Skip to main content

Showing 1–2 of 2 results for author: Wijnands, T

Searching in archive cond-mat. Search in all archives.
.
  1. arXiv:1802.09743  [pdf

    cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

    Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic ferromagnet interface through standing-wave excitation

    Authors: Cheng-Tai Kuo, Shih-Chieh Lin, Giacomo Ghiringhelli, Yingying Peng, Gabriella Maria De Luca, Daniele Di Castro, Davide Betto, Mathias Gehlmann, Tom Wijnands, Mark Huijben, Julia Meyer-Ilse, Eric Gullikson, Jeffrey B. Kortright, Arturas Vailionis, Nicolas Gauquelin, Johan Verbeeck, Timm Gerber, Giuseppe Balestrino, Nicholas B. Brookes, Lucio Braicovich, Charles S. Fadley

    Abstract: We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromag… ▽ More

    Submitted 6 December, 2018; v1 submitted 27 February, 2018; originally announced February 2018.

    Comments: 18 pages, 3 figures, plus supplemental materials (14 pages)

    Journal ref: Phys. Rev. B 98, 235146 (2018)

  2. arXiv:1504.05986  [pdf

    cond-mat.str-el cond-mat.mtrl-sci

    Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

    Authors: Y. Z. Chen, F. Trier, T. Wijnands, R. J. Green, N. Gauquelin, R. Egoavil, D. V. Christensen, G. Koster, M. Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N. H. Andersen, G. E. D. K. Prawiroatmodjo, T. S. Jespersen, J. A. Sulpizio, M. Honig, S. Linderoth, S. Ilani, J. Verbeeck, G. Van Tendeloo, G. Rijnders, G. A. Sawatzky, N. Pryds

    Abstract: The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon… ▽ More

    Submitted 22 April, 2015; originally announced April 2015.

    Comments: 29 pages, 5 figures, Accepted for publication in Nature Materials