Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic ferromagnet interface through standing-wave excitation
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giacomo Ghiringhelli,
Yingying Peng,
Gabriella Maria De Luca,
Daniele Di Castro,
Davide Betto,
Mathias Gehlmann,
Tom Wijnands,
Mark Huijben,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Timm Gerber,
Giuseppe Balestrino,
Nicholas B. Brookes,
Lucio Braicovich,
Charles S. Fadley
Abstract:
We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromag…
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We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO). Easily observable SW effects on the RIXS excitations were found in these LSCO/LSMO multilayers. In addition, we observe different depth distribution of the RIXS excitations. The magnetic excitations are found to arise from the LSCO/LSMO interfaces, and there is also a suggestion that one of the dd excitations comes from the interfaces. SW-RIXS measurements of correlated-oxide and other multilayer heterostructures should provide unique layer-resolved insights concerning their orbital and magnetic excitations, as well as a challenge for RIXS theory to specifically deal with interface effects.
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Submitted 6 December, 2018; v1 submitted 27 February, 2018;
originally announced February 2018.
Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping
Authors:
Y. Z. Chen,
F. Trier,
T. Wijnands,
R. J. Green,
N. Gauquelin,
R. Egoavil,
D. V. Christensen,
G. Koster,
M. Huijben,
N. Bovet,
S. Macke,
F. He,
R. Sutarto,
N. H. Andersen,
G. E. D. K. Prawiroatmodjo,
T. S. Jespersen,
J. A. Sulpizio,
M. Honig,
S. Linderoth,
S. Ilani,
J. Verbeeck,
G. Van Tendeloo,
G. Rijnders,
G. A. Sawatzky,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon…
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The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
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Submitted 22 April, 2015;
originally announced April 2015.
