Distinguishing Carrier Transport and Interfacial Recombination at Perovskite-Transport Layer Interfaces Using Ultrafast Spectroscopy and Numerical Simulation
Authors:
Edward Butler-Caddle,
K. D. G. Imalka Jayawardena,
Anjana Wijesekara,
Rebecca L Milot,
James Lloyd-Hughes
Abstract:
In perovskite solar cells, photovoltaic action is created by charge transport layers (CTLs) either side of the light-absorbing metal halide perovskite semiconductor. Hence, the rates for desirable charge extraction and unwanted interfacial recombination at the perovskite-CTL interfaces play a critical role for device efficiency. Here, the electrical properties of perovskite-CTL bilayer heterostruc…
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In perovskite solar cells, photovoltaic action is created by charge transport layers (CTLs) either side of the light-absorbing metal halide perovskite semiconductor. Hence, the rates for desirable charge extraction and unwanted interfacial recombination at the perovskite-CTL interfaces play a critical role for device efficiency. Here, the electrical properties of perovskite-CTL bilayer heterostructures are obtained using ultrafast THz and optical studies of the charge carrier dynamics after pulsed photoexcitation, combined with a physical model of charge carrier transport that includes the prominent Coulombic forces that arise after selective charge extraction into a CTL, and cross-interfacial recombination. The charge extraction velocity at the interface and the ambipolar diffusion coefficient within the perovskite are determined from the experimental decay profiles for heterostructures with three of the highest performing CTLs, namely C$_{60}$, PCBM and Spiro-OMeTAD. Definitive targets for the further improvement of devices are deduced: fullerenes deliver fast electron extraction, but suffer from a large rate constant for cross-interface recombination or hole extraction. Conversely, Spiro-OMeTAD exhibits slow hole extraction but does not increase the perovskite's surface recombination rate, likely contributing to its success in solar cell devices.
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Submitted 24 July, 2024; v1 submitted 3 July, 2024;
originally announced July 2024.
Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
Authors:
S. Tyler,
J. Newland,
P. Hepworth,
A. Wijesekara,
I. R. Gullick,
M. L. Markham,
M. E. Newton,
B. L. Green
Abstract:
Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with…
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Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions.
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Submitted 17 May, 2024;
originally announced May 2024.
