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Magnetic and structural properties of the double-perovskite Ca_2FeReO_6
Authors:
W. Westerburg,
O. Lang,
C. Felser,
W. Tremel,
M. Waldeck,
F. Renz,
P. Guetlich,
C. Ritter,
G. Jakob
Abstract:
We suceeded in the preparation of polycrystalline Ca_2FeReO_6 which has a Curie temperature of 540 K, the highest value of all magnetic perovskites investigated up to now. This material has been characterised by X-ray and neutron powder diffraction. We found at 548 K a monoclinic unit cell (space group P2_1/n) with a=5.4366(5) A, b=5.5393(5) A, c=7.7344(5) A, and beta=90.044(4) deg. For low temp…
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We suceeded in the preparation of polycrystalline Ca_2FeReO_6 which has a Curie temperature of 540 K, the highest value of all magnetic perovskites investigated up to now. This material has been characterised by X-ray and neutron powder diffraction. We found at 548 K a monoclinic unit cell (space group P2_1/n) with a=5.4366(5) A, b=5.5393(5) A, c=7.7344(5) A, and beta=90.044(4) deg. For low temperatures a phase separation in two monoclinic phases with identical cell volume is observed in neutron scattering. The two phases possess different magnetic structure and coercivity. 57-Fe-Moessbauer spectroscopy measurements show the presence of four different Fe(3+) positions indicating two different phases at room temperature, indistinguishable in the diffraction experiments. The conductivity is thermally activated for all temperatures and no significant magnetoresistivity is observed.
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Submitted 17 April, 2000;
originally announced April 2000.
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Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films
Authors:
W. Westerburg,
D. Reisinger,
G. Jakob
Abstract:
By pulsed-laser deposition epitaxial thin films of Sr_2FeMoO_6 have been pre- pared on (100) SrTiO_3 substrates. Already for a deposition temperature of 320 C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the Fe,Mo sublattice has a rock-salt (random) structure. The metallic samples have a…
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By pulsed-laser deposition epitaxial thin films of Sr_2FeMoO_6 have been pre- pared on (100) SrTiO_3 substrates. Already for a deposition temperature of 320 C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the Fe,Mo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4 mu_B per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found an ordinary Hall coefficient of -6.01x10^{-10} m^3/As at 300 K, corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair. In the semiconducting films the magnetic moment is reduced to 1 mu_B/f.u. due to disorder in the Fe,Mo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which vanishes at low temperatures for the metallic films only.
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Submitted 27 January, 2000;
originally announced January 2000.
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Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films
Authors:
W. Westerburg,
F. Martin,
G. Jakob
Abstract:
We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have…
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We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10^{-10} m^3/As, corresponding to a nominal charge carrier density of four electrons per formula unit. At low temperature only a small negative magnetoresistance is observed which vanishes at higher temperatures. The temperature coefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable range hopping like transport occurs.
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Submitted 29 October, 1999; v1 submitted 25 August, 1999;
originally announced August 1999.
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Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films
Authors:
W. Westerburg,
F. Martin,
G. Jakob,
P. J. M. van Bentum,
J. A. A. J. Perenboom
Abstract:
We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At low temperatures we find a charge carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range…
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We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At low temperatures we find a charge carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature T_C a dramatic drop in the number of current carriers $n$ down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated magnetic state will lead a more pronounced charge carrier density collapse.
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Submitted 22 July, 1999;
originally announced July 1999.
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Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)
Authors:
G. Jakob,
F. Martin,
S. Friedrich,
W. Westerburg,
M. Maier
Abstract:
By laser ablation we prepared thin films of the colossal magnetoresistive compound La_(1-x)Ca_xMnO_3 with doping levels 0.1<x<0.9 on MgO substrates. X-ray diffraction revealed epitaxial growth and a systematic decrease of the lattice constants with doping. The variation of the transport and magnetic properties in this doping series was investigated by SQUID magnetization and electrical transport…
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By laser ablation we prepared thin films of the colossal magnetoresistive compound La_(1-x)Ca_xMnO_3 with doping levels 0.1<x<0.9 on MgO substrates. X-ray diffraction revealed epitaxial growth and a systematic decrease of the lattice constants with doping. The variation of the transport and magnetic properties in this doping series was investigated by SQUID magnetization and electrical transport measurements. For the nonmetallic samples resistances up to 10^13 Ohm have been measured with an electrometer setup. While the transport data indicate polaronic transport for the metallic samples above the Curie temperature the low doped ferromagnetic insulating samples show a variable range hopping like transport at low temperature.
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Submitted 2 July, 1999;
originally announced July 1999.
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Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films
Authors:
W. Westerburg,
F. Martin,
S. Friedrich,
M. Maier,
G. Jakob
Abstract:
We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low temperatures hysteretic changes in resistivity up to 70% due to switching of magnetic domains at the coercitive field are observed. The strongly non-ohmic behavior of th…
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We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low temperatures hysteretic changes in resistivity up to 70% due to switching of magnetic domains at the coercitive field are observed. The strongly non-ohmic behavior of the current-voltage leads to a complete suppression of the MR effect at high bias currents with the identical current dependence at low and high magnetic fields. We discuss the data in view of tunneling and mesoscale magnetic transport models and propose an explicit dependence of the spin polarization on the applied current in the grain boundary region.
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Submitted 1 June, 1999;
originally announced June 1999.
