Deyerling,
Luke A. Rochford,
Dylan B. Morgan,
David Hopkinson,
Sam Sullivan-Allsop,
Fulden Eratam,
Lars Sattler,
Sebastian M. Weber,
Gerhard Hilt,
Alexander Generalov,
Alexei Preobrajenski,
Thomas Liddy,
Leon B. S. Williams,
Tien-Lin Lee,
Alex Saywell,
Roman Gorbachev,
Sarah J. Haigh,
Christopher Allen,
Willi Auwärter,
Reinhard J. Maurer,
David A. Duncan
Abstract:
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used…
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Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.
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Submitted 4 November, 2024;
originally announced November 2024.
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Extreme Metastability of Diamond and its Transformation to BC8 Post-Diamond Phase of Carbon
Authors:
Kien Nguyen-Cong,
Jonathan T. Willman,
Joseph M. Gonzalez,
Ashley S. Williams,
Anatoly B. Belonoshko,
Stan G. Moore,
Aidan P. Thompson,
Mitchell A. Wood,
Jon H. Eggert,
Marius Millot,
Luis A. Zepeda-Ruiz,
Ivan I. Oleynik
Abstract:
Diamond possesses exceptional physical properties due to its remarkably strong carbon-carbon bonding, leading to significant resilience to structural transformations at very high pressures and temperatures. Despite several experimental attempts, synthesis and recovery of the theoretically predicted post-diamond BC8 phase remains elusive. Through quantum accurate, multi-million atom molecular dynam…
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Diamond possesses exceptional physical properties due to its remarkably strong carbon-carbon bonding, leading to significant resilience to structural transformations at very high pressures and temperatures. Despite several experimental attempts, synthesis and recovery of the theoretically predicted post-diamond BC8 phase remains elusive. Through quantum accurate, multi-million atom molecular dynamics (MD) simulations, we have uncovered the extreme metastability of diamond at very high pressures, significantly exceeding its range of thermodynamic stability. We predict the post-diamond BC8 phase to be experimentally accessible only within a narrow high pressure-temperature region of the carbon phase diagram. The diamond to BC8 transformation proceeds through pre-melting followed by BC8 nucleation and growth in the metastable carbon liquid. We propose a double-shock compression pathway to achieve BC8 synthesis, which is currently being explored in theory-inspired experiments at the National Ignition Facility.
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Submitted 22 January, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
Authors:
Martin S. Williams,
Manuel Alonso-Orts,
Marco Schowalter,
Alexander Karg,
Sushma Raghuvansy,
Jon P. McCandless,
Debdeep Jena,
Andreas Rosenauer,
Martin Eickhoff,
Patrick Vogt
Abstract:
The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The…
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The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $α$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $α$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $α$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $α$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $α$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $α$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $α$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$(10$\bar{1}$0).
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Submitted 21 November, 2023;
originally announced November 2023.
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Enhanced piezoelectric response at nanoscale vortex structures in ferroelectrics
Authors:
Xiaowen Shi,
Nimish Prashant Nazirkar,
Ravi Kashikar,
Dmitry Karpov,
Shola Folarin,
Zachary Barringer,
Skye Williams,
Boris Kiefer,
Ross Harder,
Wonsuk Cha,
Ruihao Yuan,
Zhen Liu,
Dezhen Xue,
Turab Lookman,
Inna Ponomareva,
Edwin Fohtung
Abstract:
The piezoelectric response is a measure of the sensitivity of a material's polarization to stress or its strain to an applied field. Using in-operando x-ray Bragg coherent diffraction imaging, we observe that topological vortices are the source of a five-fold enhancement of the piezoelectric response near the vortex core. The vortices form where several low symmetry ferroelectric phases and phase…
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The piezoelectric response is a measure of the sensitivity of a material's polarization to stress or its strain to an applied field. Using in-operando x-ray Bragg coherent diffraction imaging, we observe that topological vortices are the source of a five-fold enhancement of the piezoelectric response near the vortex core. The vortices form where several low symmetry ferroelectric phases and phase boundaries coalesce. Unlike bulk ferroelectric solid solutions in which a large piezoelectric response is associated with coexisting phases in the proximity of the triple point, the largest responses for pure BaTiO3 at the nanoscale are in spatial regions of extremely small spontaneous polarization at vortex cores. The response decays inversely with polarization away from the vortex, analogous to the behavior in bulk ceramics as the cation compositions are varied away from the triple point. We use first-principles-based molecular dynamics to augment our observations, and our results suggest that nanoscale piezoelectric materials with large piezoelectric response can be designed within a parameter space governed by vortex cores. Our findings have implications for the development of next-generation nanoscale piezoelectric materials.
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Submitted 22 May, 2023;
originally announced May 2023.
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Strong Fiber from Uniaxial Fullerene Supramolecules Aligned with Carbon Nanotubes
Authors:
John Bulmer,
Michelle Durán-Chaves,
Daniel M. Long,
Jeremiah Lipp,
Steven Williams,
Mitchell Trafford,
Anthony Pelton,
Jared Shank,
Benji Maruyama,
Larry Drummy,
Matteo Pasquali,
Hilmar Koerner,
Timothy Haugan
Abstract:
Carbon nanotube (CNT) wires approach copper's specific conductivity and surpass carbon fiber's strength, with further improvement anticipated with greater aspect ratios and incorporation of dopants with long-range structural order. Fullerenes assemble into multitudes of process-dependent supramolecular crystals and, while initially insulating, they become marginally conductive (up to 0.05 MSm…
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Carbon nanotube (CNT) wires approach copper's specific conductivity and surpass carbon fiber's strength, with further improvement anticipated with greater aspect ratios and incorporation of dopants with long-range structural order. Fullerenes assemble into multitudes of process-dependent supramolecular crystals and, while initially insulating, they become marginally conductive (up to 0.05 MSm$^{-1}$) and superconductive ($T_c=18^\circ$K with K and 28$^\circ$K with Rb) after doping. These were small (100's $μ$m long), soft (hardness comparable to indium), and typically unaligned, which hindered development of fullerene based wires. Individual fullerenes were previously incorporated into CNT fibers, although randomly without self-assembly into supramolecules. Here, a simple variation in established CNT acid extrusion creates a fiber composed of uniaxial chains of aligned fullerene supramolecules, self-assembled between aligned few-walled CNT bundles. This will provide a testbed for novel fullerene wire transport and prospects in CNT wire advancement.
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Submitted 20 February, 2023;
originally announced February 2023.
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Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
Authors:
J. P. McCandless,
D. Rowe,
N. Pieczulewski,
V. Protasenko,
M. Alonso-Orts,
M. S. Williams,
M. Eickhoff,
H. G. Xing,
D. A. Muller,
D. Jena,
P. Vogt
Abstract:
We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of…
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We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $α-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,μ\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $Δω\approx 0.45^{\circ}$ are achieved. Faceting is observed along the $α-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy.
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Submitted 30 January, 2023;
originally announced January 2023.
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Metastable Carbon at Extreme Conditions
Authors:
Ashley S. Williams,
Kien Nguyen-Cong,
Jonathan T. Willman,
Ivan I. Oleynik
Abstract:
Carbon at extreme conditions is the focus of intensive scientific inquiry due to its importance for applications in inertial confinement fusion experiments and for understanding the interior structure of carbon-rich exoplanets. The extreme metastability of diamond at very high pressures has been discovered in recent dynamic compression experiments. This work addresses an important question about t…
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Carbon at extreme conditions is the focus of intensive scientific inquiry due to its importance for applications in inertial confinement fusion experiments and for understanding the interior structure of carbon-rich exoplanets. The extreme metastability of diamond at very high pressures has been discovered in recent dynamic compression experiments. This work addresses an important question about the existence of other competitive metastable carbon phases that might be observed in shock experiments. It was found that diamond polytypes, carbon crystals with mixed cubic and hexagonal diamond stacking planes, are the only metastable carbon crystal phases energetically competitive with cubic diamond at pressures between 100 and 1,000 GPa. Above 1 TPa, no metastable phases are found to be energetically competitive with thermodynamically stable BC8 and simple cubic phases. The existence of low enthalpy diamond polytypes suggests that they are likely candidates for metastable phases of carbon to appear upon shockwave loading of diamond.
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Submitted 17 November, 2022;
originally announced November 2022.
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Machine Learning Interatomic Potential for Simulations of Carbon at Extreme Conditions
Authors:
Jonathan T. Willman,
Kien Nguyen-Cong,
Ashley S. Williams,
Anatoly B. Belonoshko,
Stan G. Moore,
Aidan P. Thompson,
Mitchell A. Wood,
Ivan I. Oleynik
Abstract:
A Spectral Neighbor Analysis (SNAP) machine learning interatomic potential (MLIP) has been developed for simulations of carbon at extreme pressures (up to 5 TPa) and temperatures (up to 20,000 K). This was achieved using a large database of experimentally relevant quantum molecular dynamics (QMD) data, training the SNAP potential using a robust machine learning methodology, and performing extensiv…
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A Spectral Neighbor Analysis (SNAP) machine learning interatomic potential (MLIP) has been developed for simulations of carbon at extreme pressures (up to 5 TPa) and temperatures (up to 20,000 K). This was achieved using a large database of experimentally relevant quantum molecular dynamics (QMD) data, training the SNAP potential using a robust machine learning methodology, and performing extensive validation against QMD and experimental data. The resultant carbon MLIP demonstrates unprecedented accuracy and transferability in predicting the carbon phase diagram, melting curves of crystalline phases, and the shock Hugoniot, all within 3% of QMD. By achieving quantum accuracy and efficient implementation on leadership class high performance computing systems, SNAP advances frontiers of classical MD simulations by enabling atomic-scale insights at experimental time and length scales.
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Submitted 2 May, 2022;
originally announced May 2022.
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Confinement-induced accumulation and spontaneous de-mixing of microscopic active-passive mixtures
Authors:
Stephen Williams,
Raphaël Jeanneret,
Idan Tuval,
Marco Polin
Abstract:
Understanding the out-of-equilibrium properties of noisy microscale systems and the extent to which they can be modulated externally, is a crucial scientific and technological challenge. It holds the promise to unlock disruptive new technologies ranging from targeted delivery of chemicals within the body to directed assembly of new materials. Here we focus on how active matter can be harnessed to…
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Understanding the out-of-equilibrium properties of noisy microscale systems and the extent to which they can be modulated externally, is a crucial scientific and technological challenge. It holds the promise to unlock disruptive new technologies ranging from targeted delivery of chemicals within the body to directed assembly of new materials. Here we focus on how active matter can be harnessed to transport passive microscopic systems in a statistically predictable way. Using a minimal active-passive system of weakly Brownian particles and swimming microalgae, we show that spatial confinement leads to a complex non-monotonic steady-state distribution of colloids, with a pronounced peak at the boundary. The particles' emergent active dynamics is well captured by a space-dependent Poisson process resulting from the space-dependent motion of the algae. Based on our findings, we then realise experimentally the spontaneous de-mixing of the active-passive suspension, opening the way for manipulating colloidal objects via controlled activity fields.
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Submitted 18 November, 2021;
originally announced November 2021.
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Crystal Structure of Silver Pentazolates AgN5 and AgN6
Authors:
Ashley S. Williams,
Kien Nguyen Cong,
Joseph M. Gonzalez,
Ivan I. Oleynik
Abstract:
Silver pentazolate, a high energy density compound containing cyclo-N5- anion, has recently been synthesized at ambient conditions. However, due to high sensitivity to irradiation, its crystal structure has not been determined. In this work, silver-nitrogen crystalline compounds at ambient conditions and high pressures, up to 100 GPa, are predicted and characterized by performing first-principles…
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Silver pentazolate, a high energy density compound containing cyclo-N5- anion, has recently been synthesized at ambient conditions. However, due to high sensitivity to irradiation, its crystal structure has not been determined. In this work, silver-nitrogen crystalline compounds at ambient conditions and high pressures, up to 100 GPa, are predicted and characterized by performing first-principles evolutionary crystal structure searching with variable stoichiometry. It is found that newly discovered AgN5 and AgN6 are the only thermodynamically stable silver-nitrogen compounds at pressures between 42 and 80 GPa. In contrast to AgN5, pentazolate AgN6 compound contains N2 diatomic molecules in addition to cyclo-N5-. These AgN5 and AgN6 crystals are metastable at ambient conditions with positive formation enthalpies of 54.95 kJ/mol and 46.24 kJ/mol, respectively. The underlying cause of the stability of cyclo-N5- silver pentazolates is the enhanced aromaticity enabled by the charge transfer from silver atoms to nitrogen rings. To aid in experimental identification of these materials, calculated Raman spectra are reported at ambient pressure: the frequencies of N5- vibrational modes of AgN5 are in good agreement with those measured in experiment.
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Submitted 1 November, 2021;
originally announced November 2021.
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Substrate-Versatile Direct-Write Printing of Carbon Nanotube-Based Flexible Conductors, Circuits, and Sensors
Authors:
Crystal E. Owens,
Robert J. Headrick,
Steven M. Williams,
Amanda J. Fike,
Matteo Pasquali,
Gareth H. McKinley,
A. John Hart
Abstract:
Printed electronics rely on the deposition of conductive liquid inks, typically onto polymeric or paper substrates. Among available conductive fillers for use in electronic inks, carbon nanotubes (CNTs) have high conductivity, low density, processability at low temperatures, and intrinsic mechanical flexibility. However, the electrical conductivity of printed CNT structures has been limited by CNT…
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Printed electronics rely on the deposition of conductive liquid inks, typically onto polymeric or paper substrates. Among available conductive fillers for use in electronic inks, carbon nanotubes (CNTs) have high conductivity, low density, processability at low temperatures, and intrinsic mechanical flexibility. However, the electrical conductivity of printed CNT structures has been limited by CNT quality and concentration, and by the need for nonconductive modifiers to make the ink stable and extrudable. This study introduces a polymer-free, printable aqueous CNT ink, and presents the relationships between printing resolution, ink rheology, and ink-substrate interactions. A model is constructed to predict printed feature sizes on impermeable substrates based on Wenzel wetting. Printed lines have conductivity up to 10,000 S/m. The lines are flexible, with < 5% change in DC resistance after 1,000 bending cycles, and <3% change in DC resistance with a bending radius down to 1 mm. Demonstrations focus on (i) conformality, via printing CNTs onto stickers that can be applied to curved surfaces, (ii) interactivity using a CNT-based button printed onto folded paper structure, and (iii) capacitive sensing of liquid wicking into the substrate itself. Facile integration of surface mount components on printed circuits is enabled by the intrinsic adhesion of the wet ink.
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Submitted 23 May, 2021;
originally announced May 2021.
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Improved Hopfield Network Optimization using Manufacturable Three-terminal Electronic Synapses
Authors:
Su-in Yi,
Suhas Kumar,
R. Stanley Williams
Abstract:
We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic devices. We first present a computationally-light, memristor-based, highly accurate compact model for the SONOS. Using the compact model, we describe techniques of simulated annealing in Hopfield networks by expl…
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We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic devices. We first present a computationally-light, memristor-based, highly accurate compact model for the SONOS. Using the compact model, we describe techniques of simulated annealing in Hopfield networks by exploiting imperfect problem definitions, current leakage, and the continuous tunability of the SONOS to enable transient chaotic group dynamics. We project improvements in energy consumption and latency for optimization relative to the best CPUs and GPUs by at least 4 orders of magnitude, and also exceeding the best projected memristor-based hardware; along with a 100-fold increase in error-resilient hardware size (i.e., problem size).
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Submitted 25 April, 2021;
originally announced April 2021.
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Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Miguel Muñoz Rojo,
R. Stanley Williams,
Mahnaz Islam,
Gregory Pitner,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
Eric Pop
Abstract:
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm ef…
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Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics.
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Submitted 14 December, 2020;
originally announced December 2020.
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Avoided quasiparticle decay and enhanced excitation continuum in the spin-1/2 near-Heisenberg triangular antiferromagnet Ba3CoSb2O9
Authors:
David Macdougal,
Stephanie Williams,
Dharmalingam Prabhakaran,
Robert I. Bewley,
David J. Voneshen,
Radu Coldea
Abstract:
We explore the magnetic excitations of the spin-1/2 triangular antiferromagnet Ba3CoSb2O9 in its 120 degree ordered phase using single-crystal high-resolution inelastic neutron scattering. Sharp magnons with no decay are observed throughout reciprocal space, with a strongly renormalized dispersion and multiple soft modes compared to linear spin wave theory. We propose an empirical parametrization…
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We explore the magnetic excitations of the spin-1/2 triangular antiferromagnet Ba3CoSb2O9 in its 120 degree ordered phase using single-crystal high-resolution inelastic neutron scattering. Sharp magnons with no decay are observed throughout reciprocal space, with a strongly renormalized dispersion and multiple soft modes compared to linear spin wave theory. We propose an empirical parametrization that can quantitatively capture the complete dispersions in the three-dimensional Brillouin zone and explicitly show that the dispersion renormalizations have the direct consequence that one to two magnon decays are avoided throughout reciprocal space, whereas such decays would be allowed for the unrenormalized dispersions. At higher energies, we observe a very strong continuum of excitations with highly-structured intensity modulations extending up at least 4x the maximum one-magnon energy. The one-magnon intensities decrease much faster upon increasing energy than predicted by linear spin wave theory and the higher-energy continuum contains much more intensity than can be accounted for by a two-magnon cross-section, suggesting a significant transfer of spectral weight from the high-energy magnons into the higher-energy continuum states. We attribute the strong dispersion renormalizations and substantial transfer of spectral weight to continuum states to the effect of quantum fluctuations and interactions beyond the spin wave approximation, and make connections to theoretical approaches that might capture such effects. Finally, through measurements in a strong applied magnetic field, we find evidence for magnetic domains with opposite senses for the spin rotation in the 120 degree ordered ground state, as expected in the absence of Dzyaloshinskii-Moriya interactions, when the sense of spin rotation is selected via spontaneous symmetry breaking.
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Submitted 28 June, 2020;
originally announced June 2020.
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Micro-Raman spectroscopy of ultrashort laser induced microexplosion sites in silicon
Authors:
L. A. Smillie,
M. Niihori,
L. Rapp,
B. Haberl,
J. S. Williams,
J. E. Bradby,
C. J. Pickard,
A. V. Rode
Abstract:
Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy and Raman imaging of arrays of microexplosions have been conducted to search for Raman signatures of these novel allotropes of silicon. A microexplosio…
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Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy and Raman imaging of arrays of microexplosions have been conducted to search for Raman signatures of these novel allotropes of silicon. A microexplosion is generated at the interface between a thick silicon dioxide confinement layer and underlying silicon. It is characterised by a void at the interface above a region of compressed silicon. Raman data show a rich assembly of silicon phases within the modified silicon. Residual stresses up to 4.5 GPa in the modifications have been determined from the shift in the main diamond-cubic Si Raman peak. The computed Raman spectra for a number of Si allotropes show reasonable agreement with the experimental spectra. Two structurally similar tetragonal phases of silicon (the rhombohedral r8 and the body-centred bc8) phases as well as recently identified bt8-Si are all highly likely to be contained in Raman spectra from many laser-modified sites. Although the st12-Si phase, previously observed in our electron diffraction studies of the highly compressively stressed laser-modified regions, was not reliably identified from Raman data, we suggest this could be due to the possible difference in residual stress level in the sites analysed by the electron diffraction and Raman spectra. Several other unidentified Raman peaks were observed, suggesting the presence of other unknown silicon phases. All of these silicon phases are expected to have attractive semiconducting properties including narrow band gap that open up novel applications.
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Submitted 31 March, 2020;
originally announced March 2020.
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Effect of Functionalization on the Properties of Silsesquioxane; a Comparison to Silica
Authors:
Marzieh Moradi,
Bailey M. Woods,
Hemali Rathnayake,
Stuart J. Williams,
Gerold A. Willing
Abstract:
While similar in nature, the properties of silica and silsesquioxane are very different, but little is known about these differences. In this paper, functionalized silsesquioxane microparticles are synthesized by adapting the modified Stöber method and post-functionalized with rhodamine-B. The as synthesized silsesquioxane particles are characterized by a variety of physical and chemical methods.…
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While similar in nature, the properties of silica and silsesquioxane are very different, but little is known about these differences. In this paper, functionalized silsesquioxane microparticles are synthesized by adapting the modified Stöber method and post-functionalized with rhodamine-B. The as synthesized silsesquioxane particles are characterized by a variety of physical and chemical methods. The synthesized particles are amorphous and nonporous in nature and are less dense than silica. While silsesquioxane and silica have some similar physical properties from their siloxane core, the organic functional group of silsesquioxane and the one-half oxygen difference in its structure impact many other properties of these particles like their charging behavior in liquids. These differences not only allow for the ease surface modification as compared to that necessary to modify silica, but also the use in a variety of colloidal systems that due to pH or electrolyte concentrations may not be suitable for silica particles. Keywords: silsesquioxane, Stober method, density, morphology, zeta potential
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Submitted 24 December, 2019;
originally announced December 2019.
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Non-localized states and high hole mobility in amorphous germanium
Authors:
Tuan T. Tran,
Jennifer Wong-Leung,
Lachlan A. Smillie,
Anders Hallen,
Maria G. Grimaldi,
Jim S. Williams
Abstract:
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrier mobility of these materials is usually very low, in the order of ~10^-3 - 10^-…
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Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrier mobility of these materials is usually very low, in the order of ~10^-3 - 10^-2 cm^2/(Vs) at room temperature. In this study, we present the Hall effect characterization of a-Ge prepared by self-ion implantation of Ge ions. The a-Ge prepared by this method is highly homogenous and has a mass density within 98.5% of the crystalline Ge. The material exhibits an exceptionally high electrical conductivity and carrier mobility (~100 cm^2/(Vs)) for an amorphous semiconductor. The temperature-dependent resistivity of the material is very-well defined with two distinctive regions, extrinsic and intrinsic conductivity, as in crystalline Ge. These results are direct evidence for a largely-preserved band structure and non-localized states of the valence band in a-Ge, as proposed by Tauc et al. from optical characterization alone. This finding is not only significant for the understanding of electrical conductivity in covalent disordered semiconductors, but the exceptionally high mobility we have observed in amorphous Ge opens up device applications not previously considered for amorphous semiconductors.
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Submitted 22 August, 2019;
originally announced August 2019.
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Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting
Authors:
Tuan T. Tran,
Quentin Hudspeth,
Yining Liu,
Lachlan A. Smillie,
Buguo Wang,
Renaud A. Bruce,
Jay Mathews,
Jeffrey M. Warrender,
J. S. Williams
Abstract:
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high reproducibility and precursor-free process. A Ge-Sn alloy with ~9 at.% Sn was shown to be feasible by this technique. However, the compressive strain, inherently…
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Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high reproducibility and precursor-free process. A Ge-Sn alloy with ~9 at.% Sn was shown to be feasible by this technique. However, the compressive strain, inherently occurring in heterogeneous epitaxy of the film, evidently delays the material from the direct bandgap transition. In this report, an attempt to synthesize a highly-relaxed Ge-Sn alloy will be presented. The idea is to produce a significantly thicker film with a higher implant energy and doses. X-ray reciprocal space mapping confirms that the material is largely-relaxed. The peak Sn concentration of the highest dose sample is 6 at.% as determined by Rutherford backscattering spectrometry. Cross-sectional transmission electron microscopy shows unconventional defects in the film as the mechanism for the strain relaxation. Finally, a photoluminescence (PL) study of the strain-relaxed alloys shows photon emission at a wavelength of 2045 nm, suggesting an active incorporation of Sn concentration of ~6 at.%. The results of this study pave way to produce high quality relaxed GeSn alloy using an industrially scalable method.
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Submitted 22 August, 2019;
originally announced August 2019.
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Effects of Microwave Irradiation on Multiwalled Carbon Nanotubes of Different Diameters
Authors:
P. Adamson,
S. Williams
Abstract:
We have studied the visible and infrared radiation emitted by multi-walled carbon nano-tubes of different diameters when exposed to 2.45 GHz microwaves. A comparison of the spectra suggests that multi-walled carbon nano-tubes with larger diameters emit radiation of greater intensity than those with smaller diameters. Furthermore, the multi-walled carbon nano-tubes continued to emit visible and inf…
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We have studied the visible and infrared radiation emitted by multi-walled carbon nano-tubes of different diameters when exposed to 2.45 GHz microwaves. A comparison of the spectra suggests that multi-walled carbon nano-tubes with larger diameters emit radiation of greater intensity than those with smaller diameters. Furthermore, the multi-walled carbon nano-tubes continued to emit visible and infrared radiation over the course of several microwave-irradiation cycles, with no degradation in the intensity of the emitted radiation. A comparison of Raman D- to G-band peak-intensity ratios revealed that microwave-irradiation did not significantly impact the multi-walled carbon nano-tubes' defect densities. The results of our experiments suggest that multi-walled carbon nano-tubes may have the potential for use in lighting technologies, and that ohmic heating caused by the polarization of the multi-walled carbon nano-tubes in the microwave field is likely responsible for the observed emissions of visible and infrared radiation.
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Submitted 14 July, 2019;
originally announced July 2019.
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Effects of Electron-Beam Irradiation on Graphene Oxide
Authors:
P. Adamson,
S. Williams
Abstract:
Graphene oxide (GO) is a nanofilm composed of graphene with various oxygen functional groups attached. GO is of interest due to its unique mechanical-enhancement properties, its tunable electronic properties, and its potential use in the wide-scale production of graphene. Scanning electron microscopes (SEMs) are frequently used to characterize and study GO films. The purpose of this project was to…
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Graphene oxide (GO) is a nanofilm composed of graphene with various oxygen functional groups attached. GO is of interest due to its unique mechanical-enhancement properties, its tunable electronic properties, and its potential use in the wide-scale production of graphene. Scanning electron microscopes (SEMs) are frequently used to characterize and study GO films. The purpose of this project was to study the effects of SEM-imaging on GO films. Using an SEM, we irradiated GO samples at electron beam-energies of 10, 20, and 30 keV (at a constant emission current of ~40 micro-amps) for times ranging from 15 minutes to one hour. Raman D- and G-band intensities were used to examine structural modifications/damage to GO samples as a function of beam energy and exposure time. The results suggest that imaging with a 30 keV electron beam for 30 minutes may lead to the formation of amorphous carbon, while imaging with 10 keV or 20 keV beams for 30 minutes does not have a significant effect on GO samples.
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Submitted 14 July, 2019;
originally announced July 2019.
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Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Greg Pitner,
Connor J. McClellan,
Jaewoo Jeong,
Mahesh G. Samant,
H-. S. Philip Wong,
Stuart S. P. Parkin,
R. Stanley Williams,
Eric Pop
Abstract:
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths fr…
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The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms.
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Submitted 7 March, 2019;
originally announced March 2019.
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Electronic structure of the neutral silicon-vacancy center in diamond
Authors:
B. L. Green,
M. W. Doherty,
E. Nako,
N. B. Manson,
U. F. S. D'Haenens-Johansson,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photolumine…
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The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 3A1u state is incorrect, and identify instead a coupled 3Eu - 3A2u system, the lower state of which has forbidden optical emission at zero stress and so efficiently decreases the total emission of the defect: we propose a solution employing finite strain to form the basis of a spin-photon interface. Isotopic enrichment definitively assigns the 976 nm transition associated with the defect to a local mode of the silicon atom.
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Submitted 24 April, 2018;
originally announced April 2018.
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Novel Rubidium Poly-Nitrogen Materials at High Pressure
Authors:
Ashley S. Williams,
Brad A. Steele,
van I. Oleynik
Abstract:
First-principles crystal structure search is performed to predict novel rubidium poly-nitrogen materials at high pressure by varying the stoichiometry, i. e. relative quantities of the constituent rubidium and nitrogen atoms. Three compounds of high nitrogen content, RbN_{5}, RbN_{2}, and Rb_{4}N_{6}, are discovered. Rubidium pentazolate (RbN5) becomes thermodynamically stable at pressures above \…
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First-principles crystal structure search is performed to predict novel rubidium poly-nitrogen materials at high pressure by varying the stoichiometry, i. e. relative quantities of the constituent rubidium and nitrogen atoms. Three compounds of high nitrogen content, RbN_{5}, RbN_{2}, and Rb_{4}N_{6}, are discovered. Rubidium pentazolate (RbN5) becomes thermodynamically stable at pressures above \unit[30]{GPa}. The charge transfer from Rb to N atoms enables aromaticity in cyclo-N_{^{_{5}}}^{-} while increasing the ionic bonding in the crystal. Rubidium pentazolate can be synthesized by compressing rubidium azide (RbN3) and nitrogen (N2) precursors above \unit[9.42]{GPa}, and its experimental discovery is aided by calculating the Raman spectrum and identifying the features attributed to N_{^{_{5}}}^{-} modes. The two other interesting compounds, RbN2 containing infinitely-long single-bonded nitrogen chains, and Rb_{4}N_{6} consisting of single-bonded N_{6} hexazine rings, become thermodynamically stable at pressures exceeding \unit[60]{GPa}. In addition to the compounds with high nitrogen content, Rb_{3}N_{3}, a new compound with 1:1 RbN stoichiometry containing bent N_{3} azides is found to exist at high pressures.
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Submitted 28 November, 2017;
originally announced November 2017.
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The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
Authors:
B. L. Green,
S. Mottishaw,
B. G. Breeze,
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. W. Doherty,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin…
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We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
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Submitted 29 May, 2017;
originally announced May 2017.
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Density Matrix Modeling of Quantum Cascade Lasers without an Artificially Localized Basis: A Generalized Scattering Approach
Authors:
Andrew Pan,
Benjamin A. Burnett,
Chi On Chui,
Benjamin S. Williams
Abstract:
We derive a density matrix (DM) theory for quantum cascade lasers (QCLs) that describes the influence of scattering on coherences through a generalized scattering superoperator. The theory enables quantitative modeling of QCLs, including localization and tunneling effects, using the well-defined energy eigenstates rather than the ad hoc localized basis states required by most previous DM models. O…
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We derive a density matrix (DM) theory for quantum cascade lasers (QCLs) that describes the influence of scattering on coherences through a generalized scattering superoperator. The theory enables quantitative modeling of QCLs, including localization and tunneling effects, using the well-defined energy eigenstates rather than the ad hoc localized basis states required by most previous DM models. Our microscopic approach to scattering also eliminates the need for phenomenological transition or dephasing rates. We discuss the physical interpretation and numerical implementation of the theory, presenting sets of both energy-resolved and thermally averaged equations which can be used for detailed or compact device modeling. We illustrate the theory's applications by simulating a high performance resonant-phonon terahertz (THz) QCL design which cannot be easily or accurately modeled using conventional DM methods. We show that the theory's inclusion of coherences is crucial for describing localization and tunneling effects consistent with experiment.
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Submitted 24 August, 2017; v1 submitted 8 May, 2017;
originally announced May 2017.
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Oxygen migration during resistance switching and failure of hafnium oxide memristors
Authors:
Suhas Kumar,
Ziwen Wang,
Xiaopeng Huang,
Niru Kumari,
Noraica Davila,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced perform…
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While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOx memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms, and demonstrated an improvement in endurance of about three orders of magnitude.
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Submitted 8 March, 2017;
originally announced March 2017.
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Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Authors:
Suhas Kumar,
Noraica Davila,
Ziwen Wang,
Xiaopeng Huang,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed techniq…
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We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
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Submitted 6 January, 2017;
originally announced January 2017.
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Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Authors:
Suhas Kumar,
Ziwen Wang,
Xiaopeng Huang,
Niru Kumari,
Noraica Davila,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physico-chemical forces, which remains elusive and controversial owing to t…
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Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physico-chemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron x-ray spectromicroscopy to study in-situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resetting the cells towards their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.
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Submitted 3 January, 2017;
originally announced January 2017.
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Single crystal growth from separated educts and its application to lithium transition-metal oxides
Authors:
F. Freund,
S. C. Williams,
R. D. Johnson,
R. Coldea,
P. Gegenwart,
A. Jesche
Abstract:
Thorough mixing of the starting materials is the first step of a crystal growth procedure. This holds true for almost any standard technique, whereas the intentional separation of educts is considered to be restricted to a very limited number of cases. A noticeable exception is the crystal growth in gels that allows for a better control of the nucleation by limiting the diffusion. The successful a…
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Thorough mixing of the starting materials is the first step of a crystal growth procedure. This holds true for almost any standard technique, whereas the intentional separation of educts is considered to be restricted to a very limited number of cases. A noticeable exception is the crystal growth in gels that allows for a better control of the nucleation by limiting the diffusion. The successful application of this principle to open systems, however, has remained elusive. Here we show that single crystals of α-Li2IrO3 can be grown from separated educts in an open crucible in air. Elemental lithium and iridium are oxidized and transported over a distance of typically one centimeter in an isothermal process. Single crystals grow from an exposed condensation point placed in between the educts. The method has also been applied to the growth of Li2RuO3, Li2PtO3 and β-Li2IrO3 and a successful use for various other materials is anticipated.
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Submitted 10 November, 2016; v1 submitted 15 April, 2016;
originally announced April 2016.
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Incommensurate Counterrotating Magnetic Order Stabilized by Kitaev Interactions in the Layered Honeycomb $α$-Li$_2$IrO$_3$
Authors:
S. C. Williams,
R. D. Johnson,
F. Freund,
Sungkyun Choi,
A. Jesche,
I. Kimchi,
S. Manni,
A. Bombardi,
P. Manuel,
P. Gegenwart,
R. Coldea
Abstract:
The layered honeycomb magnet $α$-Li$_2$IrO$_3$ has been theoretically proposed as a candidate to display novel magnetic behaviour associated with Kitaev interactions between spin-orbit entangled $j_{\rm eff}=1/2$ magnetic moments on a honeycomb lattice. Here we report single crystal magnetic resonant x-ray diffraction combined with powder magnetic neutron diffraction to reveal an incommensurate ma…
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The layered honeycomb magnet $α$-Li$_2$IrO$_3$ has been theoretically proposed as a candidate to display novel magnetic behaviour associated with Kitaev interactions between spin-orbit entangled $j_{\rm eff}=1/2$ magnetic moments on a honeycomb lattice. Here we report single crystal magnetic resonant x-ray diffraction combined with powder magnetic neutron diffraction to reveal an incommensurate magnetic order in the honeycomb layers with Ir magnetic moments counter-rotating on nearest-neighbour sites. This type of magnetic structure has not been reported experimentally before in honeycomb magnets and cannot be explained by a spin Hamiltonian with dominant isotropic (Heisenberg) couplings. The magnetic structure shares many key features with the magnetic order in the structural polytypes $β$ and $γ$-Li$_2$IrO$_3$, understood theoretically to be stabilized by dominant Kitaev interactions between Ir moments located on the vertices of three-dimensional hyperhoneycomb and stripyhoneycomb lattices, respectively. Based on this analogy and a theoretical soft-spin analysis of magnetic ground states for candidate spin Hamiltonians, we propose that Kitaev interactions also dominate in $α$-Li$_2$IrO$_3$, indicative of universal Kitaev physics across all three members of the harmonic honeycomb family of Li$_2$IrO$_3$ polytypes.
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Submitted 25 February, 2016;
originally announced February 2016.
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Ergodicity of non-Hamiltonian equilibrium systems
Authors:
Denis J. Evans,
Stephen R. Williams,
Lamberto Rondoni,
Debra J. Searles
Abstract:
It is well known that ergodic theory can be used to formally prove a weak form of relaxation to equilibrium for finite, mixing, Hamiltonian systems. In this Letter we extend this proof to any dynamics that preserves a mixing equilibrium distribution. The proof uses an approach similar to that used in umbrella sampling, and demonstrates the need for a form of ergodic consistency of the initial and…
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It is well known that ergodic theory can be used to formally prove a weak form of relaxation to equilibrium for finite, mixing, Hamiltonian systems. In this Letter we extend this proof to any dynamics that preserves a mixing equilibrium distribution. The proof uses an approach similar to that used in umbrella sampling, and demonstrates the need for a form of ergodic consistency of the initial and final distribution. This weak relaxation only applies to averages of physical properties. It says nothing about whether the distribution of states relaxes towards the equilibrium distribution or how long the relaxation of physical averages takes.
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Submitted 19 February, 2016;
originally announced February 2016.
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On the relaxation to nonequilibrium steady states
Authors:
Denis J. Evans,
Stephen R. Williams,
Debra J. Searles,
Lamberto Rondoni
Abstract:
The issue of relaxation has been addressed in terms of ergodic theory in the past. However, the application of that theory to models of physical interest is problematic, especially when dealing with relaxation to nonequilibrium steady states. Here, we consider the relaxation of classical, thermostatted particle systems to equilibrium as well as to nonequilibrium steady states, using dynamical noti…
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The issue of relaxation has been addressed in terms of ergodic theory in the past. However, the application of that theory to models of physical interest is problematic, especially when dealing with relaxation to nonequilibrium steady states. Here, we consider the relaxation of classical, thermostatted particle systems to equilibrium as well as to nonequilibrium steady states, using dynamical notions including decay of correlations. We show that the condition known as ΩT-mixing is necessary and sufficient to prove relaxation of ensemble averages to steady state values. We then observe that the condition known as weak T-mixing applied to smooth observables is sufficient for relaxation to be independent of the initial ensemble. Lastly, weak T-mixing for integrable functions makes relaxation independent of the ensemble member, apart from a negligible set of members enabling the result to be applied to observations from a single physical experiment. The results also allow us to give a microscopic derivation of Prigogine's principle of minimum entropy production in the linear response regime. The key to deriving these results lies in shifting the discussion from characteristics of dynamical systems, such as those related to metric transitivity, to physical measurements and to the behaviour of observables. This naturally leads to the notion of physical ergodicity.
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Submitted 18 February, 2016;
originally announced February 2016.
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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
Authors:
Suhas Kumar,
Catherine E. Graves,
John Paul Strachan,
Emmanuelle Merced Grafals,
Arthur L. David Kilcoyne,
Tolek Tyliszczak,
Johanna Nelson Weker,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of…
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Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.
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Submitted 4 February, 2016; v1 submitted 3 February, 2016;
originally announced February 2016.
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The phase transition in VO2 probed using x-ray, visible and infrared radiations
Authors:
Suhas Kumar,
John Paul Strachan,
A. L. David Kilcoyne,
Tolek Tyliszczak,
Matthew D. Pickett,
Charles Santori,
Gary Gibson,
R. Stanley Williams
Abstract:
Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical informa…
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Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here we use transmission of spatially averaged infrared (λ=1500 nm) and visible (λ=500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays (λ=2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occur at significantly lower temperatures than the Mott transition; and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.
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Submitted 19 February, 2016; v1 submitted 30 December, 2015;
originally announced December 2015.
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Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy
Authors:
Suhas Kumar,
John Paul Strachan,
Matthew D. Pickett,
Alexander Bratkovsky,
Yoshio Nishi,
R. Stanley Williams
Abstract:
The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.
The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.
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Submitted 19 November, 2015; v1 submitted 5 November, 2015;
originally announced November 2015.
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Effects of Microwave Absorption on Long and Short Single-Walled Carbon Nanotubes at 10-6 Torr
Authors:
S. Ferguson,
P. Bhatnagar,
I. Wright,
G. Sestric,
S. Williams
Abstract:
Carbon nanotubes have been observed to emit ultraviolet, visible and infrared radiation when exposed to microwaves. We have performed experiments in which both short (0.5 microns to 2 microns) and long (5 microns to 30 microns) single and double walled carbon nanotubes were exposed to 2.46 GHz microwaves at a pressure of 10^-6 Torr. Structural modifications of the-carbon nanotubes due to microwave…
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Carbon nanotubes have been observed to emit ultraviolet, visible and infrared radiation when exposed to microwaves. We have performed experiments in which both short (0.5 microns to 2 microns) and long (5 microns to 30 microns) single and double walled carbon nanotubes were exposed to 2.46 GHz microwaves at a pressure of 10^-6 Torr. Structural modifications of the-carbon nanotubes due to microwave absorption have been studied using the Raman spectroscopy G-band and D-band intensities, which suggest that microwave irradiation at relatively low pressure results in an increase in nanotube defects, especially in the case of the long nanotubes. Furthermore, a comparison of the spectra of the radiation emitted from the nanotubes suggests that the longer nanotubes emitted radiation of much greater intensity than the shorter nanotubes. Based on the results of the experiments and results described in previous reports, the ultraviolet, visible and infrared radiation emitted as the result of microwave absorption by carbon nanotubes seems to be primarily blackbody radiation emitted due to Joule heating. However, the presence of several broad photopeaks in the spectra of the emitted radiation (which do not seem to be related to gases absorbed by the nanotubes or the presence of catalyst particles) suggest that emissions are not the result of Joule heating alone.
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Submitted 27 October, 2015;
originally announced October 2015.
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Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
Authors:
Suhas Kumar,
Matthew D. Pickett,
John Paul Strachan,
Gary Gibson,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same curr…
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Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.
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Submitted 22 October, 2015;
originally announced October 2015.
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In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Authors:
Suhas Kumar,
Catherine E. Graves,
John Paul Strachan,
A. L. David Kilcoyne,
Tolek Tyliszczak,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study,…
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Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ~100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.
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Submitted 16 October, 2015;
originally announced October 2015.
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The monoclinic crystal structure of $α$-RuCl$_3$ and the zigzag antiferromagnetic ground state
Authors:
R. D. Johnson,
S. Williams,
A. A. Haghighirad,
J. Singleton,
V. Zapf,
P. Manuel,
I. I. Mazin,
Y. Li,
H. O. Jeschke,
R. Valenti,
R. Coldea
Abstract:
The layered honeycomb magnet alpha-RuCl3 has been proposed as a candidate to realize a Kitaev spin model with strongly frustrated, bond-dependent, anisotropic interactions between spin-orbit entangled jeff=1/2 Ru4+ magnetic moments. Here we report a detailed study of the three-dimensional crystal structure using x-ray diffraction on untwinned crystals combined with structural relaxation calculatio…
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The layered honeycomb magnet alpha-RuCl3 has been proposed as a candidate to realize a Kitaev spin model with strongly frustrated, bond-dependent, anisotropic interactions between spin-orbit entangled jeff=1/2 Ru4+ magnetic moments. Here we report a detailed study of the three-dimensional crystal structure using x-ray diffraction on untwinned crystals combined with structural relaxation calculations. We consider several models for the stacking of honeycomb layers and find evidence for a crystal structure with a monoclinic unit cell corresponding to a stacking of layers with a unidirectional in-plane offset, with occasional in-plane sliding stacking faults, in contrast with the currently-assumed trigonal 3-layer stacking periodicity. We report electronic band structure calculations for the monoclinic structure, which find support for the applicability of the jeff=1/2 picture once spin orbit coupling and electron correlations are included. We propose that differences in the magnitude of anisotropic exchange along symmetry inequivalent bonds in the monoclinic cell could provide a natural mechanism to explain the spin gap observed in powder inelastic neutron scattering, in contrast to spin models based on the three-fold symmetric trigonal structure, which predict a gapless spectrum within linear spin wave theory. Our susceptibility measurements on both powders and stacked crystals, as well as neutron powder diffraction show a single magnetic transition at TN ~ 13K. The analysis of the neutron data provides evidence for zigzag magnetic order in the honeycomb layers with an antiferromagnetic stacking between layers. Magnetization measurements on stacked single crystals in pulsed field up to 60T show a single transition around 8T for in-plane fields followed by a gradual, asymptotic approach to magnetization saturation, as characteristic of strongly anisotropic exchange interactions.
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Submitted 15 December, 2015; v1 submitted 9 September, 2015;
originally announced September 2015.
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Analysis of ZDDP content and thermal decomposition in motor oils using NAA and NMR
Authors:
S. Ferguson,
J. Johnson,
D. Gonzales,
C. Hobbs,
C. Allen,
S. Williams
Abstract:
Zinc dialkyldithiophosphates (ZDDPs) are one of the most common anti-wear additives present in commercially-available motor oils. The ZDDP concentrations of motor oils are most commonly determined using inductively coupled plasma atomic emission spectroscopy (ICP-AES). As part of an undergraduate research project, we have determined the Zn concentrations of eight commercially-available motor oils…
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Zinc dialkyldithiophosphates (ZDDPs) are one of the most common anti-wear additives present in commercially-available motor oils. The ZDDP concentrations of motor oils are most commonly determined using inductively coupled plasma atomic emission spectroscopy (ICP-AES). As part of an undergraduate research project, we have determined the Zn concentrations of eight commercially-available motor oils and one oil additive using neutron activation analysis (NAA), which has potential for greater accuracy and less sensitivity to matrix effects as compared to ICP-AES. The 31P nuclear magnetic resonance (31P-NMR) spectra were also obtained for several oil additive samples which have been heated to various temperatures in order to study the thermal decomposition of ZDDPs.
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Submitted 22 February, 2015;
originally announced February 2015.
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The nature of the glass and gel transitions in sticky spheres
Authors:
C. Patrick Royall,
Stephen R. Williams,
Hajime Tanaka
Abstract:
Glasses and gels are the two dynamically arrested, disordered states of matter. Despite their importance, their similarities and differences remain elusive, especially at high density. We identify dynamical and structural signatures which distinguish the gel and glass transitions in a colloidal model system of hard and "sticky" spheres. Gelation is induced by crossing the gas-liquid phase-separati…
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Glasses and gels are the two dynamically arrested, disordered states of matter. Despite their importance, their similarities and differences remain elusive, especially at high density. We identify dynamical and structural signatures which distinguish the gel and glass transitions in a colloidal model system of hard and "sticky" spheres. Gelation is induced by crossing the gas-liquid phase-separation line and the resulting rapid densification of the colloid-rich phase leads to a sharp change in dynamics and local structure. Thus, we find that gelation is first-order-like and can occur at much higher densities than previously thought: far from being low-density networks, gels have a clear "thermodynamic" definition which nevertheless leads to a non-equilibrium state with a distinct local structure characteristic of a rapidly quenched glass. In contrast, approaching the glass transition, the dynamics slow continuously accompanied by the emergence of local five-fold symmetric structure. Our findings provide a general thermodynamic, kinetic, and structural basis upon which to distinguish gelation from vitrification.
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Submitted 18 September, 2014;
originally announced September 2014.
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Liquid-liquid phase transition in an atomistic model glass former
Authors:
Thomas Speck,
C. Patrick Royall,
Stephen R. Williams
Abstract:
Whether the glass transition is caused by an underlying singularity or is a purely kinetic phenomenon is a significant outstanding question. Studying an atomistic glass former, we introduce a sampling method to access temperatures corresponding to dynamical regimes usually hard to reach with computer simulation. We find a peak in the specific heat, which we interpret as a drop in the density of st…
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Whether the glass transition is caused by an underlying singularity or is a purely kinetic phenomenon is a significant outstanding question. Studying an atomistic glass former, we introduce a sampling method to access temperatures corresponding to dynamical regimes usually hard to reach with computer simulation. We find a peak in the specific heat, which we interpret as a drop in the density of states. We further present evidence of a liquid-liquid transition to a state rich in locally favoured structures related to a recently discovered dynamical phase transition.
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Submitted 19 September, 2017; v1 submitted 2 September, 2014;
originally announced September 2014.
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The role of local structure in dynamical arrest
Authors:
C. Patrick Royall,
Stephen R. Williams
Abstract:
Amorphous solids, or glasses, are distinguished from crystalline solids by their lack of long-range structural order. At the level of two-body structural correlations, glassformers show no qualitative change upon vitrifying from a supercooled liquid. Nonetheless the dynamical properties of a glass are so much slower that it appears to take on the properties of a solid. While many theories of the g…
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Amorphous solids, or glasses, are distinguished from crystalline solids by their lack of long-range structural order. At the level of two-body structural correlations, glassformers show no qualitative change upon vitrifying from a supercooled liquid. Nonetheless the dynamical properties of a glass are so much slower that it appears to take on the properties of a solid. While many theories of the glass transition focus on dynamical quantities, a solid's resistance to flow is often viewed as a consequence of its structure. Here we address the viewpoint that this remains the case for a glass. Recent developments using higher-order measures show a clear emergence of structure upon dynamical arrest in a variety of glass formers and offer the tantalising hope of a structural mechanism for arrest. However a rigorous fundamental identification of such a causal link between structure and arrest remains elusive. We undertake a critical survey of this work in experiments, computer simulation and theory and discuss what might strengthen the link between structure and dynamical arrest. We move on to highlight the relationship between crystallisation and glass-forming ability made possible by this deeper understanding of the structure of the liquid state, and emphasize the potential to design materials with optimal glassforming and crystallisation ability, for applications such as phase-change memory. We then consider aspects of the phenomenology of glassy systems where structural measures have yet to make a large impact, such as polyamorphism (the existence of multiple liquid states), aging (the time-evolution of non-equilibrium materials below their glass transition) and the response of glassy materials to external fields such as shear.
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Submitted 17 February, 2015; v1 submitted 22 May, 2014;
originally announced May 2014.
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Spectra of Radiation Emitted from Open-Ended and Closed Carbon Nanotubes Exposed to Microwave Fields
Authors:
B. Cavness,
N. McGara,
S. Williams
Abstract:
We performed experiments in which both open-ended and closed carbon nanotubes were exposed to 2.46 GHz microwaves over the course of several irradiation and cooling cycles at a pressure of ~10-6 torr. The spectra of the radiation emitted from the nanotubes indicate that the intensity of the emitted radiation with wavelengths of 650-1000 nm increased during the irradiation cycles. However, the inte…
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We performed experiments in which both open-ended and closed carbon nanotubes were exposed to 2.46 GHz microwaves over the course of several irradiation and cooling cycles at a pressure of ~10-6 torr. The spectra of the radiation emitted from the nanotubes indicate that the intensity of the emitted radiation with wavelengths of 650-1000 nm increased during the irradiation cycles. However, the intensity of the radiation emitted from untreated nanotubes increased substantially more than the intensity of the radiation emitted from nanotubes that had been chemically treated in order to open nanotube ends. As open-ended nanotubes have a lower work function than closed nanotubes, and as nanotube ends are known to open as they are heated, our results suggest that the mechanism responsible for the emission of infrared, visible, and ultra-violet radiation from carbon nanotubes exposed to microwaves is field emission-induced luminescence.
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Submitted 3 June, 2015; v1 submitted 27 January, 2014;
originally announced January 2014.
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Identification of structure in condensed matter with the topological cluster classification
Authors:
Alex Malins,
Stephen R. Williams,
Jens Eggers,
C. Patrick Royall
Abstract:
We describe the topological cluster classification (TCC) algorithm. The TCC detects local structures with bond topologies similar to isolated clusters which minimise the potential energy for a number of monatomic and binary simple liquids with $m\leq13$ particles. We detail a modified Voronoi bond detection method that optimizes the cluster detection. The method to identify each cluster is outline…
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We describe the topological cluster classification (TCC) algorithm. The TCC detects local structures with bond topologies similar to isolated clusters which minimise the potential energy for a number of monatomic and binary simple liquids with $m\leq13$ particles. We detail a modified Voronoi bond detection method that optimizes the cluster detection. The method to identify each cluster is outlined, and a test example of Lennard-Jones liquid and crystal phases is considered and critically examined.
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Submitted 23 December, 2013; v1 submitted 21 July, 2013;
originally announced July 2013.
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Spectra of radiation emitted by single-walled and multi-walled carbon nanotubes during multiple microwave irradiation and cooling cycles
Authors:
S. Ferguson,
N. McGara,
B. Cavness,
D. Gonzales,
S. Williams
Abstract:
Carbon nanotubes have been observed to emit ultraviolet, visible, and infrared radiation when exposed to microwave fields. We have performed experiments in which both single-walled (~1 nm diameters) and multi-walled carbon nanotubes (>50 nm diameters) were exposed to 2.45 GHz microwaves during several irradiation and cooling cycles at a pressure of ~10-6 torr. A comparison of the spectra of the ra…
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Carbon nanotubes have been observed to emit ultraviolet, visible, and infrared radiation when exposed to microwave fields. We have performed experiments in which both single-walled (~1 nm diameters) and multi-walled carbon nanotubes (>50 nm diameters) were exposed to 2.45 GHz microwaves during several irradiation and cooling cycles at a pressure of ~10-6 torr. A comparison of the spectra of the radiation emitted by the nanotubes indicates that the intensity of radiation with wavelengths ranging from 700 to 1000 nm increased substantially during the course of five irradiation and cooling cycles. The data suggests that the mechanism responsible for the emissions is field emission-induced luminescence and that the intensity of the radiation emitted increased due to the opening of nanotube ends. Furthermore, the intensity of the radiation emitted by the multi-walled carbon nanotubes was much greater than the radiation emitted by the single-walled nanotubes. Scanning electron microscopy images indicate that most of the single-walled nanotubes were bundled together, while the multi-walled nanotubes were not. This bundling may have resulted in a lower field enhancement factor and/or screening effects which might help to explain the difference in the intensities of the radiation emitted by the samples.
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Submitted 3 June, 2015; v1 submitted 31 January, 2013;
originally announced January 2013.
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Transition in the Waiting-Time Distribution of Price-Change Events in a Global Socioeconomic System
Authors:
Guannan Zhao,
Mark McDonald,
Dan Fenn,
Stacy Williams,
Neil F. Johnson
Abstract:
The goal of developing a firmer theoretical understanding of inhomogenous temporal processes -- in particular, the waiting times in some collective dynamical system -- is attracting significant interest among physicists. Quantifying the deviations in the waiting-time distribution away from one generated by a random process, may help unravel the feedback mechanisms that drive the underlying dynamic…
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The goal of developing a firmer theoretical understanding of inhomogenous temporal processes -- in particular, the waiting times in some collective dynamical system -- is attracting significant interest among physicists. Quantifying the deviations in the waiting-time distribution away from one generated by a random process, may help unravel the feedback mechanisms that drive the underlying dynamics. We analyze the waiting-time distributions of high frequency foreign exchange data for the best executable bid-ask prices across all major currencies. We find that the lognormal distribution yields a good overall fit for the waiting-time distribution between currency rate changes if both short and long waiting times are included. If we restrict our study to long waiting-times, each currency pair's distribution is consistent with a power law tail with exponent near to 3.5. However for short waiting times, the overall distribution resembles one generated by an archetypal complex systems model in which boundedly rational agents compete for limited resources. Our findings suggest a gradual transition arises in trading behavior between a fast regime in which traders act in a boundedly rational way, and a slower one in which traders' decisions are driven by generic feedback mechanisms across multiple timescales and hence produce similar power-law tails irrespective of currency type.
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Submitted 10 December, 2012;
originally announced December 2012.
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Femtosecond X-ray Laser induced transient electronic phase change observed in fullerene C60
Authors:
Brian Abbey,
Ruben A. Dilanian,
Connie Darmanin,
Rebecca A. Ryan,
Corey T. Putkunz,
Andrew V. Martin,
Victor Streltsov,
Michael W. M. Jones,
Naylyn Gaffney,
Felix Hofmann,
Garth J. Williams,
Sebastian Boutet,
Marc Messerschmidt,
M. Marvin Siebert,
Sophie Williams,
Evan Curwood,
Eugeniu Balaur,
Andrew G. Peele,
Keith A. Nugent,
Harry M. Quiney
Abstract:
X-ray Free-Electron Lasers (XFELs) deliver X-ray pulses with a coherent flux that is approximately eight orders of magnitude greater than that available from a modern third generation synchrotron source. The power density in an XFEL pulse may be so high that it can modify the electronic properties of a sample on a femtosecond timescale. Exploration of the interaction of intense coherent X-ray puls…
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X-ray Free-Electron Lasers (XFELs) deliver X-ray pulses with a coherent flux that is approximately eight orders of magnitude greater than that available from a modern third generation synchrotron source. The power density in an XFEL pulse may be so high that it can modify the electronic properties of a sample on a femtosecond timescale. Exploration of the interaction of intense coherent X-ray pulses and matter is of both intrinsic scientific interest, and of critical importance to the interpretation of experiments that probe the structures of materials using high-brightness femtosecond XFEL pulses. In this letter, we report observations of the diffraction of an extremely intense 32 fs nanofocused X-ray pulses by a powder sample of crystalline C60. We find that the diffraction pattern at the highest available incident power exhibits significant structural signatures that are absent in data obtained at both third-generation synchrotron sources or from XFEL sources operating at low output power. These signatures are consistent with a highly ordered structure that does not correspond with any previously known phase of crystalline C60. We argue that these data indicate the formation of a transient phase that is formed by a dynamic electronic distortion induced by inner-shell ionisation of at least one carbon atom in each C60 molecule.
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Submitted 24 September, 2012;
originally announced September 2012.