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Ultrastrong, Ultraflexible, and Ultratransparent Polyethylene Cellular Nanofilms
Authors:
Ping Gao,
Qiao Gu,
Jin Li,
Runlai Li,
Qinghua Zhang,
Lu-tao Weng,
Tianshou Zhao,
T. X. Yu,
Minhua Shao,
Khalil Amine
Abstract:
Light weight and mechanically robust cellular polymer nanofilms provide materials solutions to many cutting-edge technologies, such as high-flux membrane filtration, ultrathin flexible energy storage, and skin-conformable devices. However, it remains challenging to fabricate hand manipulatable cellular polymer nanofilms for use as self-standing structural materials. Herein, we used a sequential pl…
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Light weight and mechanically robust cellular polymer nanofilms provide materials solutions to many cutting-edge technologies, such as high-flux membrane filtration, ultrathin flexible energy storage, and skin-conformable devices. However, it remains challenging to fabricate hand manipulatable cellular polymer nanofilms for use as self-standing structural materials. Herein, we used a sequential planar extension approach to transform low-entanglement ultrahigh molecular weight polyethylene (UHMWPE) gel films dispersed in porogenic polyethylene oligomers into cellular nanofilms consisting of stretch-dominated triangular cells of molecularly anisotropic cell edges. The microstructure afforded the cellular nanofilm, which had a thickness down to 20 nm, with a unique combination of ultratransparency (>98.5%), ultrahigh in-plane tensile strength (1071 MPa.cm^3.g^(-1)), and ultrahigh flexibility: a 43 nm thick film can deflect reversibly up to 8.0 mm in depth (185,000 times) under a spherical indentation load. As an application, we fabricated the nanofilm into a freestanding ultratransparent respiratory face covering. The new polyethylene cellular nanofilms are expected to represent a new class of platform membranes for advancing fundamental and technological development.
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Submitted 23 November, 2020;
originally announced November 2020.
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Selective Defect Formation in Hexagonal Boron Nitride
Authors:
Irfan H. Abidi,
Noah Mendelson,
Toan Trong Tran,
Abhishek Tyagi,
Minghao Zhuang,
Lu-Tao Weng,
Barbaros Ozyilmaz,
Igor Aharonovich,
Milos Toth,
Zhengtang Luo
Abstract:
Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabr…
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Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.
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Submitted 24 February, 2019; v1 submitted 21 February, 2019;
originally announced February 2019.
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Laser writing of individual atomic defects in a crystal with near-unity yield
Authors:
Yu-Chen Chen,
Benjamin Griffiths,
Laiyi Weng,
Shannon Nicley,
Shazeaa N. Ishmael,
Yashna Lekhai,
Sam Johnson,
Colin J. Stephen,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin de…
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Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin degrees of freedom with potential for applications in advanced sensing and computing. Here we demonstrate a method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy using laser processing with online fluorescence feedback. This method provides a new tool for the fabrication of engineered materials and devices for quantum technologies and offers insight into the diffusion dynamics of point defects in solids.
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Submitted 11 July, 2018;
originally announced July 2018.
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Three-dimensional solid-state qubit arrays with long-lived spin coherence
Authors:
C. J. Stephen,
B. L. Green,
Y. N. D. Lekhai,
L. Weng,
P. Hill,
S. Johnson,
A. C. Frangeskou,
P. L. Diggle,
M. J. Strain,
E. Gu,
M. E. Newton,
J. M. Smith,
P. S. Salter,
G. W. Morley
Abstract:
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This woul…
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Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide.
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Submitted 10 July, 2018;
originally announced July 2018.
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Microcavity enhanced single photon emission from two-dimensional WSe2
Authors:
L. C. Flatten,
L. Weng,
A. Branny,
S. Johnson,
P. R. Dolan,
A. A. P. Trichet,
B. D. Gerardot,
J. M. Smith
Abstract:
Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here we report the coupling of a bound exciton in WSe$_2$ to…
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Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here we report the coupling of a bound exciton in WSe$_2$ to open microcavities. We use a range of radii of curvature in the plano-concave cavity geometry with mode volumes in the $λ^3$ regime, giving Purcell factors of up to 8 while increasing the photon flux five-fold. Additionally we determine the quantum efficiency of the single photon emitter to be $η= 0.46 \pm 0.03$. Our findings pave the way to cavity-enhanced monolayer based single photon sources for a wide range of applications in nanophotonics and quantum information technologies.
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Submitted 8 July, 2018;
originally announced July 2018.
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Band bending at interfaces between topological insulator Bi2Se3 and transition metals
Authors:
Weiguang Ye,
A. B. Pakhomov,
Shuigang Xu,
Huanhuan Lu,
Zefei Wu,
Yu Han,
Tianyi Han,
Yingying Wu,
Gen Long,
Jiangxiazi Lin,
Gu Xu,
Yuan Cai,
Lu-Tao Weng,
Ning Wang
Abstract:
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topol…
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Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications
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Submitted 11 November, 2015;
originally announced November 2015.
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AFM local oxidation nanolithography of graphene
Authors:
Lishan Weng,
Liyuan Zhang,
Yong P. Chen,
Leonid P. Rokhinson
Abstract:
We demonstrate the local oxidation nanopatterning of graphene films by an atomic force microscope. The technique provides a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nm precision. We demonstrate fabrication of a 25-nm-wide nanoribbon and sub-micron size nanoring from a graphene flake. We also found that we can write either trenches or bumps on th…
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We demonstrate the local oxidation nanopatterning of graphene films by an atomic force microscope. The technique provides a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nm precision. We demonstrate fabrication of a 25-nm-wide nanoribbon and sub-micron size nanoring from a graphene flake. We also found that we can write either trenches or bumps on the graphene surface depending on the lithography conditions. We attribute the bumps to partial oxidation of the surface and incorporation of oxygen into the graphene lattice.
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Submitted 18 July, 2008; v1 submitted 18 July, 2008;
originally announced July 2008.
