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Designer gapped and tilted Dirac cones in lateral graphene superlattices
Authors:
A. Wild,
R. R. Hartmann,
E. Mariani,
M. E. Portnoi
Abstract:
We show that a planar array of bipolar waveguides in graphene can be used to engineer gapped and tilted two-dimensional Dirac cones within the electronic band structure. The presence of these gapped and tilted Dirac cones is demonstrated through a superlattice tight-binding model and verified using a transfer matrix calculation. By varying the applied gate voltages, the tilt parameter of these Dir…
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We show that a planar array of bipolar waveguides in graphene can be used to engineer gapped and tilted two-dimensional Dirac cones within the electronic band structure. The presence of these gapped and tilted Dirac cones is demonstrated through a superlattice tight-binding model and verified using a transfer matrix calculation. By varying the applied gate voltages, the tilt parameter of these Dirac cones can be controlled and their gaps can be tuned to fall in the terahertz range. The possibility of gate-tunable gapped Dirac cones gives rise to terahertz applications via interband transitions and designer Landau level spectra both of which can be controlled via Dirac cone engineering. We anticipate that our paper will encourage Dirac cone tilt and gap engineering for gate-tunable device applications in lateral graphene superlattices.
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Submitted 28 November, 2024;
originally announced November 2024.
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Optical valley separation in two-dimensional semimetals with tilted Dirac cones
Authors:
A. Wild,
E. Mariani,
M. E. Portnoi
Abstract:
Two-dimensional semimetals with tilted Dirac cones in the electronic band structure are shown to exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this optovalleytronic phenomenon occurs in systems with intact inversion and time-reversal symmetry that host massless Dirac cones in the band structure, thereby retaini…
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Two-dimensional semimetals with tilted Dirac cones in the electronic band structure are shown to exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this optovalleytronic phenomenon occurs in systems with intact inversion and time-reversal symmetry that host massless Dirac cones in the band structure, thereby retaining the exceptional graphene-like transport properties. As a result we demonstrate that optical valley separation is possible at arbitrarily low photon frequencies including the deep infrared and terahertz regimes with full gate tunability via Pauli blocking. As a specific example of our theory, we demonstrate tunable valley separation in the proposed two-dimensional tilted Dirac cone semimetal 8-$Pmmn$ borophene for incident infrared photons at room temperature.
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Submitted 11 January, 2023;
originally announced January 2023.
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Optical absorption in two-dimensional materials with tilted Dirac cones
Authors:
A. Wild,
E. Mariani,
M. E. Portnoi
Abstract:
The interband optical absorption of linearly polarised light by two-dimensional (2D) semimetals hosting tilted and anisotropic Dirac cones in the bandstructure is analysed theoretically. Super-critically tilted (type-II) Dirac cones are characterised by an absorption that is highly dependent on the incident photon polarisation and frequency, and is tunable by changing the Fermi level with a back-g…
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The interband optical absorption of linearly polarised light by two-dimensional (2D) semimetals hosting tilted and anisotropic Dirac cones in the bandstructure is analysed theoretically. Super-critically tilted (type-II) Dirac cones are characterised by an absorption that is highly dependent on the incident photon polarisation and frequency, and is tunable by changing the Fermi level with a back-gate voltage. Type-II Dirac cones exhibit open Fermi surfaces and large regions of the Brillouin zone where the valence and conduction bands sit either above or below the Fermi level. As a consequence, unlike their sub-critically tilted (type-I) counterparts, type-II Dirac cones have many states that are Pauli blocked even when the Fermi level is tuned to the level crossing point. We analyse the interplay of the tilt parameter with the Fermi velocity anisotropy, demonstrating that the optical response of a Dirac cone cannot be described by its tilt alone. As a special case of our general theory we discuss the proposed 2D type-I semimetal 8-$Pmmn$ Borophene. Guided by our in-depth analytics we develop an optical recipe to fully characterise the tilt and Fermi velocity anisotropy of any 2D tilted Dirac cone solely from its absorption spectrum. We expect our work to encourage Dirac cone engineering as a major route to create gate-tunable thin-film polarisers.
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Submitted 8 June, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
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Mapping borophene onto graphene: Quasi-exact solutions for guiding potentials in tilted Dirac cones
Authors:
R. A. Ng,
A. Wild,
M. E. Portnoi,
R. R. Hartmann
Abstract:
We show that if the solutions to the (2+1)-dimensional massless Dirac equation for a given 1D potential are known, then they can be used to obtain the eigenvalues and eigenfunctions for the same potential, orientated at an arbitrary angle, in a tilted anisotropic 2D Dirac material. This simple set of transformations enables all the exact and quasi-exact solutions associated with 1D quantum wells i…
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We show that if the solutions to the (2+1)-dimensional massless Dirac equation for a given 1D potential are known, then they can be used to obtain the eigenvalues and eigenfunctions for the same potential, orientated at an arbitrary angle, in a tilted anisotropic 2D Dirac material. This simple set of transformations enables all the exact and quasi-exact solutions associated with 1D quantum wells in graphene to be applied to the confinement problem in tilted Dirac materials such as borophene. We also show that smooth electron waveguides in tilted Dirac materials can be used to manipulate the degree of valley polarization of quasiparticles travelling along a particular direction of the channel. We examine the particular case of the hyperbolic secant potential to model realistic top-gated structures for valleytronic applications.
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Submitted 21 November, 2021;
originally announced November 2021.
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Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Authors:
Rai Moriya,
Kentarou Sawano,
Yusuke Hoshi,
Satoru Masubuchi,
Yasuhiro Shiraki,
Andreas Wild,
Christian Neumann,
Gerhard Abstreiter,
Dominique Bougeard,
Takaaki Koga,
Tomoki Machida
Abstract:
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba…
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The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.
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Submitted 7 August, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Few electron double quantum dot in an isotopically purified $^{28}$Si quantum well
Authors:
Andreas Wild,
Johannes Kierig,
Jürgen Sailer,
Joel Ager III,
Eugene Haller,
Gerhard Abstreiter,
Stefan Ludwig,
Dominique Bougeard
Abstract:
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the…
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We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the $T_{2}$ spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.
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Submitted 6 April, 2012; v1 submitted 15 February, 2012;
originally announced February 2012.
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Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment
Authors:
J. Sailer,
A. Wild,
V. Lang,
A. Siddiki,
D. Bougeard
Abstract:
We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent expla…
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We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent explanation so far. Based on our experimental findings we are able to develop a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.
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Submitted 15 July, 2010;
originally announced July 2010.
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Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
Authors:
A. Wild,
J. Sailer,
J. Nützel,
G. Abstreiter,
S. Ludwig,
D. Bougeard
Abstract:
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on t…
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We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.
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Submitted 14 July, 2010;
originally announced July 2010.
