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Ab initio based empirical potential applied to tungsten at high pressure
Authors:
Robert C. Ehemann,
Jeremy W. Nicklas,
Hyoungki Park,
John W. Wilkins
Abstract:
Density-functional theory forces, stresses and energies comprise a database from which the optimal parameters of a spline-based empirical potential combining Stillinger-Weber and modified embedded-atom forms are determined. Accuracy of the potential is demonstrated by predictions of ideal shear, stacking fault, vacancy migration, elastic constants and phonons all between 0 and 100 GPa. Consistency…
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Density-functional theory forces, stresses and energies comprise a database from which the optimal parameters of a spline-based empirical potential combining Stillinger-Weber and modified embedded-atom forms are determined. Accuracy of the potential is demonstrated by predictions of ideal shear, stacking fault, vacancy migration, elastic constants and phonons all between 0 and 100 GPa. Consistency with existing models and experiments is demonstrated by application to screw dislocation core structure and deformation twinning in a tungsten nanorod. Lastly, the potential is used to study the high-pressure bcc to fcc phase transition.
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Submitted 15 February, 2017;
originally announced February 2017.
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Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride
Authors:
Hyoungki Park,
Amita Wadehra,
John W. Wilkins,
Antonio H. Castro Neto
Abstract:
We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN…
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We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN forms a set of discrete energy levels in the wide gap of h-BN. The electronic structures of these C clusters have a plethora of applications in optics, magneto-optics, and opto-electronics.
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Submitted 15 May, 2012;
originally announced May 2012.
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Phase Space Wannier Functions in Electronic Structure Calculations
Authors:
D. J. Sullivan,
J. J. Rehr,
J. W. Wilkins,
K. G. Wilson
Abstract:
We consider the applicability of phase space Wannier functions" to electronic structure calculations. These generalized Wannier functions are analogous to localized plane waves and constitute a complete, orthonormal set which is exponentially localized both in position and momentum space. Their properties are described and an illustrative application to bound states in one dimension is presented.…
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We consider the applicability of phase space Wannier functions" to electronic structure calculations. These generalized Wannier functions are analogous to localized plane waves and constitute a complete, orthonormal set which is exponentially localized both in position and momentum space. Their properties are described and an illustrative application to bound states in one dimension is presented. Criteria for choosing basis set size and lattice constant are discussed based on semi-classical, phase space considerations. Convergence of the ground state energy with respect to basis size is evaluated. Comparison with plane-waves basis sets indicates that the number of phase space Wannier functions needed for convergence can be signicantly smaller in three dimensions. PACS: 71.10.+x, 71.50.+t
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Submitted 20 July, 2010;
originally announced July 2010.
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Band offsets of semiconductor heterostructures: a hybrid density functional study
Authors:
Amita Wadehra,
Jeremy W. Nicklas,
John W. Wilkins
Abstract:
We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory. A high-quality special quasirandom structure models an infinite random pseudobinary alloy for constructing heterostructures alon…
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We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory. A high-quality special quasirandom structure models an infinite random pseudobinary alloy for constructing heterostructures along the (001) growth direction. Our excellent results for a variety of heterostructures establish HSE06's relevance to band engineering of high-performance electrical and optoelectronic devices.
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Submitted 15 July, 2010;
originally announced July 2010.
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Accuracy of Quantum Monte Carlo Methods for Point Defects in Solids
Authors:
William D. Parker,
John W. Wilkins,
Richard G. Hennig
Abstract:
Quantum Monte Carlo approaches such as the diffusion Monte Carlo (DMC) method are among the most accurate many-body methods for extended systems. Their scaling makes them well suited for defect calculations in solids. We review the various approximations needed for DMC calculations of solids and the results of previous DMC calculations for point defects in solids. Finally, we present estimates of…
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Quantum Monte Carlo approaches such as the diffusion Monte Carlo (DMC) method are among the most accurate many-body methods for extended systems. Their scaling makes them well suited for defect calculations in solids. We review the various approximations needed for DMC calculations of solids and the results of previous DMC calculations for point defects in solids. Finally, we present estimates of how approximations affect the accuracy of calculations for self-interstitial formation energies in silicon and predict DMC values of 4.4(1), 5.1(1) and 4.7(1) eV for the X, T and H interstitial defects, respectively, in a 16(+1)-atom supercell.
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Submitted 16 June, 2010;
originally announced June 2010.
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Phase transformation in Si from semiconducting diamond to metallic beta-Sn phase in QMC and DFT under hydrostatic and anisotropic stress
Authors:
R. G. Hennig,
A. Wadehra,
K. P. Driver,
W. D. Parker,
C. J. Umrigar,
J. W. Wilkins
Abstract:
Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressu…
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Silicon undergoes a phase transition from the semiconducting diamond phase to the metallic beta-Sn phase under pressure. We use quantum Monte Carlo calculations to predict the transformation pressure and compare the results to density functional calculations employing the LDA, PBE, PW91, WC, AM05, PBEsol and HSE06 exchange-correlation functionals. Diffusion Monte Carlo predicts a transition pressure of 14.0 +- 1.0 GPa slightly above the experimentally observed transition pressure range of 11.3 to 12.6 GPa. The HSE06 hybrid functional predicts a transition pressure of 12.4 GPa in excellent agreement with experiments. Exchange-correlation functionals using the local-density approximation and generalized-gradient approximations result in transition pressures ranging from 3.5 to 10.0 GPa, well below the experimental values. The transition pressure is sensitive to stress anisotropy. Anisotropy in the stress along any of the cubic axes of the diamond phase of silicon lowers the equilibrium transition pressure and may explain the discrepancy between the various experimental values as well as the small overestimate of the quantum Monte Carlo transition pressure.
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Submitted 16 June, 2010;
originally announced June 2010.
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Accurate Ab-initio Predictions of III-V Direct-Indirect Band Gap Crossovers
Authors:
Jeremy W. Nicklas,
John W. Wilkins
Abstract:
We report the compositional dependence of the electronic band structure for a range of III-V alloys. Density functional theory with the PBE functional is insufficient to mimic the electronic gap energies at different symmetry points of the Brillouin zone. The HSE hybrid functional with screened exchange accurately reproduces the experimental band gaps and, more importantly, the alloy concentration…
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We report the compositional dependence of the electronic band structure for a range of III-V alloys. Density functional theory with the PBE functional is insufficient to mimic the electronic gap energies at different symmetry points of the Brillouin zone. The HSE hybrid functional with screened exchange accurately reproduces the experimental band gaps and, more importantly, the alloy concentration of the direct-indirect gap crossovers for the III-V alloys studied here: AlGaAs, InAlAs, AlInP, InGaP, and GaAsP.
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Submitted 18 May, 2010;
originally announced May 2010.
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Force-matched embedded-atom method potential for niobium
Authors:
Michael R. Fellinger,
Hyoungki Park,
John W. Wilkins
Abstract:
Large-scale simulations of plastic deformation and phase transformations in alloys require reliable classical interatomic potentials. We construct an embedded-atom method potential for niobium as the first step in alloy potential development. Optimization of the potential parameters to a well-converged set of density-functional theory (DFT) forces, energies, and stresses produces a reliable and tr…
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Large-scale simulations of plastic deformation and phase transformations in alloys require reliable classical interatomic potentials. We construct an embedded-atom method potential for niobium as the first step in alloy potential development. Optimization of the potential parameters to a well-converged set of density-functional theory (DFT) forces, energies, and stresses produces a reliable and transferable potential for molecular dynamics simulations. The potential accurately describes properties related to the fitting data, and also produces excellent results for quantities outside the fitting range. Structural and elastic properties, defect energetics, and thermal behavior compare well with DFT results and experimental data, e.g., DFT surface energies are reproduced with less than 4% error, generalized stacking-fault energies differ from DFT values by less than 15%, and the melting temperature is within 2% of the experimental value.
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Submitted 23 April, 2010; v1 submitted 10 March, 2010;
originally announced March 2010.
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Quantum Monte Carlo for minerals at high pressure: Phase stability, equations of state, and elasticity of silica
Authors:
K. P. Driver,
R. E. Cohen,
Zhigang Wu,
B. Militzer,
P. López Ríos,
M. D. Towler,
R. J. Needs,
J. W. Wilkins
Abstract:
Silica is an abundant component of the Earth whose crystalline polymorphs play key roles in its structure and dynamics. As the simplest silicates, understanding pure silica is a prerequisite to understanding the rocky part of the Earth, its majority. First principle density functional theory (DFT) methods have often been used to accurately predict properties of silicates. Here, we study silica w…
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Silica is an abundant component of the Earth whose crystalline polymorphs play key roles in its structure and dynamics. As the simplest silicates, understanding pure silica is a prerequisite to understanding the rocky part of the Earth, its majority. First principle density functional theory (DFT) methods have often been used to accurately predict properties of silicates. Here, we study silica with quantum Monte Carlo (QMC), which until now was not computationally possible for such complex materials, and find that QMC overcomes the failures of DFT. QMC is a benchmark method that does not rely on density functionals, but rather explicitly treats the electrons and their interactions via a stochastic solution of Schrodinger's equation. Using ground state QMC plus phonons within the quasiharmonic approximation from density functional perturbation theory, we obtain the thermal pressure and equations of state of silica phases up to Earth's core-mantle boundary. Our results provide the most well-constrained equations of state and phase boundaries available for silica. QMC indicates a transition to the most dense alpha-PbO2 structure above the core-insulating D" layer, suggesting the absence of significant free silica in the bulk lower mantle, which has been assumed but never proven. We also find an accurate shear elastic constant and its geophysically important softening with pressure.
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Submitted 12 January, 2010;
originally announced January 2010.
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Classical potential describes martensitic phase transformations between the $α$, $β$ and $ω$ titanium phases
Authors:
R. G. Hennig,
T. J. Lenosky,
D. R. Trinkle,
S. P. Rudin,
J. W. Wilkins
Abstract:
A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density funct…
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A description of the martensitic transformations between the $α$, $β$ and $ω$ phases of titanium that includes nucleation and growth requires an accurate classical potential. Optimization of the parameters of a modified embedded atom potential to a database of density-functional calculations yields an accurate and transferable potential as verified by comparison to experimental and density functional data for phonons, surface and stacking fault energies and energy barriers for homogeneous martensitic transformations. Molecular dynamics simulations map out the pressure-temperature phase diagram of titanium. For this potential the martensitic phase transformation between $α$ and $β$ appears at ambient pressure and 1200 K, between $α$ and $ω$ at ambient conditions, between $β$ and $ω$ at 1200 K and pressures above 8 GPa, and the triple point occurs at 8GPa and 1200 K. Molecular dynamics explorations of the dynamics of the martensitic $α-ω$ transformation show a fast-moving interface with a low interfacial energy of 30 meV/Å$^2$. The potential is applicable to the study of defects and phase transformations of Ti.
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Submitted 12 June, 2007;
originally announced June 2007.
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Effects of morphology on phonons of nanoscopic silver grains
Authors:
Gustavo A. Narvaez,
Jeongnim Kim,
John W. Wilkins
Abstract:
The morphology of nanoscopic Ag grains significantly affects the phonons. Atomistic simulations show that realistic nanograin models display complex vibrational properties. (1) Single-crystalline grains. Nearly-pure torsional and radial phonons appear at low frequencies. For low-energy, faceted models, the breathing mode and acoustic gap (lowest frequency) are about 10% lower than predicted by e…
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The morphology of nanoscopic Ag grains significantly affects the phonons. Atomistic simulations show that realistic nanograin models display complex vibrational properties. (1) Single-crystalline grains. Nearly-pure torsional and radial phonons appear at low frequencies. For low-energy, faceted models, the breathing mode and acoustic gap (lowest frequency) are about 10% lower than predicted by elasticity theory (ET) for a continuum sphere of the same volume. The sharp edges and the atomic lattice split the ET-acoustic-gap quintet into a doublet and triplet. The surface protrusions associated with nearly spherical, high-energy models produce a smaller acoustic gap and a higher vibrational density of states (DOS) at frequencies ν<2 THz. (2) Twined icosahedra. In contrast to the single-crystal case, the inherent strain produce a larger acoustic gap, while the core atoms yield a DOS tail extending beyond the highest frequency of single-crystalline grains. (3) Mark's decahedra, in contrast to (1) and (2), do not have a breathing mode; although twined and strained, do not exhibit a high-frequency tail in the DOS. (4) Irregular nanograins. Grain boundaries and surface disorder yield non-degenerate phonon frequencies, and significantly smaller acoustic gap. Only these nanograins exhibit a low-frequency ν^2 DOS in the interval 1-2 THz.
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Submitted 15 October, 2005; v1 submitted 13 June, 2005;
originally announced June 2005.
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Fast Diffusion Mechanism of Silicon Tri-interstitial Defects
Authors:
Yaojun A. Du,
Stephen A. Barr,
Kaden R. A. Hazzard,
Thomas J. Lenosky,
Richard G. Hennig,
John W. Wilkins
Abstract:
We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the uti…
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We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the utility of combining tight-binding molecular dynamics with \textit{ab initio} density functional calculations to probe diffusion mechanisms. Using density functional theory to obtain diffusion barriers and the prefactor, we calculate a diffusion constant of $ 4 \cdot 10^{-5} \exp (- 0.49 {\rm eV} / k_{B} T) {\rm cm^2/s} $. Because of the low diffusion barrier, $I_{3}^{b}$ diffusion may be an important process under conditions such as ion implantation that creates excess interstitials, hence favoring formation of interstitial clusters.
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Submitted 18 June, 2005; v1 submitted 18 March, 2005;
originally announced March 2005.
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An Empirical Tight-Binding Model for Titanium Phase Transformations
Authors:
D. R. Trinkle,
M. D. Jones,
R. G. Hennig,
S. P. Rudin,
R. C. Albers,
J. W. Wilkins
Abstract:
For a previously published study of the titanium hcp (alpha) to omega (omega) transformation, a tight-binding model was developed for titanium that accurately reproduces the structural energies and electron eigenvalues from all-electron density-functional calculations. We use a fitting method that matches the correctly symmetrized wavefuctions of the tight-binding model to those of the density-f…
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For a previously published study of the titanium hcp (alpha) to omega (omega) transformation, a tight-binding model was developed for titanium that accurately reproduces the structural energies and electron eigenvalues from all-electron density-functional calculations. We use a fitting method that matches the correctly symmetrized wavefuctions of the tight-binding model to those of the density-functional calculations at high symmetry points. The structural energies, elastic constants, phonon spectra, and point-defect energies predicted by our tight-binding model agree with density-functional calculations and experiment. In addition, a modification to the functional form is implemented to overcome the "collapse problem" of tight-binding, necessary for phase transformation studies and molecular dynamics simulations. The accuracy, transferability and efficiency of the model makes it particularly well suited to understanding structural transformations in titanium.
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Submitted 26 February, 2005;
originally announced February 2005.
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Impurities block the alpha to omega martensitic transformation in titanium
Authors:
R. G. Hennig,
D. R. Trinkle,
J. Bouchet,
S. G. Srinivasan,
R. C. Albers,
J. W. Wilkins
Abstract:
The onset and kinetics of martensitic transformations are controlled by impurities trapped during the transformation. For the alpha to omega transformation in Ti, ab initio methods yield the changes in both the relative stability of and energy barrier between the phases. Using the recently discovered transformation pathway, we study interstitial O, N, C; substitutional Al and V; and Ti interstit…
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The onset and kinetics of martensitic transformations are controlled by impurities trapped during the transformation. For the alpha to omega transformation in Ti, ab initio methods yield the changes in both the relative stability of and energy barrier between the phases. Using the recently discovered transformation pathway, we study interstitial O, N, C; substitutional Al and V; and Ti interstitials and vacancies. The resulting microscopic picture explains the observations, specifically the suppression of the transformation in A-70 and Ti-6Al-4V titanium alloys.
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Submitted 5 September, 2003;
originally announced September 2003.
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A New Mechanism for the Alpha to Omega Martensitic Transformation in Pure Titanium
Authors:
D. R. Trinkle,
R. G. Hennig,
S. G. Srinivasan,
D. M. Hatch,
M. D. Jones,
H. T. Stokes,
R. C. Albers,
J. W. Wilkins
Abstract:
We propose a new direct mechanism for the pressure driven alpha to omega martensitic transformation in pure titanium. A systematic algorithm enumerates all possible mechanisms whose energy barriers are evaluated. A new, homogeneous mechanism emerges with a barrier at least four times lower than other mechanisms. This mechanism remains favorable in a simple nucleation model.
We propose a new direct mechanism for the pressure driven alpha to omega martensitic transformation in pure titanium. A systematic algorithm enumerates all possible mechanisms whose energy barriers are evaluated. A new, homogeneous mechanism emerges with a barrier at least four times lower than other mechanisms. This mechanism remains favorable in a simple nucleation model.
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Submitted 7 January, 2003;
originally announced January 2003.
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Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions
Authors:
Seungwon Lee,
Lars Jonsson,
John W. Wilkins,
Garnett W. Bryant,
Gerhard Klimeck
Abstract:
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials. The electron-hole Coulomb interaction is largely insensitive to both the real-space description of the atomic basis orbitals and differ…
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The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials. The electron-hole Coulomb interaction is largely insensitive to both the real-space description of the atomic basis orbitals and different ways of optimizing the tight-binding parameters. Tight-binding parameters that are optimized to give the best effective masses significantly improve the energies of the excitonic states due to the better single-particle energies. However, the Coulomb interaction does not vary much between different parameterizations. In addition, the sensitivity of the Coulomb interaction to the choice of atomic or bitals decreases with increasing dot size. Quantitatively, tight-binding treatments of correlation effects are reliable for dots with radii larger than 15--20 angstrom. The calculated excitonic gaps are in good agreement with recent photoluminescence data for Si and CdSe but agree less well for InAs. Further, the effective range of the electron-hole exchange interaction is investigated in detail. In quantum dots of the direct-gap materials InAs and CdSe, the exchange interaction can be long-ranged, extending over the whole dot when there is no local (onsite) orthogonality between the electron and hole wave functions. By contrast, for Si quantum dots the extra phase factor due to the indirect gap effectively limits the range to about 15 angstrom, independent of the dot size.
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Submitted 14 November, 2000;
originally announced November 2000.
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Thermally activated reorientation of di-interstitial defects in silicon
Authors:
J. Kim,
F. Kirchhoff,
W. G. Aulbur,
J. W. Wilkins,
F. S. Khan,
G. Kresse
Abstract:
We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations i…
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We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with the experiment. Our di-interstitial model establishes a link between point defects and extended defects, di-interstitials providing the nuclei for the growth.
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Submitted 1 April, 1999;
originally announced April 1999.
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Extended Si defects
Authors:
Jeongnim Kim,
John W. Wilkins,
Furrukh S. Khan,
Andrew Canning
Abstract:
We perform total energy calculations based on the tight-binding Hamiltonian scheme (i) to study the structural properties and energetics of the extended {311} defects depending upon their dimensions and interstitial concentrations and (ii) to find possible mechanisms of interstitial capture by and release from the {311} defects. The generalized orbital-based linear-scaling method implemented on…
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We perform total energy calculations based on the tight-binding Hamiltonian scheme (i) to study the structural properties and energetics of the extended {311} defects depending upon their dimensions and interstitial concentrations and (ii) to find possible mechanisms of interstitial capture by and release from the {311} defects. The generalized orbital-based linear-scaling method implemented on Cray-T3D is used for supercell calculations of large scale systems containing more than 1000 Si atoms.
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Submitted 19 November, 1996;
originally announced November 1996.
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Optical conductivity associated with solitons in the Peierls state as modified by zero-point-motion disorder
Authors:
Kihong Kim,
John W. Wilkins
Abstract:
We extend previous work to consider the effect of the soliton on the density of states and conductivity of quasi-one-dimensional Peierls systems with quantum lattice fluctuations, modeled by a random static disorder. Two features have been verified over an order of magnitude variation in the disorder. (1) The soliton density of states and the leading edges of both the soliton-to-band and the ban…
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We extend previous work to consider the effect of the soliton on the density of states and conductivity of quasi-one-dimensional Peierls systems with quantum lattice fluctuations, modeled by a random static disorder. Two features have been verified over an order of magnitude variation in the disorder. (1) The soliton density of states and the leading edges of both the soliton-to-band and the band-to-band conductivities have universal scaling forms. (2) The soliton-to-band conductivity has the remarkable feature that the leading edge is accurately predicted by the joint density of states while the trailing edge tracks the rigid-lattice conductivity. Or, in other words, disorder dominates the leading edge, while matrix element effects are predominant for the trailing edge.
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Submitted 4 March, 1996;
originally announced March 1996.
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Prediction of an undimerized, insulating, antiferromagnetic ground-state in halogen-bridged linear-chain Ni compounds
Authors:
V. I. Anisimov,
R. C. Albers,
J. M. Wills,
M. Alouani,
J. W. Wilkins
Abstract:
A parameter-free, mean-field, multi-orbital Hubbard model with nonspherical Coulomb and exchange interactions, implemented around all-electron local-density approximation (LDA) calculations, correctly predicts the band-gap energy, the absence of dimerization, and the antiferromagnetic ground state of halogen-bridged linear-chain Ni compounds. This approach also reproduces the insulating ground s…
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A parameter-free, mean-field, multi-orbital Hubbard model with nonspherical Coulomb and exchange interactions, implemented around all-electron local-density approximation (LDA) calculations, correctly predicts the band-gap energy, the absence of dimerization, and the antiferromagnetic ground state of halogen-bridged linear-chain Ni compounds. This approach also reproduces the insulating ground state and dimerization in PtX linear-chain compounds in agreement with experiment and previous calculations. Three "ps" figures are included at the end of the RevTex file and compressed using uufiles.
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Submitted 24 July, 1995;
originally announced July 1995.
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Alouani {\it et al.} Reply to Comment on Tuning of the CDW in MX Chains
Authors:
M. Alouani,
J. W. Wilkins,
R. C. Albers,
J. M. Wills
Abstract:
This is a reply to J. T. Gammel's Comment (9404047) on Tuning of the CDW in MX Chains. We show that while the harmonic elastic energy can fit a small region around zero dimerization, it is insufficient to treat the large amplitude CDW of the MX systems which was the main physics of our Letter (Phys. Rev. Lett. {\bf 71}, 1415 (1993)). We also stress that \underline{anharmonic} elastic potentials…
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This is a reply to J. T. Gammel's Comment (9404047) on Tuning of the CDW in MX Chains. We show that while the harmonic elastic energy can fit a small region around zero dimerization, it is insufficient to treat the large amplitude CDW of the MX systems which was the main physics of our Letter (Phys. Rev. Lett. {\bf 71}, 1415 (1993)). We also stress that \underline{anharmonic} elastic potentials are {\it essential} to explain the charge-density-wave systematics of an entire class of MX material.
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Submitted 10 August, 1994;
originally announced August 1994.
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Universal subgap optical conductivity in quasi-one-dimensional Peierls systems
Authors:
Kihong Kim,
Ross H. McKenzie,
John W. Wilkins
Abstract:
Quasi-one-dimensional Peierls systems with quantum and thermal lattice fluctuations can be modeled by a Dirac-type equation with a Gaussian-correlated off-diagonal disorder. A powerful new method gives the exact disorder-averaged Green function used to compute the optical conductivity. The strong subgap tail of the conductivity has a universal scaling form. The frequency and temperature dependen…
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Quasi-one-dimensional Peierls systems with quantum and thermal lattice fluctuations can be modeled by a Dirac-type equation with a Gaussian-correlated off-diagonal disorder. A powerful new method gives the exact disorder-averaged Green function used to compute the optical conductivity. The strong subgap tail of the conductivity has a universal scaling form. The frequency and temperature dependence of the calculated spectrum agrees with experiments on KCP(Br) and trans-polyacetylene.
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Submitted 11 November, 1993;
originally announced November 1993.
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Tuning of the CDW in the Halogen-Bridged Transition-Metal Linear-Chain Compounds
Authors:
M. Alouani,
J. W. Wilkins,
R. C. Albers,
J. M. Wills
Abstract:
Local-density-approximation calculations are used to show that the metal-metal distance along the chains controls the charge-density wave (CDW) in halogen-bridged transition-metal linear-chain (MX) compounds. The strength of the CDW can be understood in terms of a two band Su-Schrieffer-Heeger model if a hard-core ion-ion repulsion potential is also added. We predict a second-order phase transit…
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Local-density-approximation calculations are used to show that the metal-metal distance along the chains controls the charge-density wave (CDW) in halogen-bridged transition-metal linear-chain (MX) compounds. The strength of the CDW can be understood in terms of a two band Su-Schrieffer-Heeger model if a hard-core ion-ion repulsion potential is also added. We predict a second-order phase transition from an insulating to a semi-metallic ground state and explain trends in dimerization, bond-length ratios, band gaps, and Raman breathing modes in terms of the metal-metal distance. Three "ps" figures are included at the end of the file.
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Submitted 18 August, 1993;
originally announced August 1993.
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Zero Frequency Current Noise for the Double Tunnel Junction Coulomb Blockade
Authors:
Selman Hershfield,
John H. Davies,
Per Hyldgaard,
Christopher J. Stanton,
John W. Wilkins
Abstract:
We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average c…
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We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average current, on the other hand, only measures the mean number of electrons. Thus, the noise provides additional information about transport in these devices which is not available from measuring the current alone.
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Submitted 20 July, 1992;
originally announced July 1992.