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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
Authors:
M. J. Curry,
M. Rudolph,
T. D. England,
A. M. Mounce,
R. M. Jock,
C. Bureau-Oxton,
P. Harvey-Collard,
P. A. Sharma,
J. M. Anderson,
D. M. Campbell,
J. R. Wendt,
D. R. Ward,
S. M. Carr,
M. P. Lilly,
M. S. Carroll
Abstract:
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o…
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High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.
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Submitted 14 January, 2019;
originally announced January 2019.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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All-electrical universal control of a double quantum dot qubit in silicon MOS
Authors:
Patrick Harvey-Collard,
Ryan M. Jock,
N. Tobias Jacobson,
Andrew D. Baczewski,
Andrew M. Mounce,
Matthew J. Curry,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea…
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Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.
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Submitted 6 February, 2018;
originally announced February 2018.
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Ion Implantation for Deterministic Single Atom Devices
Authors:
J. L. Pacheco,
M. Singh,
D. L. Perry,
J. R. Wendt,
G. Ten Eyck,
R. P. Manginell,
T. Pluym,
D. R. Luhman,
M. P. Lilly,
M. S. Carroll,
E. Bielejec
Abstract:
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device…
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We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Submitted 2 November, 2017;
originally announced November 2017.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Quantum dots with split enhancement gate tunnel barrier control
Authors:
S. Rochette,
M. Rudolph,
A. -M. Roy,
M. Curry,
G. Ten Eyck,
R. Manginell,
J. Wendt,
T. Pluym,
S. M. Carr,
D. Ward,
M. P. Lilly,
M. S. Carroll,
M. Pioro-Ladrière
Abstract:
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai…
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We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.
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Submitted 5 March, 2019; v1 submitted 12 July, 2017;
originally announced July 2017.
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Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
Authors:
M. Rudolph,
P. Harvey-Collard,
R. Jock,
N. T. Jacobson,
J. Wendt,
T. Pluym,
J. Dominguez,
G. Ten-Eyck,
R. Manginell,
M. P. Lilly,
M. S. Carroll
Abstract:
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact…
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Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
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Submitted 16 May, 2017;
originally announced May 2017.
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Spectroscopy of multi-electrode tunnel barriers
Authors:
A. Shirkhorshidian,
John King Gamble,
L. Maurer,
S. M. Carr,
J. Dominguez,
G. A. Ten Eyck,
J. R. Wendt,
E. Nielsen,
N. T. Jacobson,
M. P. Lilly,
M. S. Carroll
Abstract:
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-elec…
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Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-electrode tunnel barriers, suitable for design-rules-based engineering of tunnel junctions in quantum devices. We perform transport spectroscopy at $T=4$ K, extracting effective barrier heights and widths for a wide range of biases, using an efficient Landauer-Büttiker tunneling model to perform the analysis. We find that the barrier height shows several regimes of voltage dependence, either linear or approximately exponential. The exponential dependence approximately correlates with the formation of an electron channel below an electrode. Effects on transport threshold, such as metal-insulator-transition and lateral confinement are non-negligible and included. We compare these results to semi-classical solutions of Poisson's equation and find them to agree qualitatively. Finally, we characterize the sensitivity of a tunnel barrier that is raised or lowered without an electrode being directly above the barrier region.
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Submitted 4 May, 2017; v1 submitted 2 May, 2017;
originally announced May 2017.
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High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
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Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
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Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer
Authors:
T. M. Lu,
J. K. Gamble,
R. P. Muller,
E. Nielsen,
D. Bethke,
G. A. Ten Eyck,
T. Pluym,
J. R. Wendt,
J. Dominguez,
M. P. Lilly,
M. S. Carroll,
M. C. Wanke
Abstract:
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heteros…
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Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $μ$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.
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Submitted 29 August, 2016;
originally announced August 2016.
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Silicon Quantum Dots with Counted Antimony Donor Implants
Authors:
M. Singh,
J. L. Pacheco,
D. Perry,
E. Garratt,
G. Ten Eyck,
N. C. Bishop,
J. R. Wendt,
R. P. Manginell,
J. Dominguez,
T. Pluym,
D. R. Luhman,
E. Bielejec,
M. P. Lilly,
M. S. Carroll
Abstract:
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In…
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Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
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Submitted 14 December, 2015;
originally announced December 2015.
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Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
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Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
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Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
Authors:
M. J. Curry,
T. D. England,
N. C. Bishop,
G. Ten-Eyck,
J. R. Wendt,
T. Pluym,
M. P. Lilly,
S. M. Carr,
M. S. Carroll
Abstract:
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signa…
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We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.
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Submitted 28 September, 2015;
originally announced September 2015.
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Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
Authors:
A. Shirkhorshidian,
N. C. Bishop,
J. Dominguez,
R. K. Grubbs,
J. R. Wendt,
M. P. Lilly,
M. S. Carroll
Abstract:
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a r…
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We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.
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Submitted 14 January, 2015;
originally announced January 2015.
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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
Authors:
E. P. Nordberg,
H. L. Stalford,
R. Young,
G. A. Ten Eyck,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t…
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Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.
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Submitted 18 September, 2009;
originally announced September 2009.
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Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
Authors:
E. P. Nordberg,
G. A. Ten Eyck,
H. L. Stalford,
R. P. Muller,
R. W. Young,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect…
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We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.
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Submitted 11 September, 2009; v1 submitted 19 June, 2009;
originally announced June 2009.
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Giant microwave photoresistance of two-dimensional electron gas
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
J. A. Simmons,
J. R. Wendt,
G. A. Vawter,
J. L. Reno
Abstract:
We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The…
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We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The photoresistance is apparently proportional to the square root of applied power, and disappears as the temperature is increased.
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Submitted 9 June, 2001;
originally announced June 2001.
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High Magnetic Field Microwave Conductivity of 2D Electrons in an Array of Antidots
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
J. A. Simmons,
J. R. Wendt,
G. A. Vawter,
J. L. Reno
Abstract:
We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re…
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We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re$σ_{xx}$ can exceed its dc-limit value by a factor of 5. This enhanced microwave conductivity is unobservable for temperature $T \gtrsim 0.5$ K, and grows more pronounced as $T$ is decreased. The effect may be due to excitations supported by the antidot edges, but different from the well-known edge magnetoplasmons.
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Submitted 6 March, 2001;
originally announced March 2001.
