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Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
Authors:
Aleksandra Wierzbicka,
Agata Kaminska,
Kamil Sobczak,
Dawid Jankowski,
Kamil Koronski,
Pawel Strak,
Marta Sobanska,
Zbigniew R. Zytkiewicz
Abstract:
Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescence (PL) and transmission electron microscopy (TEM) techniques were used to study the influence of thickness of AlN and GaN sublayers on strain distribution in GaN/AlN SL structures. Detailed X-ray diffraction measurement…
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Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescence (PL) and transmission electron microscopy (TEM) techniques were used to study the influence of thickness of AlN and GaN sublayers on strain distribution in GaN/AlN SL structures. Detailed X-ray diffraction measurements demonstrate that the strain occurring in SLs generally decreases with an increase of well/barrier thickness. Fitting of X-ray diffraction curves allowed determining the real thicknesses of the GaN wells and AlN barriers. Since blurring of the interfaces causes deviation of calculated data from experimental results the quality of the interfaces has been evaluated as well and compared with results of TEM measurements. For the samples with thinner wells/barriers the presence of pin-holes and threading dislocations has been observed in TEM measurements. The best quality of interfaces has been found for the sample with a well/barrier thickness of 3 nm. Finally, PL spectra showed that due to Quantum-Confined Stark Effect the PL peak energies of the SLs decreased with increasing the width of the GaN quantum wells and AlN barriers. The effect is well modelled by ab initio calculations based on the density functional theory applied for tetragonally strained structures of the same geometry using a full tensorial representation of the strain in the SLs.
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Submitted 28 March, 2025;
originally announced March 2025.
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New insights into crystallographic relation and lattice dynamics effects in {CdO/MgO} superlattices grown by plasma-assisted molecular beam epitaxy
Authors:
Aleksandra Wierzbicka,
Ewa Przezdziecka,
Igor Perlikowski,
Eunika Zielony,
Abinash Adhikari,
Anastasiia Lysak
Abstract:
This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates of different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive analysis using X-ray diffraction and Raman spectroscopy. High-resolution X-ray diffraction studies unveil a significant influence of surface symmetry on both th…
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This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates of different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive analysis using X-ray diffraction and Raman spectroscopy. High-resolution X-ray diffraction studies unveil a significant influence of surface symmetry on both the substrates and the epitaxial layers, particularly with respect to the occurrence of twins in the superlattices. Remarkably, no twins are observed on r-oriented sapphire substrates, resulting in improved interface and crystallographic quality. The results of studies demonstrated in this work show that the growth rate of CdO sublayers within {CdO/MgO} superlattices is intricately dependent on the substrate orientation. Notably, the c-plane and m-plane sapphire substrates yielded thicker CdO sublayers, indicating comparable growth rates for these crystallographic orientations. Conversely, the a-plane and r-plane orientations seemed to favor a slower growth rate of CdO sublayers.
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Submitted 17 February, 2025;
originally announced February 2025.
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Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy
Authors:
Anastasiia Lysak,
Aleksandra Wierzbicka,
Sergio Magalhaes,
Piotr Dlzewski,
Rafal Jakiela,
Michal Szot,
Zeinab Khosravizadeh,
Abinash Adhikari,
Adrian Kozanecki,
Ewa Przezdziecka
Abstract:
In situ Eu-doped ZnCdO-ZnMgO superlattices with varying ZnCdO:Eu and ZnMgO sublayers thicknesses were deposited by plasma assisted molecular beam epitaxy.
In situ Eu-doped ZnCdO-ZnMgO superlattices with varying ZnCdO:Eu and ZnMgO sublayers thicknesses were deposited by plasma assisted molecular beam epitaxy.
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Submitted 12 February, 2025;
originally announced February 2025.
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Influence of the growth temperature and annealing on the optical properties of {CdO/ZnO}30 superlattices
Authors:
E. Przeździecka,
A. Lysak,
A. Adhikari,
M. Stachowicz,
A. Wierzbicka,
R. Jakiela,
K. Zeinab,
P. Sybilski,
A. Kozanecki
Abstract:
Optical properties of the short period {CdO/ZnO} superlattices grown by plasma assisted MBE were analyzed. The superlattice (SLs) structures were successfully obtained at different growth temperatures from 360 to 550 °C. Interestingly, the growth temperature of the SLs influences quality of multilayers and also optical properties of these structures. After annealing at 900°C by rapid thermal metho…
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Optical properties of the short period {CdO/ZnO} superlattices grown by plasma assisted MBE were analyzed. The superlattice (SLs) structures were successfully obtained at different growth temperatures from 360 to 550 °C. Interestingly, the growth temperature of the SLs influences quality of multilayers and also optical properties of these structures. After annealing at 900°C by rapid thermal method various defect luminescence located at different energetic positions , were detected, and intensity of luminescence strongly depends on applied growth temperature.
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Submitted 4 February, 2025;
originally announced February 2025.
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Temperature dependence of the bandgap of Eu doped {ZnCdO/ZnO}30 multilayer structures
Authors:
A. Lysak,
E. Przeździecka,
A. Wierzbicka,
R. Jakiela,
Z. Khosravizadeh,
M. Szot,
A. Adhikari,
A. Kozanecki
Abstract:
In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) an…
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In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) and X-ray diffraction methods. SIMS measurements showed that annealing at 700°C and 900°C practically did not change the Eu concentration and the rare earth depth profiles are uniform. It was found that the band gap depends on the concentration of Eu and it was changed by rapid thermal annealing. Varshni and Bose-Einstein equations were used to describe the temperature dependence of the band gap of {ZnCdO/ZnO}30:Eu multilayer structures and Debye and Einstein temperatures were obtained.
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Submitted 16 February, 2024;
originally announced February 2024.
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MBE grown preferentially oriented CdMgO alloy on m- and c-plane sapphire substrates
Authors:
A. Adhikari,
A. Lysak,
A. Wierzbicka,
P. Sybilski,
A. Reszka,
B. S. Witkowski,
E. Przezdziecka
Abstract:
Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carr…
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Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carried out using X-ray diffraction and Atomic Force Microscope (AFM) techniques whereas composition analysis was done by Energy-dispersive X-ray (EDX) spectroscopy method. The optical properties of thin films were investigated by UV-Vis spectroscopy at room temperature. X-ray analysis confirmed the presence of cubic rock salt structure with <111> CdMgO crystallographic orientation on c-plane sapphire and <110> CdMgO preferential orientation on m-plane sapphire. The surface roughness was measured by the AFM. From the absorption curve, the optical bandgaps were determined using Tauc relation and it was found that the bandgap of films is influenced by the incorporation of Mg2+ ions into the CdO lattice. Bowing parameter was calculated both for samples on m- and c- sapphires.
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Submitted 14 February, 2023;
originally announced February 2023.
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Effective Mg Incorporation in CdMgO Alloy on Quartz Substrate Grown by Plasma-assisted MBE
Authors:
A. Adhikari,
A. Wierzbicka,
A. Lysak,
P. Sybilski,
B. S. Witkowski,
E. Przezdziecka
Abstract:
The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed…
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The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed using the X-ray diffraction (XRD) technique. The decreases in average crystallite size and lattice parameters were observed with an increase in Mg content in the alloys. XRD analysis confirms a single cubic phase is obtained for alloy compositions. The elemental and morphological studies were carried out using energy dispersive x-ray (EDX) spectroscopy and atomic force microscope (AFM) technique, respectively. The optical investigation was carried out using UV-Vis spectroscopy. The optical bandgaps were estimated using the Tauc relation and it was varied from 2.34 eV to 3.47 eV by varying the Mg content from zero to 55% in the alloys. The Urbach energy increases from 112 meV to 350 meV which suggests a more disordered localized state with an increase in Mg incorporation in the alloys.
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Submitted 21 October, 2022;
originally announced October 2022.
