In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing
Authors:
Alexis Fiset-Cyr,
Dan Dalacu,
Sofiane Haffouz,
Philip J. Poole,
Jean Lapointe,
Geof C. Aers,
Robin L. William
Abstract:
We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct satu…
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We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks.
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Submitted 8 April, 2018;
originally announced April 2018.
Preferential orientation of NV defects in CVD diamond films grown on (113) substrates
Authors:
M. Lesik,
T. Plays,
A. Tallaire,
J. Achard,
O. Brinza,
L. William,
M. Chipaux,
L. Toraille,
T. Debuisschert,
A. Gicquel,
J. F. Roch,
V. Jacques
Abstract:
Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electro…
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Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one specific orientation has an occurrence probability of 73 % when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 μs was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved with (111)-grown layers (almost 100 %), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications.
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Submitted 14 April, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.
