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Probing barrier transmission in ballistic graphene
Authors:
Daniel Gunlycke,
Carter T. White
Abstract:
We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering properties in equilibrium without the need for lateral transport measurements. This finding will facilitate vetting of extended structural defects such as grain boundari…
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We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering properties in equilibrium without the need for lateral transport measurements. This finding will facilitate vetting of extended structural defects such as grain boundaries or line defects as transport barriers for switchable graphene resonant tunneling transistors. We also show that barriers could exhibit double minima and that the charge density away from highly reflective barriers and edges scales as $x^{-2}$.
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Submitted 29 December, 2014;
originally announced December 2014.
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Valley and spin polarization from graphene line defect scattering
Authors:
Daniel Gunlycke,
Carter T. White
Abstract:
Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line defect. The transmission probability is derived and expressed as a function of valley, spin, and angle of incidence of an electron at the Fermi level being scatt…
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Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line defect. The transmission probability is derived and expressed as a function of valley, spin, and angle of incidence of an electron at the Fermi level being scattered. It is shown that the previously predicted valley polarization in a beam of transmitted electrons is not significantly influenced by the presence of the magnetic moments. These moments, however, do introduce some spin polarization, in addition to the valley polarization, albeit no more than about 20%.
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Submitted 17 May, 2012;
originally announced May 2012.
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Graphene valley filter using a line defect
Authors:
Daniel Gunlycke,
Carter T. White
Abstract:
With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered according to which valley they occupy without the need to introduce confinement. The proposed valley filter is based on scattering off a recently observed line…
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With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered according to which valley they occupy without the need to introduce confinement. The proposed valley filter is based on scattering off a recently observed line defect in graphene. Quantum transport calculations show that the line defect is semitransparent and that quasiparticles arriving at the line defect with a high angle of incidence are transmitted with a valley polarization near 100%.
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Submitted 22 March, 2011;
originally announced March 2011.
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Room-temperature ballistic transport in narrow graphene strips
Authors:
D. Gunlycke,
H. M. Lawler,
C. T. White
Abstract:
We investigate electron-phonon couplings, scattering rates, and mean free paths in zigzag-edge graphene strips with widths of the order of 10 nm. Our calculations for these graphene nanostrips show both the expected similarity with single-wall carbon nanotubes (SWNTs) and the suppression of the electron-phonon scattering due to a Dirichlet boundary condition that prohibits one major backscatteri…
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We investigate electron-phonon couplings, scattering rates, and mean free paths in zigzag-edge graphene strips with widths of the order of 10 nm. Our calculations for these graphene nanostrips show both the expected similarity with single-wall carbon nanotubes (SWNTs) and the suppression of the electron-phonon scattering due to a Dirichlet boundary condition that prohibits one major backscattering channel present in SWNTs. Low-energy acoustic phonon scattering is exponentially small at room temperature due to the large phonon wave vector required for backscattering. We find within our model that the electron-phonon mean free path is proportional to the width of the nanostrip and is approximately 70 $μ$m for an 11-nm-wide nanostrip.
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Submitted 21 February, 2007; v1 submitted 27 June, 2006;
originally announced June 2006.
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Shear Stresses in Shock-Compressed Covalent Solids
Authors:
I. I. Oleynik,
S. V. Zybin,
M. L. Elert,
C. T. White
Abstract:
Shear stresses are the driving forces for the creation of both point and extended defects in crystals subjected to high pressures and temperatures. Recently, we observed anomalous elastic materials response in shock-compressed silicon and diamond in the course of our MD simulations and were able to relate this phenomenon to non-monotonic dependence of shear stress on uniaxial compression of the…
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Shear stresses are the driving forces for the creation of both point and extended defects in crystals subjected to high pressures and temperatures. Recently, we observed anomalous elastic materials response in shock-compressed silicon and diamond in the course of our MD simulations and were able to relate this phenomenon to non-monotonic dependence of shear stress on uniaxial compression of the material. Here we report results of combined density functional theory (DFT) and classical interatomic potentials studies of shear stresses in shock compressed covalent solids such as diamond and silicon for three low-index crystallographic directions, <100>, <110>, <111>. We observed a non-monotonic dependence of DFT shear stresses for all three crystallographic directions which indicates that anomalous elastic response of shock compressed material is a real phenomenon and not an artifact of interatomic potentials used in MD simulations.
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Submitted 1 November, 2005;
originally announced November 2005.
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Nanoscale Molecular Dynamics Simulaton of Shock Compression of Silicon
Authors:
I. I. Oleynik,
S. V. Zybin,
M. L. Elert,
C. T. White
Abstract:
We report results of molecular dynamics simulation of shock wave propagation in silicon in [100], [110], and [111] directions obtained using a classical environment-dependent interatomic potential (EDIP). Several regimes of materials response are classified as a function of shock wave intensity using the calculated shock Hugoniot. Shock wave structure in [100] and [111] directions exhibit usual…
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We report results of molecular dynamics simulation of shock wave propagation in silicon in [100], [110], and [111] directions obtained using a classical environment-dependent interatomic potential (EDIP). Several regimes of materials response are classified as a function of shock wave intensity using the calculated shock Hugoniot. Shock wave structure in [100] and [111] directions exhibit usual evolution as a function of piston velocity. At piston velocities km/s the shock wave consists of a fast elastic precursor followed by a slower plastic front. At larger piston velocities the single overdriven plastic wave propagates through the crystal causing amorphitization of Si. However, the [110] shock wave exhibits an anomalous materials response at intermediate piston velocities around km/s which is characterized by the absence of plastic deformations.
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Submitted 1 November, 2005;
originally announced November 2005.
