-
Layered-to-Spinel Phase Transformation in Li$_{0.5}$NiO$_2$ from First Principles
Authors:
Cem Komurcuoglu,
Alan C. West,
Alexander Urban
Abstract:
The phase transition layered Li$_{0.5}$NiO$_2$ to spinel Li(NiO$_2$)$_2$ is a potential degradation pathway in LiNiO$_2$-based lithium-ion battery cathodes. We investigated the mechanism of this phase transformation from first principles. Consistent with experimental observations reported in the literature, our results indicate a high energy barrier for the transformation due to high defect-format…
▽ More
The phase transition layered Li$_{0.5}$NiO$_2$ to spinel Li(NiO$_2$)$_2$ is a potential degradation pathway in LiNiO$_2$-based lithium-ion battery cathodes. We investigated the mechanism of this phase transformation from first principles. Consistent with experimental observations reported in the literature, our results indicate a high energy barrier for the transformation due to high defect-formation energies, a complex charge-transfer mechanism, and electronic frustration. Our results suggest that partially inverse spinel phases are unlikely to form for Li$_{0.5}$NiO$_2$, a qualitative difference from the chemically similar Li$_{0.5}$MnO$_2$, in which the transformation occurs at room temperature. We show that Ni and Li atoms migrate concertedly towards their respective spinel sites for the layered-to-spinel transformation to occur. We investigated the charge ordering in layered phases along the LiNiO$_2$-NiO$_2$ composition line, finding a pronounced impact of the symmetry and space group on the layered-to-spinel transition in Li$_{0.5}$NiO$_2$. Finally, we evaluated the relative stability of different spinel space groups, finding that previously reported experimental observations are consistent with a temperature-averaged structure rather than the 0 Kelvin ground-state structure of Li(NiO$_2$)$_2$ spinel.
△ Less
Submitted 4 March, 2024;
originally announced March 2024.
-
Understanding how off-stoichiometry promotes cation mixing in LiNiO$_2$
Authors:
Cem Komurcuoglu,
Yunhao Xiao,
Xinhao Li,
Joaquin Rodriguez-Lopez,
Zheng Li,
Alan C. West,
Alexander Urban
Abstract:
Although LiNiO$_2$ is chemically similar to LiCoO$_2$ and offers a nearly identical theoretical capacity, LiNiO$_2$ and related Co-free Ni-rich cathode materials suffer from degradation during electrochemical cycling that has prevented practical use in Li-ion batteries. The observed capacity decay of LiNiO$_2$ has been attributed to the formation of structural defects via Li/Ni cation mixing that…
▽ More
Although LiNiO$_2$ is chemically similar to LiCoO$_2$ and offers a nearly identical theoretical capacity, LiNiO$_2$ and related Co-free Ni-rich cathode materials suffer from degradation during electrochemical cycling that has prevented practical use in Li-ion batteries. The observed capacity decay of LiNiO$_2$ has been attributed to the formation of structural defects via Li/Ni cation mixing that reduces cyclability and leads to poor capacity retention. Herein, we investigate the kinetics and thermodynamics of Li/Ni mixing in ideal LiNiO$_2$ and off-stoichiometric Li$_{1-z}$Ni$_{1+z}$O$_2$. We find that ideal LiNiO$_2$ is stable against cation mixing with similar characteristics as LiCoO$_2$. Li/Ni mixing is promoted by extra Ni in the Li layers that cannot be avoided in synthesis. Our study elucidates the crucial role of extra Ni atoms on Li sites in the cation mixing mechanism, an insight that can inform the development of Co-free cathode materials.
△ Less
Submitted 11 January, 2024;
originally announced January 2024.
-
Epitaxial metals for interconnects beyond Cu
Authors:
Katayun Barmak,
Sameer Ezzat,
Ryan Gusle,
Atharv Jog,
Sit Kerdsongpanya,
Asim Khanya,
Erik Milosevic,
William Richardson,
Kadir Sentosun,
Amirali Zangiabadi,
Daniel Gall,
William E. Kaden,
Eduardo R. Mucciolo,
Patrick K. Schelling,
Alan C. West,
Kevin R. Coffey
Abstract:
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron…
▽ More
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron microscopy evidences threading and misfit dislocations, stacking faults and deformation twins. Exposure of Co films to ambient air, and the deposition of oxide layers of SiO2, MgO, Al2O3 and Cr2O3 on Ru degrade the surface specularity of the metallic layer. However, for the Ru films, annealing in a reducing ambient restores the surface specularity. Epitaxial electrochemical deposition of Co on epitaxially-deposited Ru layers is used as an example to demonstrate the feasibility of generating epitaxial interconnects for back-end of line structures. An electron transport model based on a tight-binding approach is described, with Ru interconnects used an example. The model allows conductivity to be computed for structures comprising large ensembles of atoms (10^5-10^6), scales linearly with system size and can also incorporate defects.
△ Less
Submitted 2 April, 2020;
originally announced April 2020.
-
Gate-based single-shot readout of spins in silicon
Authors:
A. West,
B. Hensen,
A. Jouan,
T. Tanttu,
C. H. Yang,
A. Rossi,
M. F. Gonzalez-Zalba,
F. E. Hudson,
A. Morello,
D. J. Reilly,
A. S. Dzurak
Abstract:
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f…
▽ More
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.
△ Less
Submitted 1 October, 2018; v1 submitted 6 September, 2018;
originally announced September 2018.
-
Electron mean free path from angle-dependent photoelectron spectroscopy of aerosol particles
Authors:
Maximilian Goldmann,
Javier Miguel-Sánchez,
Adam H. C. West,
Bruce L. Yoder,
Ruth Signorell
Abstract:
We propose angle-resolved photoelectron spectroscopy of aerosol particles as an alternative way to determine the electron mean free path of low energy electrons in solid and liquid materials. The mean free path is obtained from fits of simulated photoemission images to experimental ones over a broad range of different aerosol particle sizes. The principal advantage of the aerosol approach is twofo…
▽ More
We propose angle-resolved photoelectron spectroscopy of aerosol particles as an alternative way to determine the electron mean free path of low energy electrons in solid and liquid materials. The mean free path is obtained from fits of simulated photoemission images to experimental ones over a broad range of different aerosol particle sizes. The principal advantage of the aerosol approach is twofold. Firstly, aerosol photoemission studies can be performed for many different materials, including liquids. Secondly, the size-dependent anisotropy of the photoelectrons can be exploited in addition to size-dependent changes in their kinetic energy. These finite size effects depend in different ways on the mean free path and thus provide more information on the mean free path than corresponding liquid jet, thin film, or bulk data. The present contribution is a proof of principle employing a simple model for the photoemission of electrons and preliminary experimental data for potassium chloride aerosol particles.
△ Less
Submitted 19 February, 2015;
originally announced February 2015.
-
Manipulating ultracold atoms with a reconfigurable nanomagnetic system of domain walls
Authors:
Adam D. West,
Kevin J. Weatherill,
Thomas J. Hayward,
Paul W. Fry,
Thomas Schrefl,
Mike R. J. Gibbs,
Charles S. Adams,
Dan A. Allwood,
Ifan G. Hughes
Abstract:
The divide between the realms of atomic-scale quantum particles and lithographically-defined nanostructures is rapidly being bridged. Hybrid quantum systems comprising ultracold gas-phase atoms and substrate-bound devices already offer exciting prospects for quantum sensors, quantum information and quantum control. Ideally, such devices should be scalable, versatile and support quantum interaction…
▽ More
The divide between the realms of atomic-scale quantum particles and lithographically-defined nanostructures is rapidly being bridged. Hybrid quantum systems comprising ultracold gas-phase atoms and substrate-bound devices already offer exciting prospects for quantum sensors, quantum information and quantum control. Ideally, such devices should be scalable, versatile and support quantum interactions with long coherence times. Fulfilling these criteria is extremely challenging as it demands a stable and tractable interface between two disparate regimes. Here we demonstrate an architecture for atomic control based on domain walls (DWs) in planar magnetic nanowires that provides a tunable atomic interaction, manifested experimentally as the reflection of ultracold atoms from a nanowire array. We exploit the magnetic reconfigurability of the nanowires to quickly and remotely tune the interaction with high reliability. This proof-of-principle study shows the practicability of more elaborate atom chips based on magnetic nanowires being used to perform atom optics on the nanometre scale.
△ Less
Submitted 5 December, 2011; v1 submitted 2 December, 2011;
originally announced December 2011.
-
Nanomagnetic engineering of the properties of domain wall atom traps
Authors:
Thomas J. Hayward,
Adam D. West,
Kevin J. Weatherill,
Thomas Schrefl,
Ifan G. Hughes,
Dan A. Allwood
Abstract:
We have used the results of micromagnetic simulations to investigate the effects of nanowire geometry and domain wall magnetization structure on the characteristic parameters of magnetic atom traps formed by domain walls in planar ferromagnetic nanowires. It is found that when traps are formed in the near-field of a domain wall both nanowire geometry and wall structure have a substantial effect on…
▽ More
We have used the results of micromagnetic simulations to investigate the effects of nanowire geometry and domain wall magnetization structure on the characteristic parameters of magnetic atom traps formed by domain walls in planar ferromagnetic nanowires. It is found that when traps are formed in the near-field of a domain wall both nanowire geometry and wall structure have a substantial effect on trap frequency and adiabaticity. We also show that in certain regimes a trap's depth depends only on the amplitude of an externally applied rotating magnetic field, thus allowing it to be tuned independently of the trap's other critical parameters.
△ Less
Submitted 16 September, 2011;
originally announced September 2011.
-
A simple model for calculating magnetic nanowire domain wall fringing fields
Authors:
Adam West,
Thomas Hayward,
Kevin Weatherill,
Thomas Schrefl,
Dan Allwood,
Ifan Hughes
Abstract:
We present a new approach to calculating magnetic fringing fields from head-to-head type domain walls in planar magnetic nanowires. In contrast to calculations based on micromagnetically simulated structures the descriptions of the fields are for the most part analytic and thus significantly less time and resource intensive. The models presented begin with an intuitive picture of domain walls, whi…
▽ More
We present a new approach to calculating magnetic fringing fields from head-to-head type domain walls in planar magnetic nanowires. In contrast to calculations based on micromagnetically simulated structures the descriptions of the fields are for the most part analytic and thus significantly less time and resource intensive. The models presented begin with an intuitive picture of domain walls, which is built upon in a phenomenological manner. Comparisons with fields calculated using micromagnetic methods show good quantitative agreement.
△ Less
Submitted 16 September, 2011; v1 submitted 12 April, 2011;
originally announced April 2011.
-
Design and Characterization of a Field-Switchable Nanomagnetic Atom Mirror
Authors:
T. J. Hayward,
A. D. West,
K. J. Weatherill,
P. J. Curran,
P. W. Fry,
P. M. Fundi,
M. R. J. Gibbs,
T. Schrefl,
C. S. Adams,
I. G. Hughes,
S. J. Bending,
D. A. Allwood
Abstract:
We present a design for a switchable nanomagnetic atom mirror formed by an array of 180° domain walls confined within Ni80Fe20 planar nanowires. A simple analytical model is developed which allows the magnetic field produced by the domain wall array to be calculated. This model is then used to optimize the geometry of the nanowires so as to maximize the reflectivity of the atom mirror. We then des…
▽ More
We present a design for a switchable nanomagnetic atom mirror formed by an array of 180° domain walls confined within Ni80Fe20 planar nanowires. A simple analytical model is developed which allows the magnetic field produced by the domain wall array to be calculated. This model is then used to optimize the geometry of the nanowires so as to maximize the reflectivity of the atom mirror. We then describe the fabrication of a nanowire array and characterize its magnetic behavior using magneto-optic Kerr effect magnetometry, scanning Hall probe microscopy and micromagnetic simulations, demonstrating how the mobility of the domain walls allow the atom mirror to be switched "on" and "off" in a manner which would be impossible for conventional designs. Finally, we model the reflection of 87Rb atoms from the atom mirror's surface, showing that our design is well suited for investigating interactions between domain walls and cold atoms.
△ Less
Submitted 10 August, 2010;
originally announced August 2010.
-
Dielectric spectra of a new relaxor ferroelectric system Ba2LnTi2Nb3O15 (Ln=La, Nd)
Authors:
S. Kamba,
S. Veljko,
M. Kempa,
M. Savinov,
V. Bovtun,
P. Vanek,
J. Petzelt,
M. C. Stennett,
I. M. Reaney,
A. R. West
Abstract:
New relaxor ferroelectric system has been synthesized. BLTN exhibits a smeared maximum of permittivity, characteristic of classic relaxor behaviour, with a peak shift from 185 K at 100 Hz to 300 K at 1 GHz. BNTN undergoes a first order ferroelectric phase transition at 389 K and BLNTN exhibits both a ferroelectric phase transition at 274 K and relaxor behaviour at higher temperatures.
New relaxor ferroelectric system has been synthesized. BLTN exhibits a smeared maximum of permittivity, characteristic of classic relaxor behaviour, with a peak shift from 185 K at 100 Hz to 300 K at 1 GHz. BNTN undergoes a first order ferroelectric phase transition at 389 K and BLNTN exhibits both a ferroelectric phase transition at 274 K and relaxor behaviour at higher temperatures.
△ Less
Submitted 16 June, 2004;
originally announced June 2004.
