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Electric field direction dependence of the electrocaloric effect in BaTiO3
Authors:
Lan-Tien Hsu,
Frank Wendler,
Anna Grünebohm
Abstract:
Single-crystalline ferroelectric (FE) perovskites show a large electrocaloric effect at electric field-induced phase transitions, promising for solid-state cooling technologies. However, paraelectric-FE transition temperatures are often too high for practical applications, and lower transitions are underrepresented in literature. Particularly, the role of thermal hysteresis and electric field dire…
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Single-crystalline ferroelectric (FE) perovskites show a large electrocaloric effect at electric field-induced phase transitions, promising for solid-state cooling technologies. However, paraelectric-FE transition temperatures are often too high for practical applications, and lower transitions are underrepresented in literature. Particularly, the role of thermal hysteresis and electric field direction on the caloric response is critical, especially for polycrystalline materials, but not yet fully understood. Using ab initio-based coarse-grained molecular dynamics simulations, we show how transition temperatures depend on the direction of the applied field. Also, we reveal that the choice of electric field direction can reduce thermal hysteresis and can adjust the temperature ranges where large and reversible caloric responses occur. Furthermore, we propose a phenomenological descriptor for the qualitative changes in transition temperature with field direction. This descriptor is valid for both BaTiO3 and PbTiO3, even though both materials show different microscopic electric field coupling. Finally, we identify favorable temperature and texturing conditions for large and reversible caloric responses in polycrystals.
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Submitted 2 October, 2024; v1 submitted 1 February, 2024;
originally announced February 2024.
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Microscopic origin of the bolometric effect in graphene
Authors:
Roland Jago,
Ermin Malic,
Florian Wendler
Abstract:
While the thermoelectric and photoconduction effects are crucial in pristine and low-doped graphene, the bolometric effect is known to dominate the photoresponse in biased graphene. Here, we present a detailed microscopic investigation of the photoresponse due to the bolometric effect in graphene. Based on the semiconductor Bloch equations, we investigate the time- and momentumresolved carrier dyn…
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While the thermoelectric and photoconduction effects are crucial in pristine and low-doped graphene, the bolometric effect is known to dominate the photoresponse in biased graphene. Here, we present a detailed microscopic investigation of the photoresponse due to the bolometric effect in graphene. Based on the semiconductor Bloch equations, we investigate the time- and momentumresolved carrier dynamics in graphene in the presence of a constant electric field under optical excitation. The magnitude of the bolometric effect is determined by the optically induced increase of temperature times the conductivity change. Investigating both factors independently, we reveal that the importance of the bolometric effect in the high-doping regime can be mostly ascribed to the latter showing a parabolic dependence on the doping.
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Submitted 21 January, 2019;
originally announced January 2019.
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Carrier dynamics in graphene: ultrafast many-particle phenomena
Authors:
Ermin Malic,
Torben Winzer,
Florian Wendler,
Samuel Brem,
Roland Jago,
Andreas Knorr,
Martin Mittendorff,
Jacob C. König-Otto,
Tobias Plötzing,
Daniel Neumaier,
Harald Schneider,
Manfred Helm,
Stephan Winnerl
Abstract:
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle p…
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Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion.
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Submitted 15 October, 2018;
originally announced October 2018.
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Symmetry-breaking supercollisions in Landau-quantized graphene
Authors:
Florian Wendler,
Martin Mittendorff,
Jacob C. König-Otto,
Samuel Brem,
Claire Berger,
Walter A. de Heer,
Roman Böttger,
Harald Schneider,
Manfred Helm,
Stephan Winnerl,
Ermin Malic
Abstract:
Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastica…
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Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude.
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Submitted 25 January, 2018;
originally announced January 2018.
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Dark excitons in transition metal dichalcogenides
Authors:
Ermin Malic,
Malte Selig,
Maja Feierabend,
Samuel Brem,
Dominik Christiansen,
Florian Wendler,
Andreas Knorr,
Gunnar Berghäuser
Abstract:
Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative posi…
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Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum- and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap, since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a non-direct gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.
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Submitted 4 September, 2017;
originally announced September 2017.
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Current enhancement due to field-induced dark carrier multiplication in graphene
Authors:
Roland Jago,
Florian Wendler,
Ermin Malic
Abstract:
We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement via a phenomenon we denote dark carrier multiplication. Based on a microscopic approach, we show that, if other scattering channels are absent, this prevents t…
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We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement via a phenomenon we denote dark carrier multiplication. Based on a microscopic approach, we show that, if other scattering channels are absent, this prevents the carrier distribution to reach a stationary value. Taking into account scattering with phonons a finite current is restored, however its value exceeds the stationary current without scattering.
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Submitted 19 May, 2017;
originally announced May 2017.
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Review on carrier multiplication in graphene
Authors:
Ermin Malic,
Torben Winzer,
Florian Wendler,
Andreas Knorr
Abstract:
The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a significant multiplication of optically excited carriers in graphene. This is an ultrafast many-particle phenomenon that is of great interest both for fundamen…
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The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a significant multiplication of optically excited carriers in graphene. This is an ultrafast many-particle phenomenon that is of great interest both for fundamental many-particle physics as well as technological applications. Here, we review the research on carrier multiplication in graphene and Landau-quantized graphene including theoretical modelling and experimental demonstration.
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Submitted 20 September, 2016;
originally announced September 2016.
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Proposal for a tunable graphene-based terahertz Landau-level laser
Authors:
Samuel Brem,
Florian Wendler,
Ermin Malic
Abstract:
In the presence of strong magnetic fields the electronic bandstructure of graphene drastically changes. The Dirac cone collapses into discrete non-equidistant Landau levels, which can be externally tuned by changing the magnetic field. In contrast to conventional materials, specific Landau levels are selectively addressable using circularly polarized light. Exploiting these unique properties, we p…
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In the presence of strong magnetic fields the electronic bandstructure of graphene drastically changes. The Dirac cone collapses into discrete non-equidistant Landau levels, which can be externally tuned by changing the magnetic field. In contrast to conventional materials, specific Landau levels are selectively addressable using circularly polarized light. Exploiting these unique properties, we propose the design of a tunable laser operating in the technologically promising terahertz spectral range. To uncover the many-particle physics behind the emission of light, we perform a fully quantum mechanical investigation of the non-equilibrium dynamics of electrons, phonons, and photons in optically pumped Landau-quantized graphene embedded into an optical cavity. The gained microscopic insights allow us to predict optimal experimental conditions to realize a technologically promising terahertz laser.
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Submitted 29 June, 2016;
originally announced June 2016.
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Carrier multiplication in graphene under Landau quantization
Authors:
Florian Wendler,
Andreas Knorr,
Ermin Malic
Abstract:
Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier multiplication has been theoretically predicted and recently experimentally observed. However, due to the absence of a bandgap and competing phonon-induced electron…
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Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier multiplication has been theoretically predicted and recently experimentally observed. However, due to the absence of a bandgap and competing phonon-induced electron-hole recombination, the extraction of charge carriers remains a substantial challenge. Here we present a new strategy to benefit from the gained charge carriers by introducing a Landau quantization that offers a tunable bandgap. Based on microscopic calculations within the framework of the density matrix formalism, we report a significant carrier multiplication in graphene under Landau quantization. Our calculations reveal a high tunability of the effect via externally accessible pump fluence, temperature, and the strength of the magnetic field.
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Submitted 24 October, 2014;
originally announced October 2014.
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Population inversion in Landau-quantized graphene
Authors:
Florian Wendler,
Ermin Malic
Abstract:
Landau level lasers have the advantage of tunability of the laser frequency by means of the external magnetic field. The crucial prerequisite of such a laser is a population inversion between optically coupled Landau levels. Efficient carrier-carrier and carrier-phonon scattering generally suppresses this effect in conventional materials. Based on microscopic calculations, we predict for the first…
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Landau level lasers have the advantage of tunability of the laser frequency by means of the external magnetic field. The crucial prerequisite of such a laser is a population inversion between optically coupled Landau levels. Efficient carrier-carrier and carrier-phonon scattering generally suppresses this effect in conventional materials. Based on microscopic calculations, we predict for the first time the occurrence of a long-lived population inversion in Landau-quantized graphene and reveal the underlying many-particle mechanisms. To guide the experimental demonstration, we present optimal conditions for the observation of a maximal population inversion in terms of experimentally accessible parameters, such as the strength of the magnetic field, pump fluence, temperature, and doping. We reveal that in addition to the tunability of the Landau-level laser frequency, also the polarization of the emitted light can be tuned via gate voltage controlling the doping of the sample.
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Submitted 8 October, 2014;
originally announced October 2014.
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Jahn-Teller stabilization of a "polar" metal oxide surface: Fe3O4(001)
Authors:
R. Pentcheva,
F. Wendler,
H. L. Meyerheim,
W. Moritz,
N. Jedrecy,
M. Scheffler
Abstract:
Using ab initio thermodynamics we compile a phase diagram for the surface of Fe3O4(001) as a function of temperature and oxygen pressures. A hitherto ignored polar termination with octahedral iron and oxygen forming a wave-like structure along the [110]-direction is identified as the lowest energy configuration over a broad range of oxygen gas-phase conditions. This novel geometry is confirmed i…
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Using ab initio thermodynamics we compile a phase diagram for the surface of Fe3O4(001) as a function of temperature and oxygen pressures. A hitherto ignored polar termination with octahedral iron and oxygen forming a wave-like structure along the [110]-direction is identified as the lowest energy configuration over a broad range of oxygen gas-phase conditions. This novel geometry is confirmed in a x-ray diffraction analysis. The stabilization of the Fe3O4(001)-surface goes together with dramatic changes in the electronic and magnetic properties, e.g., a halfmetal-to-metal transition.
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Submitted 17 January, 2005;
originally announced January 2005.
