Showing 1–1 of 1 results for author: Wiggers, F B
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Bandgap engineering in an epitaxial two-dimensional honeycomb Si$_{6-x}$Ge$_x$ alloy
Authors:
Antoine Fleurence,
Yuto Awatani,
Camille Huet,
Frank B. Wiggers,
Steaphan M. Wallace,
Takahiro Yonezawa,
Yukiko Yamada-Takamura
Abstract:
In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are ra…
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In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with $x$ observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.
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Submitted 11 March, 2020; v1 submitted 10 March, 2020;
originally announced March 2020.
